Simulation Study of CuO-Based Solar Cell with Different Buffer Layers Using SCAPS-1D

In copper oxide (CuO) based solar cells, various buffer layers such as CdS, In2S3, WS2 and IGZO have been investigated by solar cell capacitance simulator (SCAPS) in this work. By varying absorber and buffer layer thickness, photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) are determined. The highest efficiency achieved is 19.6% with WS2 buffer layer. The impact of temperature on all CuO-based solar cells is also investigated.

Preparation and characterization of Cd_(1-x)Zn_xS buffer layers for thin film solar cells

Cd1_xZnxS （x = 0, 0.1, 0.2, 0.3, 1.0） thin films have been grown successfully on soda-lime glass substrates by chemical bath deposition technique as a very promising buffer layer material for optoelectronic device applications. The composition, structural properties, surface morphol- ogy, and optical properties of Cd~_xZnxS thin films were characterized by energy dispersive analysis of X-ray tech- nique （EDAX）, X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and UV-Vis spectrophotometer tech- niques, respectively. The annealed films were observed to possess the deficient sulfur composition. The results of XRD show that the Cdl_xZnxS （x = 0. l） thin film annealed at 450 ~C forms hexagonal （wurtzite） structure with lattice parameters a = 0.408814 nm, c ： 0.666059 nm, and its average grain size is 24.9902 nm. The diffraction peaks become strong with the increasing annealing temperatures. The surface of Cdl_~ZnxS （x = 0.1） thin film annealed at 450 ~C is uninterrupted and homogenous as compared to other temperatures. From optical properties, it is observed that the presence of small amount of Zn results in marked changes in the optical band gap of CdS. The band gaps of the Cdl_xZnxS thin films vary from 2.42 to 3.51 eV as composition varies from x = 0.0 to 1.0.

Magnetic and Structural Properties in Co/Cu/Co Sandwiches with Ni and Cr Buffer Layers

The magnetic and structural properties in Co/Cu/Co sandwiches with Ni and Cr buffer layers were investigated. It was found that the coercivity in Ni layer buffered samples decreases with increasing Ni layer thickness, while that in Cr layer buffered ones increases with increasing Cr layer thickness, leading to a large difference in field sensitivity of their giant magnetoresistance (GMR) properties. X-ray diffraction and high resolution transmission electron microscope images exhibited that there is a strong fcc (111) texture in the samples with Ni buffer layer. But there are only randomly oriented potycrystalline grains in Cr buffered sandwiches. According to atomic force microscope topography, the surface roughness of Cr buffered sandwiches is smaller than that of Ni buffered ones. It is demonstrated that buffer layer influences both magnetic and structural properties in Co/Cu/Co sandwiches as well as their GMR characteristics.

Effect of Al_2O_3 Buffer Layers on the Properties of Sputtered VO_2 Thin Films

VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.

High Performance for Cu(In,Ga)Se2 Quaternary System-Based Solar Cells with Alternative Buffer Layers

In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as Jsc, Voc, QE and η of the quaternary system Cu(In,Ga)Se2 solar cells. The performance of Cu(In,Ga)Se2solar cells has been modeled and numerically simulated by using the SCAPS- 1D device simulation tool. The cells with a ZnSe, Zn(O,S) and (Zn,Mg)O buffer layers were compared with the reference CdS buffer layer. The investigation of ZnSe, Zn(O, S) and (Zn,Mg)O-based cells to substitute the traditional CdS in the future shows that the ZnSe-buffer layer is a potential material to replace CdS, which revealed the best efficiency of 20.76%, the other electrical parameters are: JSC = 34.6 mA/cm2, VOC = 0.76 V and FF = 79.6%. The losses as a function of the temperature are estimated at 0.1%/K, among all kinds of buffer layers studied. We have also shown that the use of a high band-gap buffer layer is necessary to obtain a better short-circuit current density JSC. From our results, we note that the chalcogenide solar cells with Zn-based alternative buffer layer have almost the same stability thatthe traditional CdS buffer layer solar cells have.

Molecular Beam Epitaxy of GaSb on GaAs Substrates with Compositionally Graded LT-GaAsxSb1-x Buffer Layers

We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using compositionally graded GaAsxSb1-x buffer layers. Optimization of GaAsxSb1-x growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of GaAsxSb1-x layers are found to be 420 degrees C and 0.5 mu m, respectively. The smallest full width at half maximum value and the root mean square surface roughness of 0.67nm over 2 x 2 mu m(2) area are achieved as a 250nm GaSb film is grown under optimized conditions.

