Small high-quality Au/n type-GaAs Schottky barrier diodes （SBDs） with low reverse leakage current are produced using lithography. Their effective barrier heights （BHs） and ideality factors from current-voltage （...Small high-quality Au/n type-GaAs Schottky barrier diodes （SBDs） with low reverse leakage current are produced using lithography. Their effective barrier heights （BHs） and ideality factors from current-voltage （I-V） characteristics are measured by a Pico ampere meter and home-built I-V instrument. In spite of the identical preparation of the diodes there is a diode-to-diode variation in ideality factor and barrier height parameters. Measurement of topology of a surface of a thin metal film with atomic force microscope （AFM） shows that Au-n type-GaAS SD consists of a set of parallel-connected micro and nanocontacts diodes with sizes approximately in a range of 100-200 nm. Between barrier height and ideality factor there is an inversely proportional dependency. With the diameter of contact increasing from 5 μm up to 200 μm, the barrier height increases from 0.833 up to 0.933 eV and its ideality factor decreases from 1.11 down to 1.006. These dependencies show the reduction of the contribution of the peripheral current with the diameter of contact increasing. We find the effect of series resistance on barrier height and ideality factor.展开更多
目的分析整合式慢性病社区健康管理模式实施的促进和障碍因素,区分模式服务量高覆盖率组和低覆盖率组在实施性研究的整合性理论框架(consolidated framework for implementation research,CFIR)上的结构差异,为政府部门提供政策建议。...目的分析整合式慢性病社区健康管理模式实施的促进和障碍因素,区分模式服务量高覆盖率组和低覆盖率组在实施性研究的整合性理论框架(consolidated framework for implementation research,CFIR)上的结构差异,为政府部门提供政策建议。方法结合CFIR对22名专家进行半结构化访谈,采用定性结构评级法对13家社区卫生服务中心受访者评分,利用NVivo 12软件编码。结果高覆盖率组和低覆盖率组的相对优势、外部政策与激励、实施准备度、反思和评价、领导个人特质5个CFIR结构有差异。促进因素包括:测量数据更加精准,提高了高血压和糖尿病患者的异常检出率和控制率;模式实现了服务、技术、数据“三整合”,优化管理流程,提供管理抓手;基础性和个性化服务结合吸引患者到基层就诊;模式与我国政策背景,初级卫生保健工作和以患者为中心理念兼容;数字化工具的应用减轻医护人员工作负担;领导重视是基础,利益方间的通力合作是重要保障。障碍因素包括:宏观层面缺少卫生行政机构的支持性政策,组织架构和运行机制尚未建立,建设、投入主体以及具体工作规范和流程有待明确;缺乏监督管理机制和质量评估小组;模式推广目标模糊;缺乏规范化系统性的培训计划;为不同群体提供服务存在挑战,缺乏有效的社会面宣传;模式仍须提高需方获得感;社区布局限制了模式的服务提供。结论卫生行政部门应明确模式的建设、运行、投入主体,完善组织架构并明确各利益方的功能定位和职责分工,进一步制定工作规范和工作流程;建立信息反馈机制和质量控制小组并进行定期评估;制定清晰的目标;加大宣传教育,扩大宣传面;利用数字化工具形成良性医患互动机制。展开更多
Small high-quality Au/P-Si Schottky barrier diodes（SBDs） with an extremely low reverse leakage current using wet lithography were produced.Their effective barrier heights（BHs） and ideality factors from current-vol...Small high-quality Au/P-Si Schottky barrier diodes（SBDs） with an extremely low reverse leakage current using wet lithography were produced.Their effective barrier heights（BHs） and ideality factors from current-voltage （Ⅰ-Ⅴ） characteristics were measured by a conducting probe atomic force microscope（C-AFM）.In spite of the identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height parameters.By extrapolating the plots the built in potential of the Au /p-Si contact was obtained as V_（bi）=0.5425 V and the barrier height valueΦ_（b（c-V）） was calculated to beΦ_（B（C-V））=0.7145 V for Au/p-Si.It is found that for the diodes with diameters smaller than 100μm,the diode barrier height and ideality factor dependency to their diameters and correlation between the diode barrier height and its ideality factor are nonlinear,where similar to the earlier reported different metal semiconductor diodes in the literature,these parameters for the here manufactured diodes with diameters more than 100μm are also linear.Based on the very obvious sub-nanometer C-AFM produced pictures the scientific evidence behind this controversy is also explained.展开更多
文摘Small high-quality Au/n type-GaAs Schottky barrier diodes （SBDs） with low reverse leakage current are produced using lithography. Their effective barrier heights （BHs） and ideality factors from current-voltage （I-V） characteristics are measured by a Pico ampere meter and home-built I-V instrument. In spite of the identical preparation of the diodes there is a diode-to-diode variation in ideality factor and barrier height parameters. Measurement of topology of a surface of a thin metal film with atomic force microscope （AFM） shows that Au-n type-GaAS SD consists of a set of parallel-connected micro and nanocontacts diodes with sizes approximately in a range of 100-200 nm. Between barrier height and ideality factor there is an inversely proportional dependency. With the diameter of contact increasing from 5 μm up to 200 μm, the barrier height increases from 0.833 up to 0.933 eV and its ideality factor decreases from 1.11 down to 1.006. These dependencies show the reduction of the contribution of the peripheral current with the diameter of contact increasing. We find the effect of series resistance on barrier height and ideality factor.
文摘Small high-quality Au/P-Si Schottky barrier diodes（SBDs） with an extremely low reverse leakage current using wet lithography were produced.Their effective barrier heights（BHs） and ideality factors from current-voltage （Ⅰ-Ⅴ） characteristics were measured by a conducting probe atomic force microscope（C-AFM）.In spite of the identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height parameters.By extrapolating the plots the built in potential of the Au /p-Si contact was obtained as V_（bi）=0.5425 V and the barrier height valueΦ_（b（c-V）） was calculated to beΦ_（B（C-V））=0.7145 V for Au/p-Si.It is found that for the diodes with diameters smaller than 100μm,the diode barrier height and ideality factor dependency to their diameters and correlation between the diode barrier height and its ideality factor are nonlinear,where similar to the earlier reported different metal semiconductor diodes in the literature,these parameters for the here manufactured diodes with diameters more than 100μm are also linear.Based on the very obvious sub-nanometer C-AFM produced pictures the scientific evidence behind this controversy is also explained.
