Influence of Ti target current on microstructure and properties of Ti-doped graphite-like carbon films

Ti-doped graphite-like carbon （Ti-GLC） films were synthesized successfully by magnetron sputtering technique. The compositions, microstructures and properties of the Ti-doped GLC films dependent on the parameter of Ti target current were systemically investigated by Raman spectra, X-ray photoelectron spectroscopy （XPS）, X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscopy （AFM）, nanoindentation and ball-on-disk tribometer. With the increase of the Ti target current, the ratio of sp2 bond and the content of Ti as well as the film hardness and compressive internal stress increase, but the high content of the Ti would result in the loose film due to the formation of the squamose structure. Less incorporated Ti reduces the friction of the GLC film in dry-sliding condition, while pure GLC film exhibits the lowest friction coefficient in water-lubricated condition. Ti-GLC film deposited with low Ti target current shows high wear resistance in both dry-sliding and water-lubricated conditions.

Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm^2 and a current density of 3.2mA/cm^2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.

Enhanced field emission characteristics of thin-Au-coated nano-sheet carbon films

This paper reports that the nano-sheet carbon films （NSCFs） were fabricated on Si wafer chips with hydrogen- methane gas mixture by means of quartz-tube-type microwave plasma chemical vapour deposition （MWPCVD）. In order to further improve the field emission （FE） characteristics, a 5-nm Au film was prepared on the samples by using electron beam evaporation. The FE properties were obviously improved due to depositing Au thin film on NSCFs. The FE current density at a macroscopic electric field, E, of 9 V/μm was increased from 12.4 mA/cm2 to 27.2 mA/cm2 and the threshold field was decreased from 2.6 V/μm to 2.0 V/μm for Au-coated carbon films. A modified F-N model considering statistic effects of FE tip structures in the low E region and a space-chavge-limited-current effect in the high E region were applied successfully to explain the FE data of the Au-coated NSCF.

Influence of Microwave Power on the Properties of Hydrogenated Diamond-Like Carbon Films Prepared by ECR Plasma Enhanced DC Magnetron Sputtering

Electron cyclotron resonance （ECR） plasma was applied to enhance the direct current magnetron sputtering to prepare hydrogenated diamond-like carbon （H-DLC） films. For different microwave powers, both argon and hydrogen gas are introduced separately as the ECR working gas to investigate the influence of microwave power on the microstructure and electrical property of the H-DLC films deposited on P-type silicon substrates. A series of characterization methods including the Raman spectrum and atomic force microscopy are used. Results show that, within a certain range, the increase in microwave power affects the properties of the thin films, namely the sp3 ratio, the hardness, the nanoparticle size and the resistivity all increase while the roughness decreases with the increase in microwave power. The maximum of resistivity amounts to 1.1×10^9 Ω.cm. At the same time it is found that the influence of microwave power on the properties of H-DLC films is more pronounced when argon gas is applied as the ECR working gas, compared to hydrogen gas.

Structure and Mechanical Performance of Nitrogen Doped Diamond-like Carbon Films

Nitrogen doped diamond-like carbon （DLC：N） films were prepared by electron cyclotron resonance chemical vapor deposition （ECR-CVD） on polycrystalline Si chips. Film thickness is about 50 nm. Auger electron spectroscopy （AES） was used to evaluate nitrogen content, and increasing N2 flow improved N content from 0 to 7.6%. Raman and X-ray photoelectron spectroscopy （XPS） analysis results reveal CN-sp^3C and N-sp^2C structure. With increasing the N2 flow, sp^3C decreases from 73.74% down to 42.66%, and so does N-sp^3C from 68.04% down to 20.23%. The hardness decreases from 29.18 GPa down to 19.74 GPa, and the Young＇s modulus from 193.03 GPa down to 144.52 GPa.

