In order to improve the total-dose radiation har dness of the buried oxides(BOX) in the structure of separation-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides w...In order to improve the total-dose radiation har dness of the buried oxides(BOX) in the structure of separation-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides with two different doses,2×10 15 and 3×10 15 cm -2 ,respectively.The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source.Despite the small difference between the doses of nitrogen implantation,the nitrogen-implanted 2×10 15 cm -2 BOX has a much higher hardness than the control sample (i.e.the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5×104rad(Si),whereas the nitrogen-implanted 3×10 15 cm -2 BOX has a lower hardness than uhe control sample.However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5×104 to 5×105rad (Si)).The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed.In addition,the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.展开更多
A novel high performance trench field stop （TFS） superjunction （S J） insulated gate bipolar transistor （IGBT） with a buried oxide （BO） layer is proposed in this paper. The BO layer inserted between the P-base ...A novel high performance trench field stop （TFS） superjunction （S J） insulated gate bipolar transistor （IGBT） with a buried oxide （BO） layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT （Conv-SJ）, the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop （gce（on）） and an improved tradeoff between gee（on） and turn-off loss （Eoff）, with no breakdown voltage （BV） degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5μm and Nn = Np = 3 × 10^15 cm^-3, the Vce（on） and Eoff of the proposed structure are 1.08 V and 2.81 mJ/cm2 with the collector doping concentration Nc = 1 × 10^18 cm^-3 and 1.12 V and 1.73 mJ/cm2 with Nc = 5 × 10^17 cm^-3, respectively. However, with the same device parameters, the Vce（on） and Eoff for the Conv-SJ are 1.81 V and 2.88 mJ/cm2 with Nc= 1 × 10^18 cm^-3 and 1.98 V and 2.82 mJ/cm2 with Nc = 5 ×10^17 cm^-3, respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.展开更多
A silicon-on-insulator （SOI） high performance lateral double-diffusion metal oxide semiconductor （LDMOS） on a compound buried layer （CBL） with a step buried oxide （SBO CBL SOI） is proposed. The step buried oxi...A silicon-on-insulator （SOI） high performance lateral double-diffusion metal oxide semiconductor （LDMOS） on a compound buried layer （CBL） with a step buried oxide （SBO CBL SOI） is proposed. The step buried oxide locates holes in the top interface of the upper buried oxide （UBO） layer. Furthermore, holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide （LBO） layer. Consequently, the electric fields in both the thin LBO and the thick UBO are enhanced by these holes, leading to an improved breakdown voltage. The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer. Moreover, SBO CBL SOI can also reduce the self-heating effect.展开更多
The catalytic performance of Mo supported on hierarchical alumina–silica(Si/Al = 15) with Mo loadings of 3, 6 and 15 wt% was investigated for the oxidative desulfurization(ODS) of model and real oil samples. Hierarch...The catalytic performance of Mo supported on hierarchical alumina–silica(Si/Al = 15) with Mo loadings of 3, 6 and 15 wt% was investigated for the oxidative desulfurization(ODS) of model and real oil samples. Hierarchical alumina–silica(h Al–Si) was synthesized by economical and ecofriendly silicate-1 seed-induced route using cetyltrimethylammonium bromide(CTAB) as mesoporogen. The effect of CTAB on the structure of catalyst was studied by characterization techniques. The results revealed that 6%Mo/h Al–Si had the highest sulfur removal compared to the other catalyst loadings. The effect of operating parameters was evaluated using Box–Behnken experimental design. The optimal desulfurization conditions with the 6%Mo/h Al–Si catalyst were determined at oxidation temperature of 67 ℃, oxidation time of 42 min, H2O2/S molar ratio of 8 and catalyst dosage of 0.008 g·ml^-1 for achieving a conversion of 95%. Under optimal conditions, different sulfur-containing compounds with initial concentration of 1000 ppm, Dibenzothiophene(DBT), Benzothiophene(BT) and Thiophen(Th), showed the catalytic oxidation reactivity in the order of DBT > BT>Th. According to the regeneration experiments, the 6%Mo/h Al–Si catalyst was reused 4 times with a little reduction in the performance. Also, the total sulfur content of gasoline and diesel after ODS process reached 156.6 and 4592.2 ppm, respectively.展开更多
