Selected-area deposition (SAD) of diamond films was achieved on silicon substrates with carbon film mask by hot filament chemical vapor deposition.Needle tip scraped lines were used to grow diamond films.Scanning elec...Selected-area deposition (SAD) of diamond films was achieved on silicon substrates with carbon film mask by hot filament chemical vapor deposition.Needle tip scraped lines were used to grow diamond films.Scanning electron microscope (SEM) investigation demonstrates that highly selective and sharp edged diamond films were produced.The results also demonstrate that the proper substrate temperature is very important for diamond selective growth in this deposition process.Since the enhancement of diamond growth was not observed on the needle tip scraped area of Si wafer with diamond powder scratching,the selective growth was considered to be closely correlated to silicon carbide formed during carbon film deposition and the residual carbon in the scraped area.展开更多
In situ infrared absorption spectroscopy has been measured for a hot filament diamond growth process. Absorption of CH4 and C2H2 species at 3050 cm-1 and 730 cm-1 were detected respectively. The absorption intensity o...In situ infrared absorption spectroscopy has been measured for a hot filament diamond growth process. Absorption of CH4 and C2H2 species at 3050 cm-1 and 730 cm-1 were detected respectively. The absorption intensity of CH4 decreases while that of C2H2 increases as filament temperature is raised. The correlation between infrared absorption intensity and diamond growth rate or diamond film quality was found. High C2H2 or low CH4 concentration in the reaction region leads to high quality diamond film growth and high growth rate.展开更多
基金the Key Project of Chinese Academy of Sciences Knowledge Innovation Program (Grant No.KJCX3.SYW.N10)
文摘Selected-area deposition (SAD) of diamond films was achieved on silicon substrates with carbon film mask by hot filament chemical vapor deposition.Needle tip scraped lines were used to grow diamond films.Scanning electron microscope (SEM) investigation demonstrates that highly selective and sharp edged diamond films were produced.The results also demonstrate that the proper substrate temperature is very important for diamond selective growth in this deposition process.Since the enhancement of diamond growth was not observed on the needle tip scraped area of Si wafer with diamond powder scratching,the selective growth was considered to be closely correlated to silicon carbide formed during carbon film deposition and the residual carbon in the scraped area.
基金Supported by the High Technology Research and Development Programme of China.
文摘In situ infrared absorption spectroscopy has been measured for a hot filament diamond growth process. Absorption of CH4 and C2H2 species at 3050 cm-1 and 730 cm-1 were detected respectively. The absorption intensity of CH4 decreases while that of C2H2 increases as filament temperature is raised. The correlation between infrared absorption intensity and diamond growth rate or diamond film quality was found. High C2H2 or low CH4 concentration in the reaction region leads to high quality diamond film growth and high growth rate.
