期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits
1
作者 刘晓贤 朱樟明 +2 位作者 杨银堂 丁瑞雪 李跃进 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第11期619-624,共6页
In this paper,ground-signal-ground type through-silicon vias(TSVs) exploiting air gaps as insulation layers are designed,analyzed and simulated for applications in millimeter wave.The compact wideband equivalent-cir... In this paper,ground-signal-ground type through-silicon vias(TSVs) exploiting air gaps as insulation layers are designed,analyzed and simulated for applications in millimeter wave.The compact wideband equivalent-circuit model and passive elements(RLGC) parameters based on the physical parameters are presented with the frequency up to 100 GHz.The parasitic capacitance of TSVs can be approximated as the dielectric capacitance of air gaps when the thickness of air gaps is greater than 0.75 μm.Therefore,the applied voltage of TSVs only needs to achieve the flatband voltage,and there is no need to indicate the threshold voltage.This is due to the small permittivity of air gaps.The proposed model shows good agreement with the simulation results of ADS and Ansoft's HFSS over a wide frequency range. 展开更多
关键词 capacitance parasitic wideband dielectric millimeter depletion insulation circuits transistor conductance
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部