Abnormal transition of the electron energy distribution with excitation of the second harmonic in low-pressure radio-frequency capacitively coupled plasmas

The self-excited second harmonic in radio-frequency capacitively coupled plasma was significantly enhanced by adjusting the external variable capacitor.At a lower pressure of 3 Pa,the excitation of the second harmonic caused an abnormal transition of the electron energy probability function,resulting in abrupt changes in the electron density and temperature.Such changes in the electron energy probability function as well as the electron density and temperature were not observed at the higher pressure of 16 Pa under similar harmonic changes.The phenomena are related to the influence of the second harmonic on stochastic heating,which is determined by both amplitude and the relative phase of the harmonics.The results suggest that the self-excited high-order harmonics must be considered in practical applications of lowpressure radio-frequency capacitively coupled plasmas.

Effect of a negative DC bias on a capacitively coupled Ar plasma operated at different radiofrequency voltages and gas pressures

The effect of a negative DC bias,|V_(dc)|,on the electrical parameters and discharge mode is investigated experimentally in a radiofrequency(RF)capacitively coupled Ar plasma operated at different RF voltage amplitudes and gas pressures.The electron density is measured using a hairpin probe and the spatio-temporal distribution of the electron-impact excitation rate is determined by phase-resolved optical emission spectroscopy.The electrical parameters are obtained based on the waveforms of the electrode voltage and plasma current measured by a voltage probe and a current probe.It was found that at a low|V_(dc)|,i.e.inα-mode,the electron density and RF current decline with increasing|V_(dc)|;meanwhile,the plasma impedance becomes more capacitive due to a widened sheath.Therefore,RF power deposition is suppressed.When|V_(dc)|exceeds a certain value,the plasma changes toα–γhybrid mode(or the discharge becomes dominated by theγ-mode),manifesting a drastically growing electron density and a moderately increasing RF current.Meanwhile,the plasma impedance becomes more resistive,so RF power deposition is enhanced with|V_(dc)|.We also found that the electrical parameters show similar dependence on|V_(dc)|at different RF voltages,andα–γmode transition occurs at a lower|V_(dc)|at a higher RF voltage.By increasing the pressure,plasma impedance becomes more resistive,so RF power deposition and electron density are enhanced.In particular,theα–γmode transition tends to occur at a lower|V_(dc)|with increase in pressure.

Modeling of the nanoparticle coagulation in pulsed radio-frequency capacitively coupled C_2H_2 discharges

The role of pulse parameters on nanoparticle property is investigated self-consistently based on a couple of fluid model and aerosol dynamics model in a capacitively coupled parallel-plate acetylene（C2H2） discharge. In this model, the mass continuity equation, momentum balance equation, and energy balance equation for neutral gas are taken into account.Thus, the thermophoretic force arises when a gas temperature gradient exists. The typical results of this model are positive and negative ion densities, electron impact collisions rates, nanoparticle density, and charge distributions. The simulation is performed for duty ratio 0.4/0.7/1.0, as well as pulse modulation frequency from 40 kHz to 2.7 MHz for pure C2H2 discharges at a pressure of 500 mTorr. We find that the pulse parameters, especially the duty ratio, have a great affect on the dissociative attachment coefficient and the negative density. More importantly, by decreasing the duty ratio, nanoparticles start to diffuse to the wall. Under the action of gas flow, nanoparticle density peak is created in front of the pulse electrode,where the gas temperature is smaller.

