The theoretical expression of the relationship between optimumdoping content and crystal structure is presented as well as thepreparation methods. By using this expression, the optimum dopingcontent of silicon-coped b...The theoretical expression of the relationship between optimumdoping content and crystal structure is presented as well as thepreparation methods. By using this expression, the optimum dopingcontent of silicon-coped boron carbide thin film is calculated. Thequantitative calculation value is consistent with the experimentalresults. This theoretical expression is also appropriate to resolvethe optimum doping content for Other electric materials.展开更多
文摘The theoretical expression of the relationship between optimumdoping content and crystal structure is presented as well as thepreparation methods. By using this expression, the optimum dopingcontent of silicon-coped boron carbide thin film is calculated. Thequantitative calculation value is consistent with the experimentalresults. This theoretical expression is also appropriate to resolvethe optimum doping content for Other electric materials.
