A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode

We propose and demonstrate to derive the Auger recombination coefficient by fitting efficiency-current and carrier lifetime-current curves simultaneously, which can minimize the uncertainty of fitting results. The obtained Auger recombination coefficient is 1.0x10(-31) cm(6)s(-1) in the present sample, which contributes slightly to efficiency droop effect.

Enhancing light extraction of GaN-based blue light-emitting diodes by a tuned nanopillar array

Surface patterning of p-GaN to improve the light extraction efficiency of GaN-based blue light-emitting diodes(LEDs) has been investigated. Periodic nanopillar arrays on p-GaN have been fabricated by polystyrene(PS) nanosphere lithography; the diameter of the nanopillars can be tuned to optimize the electrical and optical properties of the LEDs. The electroluminescence intensity of the nanopillar-patterned LEDs is better than that of conventional LEDs; the greatest enhancement increased the intensity by a factor of 1.41 at a 20 mA injection current. The enhancements can be explained by a model of bilayer film on a GaN substrate. This method may serve as a practical approach to improve the efficiency of light extraction from LEDs.

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer

InGaN/AIlnGaN superlattice （SL） is designed as the electron blocking layer （EBL） of an InGaN/GaN-based light- emitting diode （LED）. The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concen- tration, radiative recombination rate, electron leakage, internal quantum efficiency （IQE）, current-voltage （l-V） perfor- mance curve, light output-current （L-l） characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AIInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AIlnGaN SL EBL is used.

Improvement of the carrier distribution with GaN/InGa N/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode

In Ga N light-emitting diodes（LEDs） with Ga N/In Ga N/Al Ga N/In Ga N/Ga N composition-graded barriers are proposed to replace the sixth and the middle five Ga N barriers under the condition of removing the electron blocking layer（EBL）and studied numerically in this paper. Simulation results show that the specially designed barrier in the sixth barrier is able to modulate the distributions of the holes and electrons in quantum well which is adjacent to the specially designed barrier. Concretely speaking, the new barrier could enhance both the electron and hole concentration remarkably in the previous well and reduce the hole concentration for the latter one to some extent along the growth direction. What is more,a phenomenon, i.e., a better carrier distribution in all the wells, just appears with the adoption of the new barriers in the middle five barriers, resulting in a much higher light output power and a lower efficiency droop than those in a conventional LED structure.

Synthesis and blue light-emitting properties of 4,4'-bis(diphenylamino)-quinque(p-phenyl)s

An excellent organic blue light-emitting diode based on 4,4＇-bis（diphenylamino）-quinque（p-phenylene）s （OPP（5）-NPh） with a maximum luminance of up to 5000 cd/m^2 and a luminanous efficiency of 1.3 cd/A was reported. This diode was made by using a wide band-gap hole-blocking layer, F-TBB instead of PBD in the OLED devices. We attribute the good performance to the one trade-off involved in the use of F-TBB to obtain higher luminance is the increased turn-on voltages and slightly decreased device efficiencies.

Novel Blue Light-emitting PPV-based Copolymer Containing Triazole and Carbazole Units

A novel alternating conjugated copolymer containing triazole and carbazole units was synthesized by the Wittig reaction. The resulting bipolar conjugated polymer emits a pure light with good thermal stability, which is a promising candidate for polymer light emitting display.

Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

The performance of InGaN blue light-emitting diodes（LEDs） with different kinds of electron-blocking layers is investigated numerically.We compare the simulated emission spectra,electron and hole concentrations,energy band diagrams,electrostatic fields,and internal quantum efficiencies of the LEDs.The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer（EBL） has a strong spectrum intensity,mitigates efficiency droop,and possesses higher output power compared with the LEDs with the other three types of EBLs.These advantages could be because of the lower electron leakage current and more effective hole injection.The optical performance of the specifically designed LED is also improved in the case of large injection current.

A dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells

A strain-compensated InGaN quantum well（QW） active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode（LED） are improved compared with those of the conventional InGaN/GaN QW dual-blue LEDs based on a stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate.It is found that the optimal performance is achieved when the Al composition of the strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW.The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW,which can provide a better carrier confinement and effectively reduce leakage current.