Effect of Addition of Nitrogen to a Capacitively Radio-Frequency Hydrogen Discharge

A hybrid PIC/MC model is developed in this work for H2-xN2 capacitively coupled radio-frequency （CCRF） discharges in which we take into account 43 kinds of collisions reaction processes between charged particles （e-, H3＋, H＋, H＋, N＋, N＋） and ground-state molecules （H2, H＋ N2）. In addition, the mean energies and densities of electrons and ions （ 3, H＋, H＋）, and electric field distributions in the H2-N2 CCRF discharge are simulated by this model. Furthermore, the effects of addition of a variable percentage of nitrogen （0-30%） into the H2 discharge on the plasma processes and discharge characteristics are studied. It is shown that by increasing the percentage of nitrogen added to the system, the RF sheath thickness will narrow, the sheath electric field will be enhanced, and the mean energy of hydrogen ions impacting the electrodes will be increased. Because the electron impact ionization and dissociative ionization rates increase when N2 is added to the system, the electron mean density will increase while the electron mean energy and hydrogen ion density near the electrodes will decrease. This work aims to provide a theoretical basis for experimental studies and technological developments with regard to H2-N2 CCRF plasmas.

Effect of Discharge Parameters on Properties of Diamond-Like Carbon Films Prepared by Dual-Frequency Capacitively Coupled Plasma Source

Diamond-like carbon （DLC） films were prepared with CH4-Ar using a capacitively coupled plasma enhanced chemical vapor deposition （CCP-CVD） method driven by dual-frequency of 41 MHz and 13.56 MHz in combination. Due to a coupling via bulk plasma, the self-bias voltage depended not only on the radiofrequency （RF） power of the corresponding electrode but also on another RF power of the counter electrode. The influence of the discharge parameters on the deposition rate, optical and Raman properties of the deposited films was investigated. The optical band decreased basically with the increase in the input power of both the low frequency and high frequency. Raman measurements show that the deposited films have a maximal sp3 content with an applied negative self-bias voltage of -150 V, while high frequency power causes a continuous increase in the sp3 content. The measurement of atomic force microscope （AFM） shows that the surface of the deposited films under ion-bombardment becomes smoother than those with non-intended self-bias voltage.

Discharge characteristic of very high frequency capacitively coupled argon plasma

The discharge characteristics of capacitively coupled argon plasmas driven by very high frequency discharge are studied.The mean electron temperature and electron density are calculated by using the Ar spectral lines at different values of power(20 W-70 W)and four different frequencies(13.56 MHz,40.68 MHz,94.92 MHz,and 100 MHz).The mean electron temperature decreases with the increase of power at a fixed frequency.The mean electron temperature varies non-linearly with frequency increasing at constant power.At 40.68 MHz,the mean electron temperature is the largest.The electron density increases with the increase of power at a fixed frequency.In the cases of driving frequencies of 94.92 MHz and 100 MHz,the obtained electron temperatures are almost the same,so are the electron densities.Particle-in-cell/Monte-Carlo collision(PIC/MCC)method developed within the Vsim 8.0 simulation package is used to simulate the electron density,the potential distribution,and the electron energy probability function(EEPF)under the experimental condition.The sheath width increases with the power increasing.The EEPF of 13.56 MHz and 40.68 MHz are both bi-Maxwellian with a large population of low-energy electrons.The EEPF of 94.92 MHz and 100 MHz are almost the same and both are nearly Maxwellian.

Effect of driving frequency on electron heating in capacitively coupled RF argon glow discharges at low pressure

A one-dimensional（1D） fluid model on capacitively coupled radio frequency（RF） argon glow discharge between parallel-plates electrodes at low pressure is established to test the effect of the driving frequency on electron heating. The model is solved numerically by a finite difference method. The numerical results show that the discharge process may be divided into three stages： the growing rapidly stage, the growing slowly stage, and the steady stage. In the steady stage,the maximal electron density increases as the driving frequency increases. The results show that the discharge region has three parts： the powered electrode sheath region, the bulk plasma region and the grounded electrode sheath region. In the growing rapidly stage（at 18 μs）, the results of the cycle-averaged electric field, electron temperature, electron density, and electric potentials for the driving frequencies of 3.39, 6.78, 13.56, and 27.12 MHz are compared, respectively. Furthermore,the results of cycle-averaged electron pressure cooling, electron ohmic heating, electron heating, and electron energy loss for the driving frequencies of 3.39, 6.78, 13.56, and 27.12 MHz are discussed, respectively. It is also found that the effect of the cycle-averaged electron pressure cooling on the electrons is to ＂cool＂ the electrons; the effect of the electron ohmic heating on the electrons is always to ＂heat＂ the electrons; the effect of the cycle-averaged electron ohmic heating on the electrons is stronger than the effect of the cycle-averaged electron pressure cooling on the electrons in the discharge region except in the regions near the electrodes. Therefore, the effect of the cycle-averaged electron heating on the electrons is to ＂heat＂ the electrons in the discharge region except in the regions near the electrodes. However, in the regions near the electrodes, the effect of the cycle-averaged electron heating on the electron is to ＂cool＂ the electrons. Finally, the space distributions of the electron pressure cooling the electron ohmic heating and the electron heating at 1/4 T, 2/4 T, 3/4 T, and 4/4 T in one RF-cycle are presented and compared.