Field emission characteristics of nano-sheet carbon films deposited by quartz-tube microwave plasma chemical vapour deposition

Nano-sheet carbon films are prepared on Si wafers by means of quartz-tube microwave plasma chemical vapour deposition （MPCVD） in a gas mixture of hydrogen and methane. The structure of the fabricated films is investigated by using field emission scanning electron microscope （FESEM） and Raman spectroscopy. These nano^carbon films are possessed of good field emission （FE） characteristics with a low threshold field of 2.6 V/μm and a high current density of 12.6 mA/cm^2 at an electric field of 9 V/μm. As the FE currents tend to be saturated in a high E region, no simple Fowler-Nordheim （F-N） model is applicable. A modified F N model considering statistic effects of FE tip structures and a space-charge-limited-current （SCLC） effect is applied successfully to explaining the FE data observed at low and high electric fields, respectively.

Fabrication of Diamond-like Carbon Films by Ion Assisted Middle Frequency Unbalanced Magnetron Sputtering

Diamond-like carbon （DLC） films are deposited by the Hall ion source assisted by the mid-frequency unbalanced magnetron sputtering technique. The effects of the substrate voltage bias, the substrate temperature, the Hall discharging current and the argon/nitrogen ratio on the DLC film＇s performance were studied. The experimental results show that the film＇s surface roughness, the hardness and the Young＇s modulus increase firstly and then decrease with the bias voltage incrementally increases. Also when the substrate temperature rises, the surface roughness of the film varies slightly, but its hardness and Young＇s modulus firstly increase followed by a sharp decrease when the temperature surpassing 120 ℃. With the Hall discharging current incrementally rising, the hardness and Young＇s modulus of the film decrease and the surface roughness of the film on 316L stainless steel firstly decreased and then remains constant.

Structural and mechanical properties of amorphous carbon films deposited by the dual plasma technique

Direct current metal filtered cathodic vacuum arc （FCVA） and acetylene gas （C2H2） were wielded to synthesize Ti-containing amorphous carbon films on Si （100）. The influence of substrate bias voltage and acetylene gas on the microstructure and mechanical properties of the films were investigated. The results show that the phase of TiC in the （111） preferential crystallographic orientation exists in the film,and the main existing pattern of carbon is sp2. With increasing the acetylene flow rate,the contents of Ti and TiC phase of the film gradually reduce; however,the thickness of the film increases. When the substrate bias voltage reaches -600 V,the internal stress of the film reaches 1.6 GPa. The micro-hardness and elastic modulus of the film can reach 33.9 and 237.6 GPa,respectively,and the friction coefficient of the film is 0.25.

Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon Films Deposited by Electron Cyclotron Resonance Plasma

a-C:F films are deposited by microwave electron cyclotron resonance (ECR)plasma chemical vapor deposition (CVD) using trifluoromethane (CHF3) and benzene (C6H6) as source gases at different microwave powers. The radicals in plasma originating from source gases dissociation are analyzed by relative irradiance measurement. The bonding configurations and binding state of a-C:F films are measured with Fourier-transformed infrared spectrometer (FTIR) and x-ray photoelectron spectroscopy (XPS). The results show that a-C:F films are mainly composed of CF radical at lower powers but of CF2 radical at higher powers. The deposition of films is related to the radicals generated in plasma and the main bonding configurations are dependent on the ratio of CF to CF2 radicals in films.

Deposition of Amorphous Carbon Films using ECR Plasma byVarying the Substrate Temperature

Amorphous hydrogenated carbon thin films have been deposited with benzene plasma in an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition system. The characteristic of Benzene discharge plasma has been monitored by Mast spectrometry. It shows that the majority of the plasma species in the downstream ECR Plasma with benzene as gas source are acetylene, ethylene and higher mass species. In the experiments, the effects of the substrate temperature on the deposition rates have been emphatically studied. The structures of the films were analyzed by FTIR and Ramam spectrum.The results show that when the substrate temperature rises, the deposition rate drops down, the hydrogen Foment decreases, with the higher SP3 content being presented in the film.

