A study of pulsed high voltage driven hollow-cathode electron beam sources through synchronous optical trigger

In this study,a pulsed,high voltage driven hollow-cathode electron beam sources through an optical trigger is designed with characteristics of simple structure,low cost,and easy triggering.To validate the new design,the characteristics of hollow-cathode discharge and electron beam characterization under pulsed high voltage drive are studied experimentally and discussed by discharge characteristics and analyses of waveform details,respectively.The validation experiments indicate that the pulsed high voltage supply significantly improves the frequency and stability of the discharge,which provides a new solution for the realization of a high-frequency,high-energy electron beam source.The peak current amplitude in the high-energy electron beam increases from 6.2 A to 79.6 A,which indicates the pulsed power mode significantly improves the electron beam performance.Besides,increasing the capacitance significantly affects the highcurrent,lower-energy electron beam more than the high-energy electron beam.

Atomic-Oxygen Beam Source with Compact ECR Plasma

An atomic-oxygen beam source with compact ECR plasma was successfully investigated. The microwave was produced and transmitted in a coaxial mode, and coupled with the loop. The plasma was produced at a higher asymmetry magnetic mirror field, and neutralized with the molybdenum target at a lower asymmetry magnetic mirror field. The magnetic field was constituted with permanent magnets. This source has a higher flux density of atom beam, a lower operating pressure, a smaller power consumption and low-cost. When it was installed at the equipment to study the interaction of the beam with the surface, the operation was carried out very easily and with a good stability.

Deposition of diamond like carbon films by using a single ion gun with varying beam source

Diamond like carbon films have been successfully deposited on the steel substrate, by using a single ion gun with varying beam source. The films may appear blue, yellow and transparent in color, which was found related to contaminants from the sample holder and could be avoided. The thickness of the films ranges from tens up to 200 nanometers, and the hardness is in the range 20 to 30 GPa. Raman analytical results reveal the films are in amorphous structure. The effects of different beam source on the films structure are further discussed.

RF Ion Beam Sources Used in Etching

Ion beam technology is used widely in many fields such as electric, material, optics, medicine, biology and so on. At the same time, it brings some huge technological effects and economical benefits, especially for the optical applocations. According for the technology, the properties of high accuarate spectral analyzer also can be improved by manufacturing the lage-area holographic ion beam eathing（HIBE） grating. Simultaneously, as one of the parts of ion beam technology, the developments of ion beam sources have some important effects to content the demands of ion beam technology such as large ion beam flux, excellent optical qualities. In this paper, an ion beam source called inductively coupled plasma（ICP） ion beam source was introduced, and the extractor system, the application prospect were also discussed.

Geometrical optics-based ray field tracing method for complex source beam applications

Due to the fact that traditional ray field tracking approaches require a large number of geometrical optical（GO） ray tubes,they are very inefficient in many practical applications.An improved ray model scheme for a complex source beam（CSB） tracking technique is proposed in this paper.The source field can be expressed by a superposition of CSBs,then every CSB basis function has a Gaussian-type amplitude distribution and is suitable for replacing a GO ray tube in the ray tracing approach.The complex phase matching technique is adopted to find the reflected beam in the reflection point where local approximation is used to represent the curved surface in its neighborhood.A new solution to multiple reflections using the conventional right-handed reflected system is used to track the field easily.Numerical results show the accuracy of the proposed method.

Discharge Characteristics of Large-Area High-Power RF Ion Source for Positive and Negative Neutral Beam Injectors

A large-area high-power radio-frequency（RF） driven ion source was developed for positive and negative neutral beam injectors at the Korea Atomic Energy Research Institute（KAERI）. The RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of high-power RF discharge. Plasma ignition of the ion source is initiated by the injection of argongas without a starter-filament heating, and the argon-gas is then slowly exchanged by the injection of hydrogen-gas to produce pure hydrogen plasmas. The uniformities of the plasma parameter,such as a plasma density and an electron temperature, are measured at the lowest area of the driver region using two RF-compensated electrostatic probes along the direction of the shortand long-dimensions of the driver region. The plasma parameters will be compared with those obtained at the lowest area of the expansion bucket to analyze the plasma expansion properties from the driver region to the expansion region.

Development of data acquisition and over-current protection systems for a suppressor-grid current with a neutral-beam ion source

Neutral beam injection is one of the effective auxiliary heating methods in magnetic-confinementfusion experiments. In order to acquire the suppressor-grid current signal and avoid the grid being damaged by overheating, a data acquisition and over-current protection system based on the PXI（PCI e Xtensions for Instrumentation） platform has been developed. The system consists of a current sensor, data acquisition module and over-current protection module. In the data acquisition module,the acquired data of one shot will be transferred in isolation and saved in a data-storage server in a txt file. It can also be recalled using NBWave for future analysis. The over-current protection module contains two modes： remote and local. This gives it the function of setting a threshold voltage remotely and locally, and the forbidden time of over-current protection also can be set by a host PC in remote mode. Experimental results demonstrate that the data acquisition and overcurrent protection system has the advantages of setting forbidden time and isolation transmission.

Influence of a centered dielectric tube on inductively coupled plasma source: Chamber structures and plasma characteristics

A high-density RF ion source is an essential part of a neutral beam injector. In this study, the authors attempt to retrofit an original regular RF ion source reactor by inserting a thin dielectric tube through the symmetric axis of the discharge chamber. With the aid of this inner tube, the reactor is capable of generating a radial magnetic field instead of the original transverse magnetic field, which solves the E × B drift problem in the current RF ion source structure. To study the disturbance of the dielectric tube, a fluid model is introduced to study the plasma parameters with or without the internal dielectric tube, based on the inductively coupled plasma（ICP） reactor. The simulation results show that while introducing the internal dielectric tube into the ICP reactor, both the plasma density and plasma potential have minor influence during the discharge process, and there is good uniformity at the extraction region. The influence of the control parameters reveals that the plasma densities at the extraction region decrease first and subsequently slow down while enhancing the diffusion region.