Driving frequency effects on the mode transition in capacitively coupled argon discharges

A one-dimensional fluid model is employed to investigate the discharge sustaining mechanisms in the capacitively coupled argon plasmas, by modulating the driving frequency in the range of 40 kHz-613 MHz. The model incorporates the density and flux balance of electron and ion, electron energy balance, as well as Poisson＇s equation. In our simulation, the discharge experiences mode transition as the driving frequency increases, from the γ regime in which the discharge is maintained by the secondary electrons emitted from the electrodes under ion bombardment, to the a regime in which sheath oscillation is responsible for most of the electron heating in the discharge sustaining. The electron density and electron temperature at the centre of the discharge, as well as the ion flux on the electrode are figured out as a function of the driving frequency, to confirm the two regimes and transition between them. The effects of gas pressure, secondary electron emission coefficient and applied voltage on the discharge are also discussed.

The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH_4/NH_3/N_2 plasmas: Two-dimensional simulations

A two-dimensional （2D） fluid model is presented to study the behavior of silicon plasma mixed with SiH4 , N2 , and NH3 in a radio-frequency capacitively coupled plasma （CCP） reactor. The plasma–wall interaction （including the deposition） is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N2 /NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing the electron density significantly.

Influence of Discharge Parameters on Tuned Substrate Self-Bias in an Radio-Frequency Inductively Coupled Plasma

The tuned substrate self-bias in an rf inductively coupled plasma source is controlled by means of varying the impedance of an external LC network inserted between the substrate and the ground. The influencing parameters such as the substrate axial position, different coupling coils and inserted resistance are experimentally studied. To get a better understanding of the experimental results, the axial distributions of the plasma density, electron temperature and plasma potential are measured with an rf compensated Langmuir probe; the coil rf peak-to-peak voltage is measured with a high voltage probe. As in the case of changing discharge power, it is found that continuity, instability and bi-stability of the tuned substrate bias can be obtained by means of changing the substrate axial position in the plasma source or the inserted resistance. Additionally, continuity can not transit directly into bi-stability, but evolves via instability. The inductance of the coupling coil has a substantial effect on the magnitude and the property of the tuned substrate bias.

One-Dimensional Fluid Model of Pulse Modulated Radio-Frequency SiH_4 /N_2 /O_2 Discharge

Driven by pulse modulated radio-frequency plasma in capacitively coupled discharge are studied by source, the behavior of SiH4/N2/02 using a one-dimensional fluid model. Totally, 48 different species （electrons, ions, neutrals, radicals and excited species） are involved in this simulation. Time evolution of the particle densities and electron temperature with different duty cycles are obtained, as well as the electronegativity nsiH-3 /ne of the main negative ion （Sill3 ）. The results show that, by reducing the duty cycle, higher electron temperature and particle density can be achieved for the same average dissipated power, and the ion energy can also be effectively reduced, which will offer evident improvement in plasma deposition processes compared with the case of continuous wave discharge.