A buried-oxide trench-gate bipolar-mode JFET （BTB-JFET） with an oxide layer buried under the gate region to reduce the gate-drain capacitance Cgd is proposed. Simulations with a resistive load circuit for power loss...A buried-oxide trench-gate bipolar-mode JFET （BTB-JFET） with an oxide layer buried under the gate region to reduce the gate-drain capacitance Cgd is proposed. Simulations with a resistive load circuit for power loss comparison at high frequency application are performed with 20V-rated power switching devices,including a BTB-JFET,a trench MOSFET （T-MOSFET） generally applied in present industry, and a conventional trench-gate bipolar-mode JFET （TB-JFET） without buried oxide,for the first time. The simulation results indicate that the switching power loss of the normally-on BTB-JFET is improved by 37% and 14% at 1MHz compared to the T-MOSFET and the normally-on TB-JFET, respectively. In order to demonstrate the validity of the simulation, the normally-on TB-JFET and BTB-JFET have been fabricated successfully for the first time, where the buried oxide structure is realized by thermal oxidation. The experimental results show that the Cgd of the BTB-JFET is decreased by 45% from that of the TB-JFET at zero source-drain bias. Compared to the TB-JFET,the switching time and switching power loss of the BTB-JFET decrease approximately by 7. 4% and 11% at 1MHz,respectively. Therefore,the normally-on BTB-JFET could be pointing to a new direction for the R＆D of low volt- age and high frequency switching devices.展开更多
BACKGROUND Abdominal paracentesis drainage(APD)is a safe and effective strategy for severe acute pancreatitis(SAP)patients.However,the effects of APD treatment on SAPassociated cardiac injury remain unknown.AIM To inv...BACKGROUND Abdominal paracentesis drainage(APD)is a safe and effective strategy for severe acute pancreatitis(SAP)patients.However,the effects of APD treatment on SAPassociated cardiac injury remain unknown.AIM To investigate the protective effects of APD on SAP-associated cardiac injury and the underlying mechanisms.METHODS SAP was induced by 5%sodium taurocholate retrograde injection in Sprague-Dawley rats.APD was performed by inserting a drainage tube with a vacuum ball into the lower right abdomen of the rats immediately after SAP induction.Morphological staining,serum amylase and inflammatory mediators,serum and ascites high mobility group box(HMGB)1,cardiac-related enzymes indexes and cardiac function,oxidative stress markers and apoptosis and associated proteins were assessed in the myocardium in SAP rats.Nicotinamide adenine dinucleotide phosphate oxidase activity and mRNA and protein expression were also examined.RESULTS APD treatment improved cardiac morphological changes,inhibited cardiac dysfunction,decreased cardiac enzymes and reduced cardiomyocyte apoptosis,proapoptotic Bax and cleaved caspase-3 protein levels.APD significantly decreased serum levels of HMGB1,inhibited nicotinamide adenine dinucleotide phosphate oxidase expression and ultimately alleviated cardiac oxidative injury.Furthermore,the activation of cardiac nicotinamide adenine dinucleotide phosphate oxidase by pancreatitis-associated ascitic fluid intraperitoneal injection was effectively inhibited by adding anti-HMGB1 neutralizing antibody in rats with mild acute pancreatitis.CONCLUSION APD treatment could exert cardioprotective effects on SAP-associated cardiac injury through suppressing HMGB1-mediated oxidative stress,which may be a novel mechanism behind the effectiveness of APD on SAP.展开更多
To harden silicon-on-insulator（SOI） wafers fabricated using separation by implanted oxygen（SIMOX） to total-dose irradiation,the technique of nitrogen implantation into the buried oxide（BOX） layer of SIMOX wafers...To harden silicon-on-insulator（SOI） wafers fabricated using separation by implanted oxygen（SIMOX） to total-dose irradiation,the technique of nitrogen implantation into the buried oxide（BOX） layer of SIMOX wafers can be used.However,in this work,it has been found that all the nitrogen-implanted BOX layers reveal greater initial positive charge densities,which increased with increasing nitrogen implantation dose.Also,the results indicate that excessively large nitrogen implantation dose reduced the radiation tolerance of BOX for its high initial positive charge density. The bigger initial positive charge densities can be ascribed to the accumulation of implanted nitrogen near the Si-BOX interface after annealing.On the other hand,in our work,it has also been observed that,unlike nitrogen-implanted BOX,all the fluorine-implanted BOX layers show a negative charge density.To obtain the initial charge densities of the BOX layers,the tested samples were fabricated with a metal-BOX-silicon（MBS） structure based on SIMOX wafers for high-frequency capacitance-voltage（C-V） analysis.展开更多
