采用机械混合-浸渍法制备3种钙基复合载氧体,并在流化床中考察复合载氧体的煤化学链气化反应特性、循环反应性能以及反应过程中复合载氧体的硫释放规律。结果表明:900℃时3种复合载氧体与煤化学链气化反应的碳转化率、合成气含量、冷煤...采用机械混合-浸渍法制备3种钙基复合载氧体,并在流化床中考察复合载氧体的煤化学链气化反应特性、循环反应性能以及反应过程中复合载氧体的硫释放规律。结果表明:900℃时3种复合载氧体与煤化学链气化反应的碳转化率、合成气含量、冷煤气效率均高于载氧体Ca Ben的;Ca O的加入对Ca SO4副反应的抑制效果明显;选择复合载氧体Ca Ca Ben进行循环实验,在10次循环过程中,冷煤气效率稳定在83%左右,复合载氧体Ca Ca Ben循环反应性能良好。展开更多
Intrinsic zinc oxide films, normally deposited by radio frequency （RF） sputtering, are fabricated by direct current （DC） sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible ...Intrinsic zinc oxide films, normally deposited by radio frequency （RF） sputtering, are fabricated by direct current （DC） sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu （ln, Ga） Se2 （CIGS） solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.展开更多
文摘采用机械混合-浸渍法制备3种钙基复合载氧体,并在流化床中考察复合载氧体的煤化学链气化反应特性、循环反应性能以及反应过程中复合载氧体的硫释放规律。结果表明:900℃时3种复合载氧体与煤化学链气化反应的碳转化率、合成气含量、冷煤气效率均高于载氧体Ca Ben的;Ca O的加入对Ca SO4副反应的抑制效果明显;选择复合载氧体Ca Ca Ben进行循环实验,在10次循环过程中,冷煤气效率稳定在83%左右,复合载氧体Ca Ca Ben循环反应性能良好。
基金supported by the National "973" Program of China(Nos.2007CB936704 and 2009CB939903)the Natural Science Foundation of Shanghai,China(No.11ZR1441900)the Science and Technology Commission of Shanghai,China(Nos.10520706700 and 0952nm06500)
文摘Intrinsic zinc oxide films, normally deposited by radio frequency （RF） sputtering, are fabricated by direct current （DC） sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu （ln, Ga） Se2 （CIGS） solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.
