Layered Surface Acoustic Wave (SAW) devices with an InO_x/SiN_u/36°YX LiTaO_3 structure were investigated for sensing low concentrations of hydrogen (H_2) and ozone (O_3) at different operating temperatures.The s...Layered Surface Acoustic Wave (SAW) devices with an InO_x/SiN_u/36°YX LiTaO_3 structure were investigated for sensing low concentrations of hydrogen (H_2) and ozone (O_3) at different operating temperatures.The sensor consists of a 1μm thick silicon nitride (SiN_y) intermediate layer deposited by electron beam evaporation on a 36°Y-cut X-propagating piezoelectric lithium tantalate (LiTaO_3) substrate and a 100 nm thin indium oxide (InO_x) sensing layer deposited by R.F.magnetron sputtering.The device fabrication is described and the performance of the sensor is analyzed in terms of response magnitude as a function of operating temperature.Large frequency shifts of 360 kHz for 600μg/g of H_2 and 92 kHz for 40 ng/g O_3 were recorded.In addition,the surface morphology of the deposited films were investigated by Atomic Force Microscopy (AFM) and the chemical composition by X-Ray Photoelectron Spectroscopy (XPS) to correlate gas-sensing behavior to structural characteristics of the thin film.展开更多
In the present paper,the electron beam irradiation was used to improve gas sensing properties of ZnGa_2O_4 gas sensors.The effects of electron beam irradiation on the performance of ZnGa_2O_4 gas sensors were reported...In the present paper,the electron beam irradiation was used to improve gas sensing properties of ZnGa_2O_4 gas sensors.The effects of electron beam irradiation on the performance of ZnGa_2O_4 gas sensors were reported.Results show that the sensitivity of ZnGa_2O_4 gas sensors to various gases increased after electron beam irradiation,and the optimal working temperature decreased.The effect of irradiation dose and the reaction mechanism were discussed.展开更多
Based on Hartmann-Shack sensor technique, an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2, and comparison was made between the film stresses prepared respective...Based on Hartmann-Shack sensor technique, an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2, and comparison was made between the film stresses prepared respectively by the conventional process and the ion-beam assisted deposition. The effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 was investigated in details, and the stress control methodologies using on-line adjustment and film doping were put forward. The results show that the film stress value of TiO2 prepared by ion-beam assisted deposition is 40 MPa lower than that prepared by conventional process, and the stress of TiO2 film changes gradually from tensile stress into compressive stress with increasing ion energy; while the film stress of SiO2 is a tensile stress under ion-beam assisted deposition because of the ion-beam sputtering effect, and the film refractive index decreases with increasing ion energy. A dynamic film stress control can be achieved through in-situ adjustment of the processing parameters based on the online film stress measuring technique, and the intrinsic stress of film can be effectively changed through film doping.展开更多
Based on the two-dimensional constitutive relationships of the piezoelectric material, an analytical solution for an intelligent beam excited by a pair of piezoelectric actuators is derived. With the solution the forc...Based on the two-dimensional constitutive relationships of the piezoelectric material, an analytical solution for an intelligent beam excited by a pair of piezoelectric actuators is derived. With the solution the force and moment generated by two piezoelectric actuators and a pair of piezoelectric actuator/sensor are obtained. Examples of a cantilever piezo electric laminated beam or a simply supported piezoelectric laminated beam, applied with voltages, are given.展开更多
文摘Layered Surface Acoustic Wave (SAW) devices with an InO_x/SiN_u/36°YX LiTaO_3 structure were investigated for sensing low concentrations of hydrogen (H_2) and ozone (O_3) at different operating temperatures.The sensor consists of a 1μm thick silicon nitride (SiN_y) intermediate layer deposited by electron beam evaporation on a 36°Y-cut X-propagating piezoelectric lithium tantalate (LiTaO_3) substrate and a 100 nm thin indium oxide (InO_x) sensing layer deposited by R.F.magnetron sputtering.The device fabrication is described and the performance of the sensor is analyzed in terms of response magnitude as a function of operating temperature.Large frequency shifts of 360 kHz for 600μg/g of H_2 and 92 kHz for 40 ng/g O_3 were recorded.In addition,the surface morphology of the deposited films were investigated by Atomic Force Microscopy (AFM) and the chemical composition by X-Ray Photoelectron Spectroscopy (XPS) to correlate gas-sensing behavior to structural characteristics of the thin film.
文摘In the present paper,the electron beam irradiation was used to improve gas sensing properties of ZnGa_2O_4 gas sensors.The effects of electron beam irradiation on the performance of ZnGa_2O_4 gas sensors were reported.Results show that the sensitivity of ZnGa_2O_4 gas sensors to various gases increased after electron beam irradiation,and the optimal working temperature decreased.The effect of irradiation dose and the reaction mechanism were discussed.
基金National Key R&D Program of China(No.2021YFE0107800)National Science Foundation for Distinguished Young Scholars(No.52325805)CCCC Academician Special Scientific Research Funding Project(No.YSZX-03-2021-01-B).
文摘Based on Hartmann-Shack sensor technique, an online thin film stress measuring system was introduced to measure the film stresses of TiO2 and SiO2, and comparison was made between the film stresses prepared respectively by the conventional process and the ion-beam assisted deposition. The effect of ion-beam assisted deposition on the film stresses of TiO2 and SiO2 was investigated in details, and the stress control methodologies using on-line adjustment and film doping were put forward. The results show that the film stress value of TiO2 prepared by ion-beam assisted deposition is 40 MPa lower than that prepared by conventional process, and the stress of TiO2 film changes gradually from tensile stress into compressive stress with increasing ion energy; while the film stress of SiO2 is a tensile stress under ion-beam assisted deposition because of the ion-beam sputtering effect, and the film refractive index decreases with increasing ion energy. A dynamic film stress control can be achieved through in-situ adjustment of the processing parameters based on the online film stress measuring technique, and the intrinsic stress of film can be effectively changed through film doping.
文摘Based on the two-dimensional constitutive relationships of the piezoelectric material, an analytical solution for an intelligent beam excited by a pair of piezoelectric actuators is derived. With the solution the force and moment generated by two piezoelectric actuators and a pair of piezoelectric actuator/sensor are obtained. Examples of a cantilever piezo electric laminated beam or a simply supported piezoelectric laminated beam, applied with voltages, are given.