A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the b...A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the buried oxide layer(BOX) enhance the electric field in the BOX and a uniform surface electric field profile is obtained,which results in the enhancement of the breakdown voltage(BV).The compensation layer can provide additional P-type charges,and the optimal drift region concentration is increased in order to satisfy the reduced surface electric field(RESURF) condition.The numerical simulation results indicate that the vertical electric field in the BOX increases to 6 MV/cm and the B V of the proposed device increases by 300%in comparison to a conventional SOI LDMOS,while maintaining low on-resistance.展开更多
A series of batch-scale experiments were completed to investigate the effects of operational parameters on chemical oxygen demand (COD) removal by Fenton reagent for antibiotic pharmaceutical wastewater (APW). The sig...A series of batch-scale experiments were completed to investigate the effects of operational parameters on chemical oxygen demand (COD) removal by Fenton reagent for antibiotic pharmaceutical wastewater (APW). The significance of five operational factors including the mass ratio of H2O2/COD (g/g), the mole ratio of H2O2/Fe2+ (mol/mol), initial pH, oxidation temperature T, and reaction time t were evaluated statistically by Box-Behnken design (BBD). It was found that the five parameters were all significant to the COD removal efficiency by t-test, as well as the interactions between mass ratio/reaction time and oxidation temperature/reaction. The optimal COD removal efficiency (89.50%) was achieved when the mass ratio of H2O2/COD and the mole ratio of H2O2/Fe2+ were 3.00 and 5.00 respectively, with pH value of 3.68 at 298K for 72min reaction. A quadratic regression model with 0.9907 regression coefficient (R2) was developed which had good agreement to the experimental data.展开更多
Objective: To study the correlation of serum HMGB1 and sTLT-1 contents with oxidative stress response and endothelial injury in patients with ischemic stroke. Methods: The patients who were diagnosed with ischemic str...Objective: To study the correlation of serum HMGB1 and sTLT-1 contents with oxidative stress response and endothelial injury in patients with ischemic stroke. Methods: The patients who were diagnosed with ischemic stroke in Zhouzhi County People's Hospital between February 2015 and March 2017 were selected as the stroke group of the study, and healthy subjects who received physical examination during the same period were selected as the control group of the study. Serum was collected to determine the contents of HMGB1, sTLT-1, oxidative stress reaction molecules and endothelial injury molecules. Results: Serum HMGB1, sTLT-1, vWF, vWF-cp, sTM, ET-1, D-D, 8-OHdG, LPO and NOS contents of stroke group were significantly higher than those of control group while T-SOD and GSH-Px contents were significantly lower than those of control group;serum T-SOD and GSH-Px contents of stroke patients with high HMBG-1 content were significantly lower than those of stroke patients with low HMBG-1 content while 8-OHdG, LPO and NOS contents were significantly higher than those of stroke patients with low HMBG-1 content;serum vWF, vWF-cp, sTM, ET-1 and D-D contents of stroke patients with high sTLT-1 content were significantly higher than those of stroke patients with low sTLT-1 content. Conclusion: The abnormally elevated HMGB1 and sTLT-1 in serum of patients with ischemic stroke can induce oxidative stress response and aggravate endothelial injury.展开更多
文摘In order to improve the total-dose radiation har dness of the buried oxides(BOX) in the structure of separation-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides with two different doses,2×10 15 and 3×10 15 cm -2 ,respectively.The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source.Despite the small difference between the doses of nitrogen implantation,the nitrogen-implanted 2×10 15 cm -2 BOX has a much higher hardness than the control sample (i.e.the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5×104rad(Si),whereas the nitrogen-implanted 3×10 15 cm -2 BOX has a lower hardness than uhe control sample.However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5×104 to 5×105rad (Si)).The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed.In addition,the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.