Improved performance of polymer solar cells by using inorganic, organic, and doped cathode buffer layers

The interface between the active layer and the electrode is one of the most critical factors that could affect the device performance of polymer solar cells. In this work, based on the typical poly（3-hexylthiophene）：[6,6]-phenyl C61-butyric acid methyl ester （P3HT：PCBM） polymer solar cell, we studied the effect of the cathode buffer layer （CBL） between the top metal electrode and the active layer on the device performance. Several inorganic and organic materials commonly used as the electron injection layer in an organic light-emitting diode （OLED） were employed as the CBL in the P3HT：PCBM polymer solar cells. Our results demonstrate that the inorganic and organic materials like Cs2CO3, bathophenanthroline （Bphen）, and 8-hydroxyquinolatolithium （Liq） can be used as CBL to efficiently improve the device performance of the P3HT：PCBM polymer solar cells. The P3HT：PCBM devices employed various CBLs possess power conversion efficiencies （PCEs） of 3.0%-3.3%, which are ca. 50% improved compared to that of the device without CBL. Furthermore, by using the doped organic materials Bphen：Cs2CO3 and Bphen：Liq as the CBL, the PCE of the P3HT：PCBM device will be further improved to 3.5%, which is ca. 70% higher than that of the device without a CBL and ca. 10% increased compared with that of the devices with a neat inorganic or organic CBL.

Fabricating Buffer Layers for YBa_2Cu_3O_y Coated Conductor by Surface Oxidation Epitaxy

NiO buffer layers were formed on a tape of Ni for making YBCO coated conductor by surface-oxidation epitaxy （SOE） process. Different oxidizing conditions such as temperature and duration were studied for Ni tapes. It is found that the texture of NiO could be affected directly by the orientation and surface of substrate. X-ray diffraction （XRD） 2-2θ scan, φ-scan, and pole figure were employed to characterize the in-plane alignment and cube texture. X-ray φ-scan shows that NiO film is formed on Ni tape with high cube texture and a typical value at the full width at half maximum （FWHM） is ≤ 7.5°. Scanning electron microscopy was used to study the surface morphology of NiO films. No crack is found and the films appear dense. Such technique is simple and of low cost with perfect reproducibility, promising for developing long tapes.

Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.

Performance improvement of MEH-PPV:PCBM solar cells using bathocuproine and bathophenanthroline as the buffer layers

In this work, bathocuproine （BCP） and bathophenanthroline （Bphen）, commonly used in small-molecule organic solar cells （OSCs）, are adopted as the buffer layers to improve the performance of the polymer solar cells （PSCs） based on poly（2-methoxy-5-（2-ethylhexyloxy）-1,4-phenylenevinylene） （MEH-PPV）： [6,6]-phenyl-C61-butyric acid methyl ester （PCBM） bulk heterojunction. By inserting BCP or Bphen between the active layer and the top cathode, all the performance parameters are dramatically improved. The power conversion efficiency is increased by about 70% and 120% with 5-am BCP and 12-nm Bphen layers, respectively, when compared with that of the devices without any buffer layer. The performance enhancement is attributed to BCP or Bphen （i） increasing the optical field, and hence the absorption in the active layer, （ii） effectively blocking the excitons generated in MEH-PPV from quenching at organic/aluminum （Al） interface due to the large band-gap of BCP or Bphen, which results in a significant reduction in series resistance （Rs）, and （iii） preventing damage to the active layer during the metal deposition. Compared with the traditional device using LiF as the buffer layer, the BCP-based devices show a comparable efficiency, while the Bphen-based devices show a much larger efficiency. This is due to the higher electron mobility in Bphen than that in BCP, which facilitates the electron transport and extraction through the buffer layer to the cathode.

Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes

Two soluble tetraalkyl-substituted zinc phthalocyanines(ZnPcs)for use as anode buffer layer materials in tris(8-hydroxyquinoline)aluminum(Alq3)-based organic light-emitting diodes(OLEDs)are presented in this work.The holeblocking properties of these Zn Pc layers slowed the hole injection process into the Alq3 emissive layer greatly and thus reduced the production of unstable cationic Alq3(Alq3^+)species.This led to the enhanced brightness and efficiency when compared with the corresponding properties of OLEDs based on the popular poly-(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)buffer layer.Furthermore,because of the high thermal and chemical stabilities of these Zn Pcs,a nonaqueous film fabrication process was realized together with improved charge balance in the OLEDs and enhanced OLED lifetimes.

Growth of CeO_2, Y_2O_3 Buffer Layers for YBCO Coated Conductor

The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit the formation of NiO. In addition, the linear relationship between pre-depositing time and total depositing time is required to ensure the epitaxial growth of the films. The growth conditions of CeO2 and Y2O3 were comparatively studied, and it is found that the windows of substrate temperatures and pressures for CeO2 films are wider than that for Y2O3 films.

