Anomalous Emission And Carrier Effect of Fresh Porous Silicon

The emission and Fourier transformation infrared spectra of freshly prepared porous silicon(PS) and the silicon wafer were examined. Increasing temperature generally led to a decrease in the emission intensities of the PS samples, however, the freshly prepared sample showed an unusually large and sudden increase in its emission intensity at the specific temperature at which the hydrogen ion conductivity in the silicon wafer increased. The O-H vibrations of the silicon wafer also showed a sudden decrease at the same temperature. These results are consistent with the assumption that the luminescence of fresh PS comes from the carrier bound exciton in its confined nanostructure.

STUDY ON THE RELATION BETWEEN STRUCTURE AND HOT CARRIER EFFECT IMMUNITY FOR DEEP SUB-MICRON GROOVED GATE NMOSFET's

Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect deeply. Based on the hydrodynamic energytransport model, using two-dimensional device simulator Medici, the relation between structureparameters and hot carrier effect immunity for deep-sub-micron N-channel MOSFET's is studiedand compared with that of counterpart conventional planar device in this paper. The examinedstructure parameters include negative junction depth, concave corner and effective channel length.Simulation results show that grooved gate device can suppress hot carrier effect deeply even indeep sub-micron region. The studies also indicate that hot carrier effect is strongly influencedby the concave corner and channel length for grooved gate device. With the increase of concavecorner, the hot carrier effect in grooved gate MOSFET decreases sharply, and with the reducingof effective channel length, the hot carrier effect becomes large.

Switchable PLL Frequency Synthesizer andHot Carrier Effects

In this paper, a new strategy of switchable CMOS phase-locked loop frequency synthesizer is proposed to increase its tuning range. The switchable PLL which integrates two phase-locked loops with different tuning frequencies are designed and fabricated in 0.5 μm n-well CMOS process. Cadence/Spectre simulations show that the frequency range of the switchable phased-locked loop is between 320 MHz to 1.15 GHz. The experimental results show that the RMS jitter of the phase-locked loop changes from 26 ps to 123 ps as output frequency varies. For 700 MHz carrier frequency, the phase noise of the phase-locked loop reaches as low as ?81 dBc/Hz at 10 kHz offset frequency and ?104 dBc/Hz at 1 MHz offset frequency. A device degradation model due to hot carrier effects has been used to analyze the jitter and phase noise performance in an open loop voltage-controlled oscillator. The oscillation frequency of the voltage-controlled oscillator decreases by approximately 100 to 200 MHz versus the bias voltage and the RMS jitter increases by 40 ps under different phase-locked loop output frequencies after 4 hours of stress time.

Oxide Thickness Effects on n-MOSFETs Under On-State Hot-Carrier Stress

Hot carrier induced (HCI) degradation of surface channel n MOSFETs with different oxide thicknesses is investigated under maximum substrate current condition.Results show that the key parameters m and n of Hu's lifetime prediction model have a close relationship with oxide thickness.Furthermore,a linear relationship is found between m and n .Based on this result,the lifetime prediction model can be expended to the device with thinner oxides.

First-principle high-throughput calculations of carrier effective masses of two-dimensional transition metal dichalcogenides

Two-dimensional group-VIB transition metal dichalcogenides（with the formula of MX2） emerge as a family of intensely investigated semiconductors that are promising for both electronic（because of their reasonable carrier mobility） and optoelectronic（because of their direct band gap at monolayer thickness） applications. Effective mass is a crucial physical quantity determining carriers transport, and thus the performance of these applications. Here we present based on first-principles high-throughput calculations a computational study of carrier effective masses of the two-dimensional MX2 materials. Both electron and hole effective masses of different MX2（M = Mo, W and X = S, Se, Te）, including in-layer/out-of-layer components, thickness dependence, and magnitude variation in heterostructures, are systemically calculated. The numerical results, chemical trends, and the insights gained provide useful guidance for understanding the key factors controlling carrier effective masses in the MX2 system and further engineering the mass values to improve device performance.

Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs

Annular gate nMOSFETs are frequently used in spaceborne integrated circuits due to their intrinsic good capability of resisting total ionizing dose （TID） effect. However, their capability of resisting the hot carrier effect （HCE） has also been proven to be very weak. In this paper, the reason why the annular gate nMOSFETs have good TID but bad HCE resistance is discussed in detail, and an improved design to locate the source contacts only along one side of the annular gate is used to weaken the HCE degradation. The good TID and HCE hardened capability of the design are verified by the experiments for I/O and core nMOSFETs in a 0.18 μm bulk CMOS technology. In addition, the shortcoming of this design is also discussed and the TID and the HCE characteristics of the replacers （the annular source nMOSFETs） are also studied to provide a possible alternative for the designers.

Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs

Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied. The results show that the manifestations of damage caused by these two effects are quite different, though the principles of damage formation are somewhat similar. For the total dose irradiation effect, the most notable damage lies in the great increase of the off-state leakage current. As to the hot-carrier effect, most changes come from the decrease of the output characteristics curves as well as the decrease of trans-conductance. It is considered that the oxide-trapped and interface-trapped charges related to STI increase the current during irradiation, while the negative charges generated in the gate oxide, as well as the interface-trapped charges at the gate interface, cause the degradation of the hot-carrier effect. Different aspects should be considered when the device is generally hardened against these two effects.

Hot carrier effects of SOI NMOS

Hot carrier effect（HCE） is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS.Based on the chemical reaction equation of HCE degradation and a geometry dependent reaction diffusion equation,a HCE degradation model for annular NMOS and two-edged NMOS is proposed.According to this model,we conclude that the time exponent of the threshold voltage degradation depends on the configuration of the gate,and annular NMOS has more serious HCE degradation than two-edged NMOS.The design,fabrication and HCE experiments of these NMOS in a 0.5-μm PD SOI process verify the correctness of the conclusion.

Hot-carrier effects on irradiated deep submicron NMOSFET

We investigate how F exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hotcarrier stress.

Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

Two-dimensional(2D) materials have attracted extensive interest due to their excellent electrical, thermal,mechanical, and optical properties. Graphene has been one of the most explored 2D materials. However, its zero band gap has limited its applications in electronic devices. Transition metal dichalcogenide(TMDC), another kind of 2D material,has a nonzero direct band gap(same charge carrier momentum in valence and conduction band) at monolayer state,promising for the efficient switching devices(e.g., field-effect transistors). This review mainly focuses on the recent advances in charge carrier mobility and the challenges to achieve high mobility in the electronic devices based on 2DTMDC materials and also includes an introduction of 2D materials along with the synthesis techniques. Finally, this review describes the possible methodology and future prospective to enhance the charge carrier mobility for electronic devices.

Solid Lipid Nanoparticles (SLN) and Nanostructured Lipid Carriers (NLC): Occlusive Effect and Penetration Enhancement Ability

Objective: This work compares the occlusive effect and the penetration enhancement ability of solid lipid nanoparticles (SLN) and nanostructured lipid carriers (NLC), through in vitro skin. Methods: SLN and NLC were prepared by high shear homogenization and characterized by size, polydispersity index, zeta potential, morphology and physical stability. Occlusive effect was assessed by an in vitro test and by measuring TEWL using pig skin. Skin treated with the lipid carriers was visualized by SEM. A penetration test through skin, followed by tape stripping, was carried out using Nile red as a marker. Results: SLN (200 ± 6 nm) and NLC (192 ± 11 nm) were obtained. An occlusion factor of 36% - 39% was observed for both systems, while a reduction in TEWL of 34.3% ± 14.8% and 26.2% ± 6.5% was seen after treatment with SLN and NLC, respectively. SEM images showed a film formed by the lipid carriers, responsible for the occlusion observed. No differences were found between the occlusive effect produced by SLN and NLC in both tests. NLC allowed the penetration of a greater amount of Nile red than SLN: 4.7 ± 1.3 μg and 1.7 ± 0.4 μg, respectively. Conclusion: Both carriers form a film on the skin, providing an occlusive effect with no differences between these two systems. The penetration of a marker (Nile red) into the stratum corneum was quite higher for NLC than for SLN, suggesting an influence of the composition of these particles on their penetration enhancing ability.

Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content

Photoluminescence(PL) spectra of two different green InGaN/GaN multiple quantum well(MQW) samples S1 and S2,respectively with a higher growth temperature and a lower growth temperature of InGaN well layers are analyzed over a wide temperature range of 6 K-3 30 K and an excitation power range of 0.001 mW-75 mW.The excitation power-dependent PL peak energy and linewidth at 6 K show that in an initial excitation power range,the emission process of the MQW is dominated simultaneously by the combined effects of the carrier scattering and Coulomb screening for both the samples,and both the carrier scattering effect and the Coulomb screening effect are stronger for S2 than those for S1;in the highest excitation power range,the emission process of the MQWs is dominated by the filling effect of the high-energy localized states for S1,and by the Coulomb screening effect for S2.The behaviors can be attributed to the fact that sample S2 should have a higher amount of In content in the InGaN well layers than S1 because of the lower growth temperature,and this results in a stronger component fluctuation-induced potential fluctuation and a stronger well/barrier lattice mismatchinduced quantum-confined Stark effect.This explanation is also supported by other relevant measurements of the samples,such as temperature-dependent peak energy and excitation-power-dependent internal quantum efficiency.