基金Project supported by the National Science and Technology Major Project,China(Grant No.2011ZX02504-003)the Fundamental Research Funds for the Central Universities(Grant No.ZYGX2011J024)the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices,China(Grant No.KFJJ201301)
文摘A novel high performance trench field stop （TFS） superjunction （S J） insulated gate bipolar transistor （IGBT） with a buried oxide （BO） layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT （Conv-SJ）, the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop （gce（on）） and an improved tradeoff between gee（on） and turn-off loss （Eoff）, with no breakdown voltage （BV） degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5μm and Nn = Np = 3 × 10^15 cm^-3, the Vce（on） and Eoff of the proposed structure are 1.08 V and 2.81 mJ/cm2 with the collector doping concentration Nc = 1 × 10^18 cm^-3 and 1.12 V and 1.73 mJ/cm2 with Nc = 5 × 10^17 cm^-3, respectively. However, with the same device parameters, the Vce（on） and Eoff for the Conv-SJ are 1.81 V and 2.88 mJ/cm2 with Nc= 1 × 10^18 cm^-3 and 1.98 V and 2.82 mJ/cm2 with Nc = 5 ×10^17 cm^-3, respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.60806025 and 60976060)in part by the State Key Laboratory of Electronic Thin Films and Integrated Devices,China (Grant No.CXJJ201004)
文摘A silicon-on-insulator （SOI） high performance lateral double-diffusion metal oxide semiconductor （LDMOS） on a compound buried layer （CBL） with a step buried oxide （SBO CBL SOI） is proposed. The step buried oxide locates holes in the top interface of the upper buried oxide （UBO） layer. Furthermore, holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide （LBO） layer. Consequently, the electric fields in both the thin LBO and the thick UBO are enhanced by these holes, leading to an improved breakdown voltage. The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer. Moreover, SBO CBL SOI can also reduce the self-heating effect.
文摘The catalytic performance of Mo supported on hierarchical alumina–silica(Si/Al = 15) with Mo loadings of 3, 6 and 15 wt% was investigated for the oxidative desulfurization(ODS) of model and real oil samples. Hierarchical alumina–silica(h Al–Si) was synthesized by economical and ecofriendly silicate-1 seed-induced route using cetyltrimethylammonium bromide(CTAB) as mesoporogen. The effect of CTAB on the structure of catalyst was studied by characterization techniques. The results revealed that 6%Mo/h Al–Si had the highest sulfur removal compared to the other catalyst loadings. The effect of operating parameters was evaluated using Box–Behnken experimental design. The optimal desulfurization conditions with the 6%Mo/h Al–Si catalyst were determined at oxidation temperature of 67 ℃, oxidation time of 42 min, H2O2/S molar ratio of 8 and catalyst dosage of 0.008 g·ml^-1 for achieving a conversion of 95%. Under optimal conditions, different sulfur-containing compounds with initial concentration of 1000 ppm, Dibenzothiophene(DBT), Benzothiophene(BT) and Thiophen(Th), showed the catalytic oxidation reactivity in the order of DBT > BT>Th. According to the regeneration experiments, the 6%Mo/h Al–Si catalyst was reused 4 times with a little reduction in the performance. Also, the total sulfur content of gasoline and diesel after ODS process reached 156.6 and 4592.2 ppm, respectively.
