A New Type of Fiber-induced Optically Controllable Silicon-loaded Millimeter Waveguide Switch

In this paper,a new type of optically controllable silicon slab loaded E-plane millimeterwave rectangular waveguide switch is presented.It uses SELFOC lens to couple optical puls-es to silicon slab with optical fiber.The on/off ratio reaches 42dB,the front fringe of suchkind swith is less than 0.05μs,and the insertion loss is less than 1dB in the full band of 26.5GHz to 40GHz.

New digital drive phase control for improving bias stability of silicon MEMS gyroscope

In order to improve the bias stability of the micro-electro mechanical system（MEMS） gyroscope and reduce the impact on the bias from environmental temperature,a digital signal processing method is described for improving the accuracy of the drive phase in the gyroscope drive mode.Through the principle of bias signal generation,it can be concluded that the deviation of the drive phase is the main factor affecting the bias stability.To fulfill the purpose of precise drive phase control,a digital signal processing circuit based on the field-programmable gate array（FPGA） with the phase-lock closed-loop control method is described and a demodulation method for phase error suppression is given.Compared with the analog circuit,the bias drift is largely reduced in the new digital circuit and the bias stability is improved from 60 to 19 °/h.The new digital control method can greatly increase the drive phase accuracy,and thus improve the bias stability.

Multi-channel 28-GHz millimeter-wave signal generation on a silicon photonic chip with automated polarization control

We propose and experimentally demonstrate an integrated silicon photonic scheme to generate multi-channel millimeter-wave(MMW) signals for 5 G multi-user applications. The fabricated silicon photonic chip has a footprint of 1.1 × 2.1 mm^2 and integrates 7 independent channels each having on-chip polarization control and heterodyne mixing functions. 7 channels of4-Gb/s QPSK baseband signals are delivered via a 2-km multi-core fiber(MCF) and coupled into the chip with a local oscillator(LO) light. The polarization state of each signal light is automatically adjusted and aligned with that of the LO light, and then 7 channels of 28-GHz MMW carrying 4-Gb/s QPSK signals are generated by optical heterodyne beating. Automated polarizationcontrol function of each channel is also demonstrated with ～7-ms tuning time and ～27-dB extinction ratio.

Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.

Temperature Fluctuation Synthesis/Simultaneous Densification and Microstructure Control of Titanium Silicon Carbide (Ti_3SiC_2) Ceramics

A novel temperature fluctuation synthesis/simultaneous densification process was developed for the preparation of Ti3SiC2 bulk ceramics. In this process. Si is used as an in-situ liquid forming phase and it is favorable for both the solid-liquid synthesis and the densification of Ti3SiC2 rainies. The present work demonstrated that the temperature fluctuation synthesis/simultaneous densification process is one of the most effective and simple methods for the preparation of Ti3SiC2 bulk materials providing relatively low synthesis temperature. short reaction time; and simultaneous synthesis and densification. This work also showed the capability to control the microstructure, e.g., the preferred orientation, of the bulk Ti3SiC2 materials simply by applying the hot pressing pressure at different Stages of the temperature fluctuation process. And textured Ti3SiC2 bulk materials with {002} faces of laminated Ti3SiC2 grains normal to the hot pressing axis were prepared.

Transverse thickness difference control technology for non-oriented silicon steel

Transverse thickness difference is an important quality index of non-oriented silicon steel strips. In order to fulfill users＇ accuracy requirements on the transverse thickness of silicon steel and improve the production yield, the factors influencing transverse thickness difference were analyzed. Then the work roll shape, control strategy and incoming hot-rolled strips were optimized. Since the optimization measures were implemented in the actual production, the thickness difference of non-oriented silicon steel has been reduced greatly and fulfilled the requirements placed by users. These measures have achieved remarkable effects.

Controlling spins in silicon quantum dots

Spins in silicon(Si)quantum dots(QDs),as a new type of solid state qubits,is expected to be a competitive contender in the long run of scalable quantum computation[1].Quantum computation is believed to be the next-generation computing technology to solve the problems that no classical computer can feasibly tackle.In the last decade.

