Calcium bismuth niobate(CBN)ceramic,as a core element of high-temperature piezoelectric sensors,has attracted widespread attention due to its high Curie temperature within the class of Aurivillius compounds.However,CB...Calcium bismuth niobate(CBN)ceramic,as a core element of high-temperature piezoelectric sensors,has attracted widespread attention due to its high Curie temperature within the class of Aurivillius compounds.However,CBN usually faces two shortcomings.poor piezoelectric constant and low resistivity.In this work,CBN-based ceramics with donor–acceptor ions(W/Co)co-substituted at B-site were prepared by solid-state reaction method,and structure–property relationship of ceramics was studied in detail.Co-substitution of W/Co ions effectively improved the electrical property and hardness of CBN ceramics.CaBi_(2)Nb_(1.91)(W_(2/3)Co_(1/3)T_(0.09)O_(9))exhibits enhanced electrical and mechanical properties including high resistivity of-10^(7)Ω·cm at 500℃,piezoelectric constant of-15.3 pC/N and hardness value of-3.57 GPa.These values are two orders of magnitude,over two times,and 1.36 times higher than those of pure CBN ceramic,respectively.This work provides a reference for exploring other bismuth-layered structural ceramics.展开更多
A novel antifuse structure with amorphous bismuth zinc niobate（a-BZN） dielectrics was proposed.The characteristics of the a-BZN antifuse were investigated.Programming direction of up to down was chosen to rupture th...A novel antifuse structure with amorphous bismuth zinc niobate（a-BZN） dielectrics was proposed.The characteristics of the a-BZN antifuse were investigated.Programming direction of up to down was chosen to rupture the a-BZN antifuse.The breakdown voltage of the a-BZN antifuse was obtained at a magnitude of 6.56 V.A large off-state resistance of more than 1 GΩfor the a-BZN antifuse was demonstrated.The surface micrograph of the ruptured a-BZN antifuses was illustrated.Programming characteristics with the programming time of 0.46 ms and on-state properties with the average resistance value of 26.1Ωof the a-BZN antifuse were exhibited.The difference of characteristics of the a-BZN antifuse from that of a cubic pyrochlore bismuth zinc niobate（cp-BZN） antifuse and gate oxide antifuse was compared and analyzed.展开更多
CaBi_(2)Nb_(2)O_(9) thin film capacitors were fabricated on SrRuO_(3)-buffered Pt(111)/Ti/Si(100)substrates by adopting a two-step fabrication process.This process combines a low-temperature sputtering deposition with...CaBi_(2)Nb_(2)O_(9) thin film capacitors were fabricated on SrRuO_(3)-buffered Pt(111)/Ti/Si(100)substrates by adopting a two-step fabrication process.This process combines a low-temperature sputtering deposition with a rapid thermal annealing(RTA)to inhibit the grain growth,for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis.By using this method,CaBi_(2)Nb_(2)O_(9) thin films with uniformly distributed nanograins were obtained,which display a large recyclable energy density Wrec≈69 J/cm^(3) and a high energy efficiencyη≈82.4%.A superior fatigue-resistance(negligible energy performance degradation after 10^(9) charge-discharge cycles)and a good thermal stability(from-170 to 150℃)have also been achieved.This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.展开更多
基金supported by the National Natural Science Foundation of China[51932010,12004267]Natural Science Foundation Project of Chongqing Science&Technology Commission[CSTB2024NSCQ-MSX2081]+3 种基金Scientific and Technological Research Program of Chongqing Municipal Education Commission[KJQN202401132]Open Project Fund of Key Laboratory of Inorganic Functional Materials and Devices,ChineseAcademy of Sciences[KLIFMD202311]Sichuan Science and Technology Program[23ZDYF0173]the Cultivation Project of CQUT for Research and Innovation Group.
文摘Calcium bismuth niobate(CBN)ceramic,as a core element of high-temperature piezoelectric sensors,has attracted widespread attention due to its high Curie temperature within the class of Aurivillius compounds.However,CBN usually faces two shortcomings.poor piezoelectric constant and low resistivity.In this work,CBN-based ceramics with donor–acceptor ions(W/Co)co-substituted at B-site were prepared by solid-state reaction method,and structure–property relationship of ceramics was studied in detail.Co-substitution of W/Co ions effectively improved the electrical property and hardness of CBN ceramics.CaBi_(2)Nb_(1.91)(W_(2/3)Co_(1/3)T_(0.09)O_(9))exhibits enhanced electrical and mechanical properties including high resistivity of-10^(7)Ω·cm at 500℃,piezoelectric constant of-15.3 pC/N and hardness value of-3.57 GPa.These values are two orders of magnitude,over two times,and 1.36 times higher than those of pure CBN ceramic,respectively.This work provides a reference for exploring other bismuth-layered structural ceramics.
基金Project supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices(No.KFJJ200909)
文摘A novel antifuse structure with amorphous bismuth zinc niobate（a-BZN） dielectrics was proposed.The characteristics of the a-BZN antifuse were investigated.Programming direction of up to down was chosen to rupture the a-BZN antifuse.The breakdown voltage of the a-BZN antifuse was obtained at a magnitude of 6.56 V.A large off-state resistance of more than 1 GΩfor the a-BZN antifuse was demonstrated.The surface micrograph of the ruptured a-BZN antifuses was illustrated.Programming characteristics with the programming time of 0.46 ms and on-state properties with the average resistance value of 26.1Ωof the a-BZN antifuse were exhibited.The difference of characteristics of the a-BZN antifuse from that of a cubic pyrochlore bismuth zinc niobate（cp-BZN） antifuse and gate oxide antifuse was compared and analyzed.
基金the financial support of the National Natural Science Foundation of China(Grant Nos.51772175 and 51872166)the Nano Projects of Suzhou City(Grant No.ZXG201445)+2 种基金the support from the Seed Funding for Top Talents in Qilu University of Technology(Shandong Academy of Sciences)the International Cooperation Research Project of Qilu University of Technology(Grant No.QLUTGJHZ2018003)the Independent Innovation Foundation of Shandong University(Grant Nos.2018JC045 and 2017ZD008).
文摘CaBi_(2)Nb_(2)O_(9) thin film capacitors were fabricated on SrRuO_(3)-buffered Pt(111)/Ti/Si(100)substrates by adopting a two-step fabrication process.This process combines a low-temperature sputtering deposition with a rapid thermal annealing(RTA)to inhibit the grain growth,for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis.By using this method,CaBi_(2)Nb_(2)O_(9) thin films with uniformly distributed nanograins were obtained,which display a large recyclable energy density Wrec≈69 J/cm^(3) and a high energy efficiencyη≈82.4%.A superior fatigue-resistance(negligible energy performance degradation after 10^(9) charge-discharge cycles)and a good thermal stability(from-170 to 150℃)have also been achieved.This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.