Growth,leaf anatomy,and photosynthesis of cotton(Gossypium hirsutum L.)seedlings in response to four light-emitting diodes and high pressure sodium lamp

Background Light is a critical factor in plant growth and development,particularly in controlled environments.Light-emitting diodes(LEDs)have become a reliable alternative to conventional high pressure sodium(HSP)lamps because they are more efficient and versatile in light sources.In contrast to well-known specialized LED light spectra for vegetables,the appropriate LED lights for crops such as cotton remain unknown.Results In this growth chamber study,we selected and compared four LED lights with varying percentages(26.44%–68.68%)of red light(R,600–700 nm),combined with other lights,for their effects on growth,leaf anatomy,and photosynthesis of cotton seedlings,using HSP lamp as a control.The total photosynthetic photon flux density(PPFD)was(215±2)μmol·m-2·s-1 for all LEDs and HSP lamp.The results showed significant differences in all tested parameters among lights,and the percentage of far red(FR,701–780 nm)within the range of 3.03%–11.86%was positively correlated with plant growth(characterized by leaf number and area,plant height,stem diameter,and total biomass),palisade layer thickness,photosynthesis rate(Pn),and stomatal conductance(Gs).The ratio of R/FR(4.445–11.497)negatively influenced the growth of cotton seedlings,and blue light(B)suppressed stem elongation but increased palisade cell length,chlorophyll content,and Pn.Conclusion The LED 2 was superior to other LED lights and HSP lamp.It had the highest ratio of FR within the total PPFD(11.86%)and the lowest ratio of R/FR(4.445).LED 2 may therefore be used to replace HPS lamp under controlled environments for the study of cotton at the seedling stage.

Enhancing the Performance of Perovskite Light-Emitting Diodes via Synergistic Effect of Defect Passivation and Dielectric Screening

Metal halide perovskites,particularly the quasi-two-dimensional perovskite subclass,have exhibited considerable potential for next-generation electroluminescent materials for lighting and display.Nevertheless,the presence of defects within these perovskites has a substantial influence on the emission efficiency and durability of the devices.In this study,we revealed a synergistic passivation mechanism on perovskite films by using a dual-functional compound of potassium bromide.The dual functional potassium bromide on the one hand can passivate the defects of halide vacancies with bromine anions and,on the other hand,can screen the charged defects at the grain boundaries with potassium cations.This approach effectively reduces the probability of carriers quenching resulting from charged defects capture and consequently enhances the radiative recombination efficiency of perovskite thin films,leading to a significant enhancement of photoluminescence quantum yield to near-unity values(95%).Meanwhile,the potassium bromide treatment promoted the growth of homogeneous and smooth film,facilitating the charge carrier injection in the devices.Consequently,the perovskite light-emitting diodes based on this strategy achieve a maximum external quantum efficiency of~21%and maximum luminance of~60,000 cd m^(-2).This work provides a deeper insight into the passivation mechanism of ionic compound additives in perovskite with the solution method.

Flexible perovskite light-emitting diodes for display applications and beyond

The flexible perovskite light-emitting diodes(FPeLEDs),which can be expediently integrated to portable and wearable devices,have shown great potential in various applications.The FPeLEDs inherit the unique optical properties of metal halide perovskites,such as tunable bandgap,narrow emission linewidth,high photoluminescence quantum yield,and particularly,the soft nature of lattice.At present,substantial efforts have been made for FPeLEDs with encouraging external quantum efficiency(EQE)of 24.5%.Herein,we summarize the recent progress in FPeLEDs,focusing on the strategy developed for perovskite emission layers and flexible electrodes to facilitate the optoelectrical and mechanical performance.In addition,we present relevant applications of FPeLEDs in displays and beyond.Finally,perspective toward the future development and applications of flexible PeLEDs are also discussed.