Determination of Impurity Silicon in Anticancer Drug (Ge-132) by Electrothermally Atomised Atomic Absorption Spectrometry with Optical Temperature Control Accessory

The present paper describes the ashing and atomization processes in silicon analysis by electrothermally atomised atomic absorption spectrometry(EAAAS) with an uncoat-ed graphite tube, a pyrolytically coated graphite tube and a tungsten-coated graphitetube. The sensitivity and linear range of three graphite tubes were compared. By using optical temperature control accessory, the signals are enhanced by a factor of 2 and the germanium interferences in the determination of silicon are eliminated. The effects of time constant and carrier gas flow-rate on the determination of silicon were also tested. The sample can be directly analyzed in its aqueous solution without any pretreatment. The measurements of samples containing 0. 2 μg/mL and 0. 4 μg/mL silicon were run ten times and the variation coefficient is 4. 9% and 2.6%, respectively. The recovery tests for carboxyethyl germanium sesquioxide(Ge-132) synthesized and imported were performed, and the recoveries are 97. 0% and 110%, respectively. Keywords Carboxyethyl germanium sesquioxide, Electrothermally atomised atomic absorption spectrometry, Silicon

The Dynamic Characteristics of Silicone Rubber Isolator

The dynamic stiffness and the specific damping energy, as well as the vibration response characteristics of a silicone rubber isolator were researched. The results of the vibration test showed that the silicone rubber isolator was excellent in the performance of vibration control. The dynamic stiffness and the damping characteristics were non-linear. From the comparison between experimental results and simulation analysis, the displacement transmissibility characteristics of the isolator were obtained. As a result, the dynamic characteristics of the isolator could be accurately described by the quadratic type non-linear terms at small amolitude.

Use of Shore Hardness Tests for In-Process Properties Estimation/Monitoring of Silicone Rubbers

Casting is an important rubber manufacturing process for both production and material developments. A quick and flexible way of testing the constitutive materials properties of rubber products is very important for optimising the processing parameters and quality control. In many cases, standard tests such as tensile or compression tests are time consuming and require a large volume of materials. This work reports some recent work in using a combined numerical and experimental approach to characterise the properties of rubber materials during a casting process. Durometer shore hardness is used to test silicone rubbers (as a model material) with different compositions on different moulding planes and the linear elastic property is estimated from the hardnesses. The predicted properties are systematically compared with the experimental tests on hard and soft silicone rubber samples with different compositions. The work shows that shore hardness can be used as an effective way to monitor the materials properties during amoulding process for process optimisation and quality control.

Power Supply and Programmable Controller for Multishot Pellet Injector

MPI（multishot pellet injector） was imported from Russia about ten years ago. During the year＇s operation in HL-1M, most electrical equipments were repaired. Since the components are non-standard, so it is difficult to maintain. To fueling experiment meet the requirement of in HL-2A. The power supplies of fast valve and a programmable controller for shooting pellets were developed.

缓控释肥硅基膜材的制备与表征

以钙镁磷肥、硅丙树脂为主要原料,加入甲基硅酸钠作粘结剂,制备了缓控释肥硅基膜材,并采用撒粉离心包衣、底喷式流化床工艺制备了密封型硅钙镁磷肥、粘结型硅钙镁磷肥、改性硅丙树脂3种包膜尿素,通过静水试验研究了此3种包膜尿素的释放特征。结果表明,3种包膜尿素的释放周期分别为60、79、96 d,在水中均能保持完整球形,耐水性较好。通过扫描电镜、红外光谱、X-射线衍射法对膜材形貌特征和结构进行表征,发现钙镁磷肥和硅丙树脂为成膜材料;甲基硅酸钠作为密封剂和防水剂参与了成膜反应,有效增加了膜材的塑性和韧性,此复合材料可用作缓控释肥的胶结剂和包膜剂。