文摘A buried-oxide trench-gate bipolar-mode JFET （BTB-JFET） with an oxide layer buried under the gate region to reduce the gate-drain capacitance Cgd is proposed. Simulations with a resistive load circuit for power loss comparison at high frequency application are performed with 20V-rated power switching devices,including a BTB-JFET,a trench MOSFET （T-MOSFET） generally applied in present industry, and a conventional trench-gate bipolar-mode JFET （TB-JFET） without buried oxide,for the first time. The simulation results indicate that the switching power loss of the normally-on BTB-JFET is improved by 37% and 14% at 1MHz compared to the T-MOSFET and the normally-on TB-JFET, respectively. In order to demonstrate the validity of the simulation, the normally-on TB-JFET and BTB-JFET have been fabricated successfully for the first time, where the buried oxide structure is realized by thermal oxidation. The experimental results show that the Cgd of the BTB-JFET is decreased by 45% from that of the TB-JFET at zero source-drain bias. Compared to the TB-JFET,the switching time and switching power loss of the BTB-JFET decrease approximately by 7. 4% and 11% at 1MHz,respectively. Therefore,the normally-on BTB-JFET could be pointing to a new direction for the R＆D of low volt- age and high frequency switching devices.
基金Supported by National Natural Science Foundation of China,No.81772001National Clinical Key Subject of China,No.41792113Technology Plan Program of Sichuan Provence,No.2015SZ0229,No.2016HH0067,No.2018JY0041and No.2019YJ0277
文摘BACKGROUND Abdominal paracentesis drainage(APD)is a safe and effective strategy for severe acute pancreatitis(SAP)patients.However,the effects of APD treatment on SAPassociated cardiac injury remain unknown.AIM To investigate the protective effects of APD on SAP-associated cardiac injury and the underlying mechanisms.METHODS SAP was induced by 5%sodium taurocholate retrograde injection in Sprague-Dawley rats.APD was performed by inserting a drainage tube with a vacuum ball into the lower right abdomen of the rats immediately after SAP induction.Morphological staining,serum amylase and inflammatory mediators,serum and ascites high mobility group box(HMGB)1,cardiac-related enzymes indexes and cardiac function,oxidative stress markers and apoptosis and associated proteins were assessed in the myocardium in SAP rats.Nicotinamide adenine dinucleotide phosphate oxidase activity and mRNA and protein expression were also examined.RESULTS APD treatment improved cardiac morphological changes,inhibited cardiac dysfunction,decreased cardiac enzymes and reduced cardiomyocyte apoptosis,proapoptotic Bax and cleaved caspase-3 protein levels.APD significantly decreased serum levels of HMGB1,inhibited nicotinamide adenine dinucleotide phosphate oxidase expression and ultimately alleviated cardiac oxidative injury.Furthermore,the activation of cardiac nicotinamide adenine dinucleotide phosphate oxidase by pancreatitis-associated ascitic fluid intraperitoneal injection was effectively inhibited by adding anti-HMGB1 neutralizing antibody in rats with mild acute pancreatitis.CONCLUSION APD treatment could exert cardioprotective effects on SAP-associated cardiac injury through suppressing HMGB1-mediated oxidative stress,which may be a novel mechanism behind the effectiveness of APD on SAP.