The strategies for preparing blue perovskite light-emitting diodes

Metal halide perovskites have attracted tremendous interest due to their excellent optical and electrical properties,and they find many promising applications in the optoelectronic fields of solar cells,light-emitting diodes,and photodetectors.Thanks to the contributions of international researchers,significant progress has been made for perovskite light-emitting diodes(Pero-LEDs).The external quantum efficiencies(EQEs)of Pero-LEDs with emission of green,red,and near-infrared have all exceeded 20%.However,the blue Pero-LEDs still lag due to the poor film quality and deficient device structure.Herein,we summarize the strategies for preparing blue-emitting perovskites and categorize them into two:compositional engineering and size controlling of the emitting units.The advantages and disadvantages of both strategies are discussed,and a perspective of preparing high-performance blue-emitting perovskite is proposed.The challenges and future directions of blue PeroLEDs fabrication are also discussed.

Blue light-emitting polyfluorenes containing dibenzothiophene-S,S-dioxide unit in alkyl side chain

Blue light-emitting polyfluorenes containing dibenzothiophene-S,S-dioxide(SO) unit in alkyl side chain(PF-FSOs and PF-CzSOs) were synthesized. All the polymers show high thermal stability with the decomposition temperatures over400 °C. The highest occupied molecular orbital(HOMO) and the lowest unoccupied molecular orbital(LUMO) energy levels of the copolymer slightly decrease with the increase of SO content in side chain. PL spectra of the polymers show slightly red shift and broadening with the increase of solvent polarities, indicating unremarkable intramolecular charge transfer(ICT) effect in the polymers containing SO unit in alkyl side chain. EL spectra of the polymers are almost unchanged in the current densities from 100 to 400 mA cm.2, indicating the superb EL stability of the resulted polymers. The EL spectra of the copolymers exhibit obvious blue-shift and narrowing with the CIE of(0.18, 0.11) for PF-FSO10 and(0.17, 0.11) for PF-CzSO10, respectively,compared with PF-SO10 containing SO unit in main chain with the CIE of(0.16, 0.17) and PFO with the CIE of(0.18, 0.18).The superior device performances were obtained with the luminous efficiency(LEmax) of 1.17 and 0.68 cd A.1 for PF-FSO15 and PF-CzSO20, respectively, compared with the LEmax of 0.37 cd A.1 for PFO. The results indicate that linking SO unit to alkyl side chain of the polyfluorene is a promising strategy for efficient blue light-emitting polymers.

Bipolar Blue Light-emitting Polyfluorenes Containing Dibenzothiophene-S,S-dioxide/Carbazole Units

Bipolar blue light-emitting polyfluorenes（PFSO-Cz） containing electron-deficient dibenzothiophene-S,S- dioxide（SO） and electron-rich carbazole（Cz） unit were synthesized. All the polymers show a high thermal stability with the decomposition temperatures over 400 ℃ and higher photoluminescence quantum yields. The highest occupied molecular orbital energy levels（EHMH＇s） slightly enhance and the lowest unoccupied molecular orbital energy levels（ELuMo＇S） gently depress with the increase of Cz content in the polymers. PL spectra of the polymers display remarkable red shift and broadening with the increase of solvent polarities, indicating significant intramolecular charge transfer（ICT） effect in the polymers. Electroluminescence（EL） spectra of the polymers exhibit a broadening tendency with increasing the content of Cz unit in the polymers. The superior device performances were obtained with the maximum lumhlous efficiency（LEmax） of 5.2 cd/A, the maximum external quantum efficiency（EQEmax） of 4.8% and the Internationale de I＇Eclairage（CIE）（x,y） coordinates of （0.16, 0.17） for PFSO15-Cz10 based on the single-layer device of ITO/PEDOT：PSS/EL/CsF/A1. The results indicate that the efficient bipolar blue light-emitting polyfluorenes are also constructed by Suzuki copolymerization using the monomers in common use.

Fine-tuning the thicknesses of organic layers to realize high-efficiency and long-lifetime blue organic light-emitting diodes

By using p-bis（p - N, N-diphenyl-aminostyryl）benzene doped 2-tert-butyl-9, 10-bis-β-naphthyl）-anthracene as an emitting layer, we fabricate a high-efficiency and long-lifetime blue organic light emitting diode with a maximum external quantum efficiency of 6.19% and a stable lifetime at a high initial current density of 0.0375 A/cm2. We demonstrate that the change in the thicknesses of organic layers affects the operating voltage and luminous efficiency greater than the lifetime. The lifetime being independent of thickness is beneficial in achieving high-quality full-colour display devices and white lighting sources with multi-emitters.

