A new configuration of the confinement structure is utilized to improve optoelectronic performance, including threshold current, ac current gain, optical bandwidth, and optical output power of a single quantum well tr...A new configuration of the confinement structure is utilized to improve optoelectronic performance, including threshold current, ac current gain, optical bandwidth, and optical output power of a single quantum well transistor laser. Considering the drift component in addition to the diffusion term in electron current density, a new continuity equation is developed to analyze the proposed structures. Physical parameters, including electron mobility, recombination lifetime, optical confinement factor, electron capture time, and photon lifetime, are calculated for new structures. Based on solving the continuity equation in separate confinement heterostructures, the threshold current reduces 67%, the optical output power increases 37%, and the-3 d B optical bandwidth increases to 21 GHz（compared to 19.5 GHz in the original structure） when the graded index layers of AlξGa1-ξAs（ξ：0.05 → 0 in the left side of quantum well, ξ：0 → 0.02 in the right side of quantum well） are used instead of uniform Ga As in the base region.展开更多
文摘A new configuration of the confinement structure is utilized to improve optoelectronic performance, including threshold current, ac current gain, optical bandwidth, and optical output power of a single quantum well transistor laser. Considering the drift component in addition to the diffusion term in electron current density, a new continuity equation is developed to analyze the proposed structures. Physical parameters, including electron mobility, recombination lifetime, optical confinement factor, electron capture time, and photon lifetime, are calculated for new structures. Based on solving the continuity equation in separate confinement heterostructures, the threshold current reduces 67%, the optical output power increases 37%, and the-3 d B optical bandwidth increases to 21 GHz（compared to 19.5 GHz in the original structure） when the graded index layers of AlξGa1-ξAs（ξ：0.05 → 0 in the left side of quantum well, ξ：0 → 0.02 in the right side of quantum well） are used instead of uniform Ga As in the base region.