Evaluation of effective carrier system and function on hydrocarbon accumulation in Gaoyou Sag,Subei Basin,China

Effective carrier system comprises carrier beds which transport hydrocarbons. The spatial and temporal effectiveness of carrier system is identified according to the relevance of hydrocarbon show, hydrocarbon inclusion and sealing ability of fault to hydrocarbons distribution, together with matching relation of activity history of fault and hydrocarbon generation history of source rock. On the basis of the above considerations, transporting ability of effective carrier system can be evaluated using parameters such as fluid potential, porosity and permeability, spatial coefficient of effective pathway as well as activity rate of fault. Additionally, a new concept of＂transporting threshold porosity＂ was proposed. Five styles of effective carrier systems were established in Gaoyou Sag, displaying either layered or zonal distribution characteristics, and transporting time ranges from the sedimentary time of Ezdz to early stage of sanduo uplift. Effective carrier systems can be described to be lowly-efficient and highly-efficient. Major faults （convex or steep fault plane） with activity rate greater than 20 m/Ma and structure ridges of sand layers with spatial coefficient of effective pathway greater than 25% are defined to be highly-efficient carrier beds. Hydrocarbons are concentrated around high-efficient carrier beds and E1 f traps of northern shanian area are predicted to have great potential.

Effect of Residual Charge Carrier on the Performance of a Graphene Field Effect Transistor

The temperature-dependent effect of residual charge carrier （no）, at the Dirac point, on mobility is studied. We fabricate and characterize a graphene field effect transistor （GFET） using 7nm TiO2 as the top-gate dielectric. The temperature-dependent gate voltage-drain current and room temperature gate capacitance are measured to extract the carrier mobility and to estimate the quantum capacitance of the GFET. The device shows the mobility value of gOO cm^2 /V.s at room temperature and it decreases to 45 cm^2 /V.s for 20 K due to the increase of n0. These results indicate that the phonon scattering is not the dominant process for the unevenness dielectric layer while the coulomb scattering by charged impurities degrades the device characteristically at low temperature.

Effect of Hot Carrier on Amplitude Modulation and Demodulation of Gaussian High Power Helicon Wave in Homogeneous Longitudinally Magnetized Strain Dependent Dielectric Material

In the present communication, the hydrodynamic model is used to investigate the amplitude modulation as well as demodulation of an electromagnetic wave of high power helicon pump wave into another helicon wave in strain dependent dielectric material incorporating carrier heating (CH) effects. The consideration of CH in modulation and demodulation is prime importance for the adding of new dimension in analysis of amplification of acoustic helicon wave. By using the dispersion relation, threshold pump electric filed and growth rate of unstable mode from the modulation and demodulation of the high power helicon wave well above from the threshold value will be discussed in the present analysis. The numerical analysis is applied to a strain dependent dielectric material, BaTiO3 at room temperature and irradiated with high power helicon wave of frequency 1.78 × 1014 Hz. This material is very sensitive to the pump intensities, therefore during studies, Gaussian shape of the helicon pump wave is considered during the propagation in stain dependent dielectric material and opto-acoustic wave in the form of Gaussian profile (ω0,κ0) is induced longitudinally along the crystallographic plane of BaTiO3. Its variation is caused by the available magnetic field (ωc), interaction length (z) and pulsed duration of interaction (τ). From the analysis of numerical results, the incorporation of CH effect can effectively modify the magnitude of modulation or demodulation of the amplitude of high power helicon laser wave through diffusion process. Not only the amplitude modulation and demodulation of the wave, the diffusion of the CH effectively modifies the growth rate of unstable mode of frequency in BaTiO3. The propagation of the threshold electric field shows the sinusoidal or complete Gaussian profile, whereas this profile is found to be completely lost in growth of unstable mode. It has also been seen that the growth rate is observed to be of the order of 108 - 1010 s-1 but from diffusion of carrier heating, and that its order is enhanced from 1010 - 1012 s-1 with the variation of the magnetized frequency from 1 to 2.5 × 1014 Hz.

Pressure Effects on the Charge Carrier Transportation of BaF_2 Nanocrystals

The charge transport behavior of barium fluoride nanocrystals is investigated by in situ impedance measurement up to 35 GPa. It is found that the parameters change discontinuously at about 6.9 GPa, corresponding to the phase transition of BaF2 nanocrystals under high pressure. The charge carriers in BaF2 nanocrystals include both Fions and electrons. Pressure makes the electronic transport more difficult. The defects at grains dominate the electronic transport process. Pressure could make the charge-discharge processes in the Fm3m phase more difficult.