Irradiation Effect of γ Rays on Diamond-Like Carbon Films

Diamond like carbon films, prepared by RF glow discharge on glass substrates, were irradiated by γ rays. The as deposited and irradiated films were characterized by Raman spectroscopy, electrical resistivity, and infrared transmittance. It is shown that the irradiation of the γ rays can lead to the breaking of SP 3 C H and SP 2 C H bonds, slight increasing of SP 3 C C bonds, and induced hydrogen recombination with H 2 molecules, subsequently diffusing to the surface of the films. When the γ rays irradiation dose reached 10×10 4 Gy, the numbers of SP 3 C H bonds was decreased by about 50%, the resistivity of irradiated DLC films was increased, and the diamond like character of the films became more obvious. The structure of DLC films was modified when irradiated by γ rays. The irradiation mechanisms are briefly discussed.

Effect of Nickel Distributions Embedded in Amorphous Carbon Films on Transport Properties

Electrical properties of C/Ni films are studied using four mosaic targets made of pure graphite and stripes of nickel with the surface areas of 1.78,3.21,3.92 and 4.64%.The conductivity data in the temperature range of400-500 K shows the extended state conduction.The conductivity data in the temperature range of 150-300 K shows the multi-phonon hopping conduction.The Berthelot-type conduction dominates in the temperature range of 50-150 K.The conductivity of the films in the temperature range about 〈 50 K is described in terms of variable-range hopping conduction.In low temperatures,the localized density of state around Fermi level（F）for the film deposition with 3.92% nickel has a maximum value of about 56.2×10^（17）cm^（-3）eV^（-1） with the minimum average hopping distance of about 3.43 × 10^（-6） cm.

Ni-CONTAINING CARBON FILMS PREPARED BY RF GLOW DISCHARGE DEPOSITION

Ni-containing carbon films were prepared by rf glow discharge decomposition of methane and nickel carbonyl. The deposited des contained C, Ni, H, O and small amounts of N. Nickel existed in forms of metric Ni and Ni2O3. The oxidation of nickel mainly occurred on film surface. With lower Ni contents, the film maintained the structure of DLC film. With the increase of Ni content, the films showed some crystalline features of Ni and Ni2O3.

Relationship Between Thermal Stability and Optical Bandgap of Fluorinated Amorphous Carbon Films

Fluorinated amorphous carbon films were deposited using microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CF4 and C8H6 as source gas and were annealed in nitrogen ambience for the investigating of their thermal stability .The relative concentration of C=C bond and optical bandgap were obtained by Fourier Transform Infrared (FTIR) spectroscopy and Ultraviolet-Visible (UV-VIS ) spectrum, respectively. It has been demonstrated that there is a close relationship between relative concentration of C=C bond and optical bandgap, and the films deposited at a higher microwave power have a lower optical bandgap and a better thermal stability.

Preparation of Diamond-like Carbon Films on the Surface of Ti Alloy by Electro-deposition

In this paper, diamond-like carbon (DLC) films were deposited on Ti alloy by electro-deposition. DLC films were brown andcomposed of the compact grains whose diameter was about 400 nm. Examined by XPS, the main composition of the filmswas carbon. In the Raman spectrum, there were a broad peak at 1350 cm^(-1) and a broad peak at 1600 cm^(-1), which indicatedthat the films were DLC films.

Electron emission degradation of nano-structured sp^2-bonded amorphous carbon films

The initial field electron emission degradation behaviour of original nano-structured sp^2-bonded amorphous carbon films has been observed, which can be attributed to the increase of the work function of the film in the field emission process analysed using a Fowler-Nordheim plot. The possible reason for the change of work function is suggested to be the desorption of hydrogen from the original hydrogen termination film surface due to field emission current-induced local heating. For the explanation of the emission degradation behaviour of the nano-structured sp2-bonded amorphous carbon film, a cluster model with a series of graphite （0001） basal surfaces has been presented, and the theoretical calculations have been performed to investigate work functions of graphite （0001） surfaces with different hydrogen atom and ion chemisorption sites by using first principles method based on density functional theory-local density approximation.

