GENERATOR VIBRATION FAULT DIAGNOSIS METHOD BASED ON ROTOR VIBRATION AND STATOR WINDING PARALLEL BRANCHES CIRCULATING CURRENT CHARACTERISTICS

Rotor vibration characteristics are first analyzed, which are that the rotor vibration of fundamental frequency will increase due to rotor winding inter-turn short circuit fault, air-gap dynamic eccentricity fault, or imbalance fault, and the vibration of the second frequency will increase when the air-gap static eccentricity fault occurs. Next, the characteristics of the stator winding parallel branches circulating current are analyzed, which are that the second harmonics circulating current will increase when the rotor winding inter-turn short circuit fault occurs, and the fundamental circulating current will increase when the air-gap eccentricity fault occurs, neither being strongly affected by the imbalance fault. Considering the differences of the rotor vibration and circulating current characteristics caused by different rotor faults, a method of generator vibration fault diagnosis, based on rotor vibration and circulating current characteristics, is developed. Finally, the rotor vibration and circulating current of a type SDF-9 generator is measured in the laboratory to verify the theoretical analysis presented above.

Fractal analysis of canopy architectures of Acacia angustissima, Gliricidia sepium, and Leucaena collinsii for estimation of aboveground biomass in a short rotation forest in eastern Zambia

A study was conducted at Msekera Regional Agricultural Research Station in eastern Zambia to （1） describe canopy branching properties of Acacia angustissima, Gliricidia sepium and Leucaena collinsii in short rotation forests, （2） test the existence of self similarity from repeated iteration of a structural unit in tree canopies, （3） examined intra-specifie relationships between functional branching characteristics, and （4） determine whether allometric equations for relating aboveground tree biomass to fractal properties could accurately predict aboveground biomass. Measurements of basal diameter （Din0） at 10em aboveground and total height （H）, and aboveground biomass of 27 trees were taken, but only nine trees representative of variability of the stand and the three species were processed for functional branching analyses （FBA） of the shoot systems. For each species, fractal properties of three trees, includ- ing fractal dimension （Dfract）, bifurcation ratios （p） and proportionality ratios （q） of branching points were assessed. The slope of the linear re- gression ofp on proximal diameter was not significantly different （P 〈 0.01） from zero and hence the assumption that p is independent of scale, a pre-requisite for use of fraetal branching rules to describe a fraetal tree canopy, was fulfilled at branching orders with link diameters 〉1.5 cm. The proportionality ration q for branching patterns of all tree species was constant at all scales. The proportion of q values 〉0.9 （fq） was 0.8 for all species. Mean fraetal dimension （Df^ct） values （1.5-1.7） for all species showed that branching patterns had an increasing magnitude of intricacy. Since Dfraet values were 〉1.5, branching patterns within species were self similar. Basal diameter （D10）, proximal diameter and Dfraet described most of variations in aboveground biomass, suggesting that allometric equa- tions for relating aboveground tree biomass to fractal properties could accurately predict aboveground biomass. Thus, assessed Acacia, Gliri- cidia and Leucaena trees were fractals and their branching propertiescould be used to describe variability in size and aboveground biomass.

An improved single-π equivalent circuit model for on-chip inductors in GaAs process

An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.