文摘To harden silicon-on-insulator（SOI） wafers fabricated using separation by implanted oxygen（SIMOX） to total-dose irradiation,the technique of nitrogen implantation into the buried oxide（BOX） layer of SIMOX wafers can be used.However,in this work,it has been found that all the nitrogen-implanted BOX layers reveal greater initial positive charge densities,which increased with increasing nitrogen implantation dose.Also,the results indicate that excessively large nitrogen implantation dose reduced the radiation tolerance of BOX for its high initial positive charge density. The bigger initial positive charge densities can be ascribed to the accumulation of implanted nitrogen near the Si-BOX interface after annealing.On the other hand,in our work,it has also been observed that,unlike nitrogen-implanted BOX,all the fluorine-implanted BOX layers show a negative charge density.To obtain the initial charge densities of the BOX layers,the tested samples were fabricated with a metal-BOX-silicon（MBS） structure based on SIMOX wafers for high-frequency capacitance-voltage（C-V） analysis.
基金supported by the Guangxi Natural Science Foundation of China(No.2010GXNSFB013054)the Guangxi Key Science and Technology Program ofChina(No.11107001-20)
文摘A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the buried oxide layer(BOX) enhance the electric field in the BOX and a uniform surface electric field profile is obtained,which results in the enhancement of the breakdown voltage(BV).The compensation layer can provide additional P-type charges,and the optimal drift region concentration is increased in order to satisfy the reduced surface electric field(RESURF) condition.The numerical simulation results indicate that the vertical electric field in the BOX increases to 6 MV/cm and the B V of the proposed device increases by 300%in comparison to a conventional SOI LDMOS,while maintaining low on-resistance.
基金Major Science and Technology Programs for Water Pollution Control and Treatment,China(No.2009ZX07317-006-02,No.2009ZX07317-008-01)State Key Laboratory of Urban Water Resource and Environment,China(No.2010DX02)
文摘A series of batch-scale experiments were completed to investigate the effects of operational parameters on chemical oxygen demand (COD) removal by Fenton reagent for antibiotic pharmaceutical wastewater (APW). The significance of five operational factors including the mass ratio of H2O2/COD (g/g), the mole ratio of H2O2/Fe2+ (mol/mol), initial pH, oxidation temperature T, and reaction time t were evaluated statistically by Box-Behnken design (BBD). It was found that the five parameters were all significant to the COD removal efficiency by t-test, as well as the interactions between mass ratio/reaction time and oxidation temperature/reaction. The optimal COD removal efficiency (89.50%) was achieved when the mass ratio of H2O2/COD and the mole ratio of H2O2/Fe2+ were 3.00 and 5.00 respectively, with pH value of 3.68 at 298K for 72min reaction. A quadratic regression model with 0.9907 regression coefficient (R2) was developed which had good agreement to the experimental data.
文摘Objective: To study the correlation of serum HMGB1 and sTLT-1 contents with oxidative stress response and endothelial injury in patients with ischemic stroke. Methods: The patients who were diagnosed with ischemic stroke in Zhouzhi County People's Hospital between February 2015 and March 2017 were selected as the stroke group of the study, and healthy subjects who received physical examination during the same period were selected as the control group of the study. Serum was collected to determine the contents of HMGB1, sTLT-1, oxidative stress reaction molecules and endothelial injury molecules. Results: Serum HMGB1, sTLT-1, vWF, vWF-cp, sTM, ET-1, D-D, 8-OHdG, LPO and NOS contents of stroke group were significantly higher than those of control group while T-SOD and GSH-Px contents were significantly lower than those of control group;serum T-SOD and GSH-Px contents of stroke patients with high HMBG-1 content were significantly lower than those of stroke patients with low HMBG-1 content while 8-OHdG, LPO and NOS contents were significantly higher than those of stroke patients with low HMBG-1 content;serum vWF, vWF-cp, sTM, ET-1 and D-D contents of stroke patients with high sTLT-1 content were significantly higher than those of stroke patients with low sTLT-1 content. Conclusion: The abnormally elevated HMGB1 and sTLT-1 in serum of patients with ischemic stroke can induce oxidative stress response and aggravate endothelial injury.