配施硅肥对稻飞虱取食量、田间种群数量及水稻产量的影响

为探明增施硅肥在水稻田稻飞虱绿色防控中的作用,本文采用室内蜜露测定、田间盆拍调查等方法研究了在广西代表性土壤条件下增施硅肥对稻飞虱蜜露量、田间种群数量及水稻产量的影响。结果表明:褐飞虱Nilaparvata lugens St l和白背飞虱Sogatella furcifera Horváth在施硅量为15 kg/hm^(2)和45 kg/hm^(2)水稻上的平均蜜露量均显著低于不施硅对照。在水稻分蘖期,与不施硅对照相比,15 kg/hm^(2)施硅处理下两个试验点稻飞虱发生量均显著减少;45 kg/hm^(2)施硅处理下宾阳试验点的稻飞虱发生量显著减少,而合浦试验点在水稻分蘖盛期稻飞虱发生量虽未显著减少,但水稻分蘖后期稻飞虱发生量极显著低于不施硅对照,减少了51.03%。在水稻灌浆期,与不施硅对照相比,宾阳试验点15 kg/hm^(2)和45 kg/hm^(2)施硅处理稻飞虱的发生量均极显著减少,而合浦试验点稻飞虱发生量没有显著变化。15 kg/hm^(2)和45 kg/hm^(2)施硅处理的稻谷千粒重均显著高于不施硅对照,产量比不施硅对照提高1.88%~9.05%。增施硅肥可明显降低水稻田稻飞虱的取食量和田间种群发生量,同时在一定程度上提高了稻谷产量,因此,水稻增施硅肥有助于广西稻飞虱的绿色防控。

基于高斯过程回归的永磁同步电机非线性磁链辨识

在新能源汽车发展领域,以碳化硅为代表的新一代半导体功率器件正在逐步取代硅基IGBT,崭新的技术生态对电机控制性能也有了更高的要求。从传统的PI控制、直接转矩控制到模型预测控制、神经网络控制等新算法,电机参数的精准度逐渐成为电控系统进一步提升性能的关键因素。针对永磁同步电机经典线性模型受交叉饱和等非线性因素影响不能适用于复杂多变工况的问题,提出基于高斯过程回归的非线性磁链辨识方法,使用二阶广义积分器获取动态工况中的磁链数据完成系统辨识,通过仿真与实验验证了该方案的有效性及参数辨识的准确性。

种衣剂减量下增施菌剂和肥料对小麦光合、产量、蚜虫及白粉病防控的影响

为探究拌种药剂减量下增施不同类型肥料对麦田蚜虫和白粉病防控及光合和产量的影响,以小麦蚜虫低感品种川麦104和高感品种内麦836为试验材料,采用大田试验,对种衣剂减量20%下,配合施用光合菌剂、微生物菌剂、硅肥或磷酸二氢钾后麦田土壤酶活性、小麦植株光合特性、病虫防治情况和产量性状的变化进行了比较分析。结果表明,拌种药剂减量20%条件下增施微生物菌剂较种衣剂常规用量处理能显著提高孕穗期川麦104的根际土壤的脲酶活性,以及内麦836的根际土壤过氧化氢酶和纤维素酶活性。在孕穗期和抽穗期,低感品种川麦104的麦蚜数量均显著低于内麦836;增施微生物菌剂和硅肥均能显著降低麦蚜和白粉病发生,对蚜虫防效和白粉病防效较常规药剂拌种用量处理分别提高8.0和10.2个百分点。拌种药剂减量20%配合施用光合菌剂、微生物菌剂、硅肥和磷酸二氢钾均能有效提高小麦旗叶氮素含量和SPAD值,改善叶片光合效率。增施硅肥下川麦104和内麦836的产量最高,较常规种衣剂用量处理分别增加16.0%和18.2%,差异均显著。以上结果说明,小麦种子种衣剂减量配合施用硅肥或微生物菌剂可有效提高麦田土壤酶活性,减少蚜虫和白粉病发生,改善小麦叶片光合特性,提高产量。