Ions Bombardment in Thin Films and Surface Processing

Ions bombardment is very important in thin films and surface processing. The ion energy and ion flux are two important parameters in ion bombardment. The ion current density mainly dependent on the plasma density gives the number of energetic ions bombarding the substrate. The self-bias voltage in plasma sheath accelerates plasma ions towards the substrate. RF discharge can increase plasma density and RF bias can also provide the insulator substrate with a plasma sheath. In order to choose and control ion energy, ion density, the angle of incidence, and ion species, ion beam sources are used. New types of electrodeless ion sources (RF, MW, ECR-MW) have been introduced in detail. In the last, the effects of ion bombardment on thin films and surface processing are presented.

The simulation of ultrasonic beams with a Gaussian beam equivalent point source model

Point Sources and Gaussian beams are used frequently as fundamental building blocks for developing ultrasonic beam models. Both these models have different weaknesses that limit their effectiveness. Here, we will show that one can develop a Gaussian Beam Equivalent Point Source （GBEPS） model that removes those weaknesses and combines the accuracy and versatility of the point source models with much of the speed and well-behaved nature of Gaussian beam models. We will demonstrate the efficiency and versatility of this new GBEPS model in simulating the beams generated from ultrasonic phased arrays, using as few as one Gaussian beam per element of the array. A single element GBEPS model will be shown to be as accurate as a point source model even when substantial beam focusing or steering is present in the array or where the array beam is transmitted through an interface. At the same time the GBEPS model will be shown to be several orders of magnitude faster than the point source model.

InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE

Heterojunction bipolar transistor (HBT) is of great interest for the application to microwave power and analog circuits. As known, decreasing bandgap energy of the base layer in HBT can result in a smaller turn-on voltage. Using InGaAs as a base material in GaAs HBT is a possible approach to achieve the aim. In this work, a novel InGaP/InGaAs/GaAs double heterojunction bipolar transistor (DHBT) structure with an InGaAs base was designed and grown by gas source molecular beam epitaxy (GSMBE). High-quality InGaAs/GaAs hetero epi-layers and a good doping figure were obtained through optimizing the layer structure and the growth condition. The DHBT devices of a 120 μm×120 μm emitter area were fabricated by normal process and the good DC performance was obtained. A breakdown voltage of 10 V and an offset voltage of just 0.4 V were achieved. These results indicate that the InGaP/InGaAs/GaAs DHBT is suitable for low power-dissipation and high power applications.

Effects of growth conditions on optical quality and surface morphology of InGaAsBi

The effects of Bi flux and pressure of AsH3 on Bi incorporation,surface morphology and optical properties of InGa As Bi grown by gas source molecular beam epitaxy are studied.It is found that using relatively low pressure of AsH3 and high Bi flux can strengthen the effect on the incorporation of Bi and increase its content linearly with Bi flux until it nearly reaches a saturation value.The result from Rutherford backscattering spectroscopy（RBS） confirms that the Bi incorporation can increase up to 1.13%.By adjusting Bi and As flux,we could improve the surface morphology of In Ga As Bi sample.Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the In Ga As bandgap.

Proposal for muon and white neutron sources at CSNS

The China Spallation Neutron Source （CSNS） is a large scientific facility with the main purpose of serving multidisciplinary research on material characterization using neutron scattering techniques. The accelerator system is to provide a proton beam of 120 kW with a repetition rate of 25 Hz initially （CSNSⅠ）, progressively upgradeable to 240 kW （CSNS-Ⅱ） and 500 kW （CSNS-Ⅱ＇）. In addition to serving as a driving source for the spallation target, the proton beam can be exploited for serving additional functions both in fundamental and applied research. The expanded scientific application based on pulsed muons and fast neutrons is especially attractive in the overall consideration of CSNS upgrade options. A second target station that houses a muon-generating target and a fast-neutron-generating target in tandem, intercepting and removing a small part of the proton beam for the spallation target, is proposed. The muon and white neutron sources are operated principally in parasitic mode, leaving the main part of the beam directed to the spallation target. However, it is also possible to deliver the proton beam to the second target station in a dedicated mode for some special applications. Within the dual target configuration, the thin muon target placed upstream of the fast-neutron target will consume only about 5% of the beam traversed; the majority of the beam is used for fast-neutron production. A proton beam with a beam power of about 60 kW, an energy of 1.6 GeV and a repetition rate of 12.5 Hz will make the muon source and the white neutron source very attractive to multidisciplinary researchers.

InP-based In_xGa_(1-x)As metamorphic buffers with different mismatch grading rates

Linearly graded In_xGa_（1-x）As metamorphic buffers with different mismatch grading rates were grown on InP substrate by gas source molecular beam epitaxy.Room temperature photoluminescence spectra show that the sample with lower mismatch grading rate in the buffer has stronger photoluminescence signal,indicating the improved optical property.Atomic force microscope images show that the lower mismatch grading rate in the buffer leads to a slightly rougher surface.The relaxation procedure with two steps in the buffer layers has been observed by X-ray diffraction reciprocal space mapping.The measurements of X-ray diffraction also reveal that the lower mismatch grading rate in the buffer is beneficial for the lattice relaxation and release of residual strain.To further increase the relaxation degree,a lower mismatch grading rate and composition ＂overshoot＂ are suggested.