Vapor growth of V‑doped MoS_(2)monolayers with enhanced B‑exciton emission and broad spectral response

Dynamically engineering the optical and electrical properties in two-dimensional(2D)materials is of great signifcance for designing the related functions and applications.The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials;however,this approach still remains to be explored in 2D materials.Here,we systematically demonstrate the growth of vanadium-doped molybdenum disulfde(V-doped MoS_(2))monolayers via an alkali metal-assisted chemical vapor deposition method.Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS_(2)monolayers.This was also confrmed by Raman and X-ray photoelectron spectroscopy.Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS_(2)monolayers(with low doping concentration).Most importantly,through temperature-dependent study,we observed efcient valley scattering of the B-exciton,greatly enhancing its emission intensity.Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS_(2),where a clear n-type behavior transited frst to ambipolar and then to lightly p-type charge carrier transport.In addition,visible to infrared wide-band photodetectors based on V-doped MoS_(2)monolayers(with low doping concentration)were demonstrated.The V-doped MoS_(2)monolayers with distinct B-exciton emission,enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and ofer novel materials for optoelectronic applications.

Flexible broadband WS_(2)/Si optical position-sensitive detector with high sensitivity and fast speed

Si-based optical position-sensitive detectors(PSDs)have stimulated the interest of researchers due to their wide range of practical applications.However,due to the rigidity and fragility of Si crystals,the applications of flexible PSDs have been limited.Therefore,we presented a flexible broadband PSD based on a WS_(2)/Si heterostructure for the first time.A scalable sputtering method was used to deposit WS_(2)thin films onto the etched ultrathin crystalline Si surface.The fabricated flexible PSD device has a broad spectral response in the wavelength range of 450-1350 nm,with a high position sensitivity of~539.8 mV·mm^(−1)and a fast response of 2.3μs,thanks to the strong light absorption,the built-in electrical field at the WS_(2)/Si interface,and facilitated transport.Furthermore,mechanical-bending tests revealed that after 200 mechanical-bending cycles,the WS_(2)/Si PSDs have excellent mechanical flexibility,stability,and durability,demonstrating the great potential in wearable PSDs with competitive performance.