STUDY OF RAY IRRADIATION ON DIAMOND-LIKE CARBON FILMS

Diamond-like carbon (DLC) films have been deposited on glass substrates usingradio-frequency (rf) plasma deposition method. Gamma -ray, ultraviolet (UV) ray were used toirradiate the DLC films. Raman spectroscopy and infrared (IR) spectroscopy were use to characterizethe changing characteristics of SP^3 C-H bond and hydrogen content in the films due to theirradiations. The results show that, the damage degrees induced by the UV ray on the SP^3 C-H bondsare much stronger than that by the gamma -ray. When the irradiation dose of gamma -ray reaches 1 OX10^4 Gy, the SP^3 C-H bond reduces about 50 percent in number. The square electrical resistance ofthe films is reduced due to the irradiation of UV ray and this is caused by severe oxidation of thefilms. By using the results on optical gap of the films and the fully constrained network theory,the hydrogen content in the as-deposited films is estimated to be l0-25at. percent.

Plasma-enhanced Deposition of Nano-Structured Carbon Films

By pre-treating substrate with different methods and patterning the catalyst, selective and patterned growth of diamond and graphitic nano-structured carbon films have been realized through DC Plasma-Enhanced Hot Filament Chemical Vapor Deposition (PE-HFCVD). Through two-step processing in an HFCVD reactor, novel nano-structured composite diamond films containing a nanocrystalline diamond layer on the top of a nanocone diamond layer have been synthesized. Well-aligned carbon nanotubes, diamond and graphitic carbon nanocones with controllable alignment orientations have been synthesized by using PE-HFCVD. The orientation of the nanostructures can be controlled by adjusting the working pressure. In a Microwave Plasma Enhanced Chemical Vapor Deposition (MW-PECVD) reactor, high-quality diamond films have been synthesized at low temperatures (310℃-550℃) without adding oxygen or halogen gas in a newly developed processing technique. In this process, carbon source originates from graphite etching, instead of hydrocarbon. The lowest growth temperature for the growth of nanocrystalline diamond films with a reasonable growth rate without addition of oxygen or halogen is 260℃.

Incorporation of Nitrogen Into Amorphous Carbon Films Produced by Surface-Wave Plasma Chemical Vapor Deposition

In order to study the influence of nitrogen incorporated into amorphous carbon films, nitrogenated amorphous carbon films have been deposited by using surface wave plasma chemical vapor deposition under various ratios of N2/CH4 gas flow. Optical emission spectroscopy has been used to monitor plasma features near the deposition zone. After deposition, the samples are checked by Raman spectroscopy and x-ray photo spectroscopy (XPS). Optical emission intensities of CH and N atom in the plasma are found to be enhanced with the increase in the N2/CH4 gas flow ratio, and then reach their maximums when the N2/CH4 gas flow ratio is 5%. A contrary variation is found in Raman spectra of deposited films. The intensity ratio of the D band to the G band (Id/Ig) and the peak positions of the G and D bands all reach their minimums when the N2/CH4 gas flow ratio is 5%. These show that the structure of amorphous carbon films has been significantly modified by introduction of nitrogen.

Effects of Deposition Temperature on the Properties of Fluorinated Amorphous Carbon Films

Fluorinated amorphous carbon films (a-C:F) were prepared at different temperatures using a microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) reactor with CHF3 and C2H2 as source gases. Films were annealed at 500℃ in vacuum ambience in order to investigate the relationship of their thermal stability, optical and electrical properties with deposition temperature. Results indicate that the films deposited at high temperature have a less CFX bonding and a more cross-linking structure thus a better thermal stability. They also have a lower bandgap, higher dielectric constant and higher leakage current.