Pure blue and white light electroluminescence in a multilayer organic light-emitting diode using a new blue emitter

We characterized the 6,12-bis{[N-（3,4-dimethylphenyl）-N-（2,4,5-trimethylphenyl）]amino} chrysene （BmPAC）, which has been proven to be a blue fluorescent emission with high EL efficiency. The blue fluorescent device exhibits good performance with an external quantum efficiency of 5.8% and current efficiency of 8.9 cd/A, respectively. Using BmPAC, we also demonstrate a hybrid phosphorescence/fluorescence white organic light-emitting device （WOLED） with high efficiency of 36.3 cd/A. In order to improve the relative intensity of blue light, we plus a blue light-emitting layer （BEML） in front of the orange light emitting layer （YEML） to take advantage of the excess singlet excitons. With the new emitting layer of BEML/YEML/BEML, we demonstrate the fluorescence/phosphorescence/fluorescence WOLED exhibits good performance with a current efficiency of 47 cd/A and an enhanced relative intensity of blue light.

High color rendering index white organic light-emitting diode using levofloxacin as blue emitter

Levofloxacin （LOFX）, which is well-known as an antibiotic medicament, was shown to be useful as a 452-nm blue emitter for white organic light-emitting diodes （OLEDs）. In this paper, the fabricated white OLED contains a 452-nm blue emitting layer （thickness of 30 nm） with 1 wt% LOFX doped in CBP （4,4＇-bis（carbazol-9-yl）biphenyl） host and a 584-nm orange emitting layer （thickness of 10 nm） with 0.8 wt% DCJTB （4-（dicyanomethylene）-2-tert-butyl-6-（1,1,7,7- tetramethyljulolidin-4-yl-vinyl）-4H-pyran） doped in CBE which are separated by a 20-nm-thick buffer layer of TPBi （2,2＇,2＂-（benzene-1,3,5-triyl）-tri（1-phenyl-lH-benzimidazole）. A high color rendering index （CRI） of 84.5 and CIE chromaticity coordinates of （0.33, 0.32）, which is close to ideal white emission CIE （0.333, 0.333）, are obtained at a bias voltage of 14 V. Taking into account that LOFX is less expensive and the synthesis and purification technologies of LOFX are mature, these results indicate that blue fluorescence emitting LOFX is useful for applications to white OLEDs although the maximum current efficiency and luminance are not high. The present paper is expected to become a milestone to using medical drug materials for OLEDs.

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-A1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

InGaN based light-emitting diodes （LEDs） with different electron blocking layers have been numerically investi- gated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells （MQWs）.

Finely regulated luminescent Ag-In-Ga-S quantum dots with green-red dual emission toward white light-emitting diodes

Ag-In-Ga-S(AIGS)quantum dots(QDs)have recently attracted great interests due to the outstanding optical properties and eco-friendly components,which are considered as an alternative replacement for toxic Pb-and Cd-based QDs.However,enormous attention has been paid to how to narrow their broadband spectra,ignoring the application advantages of the broadband emission.In this work,the AIGS QDs with controllable broad green-red dual-emission are first reported,which is achieved through adjusting the size distribution of QDs by controlling the nucleation and growth of AIGS crystals.Resultantly,the AIGS QDs exhibit broad dual-emission at green-and red-band evidenced by photoluminescence(PL)spectra,and the PL relative intensity and peak position can be finely adjusted.Furthermore,the dual-emission is the intrinsic characteristics from the difference in confinement effect of large particles and tiny particles confirmed by temperature-dependent PL spectra.Accordingly,the AIGS QDs(the size consists of 17 nm and 3.7 nm)with 530 nm and 630 nm emission could successfully be synthesized at 220°C.By combining the blue light-emitting diode(LED)chips and dual-emission AIGS QDs,the constructed white light-emitting devices(WLEDs)exhibit a continuous and broad spectrum like natural sunlight with the Commission Internationale de l’Eclairage(CIE)chromaticity coordinates of(0.33,0.31),a correlated color temperature(CCT)of 5425 K,color rendering index(CRI)of 90,and luminous efficacy of radiation(LER)of 129 lm/W,which indicates that the AIGS QDs have huge potential for lighting applications.