一种基于Si/SiC级联H桥逆变器的高性能模型预测控制方法

Si/SiC级联H桥逆变器,能够利用不同器件的开关组合保证低输出电流谐波畸变率(Total Harmonic Distortion,THD)和装置效率,但也带来了Si/SiC子模块开关分配的难题.对此,本论文设计一种变权重的模型预测控制方法(Model Predictive Control,MPC)选择总开关状态并分配子模块开关组合.该方法在选取逆变器总开关状态和Si/SiC子模块开关组合的代价函数中引入基于器件开关损耗的变权重,以改善逆变器的效率和输出电流谐波畸变率.在五电平Si/SiC级联H桥逆变装置上验证了变权重MPC的有效性,相比于固定权重MPC,输出电流THD最多降低2.05%,装置损耗最多降低4.53%.

基于硅基光电子芯片的低损耗动态偏振控制器

动态偏振控制器能够实现输入光场任意偏振态到输出光场任意偏振态的控制,可以动态补偿长距离单模光纤导致的双折射效应,是量子通信和相干通信系统中的重要器件.本文设计并实验验证了基于硅基光电子芯片的低损耗动态偏振控制器,芯片采用标准的绝缘体上硅工艺制作,器件整体尺寸为5.20 mm×0.12 mm×0.80 mm,整体损耗为5.7 dB,最大功耗为0.2W.基于可变步长.模拟退火算法、低噪声探测器和高静态消光比的器件,动态偏振消光比可锁定至30 dB以上.芯片采用热相移器对TE0光场的相位延迟量进行控制,整体为0°/45°/0°/45°结构,可实现无端偏振控制.基于Lumerical软件对核心部件偏振旋转分束结构进行了优化,该结构将以端面耦合方式进入波导中的TM0模式光场转化至另一波导中的TE0模式光场,而原单波导中TE0模式光场不发生转化,实验测得动态偏振控制器的静态偏振消光比可达40 dB以上.该器件具有小体积、低功耗和低成本的特点,可以广泛应用于量子通信和相干通信等领域,特别是需要考虑体积、功耗和成本的应用场合.

硅片磨床伺服进给系统仿真模型与分析

在硅片磨削时,硅片加工质量与硅片磨床的进给系统性能密切相关。为了提升硅片磨床进给系统的精度和稳定性,提出了采用上位机、运动控制卡、伺服驱动器、位置传感器进行闭环控制进给的技术方案。研究了伺服系统和机械系统两者之间的相互耦合关系,建立了动力学模型,搭建了基于PID控制的三闭环控制系统,采用MATLAB中Simulink模块对进给系统进行仿真分析。仿真结果表明,磨床进给系统速度波动量在1%以下满足硅片磨削对进给精度的要求。

高牌号无取向硅钢生产流程中织构控制研究现状

在节能减排的背景之下,水电、风电和核电等清洁能源行业得到了快速发展。高牌号无取向硅钢是上述发电机组应用最普遍的铁芯材料。因此,开发低铁损和高磁感的高牌号无取向硅钢是清洁能源产业高质量发展的前提条件。织构是影响高牌号无取向硅钢磁感和铁损的主要因素之一,受到生产工艺的影响。然而,高牌号无取向硅钢工艺流程长,影响织构控制的工艺因素众多。为了满足高牌号无取向硅钢在低铁损时实现高磁感,在产品加工时应尽量避免对磁性能不利的{111}织构的形成,促进对其有利的{100}和{110}织构形成。本文首先介绍了高牌号无取向硅钢的工艺流程,对比了国内外钢铁企业产品的磁性能(P_(15/50)和B_(50))。其次,阐述了高牌号无取向硅钢在炼钢、热轧、常化、冷轧和成品退火过程中促进有利织构形成的影响因素。最后,归纳出能促进高牌号无取向硅钢有利织构形成的生产工艺,并对织构控制的发展方向提出了建议。