Mode transition induced by gas pressure in dusty acetylene microdischarges: two-dimensional simulation

Radio-frequency microdischarge in acetylene is investigated by use of a fluid model and an aerosol dynamics model in a cylindrical discharge chamber.In this article,the results at a pressure of 100–500 Torr,a voltage of 80–150 V,and an electrode gap of 400–1000μm are carefully analyzed and discussed.It is shown that two electron heating modesαandγappear in the microdischarge,and the pressure-dependent transition fromαtoγwas accompanied by the abrupt decrease of electron density and electron temperature.The mode transition phenomenon is further confirmed by the variation of the electron temperature axial profiles,the profiles vary continuously from a center high at the pressure of 100 Torr to an edge high at the pressure of500 Torr.Furthermore,in theαmode(100 Torr)the plasma density increases linearly with the increase of electrode gap,but decreases sharply with the increase of electrode gap in theγmode(>100 Torr).The gas pressure and applied voltage effects on the nanoparticle density and degree of nonuniformity are also investigated.It has been shown that the gas pressure greatly influences the axial profiles of nanoparticle density and the values of the degree of nonuniformity,while the values of the plasma parameters(electron density and nanoparticle density)strongly depend on the applied voltage.

基于电容耦合法的环网柜局部放电在线监测技术研究

环网柜绝缘放电击穿故障占比较高,供电公司每年须定期巡检检测环网柜局部放电情况,但仍然存在漏检和误判现象,为了实时了解环网柜局部放电情况,提出借助环网柜带电显示器配置的电容传感器直接从环网柜内部获取放电信息,无需安装昂贵的超高频和超声波探头;提出利用无源型网络变压器滤除幅值较高的低频信号,采用50 MHz采样频率的高速A/D和FPGA快速采集局部放电信号,基于STM32嵌入式技术开发了局部放电在线监测装置,编制了相应软件对局部放电波形和频谱进行绘制。搭建局部放电实验平台对局部放电进行了对比测试,结果表明,研制的在线监测装置对局部放电监测满足设计要求,该监测装置可替代传统带电显示器,具有安装简便的优势,对保障供电安全具有重要的意义。

基于电容耦合传递关系的局放故障定位技术研究及工程应用

本文中作者采集了多台变压器的电容耦合传递数据,并建立了对应的各部位局放信号传递关系数据表,通过能量积分方法得到各部位电容耦合传递关系函数,在理论上印证试验数据,提出一种新的超、特高压变压器局放故障诊断方法,为大型电力变压器油纸绝缘状态检(监)测和评估提供更加完善的数据补充。

大气压双频容性耦合Ar/O_(2)等离子体特性研究

文章利用二维流体模型对双频调制大气压Ar/O_(2)放电特性进行了研究,着重讨论高低频电压、低频频率等不同匹配方式对等离子体参数的影响,并且通过对电子加热模式、电子密度、中性粒子密度、正离子能量以及正离子总通量等分析了大气压Ar/O_(2)放电双频调控机制。结果表明,低频源电压的改变使得电子加热模式由α模式转变为DA/α混合模式,且等离子体密度、正离子总通量及离子能量均随着低频电压的升高而增大,发生了解耦现象。与低频源电压不同,高频源电压和低频源频率对电子加热模式不产生影响。此外,高频源电压对等离子体密度及正离子总通量影响较大,对刻蚀工业中易对材料造成损伤的离子能量影响很小;而低频源频率对工业中影响影响较大的离子能量和离子总通量影响较大,对等离子体密度影响较小,实现了等离子体密度和离子能量的独立控制。

