The blockage probability and the blockage time are two important indexes for assessing the blockage efficiency of cluster munitions against the runway. The improved region-by-region searching method and the random sam...The blockage probability and the blockage time are two important indexes for assessing the blockage efficiency of cluster munitions against the runway. The improved region-by-region searching method and the random sampling method are proposed to calculate the blockage time by considering the minimum number of craters which need to be repaired after attack. A minimum leave window (MLW) with the minimum number of craters is found out as a region to be repaired,the blockage probability and the blockage time are calculated by the two methods in which the impact points of the sub-munitions are generated with Monte-Carlo simulation technique. An example is given to show the reasonableness of the two methods under the conditions of adequacy simulating times and enough sampling times,and how to choose the methods in application.展开更多
Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early resea...Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage (SPV) curve before activation and the spectral response curve (SRC) after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability (SEP) can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future.展开更多
基金Sponsored by the National Nature Science Foundation of China(60604020)Pre-research Project of National University of Defense Technology(JC2006-02-01)
文摘The blockage probability and the blockage time are two important indexes for assessing the blockage efficiency of cluster munitions against the runway. The improved region-by-region searching method and the random sampling method are proposed to calculate the blockage time by considering the minimum number of craters which need to be repaired after attack. A minimum leave window (MLW) with the minimum number of craters is found out as a region to be repaired,the blockage probability and the blockage time are calculated by the two methods in which the impact points of the sub-munitions are generated with Monte-Carlo simulation technique. An example is given to show the reasonableness of the two methods under the conditions of adequacy simulating times and enough sampling times,and how to choose the methods in application.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60678043 and 60801036)
文摘Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage (SPV) curve before activation and the spectral response curve (SRC) after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability (SEP) can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future.