土壤中微塑料:类型、载体效应、迁移行为和潜在风险综述

微塑料(microplastics,MPs)作为一种新兴污染物,广泛存在于土壤中,并不断迁移转化,对土壤生态系统和生物多样性产生潜在风险。为了全面评估土壤MPs的环境风险,加强MPs污染的风险管控,讨论了土壤环境中MPs的类型,系统阐述了土壤MPs的载体效应和迁移行为,并从微生物、植物、动物以及人类四个方面综述了土壤MPs的潜在风险。土壤中MPs并不是单独存在的,MPs的潜在风险一方面来自其本身(颗粒和添加剂)的生物毒性,另一方面是其对共存污染物(有机污染物、重金属和致病菌等)的载体效应。在非生物(淋溶、重力)和生物等作用下,土壤中的MPs时刻都在经历着复杂的迁移过程,从而加剧了其对土壤生态系统的影响。由于粒径小,MPs很容易进入食物链并层层传递,从而对不同营养级生物的正常生理活动产生不利影响,包括影响土壤动植物的新陈代谢,生长,发育和繁殖。此外,MPs不仅在环境中存在,而且也在人体中被发现。MPs可通过饮食、呼吸或皮肤接触等途径进入人体,从而对人体可能产生一系列不良反应。虽然目前仍没有足够的证据证明MPs对人体的直接危害,但其潜在风险仍不容忽视。探讨了土壤MPs污染治理的策略,并对未来土壤微塑料污染的研究方向和重点进行了展望。研究将有助于加深人们对土壤微塑料污染的认识,并为更好地开展微塑料的毒理效应研究和风险评估提供科学线索和理论参考。

Degradation of effective carrier-power-to-noise densityratio based on code trackingspectral sensitivitycoefficient for GNSS radio frequencycompatibilityin C band

The frequency band between 5 010 MHz and 5 030 MHz allocated as C band has been used as a candidate in the global navigation satellite systems （GNSS） along with more and more naviga- tion services in L band. The potential benefits and technical requirements of C band for satellite navi- gation have been analyzed before. However the degradation of effective carrier-power-to-noise densi- ty ratio（ A （C/No ）eu） based on code tracking spectral sensitivity coefficient（ CT_SSC ） as a compati- bility assessment methodology for potential GNSS radio frequency compatibility in C-Band has not been discussed clearly. So the compatibility of the signals in the C band between BeiDou （BD） B1 C and GPS L1C, L1C/A, Galileo E1Os as the interoperability or classical signals in L band is analyzed. Simulation results reveal the interference degree between BD III B1C and GPS L1C/A, L1C, Galileo E1OS. The results can also reveal that the multiplexed binary offset carrier （MBOC） and binary phase shift keying （BPSK） modulation is not appropriate for C band.

基于外泌体精准靶向调控肿瘤微环境的中药抗肿瘤作用研究进展

中药及复方制剂用于肿瘤治疗历史悠久,然而由于中药多成分、多靶点等特点,现有的药理研究技术尚未阐明中药抗癌药效物质及机制,限制了抗癌中药的临床应用及发展。因此,找到癌症早期临床诊断标志物及药物作用评价靶标尤为重要。外泌体是肿瘤微环境中细胞、组织、器官信息传递的主要介质之一,影响并决定肿瘤的恶性程度。本文通过对外泌体生物发生途径及功能进行综述,揭示外泌体在肿瘤微环境条件下,调控肿瘤发生发展的作用及机制,旨在阐释基于外泌体作为抗肿瘤药物载体,挖掘中药抗肿瘤药效物质,并构建“外泌体-肿瘤微环境-药效成分-作用靶点”整合分析方法,阐释中药抗肿瘤作用机制科学内涵的新思路与新方法,推动中医药在传承创新中高质量发展。

Unified Degradation Model in Low Gate Voltage Range During Hot-Carrier Stressing of p-MOS Transistors

Hot carrier effects of p MOSFETs with different oxide thicknesses are studied in low gate voltage range.All electrical parameters follow a power law relationship with stress time,but degradation slope is dependent on gate voltage.For the devices with thicker oxides,saturated drain current degradation has a close relationship with the product of gate current and electron fluence.For small dimensional devices,saturated drain current degradation has a close relationship with the electron fluence.This degradation model is valid for p MOSFETs with 0 25μm channel length and different gate oxide thicknesses.