空心电极对容性耦合等离子体放电特性影响

为了提高容性耦合等离子体源的等离子体密度,采用空心电极来代替传统平板电极进行放电。本文采用流体力学模型对容性耦合空心电极放电进行建模仿真,研究不同空心电极的孔隙结构、放电电压及极板间距下,空心电极对容性耦合等离子体放电特性,特别是对等离子体密度的影响。结果表明,采用传统平板电极放电得到的等离子体密度仅为1.86×10^(15)m^(-3);当采用倒梯形孔隙结构空心电极进行放电时,空心阴极效应被抑制,等离子体密度仅有少量增长;采用矩形或梯形孔隙结构的空心电极进行放电时,孔隙下方的等离子体密度显著提高,达到2.37×10^(15)m^(-3)以上。研究还发现,随着放电电压从50 V增至125 V,空心阴极效应和静电边缘效应都显著增强,放电中心处的电子密度从4.76×10^(14)m^(-3)迅速增加到3.98×10^(15)m^(-3),但等离子体密度在径向分布上出现两个明显的峰值,导致均匀性变差。随着极板间距的增加,等离子体密度显著提高,等离子体均匀性受扩散效应的影响得到明显改善。

电容绝缘子的场路耦合特性分析

基于电容绝缘子的电气和结构特性,首先搭建了电路模型,建立了电容参数计算模型;其次采用有限元法建立了电场仿真模型,得到绝缘子两端电压,并将其作为电场仿真模型的输入,从而建立了场路耦合模型;最后以某电容绝缘子为例,仿真分析了其正常和异常情况下的电场特性。研究结论可为电容绝缘子的劣化检测提供依据。

基于电容耦合法的环网柜局部放电在线监测技术的研究

环网柜受其使用环境潮湿、高温等影响,发生故障时,绝缘老化占70%以上。目前供电公司较多地采用人工定期巡检的方式进行故障排查,存在的问题是故障发现不及时。为此文章提出一种基于电容耦合法的环网柜局部放电在线监测技术,通过环网柜中安装的带电显示器来配置电容传感器,结合高速采样电路,直接从环网柜内部获取局部放电信息。局部放电监测受外部信号干扰小,同时还可以监测到柜内电缆接头内部的放电信息。经实际测试使用,该种方法检测准确,性价比高,易于安装,可以节省大量的人力和物力,对保障供电安全具有重要的意义。

高压交联电缆接头局部放电的电容耦合法检测及分析

为研究110kV交联电缆接内部绝缘缺陷的局部放电(partial discharge,PD)特性,设计并构造了5种典型绝缘缺陷,通过建立电缆接头局放试验研究平台,采用电容耦合法获取不同绝缘缺陷下的放电信号,构造出三维PRPD(phase resolved partial discharge)谱图表征缺陷放电状态,并采用单次放电脉冲时域波形的3、4阶特征参量萃取放电特性进行分析。研究试验结果显示,电容耦合法检测法可有效检测出电缆接头内部缺陷引起的局放,且不影响电缆接头及本体的绝缘性能;所构建的5种典型缺陷在工频电压激励下,放电脉冲序列在放电区间、放电重复率等统计特征有很大的不同,用时域波形的3、4阶特征参量所描述的放电特性也存在很大差异。这些特征可用作放电类型识别的依据。

容性耦合等离子体腔室放电特性仿真研究

容性耦合等离子体射频放电广泛应用于IC制造中的薄膜沉积、刻蚀工艺中,等离子体中的电子密度和平均电子温度直接影响离化及激发反应速率,其在放电腔室中径向分布的均匀性严重影响刻蚀和薄膜沉积的均匀性。以某12寸腔体为研究对象,采用Comsol软件仿真研究了功率电极电压、腔室气压和极板间距对等离子体的电子密度和平均电子温度的影响规律。仿真研究发现:在研究的气压、电压、极板间距范围内,电子密度和平均电子温度随电压的增加而增加,其均匀性随电压的增加而变差;电子密度随气压的增加而增加,平均电子温度随气压的增加而降低,电子密度的均匀性随气压的增加而改善,电子温度的均匀性随气压的增加先变差再变好;电子密度随极板间距的增加而增加,平均电子温度随极板的增加而降低,电子密度和平均电子温度的均匀性随极板间距的增加而变好。研究结果对指导等离子体参与的IC工艺腔室结构设计及工艺控制具有重要意义。