Preparation of MgO Films as Buffer Layers by Laser-ablation at Various Substrate Temperatures

MgO thin films were deposited on Si（100） substrates by laser ablation under various substrate temperatures （Tsub）,expecting to provide a candidate buffer layer for the textured growth of functional perovskite oxide films on Si substrates.The effect of Tsub on the preferred orientation,crystallinity and surface morphology of the films was investigated.MgO films in single-phase were obtained at 473-973 K.With increasing Tsub,the preferred orientation of the films changed from （200） to （111）.The crystallinity and surface morphology was different too,depending on Tsub.At Tsub=673 K,the MgO film became uniform and smooth,exhibiting high crystallinity and a dense texture.

Synthesis,Characterization and Photoluminescence of Well-Ordered ZnO Micropillars Grown on ZnO Buffer Layers

Using ZnO buffer layers prepared by simply thermal oxidation of ion beam sputtered Zn films, highly oriented and uniformly aligned single-crystalline ZnO micropillars arrays have been synthesized by thermal evaporation of Zn powder with flee catalysts at low temperature of 430℃ The ZnO micropillars show sharp hexagonal umbrella-like tips with thin ZnO nanowire grown on the tips. The umbrella-like tips grow in a layer-by-layer mode along the direction of [001]. The growth mechanism has been discussed. The formation of the micropillars basically depends on the gradually decreasing Zn vapor pressure and subsequently cooling process. The photoluminescence （PL） spectrum indicates a moderately good crystal quality of the ZnO micropillars. Our results may reinforce the understanding of the formation mechanism of different ZnO nano/microstructures. This kind of complex microstructures may find potential applications in multifunctional microdevices, optoelectronic and field emission devices.

Effects of HfO_2 buffer layers on the dielectric property and leakage current of Ba_(0.6)Sr_(0.4)TiO_3 thin films by pulsed laser deposition

Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.

Wedge-shaped HfO_(2) buffer layer-induced field-free spin-orbit torque switching of HfO_(2)/Pt/Co structure

Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.

Effect of Polymer Inclusion in Preparation of Thick LZO Buffer Layers for YBCO Coated Conductors

In this work, water-based precursor solutions suitable for dip-coating of thick La2Zr2O7 （LZO） buffer layers for coated conductors on Ni-5%W substrates with an inclusion of polymeric polyvinyl pyrrolidone were developed. The effect of varying percentage of the polymer addition on the preparation of the deposited films with maximum crack-free thickness was investigated. This novel water-based chemical solution deposition method involving polymers in two different chelate-chemistry compositions revealed the possibility to grow single, crack-free layers with thicknesses ranging from 140 to 280 nm, with good crystallinity and epitaxial growth. The effect of increasing polymer concentrations on the morphology and the structure of the films was studied. The appropriate buffer layer action of the films in preventing Ni diffusion was studied by X-ray photoelectron spectroscopy.

Low-Frequency Noise Properties of GaN Schottky Barriers Deposited on Intermediate Temperature Buffer Layers

Flicker noise and deep level transient spectroscopy were used to characterize defect properties of GaN films with different buffer structures. Results indicate improved properties with the use of intermediate temperature buffer layers due to the relaxation of residue strain in the films.

Metallurgical Behaviour and Carbon Diffusion in Buttering Deposits Prepared With and Without Buffer Layers

Use of a buttering deposit on ferritic steel in dissimilar metal weld（DMW） joint is a common practice in nuclear plants to connect pressure vessel components（ferritic steel） to pipelines（austenitic stainless steel）.Carbon migration and metallurgical changes near fusion interface（ferritic steel–austenitic stainless steel） lead to a steeper gradient in material properties,and minimizing this gradient is the major challenge in the manufacturing of DMW joints.Inconel 82 is often deposited on ferritic steel material as buttering to reducing the gradient of physical and attaining material compatibility.Inconel 82/182 fillers are used to minimize the carbon migration,but the results are not truly adequate.In this paper,Ni–Fe alloy（chromium-free） has been used as the intermediate buffer layer in the weld buttering deposit to address the issue of carbon migration and subsequent metallurgical deterioration.The weld pads with and without buffer layers of Ni–Fe alloy have been investigated and compared in detail for metallurgical properties and carbon diffusivities.Ni–Fe buffer layer can significantly control the carbon migration which resists the metallurgical deterioration.It showed the better results in postweld heat treatment and thermally aged conditions.The buttering deposit with Ni–Fe buffer layer could be the better choice for DMW joints requirements.

Optimization of n/i and i/p buffer layers in n-i-p hydrogenated microcrystalline silicon solar cells

Hydrogenated microcrystalline silicon （μc-Si：H） intrinsic films and solar cells with n-i-p configuration were prepared by plasma enhanced chemical vapor deposition （PECVD）. The influence of n/i and i/p buffer layers on the μc-Si：H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si：H buffer layer at i/p interface. By combining the above methods, the performance of μc-Si：H single-junction and a-Si：H/μc-Si：H tandem solar cells has been significantly improved.