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1200V大容量SiC MOSFET器件研制 被引量:4
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作者 刘新宇 李诚瞻 +3 位作者 罗烨辉 陈宏 高秀秀 白云 《电子学报》 EI CAS CSCD 北大核心 2020年第12期2313-2318,共6页
采用平面栅MOSFET器件结构,结合优化终端场限环设计、栅极bus-bar设计、JFET注入设计以及栅氧工艺技术,基于自主碳化硅工艺加工平台,研制了1200V大容量SiC MOSFET器件.测试结果表明,器件栅极击穿电压大于55V,并且实现了较低的栅氧界面... 采用平面栅MOSFET器件结构,结合优化终端场限环设计、栅极bus-bar设计、JFET注入设计以及栅氧工艺技术,基于自主碳化硅工艺加工平台,研制了1200V大容量SiC MOSFET器件.测试结果表明,器件栅极击穿电压大于55V,并且实现了较低的栅氧界面态密度.室温下,器件阈值电压为2.7V,单芯片电流输出能力达到50A,器件最大击穿电压达到1600V.在175℃下,器件阈值电压漂移量小于0.8V;栅极偏置20V下,泄漏电流小于45nA.研制器件显示出优良的电学特性,具备高温大电流SiC芯片领域的应用潜力. 展开更多
关键词 碳化硅 MOSFET 栅极bus-bar JFET注入 大容量器件 低漏电 高温半导体
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MMIC功率放大器中末级合成电路设计研究 被引量:3
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作者 贾建鹏 史磊 +1 位作者 祝大龙 刘德喜 《遥测遥控》 2017年第3期66-72,共7页
采用100nm AlGaN/GaN HEMT工艺,以尺寸为90μm×8的GaN HEMT作为末级晶体管,研究可工作于Ku波段的功放MMIC末级四路合成电路。选择ADS Momentum作为仿真工具,设计两种末级合成电路,并提出一种改进幅度一致性的设计方法。对两种合成... 采用100nm AlGaN/GaN HEMT工艺,以尺寸为90μm×8的GaN HEMT作为末级晶体管,研究可工作于Ku波段的功放MMIC末级四路合成电路。选择ADS Momentum作为仿真工具,设计两种末级合成电路,并提出一种改进幅度一致性的设计方法。对两种合成电路的各项指标进行比较,在14GHz^16GHz频段,簇丛式合成电路最大插损1.1d B,输出反射系数优于–18d B;Bus-bar总线合成电路最大插损0.9d B,输出反射系数优于–20d B。 展开更多
关键词 功率合成 MMIC ADS MOMENTUM 簇丛式 bus-bar
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Day-ahead Voltage-stability-constrained Network Topology Optimization with Uncertainties
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作者 Dingli Guo Lei Wang +2 位作者 Ticao Jiao Ke Wu Wenjing Yang 《Journal of Modern Power Systems and Clean Energy》 SCIE EI CSCD 2024年第3期730-741,共12页
A day-ahead voltage-stability-constrained network topology optimization(DVNTO)problem is proposed to find the day-ahead topology schemes with the minimum number of operations(including line switching and bus-bar split... A day-ahead voltage-stability-constrained network topology optimization(DVNTO)problem is proposed to find the day-ahead topology schemes with the minimum number of operations(including line switching and bus-bar splitting)while ensuring the sufficient hourly voltage stability margin and the engineering operation requirement of power systems.The AC continuation power flow and the uncertainty from both renewable energy sources and loads are incorporated into the formulation.The proposed DVNTO problem is a stochastic,largescale,nonlinear integer programming problem.To solve it tractably,a tailored three-stage solution methodology,including a scenario generation and reduction stage,a dynamic period partition stage,and a topology identification stage,is presented.First,to address the challenges posed by uncertainties,a novel problem-specified scenario reduction process is proposed to obtain the representative scenarios.Then,to obtain the minimum number of necessary operations to alter the network topologies for the next 24-hour horizon,a dynamic period partition strategy is presented to partition the hours into several periods according to the hourly voltage information based on the voltage stability problem.Finally,a topology identification stage is performed to identify the final network topology scheme.The effectiveness and robustness of the proposed three-stage solution methodology under different loading conditions and the effectiveness of the proposed partition strategy are evaluated on the IEEE 118-bus and 3120-bus power systems. 展开更多
关键词 Network topology optimization static voltage stability line switching bus-bar splitting renewable energy source
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