The impact of potential barrier distribution on the transient performance of a static induction thyristor （SITH） in a channel determined by geometrical parameters and applied bias voltage is studied theoretically an...The impact of potential barrier distribution on the transient performance of a static induction thyristor （SITH） in a channel determined by geometrical parameters and applied bias voltage is studied theoretically and experimentally. The analytical expressions of potential barrier height and the I-V characteristics of the SITH are also derived. The main factors that influence the transient performance of the SITH between the blocking and conducting states, as well as the mechanism underlying the transient process, is thoroughly investigated. This is useful in designing, fabricating, optimizing and applying SITHs properly.展开更多
基金Project supported by the Scientific and Technological Supporting Program of Gansu Province,China(No.097GKCA052)
文摘The impact of potential barrier distribution on the transient performance of a static induction thyristor （SITH） in a channel determined by geometrical parameters and applied bias voltage is studied theoretically and experimentally. The analytical expressions of potential barrier height and the I-V characteristics of the SITH are also derived. The main factors that influence the transient performance of the SITH between the blocking and conducting states, as well as the mechanism underlying the transient process, is thoroughly investigated. This is useful in designing, fabricating, optimizing and applying SITHs properly.
