Chelation of 188Re to compounds such as MAG3 will further reduce the radiation dose to the patient in case of balloon rupture through the rapid excretion from the body. In order to prepare highly concentrated, carrier...Chelation of 188Re to compounds such as MAG3 will further reduce the radiation dose to the patient in case of balloon rupture through the rapid excretion from the body. In order to prepare highly concentrated, carrier free 188Re-MAG3, Sbenzoyl mercaptoacetyltriglycine (S-Bz-MAG3) was synthesized, labeled with carrier free 188Re. The overall yield of S-Bz-MAG3 is higher than those published in theliterature. Dependence of the labeling yield of 1ssRe-MAG3 upon concentrations of reducing agent, pH, reaction time, etc. was examined and optimum conditions were confirmed. The concentration procedure was succeeded with Sep-Pak C18 cartridge to obtain highly concentrated 1s8Re-MAG3. In the case of optimun conditions, the labeling yield of 188Re-MAG3 was more than 98%. Radiochemical purity of 188ReMAG3 was more than 92% after 24 hour storage at room temperature.展开更多
188Re labeled monoclonal antibodies are potential candidates for use in radioimmunotherapy. S-Bz-MAG3 as a bifunctional chelating agent was used for labeling of IgG with carrier free 188Re by pre-radiolabeling of the ...188Re labeled monoclonal antibodies are potential candidates for use in radioimmunotherapy. S-Bz-MAG3 as a bifunctional chelating agent was used for labeling of IgG with carrier free 188Re by pre-radiolabeling of the chelating approach. The conjugation conditions were optimized. The stability of 188Re-MAG3-IgG in vitro was high. The results may be useful to the studies of 188Re labeled MAbs for radioimmunotherapy.展开更多
By, introducing the random and systematic errors in simulated data computed from conventional frequency-scan and laterally resolved modulated free carrier absorption theory models, we investigate the relative determin...By, introducing the random and systematic errors in simulated data computed from conventional frequency-scan and laterally resolved modulated free carrier absorption theory models, we investigate the relative determination sensitivities of three electronic transport properties, namely, carrier lifetime carrier diffusivity and front surface recombination velocity of silicon wafers determined by frequency-scan and laterally resolved techniques. The phase and amplitude data with random errors as functions of the modulation frequency at zero pump-probe-beam separation or of the two-beam separation at four different modulation frequencies are simultaneously fitted to an appreciated carrier diffusion model to extract three transport parameters. The statistical results and fitted accuracies of the transport parameter determined by both techniques are theoretically analysed. Corresponding experimental results are carried out to compare to the simulated results. The simulated and experimental results show that the determination of the transport properties of silicon wafers by the laterally resolved technique are more accurate, as compared with that by the frequency-scan technique.展开更多
In long-cavity edge-emitting diode lasers,longitudinal spatial hole burning(LSHB),two-photon ab⁃sorption(TPA)and free carrier absorption(FCA)are among the key factors that affect the linear increase in out⁃put power a...In long-cavity edge-emitting diode lasers,longitudinal spatial hole burning(LSHB),two-photon ab⁃sorption(TPA)and free carrier absorption(FCA)are among the key factors that affect the linear increase in out⁃put power at high injection currents.In this paper,a simplified numerical analysis model is proposed for 1.06μm long-cavity diode lasers by combining TPA and FCA losses with one-dimensional(1D)rate equations.The ef⁃fects of LSHB,TPA and FCA on the output characteristics are systematically analyzed,and it is proposed that ad⁃justing the front facet reflectivity and the position of the quantum well(QW)in the waveguide layer can improve the front facet output power.展开更多
基金Supported partially by Key Project of Knowledge Innvation Program of the Chinese Academy of Sciences (KJCX1-sw-08)
文摘Chelation of 188Re to compounds such as MAG3 will further reduce the radiation dose to the patient in case of balloon rupture through the rapid excretion from the body. In order to prepare highly concentrated, carrier free 188Re-MAG3, Sbenzoyl mercaptoacetyltriglycine (S-Bz-MAG3) was synthesized, labeled with carrier free 188Re. The overall yield of S-Bz-MAG3 is higher than those published in theliterature. Dependence of the labeling yield of 1ssRe-MAG3 upon concentrations of reducing agent, pH, reaction time, etc. was examined and optimum conditions were confirmed. The concentration procedure was succeeded with Sep-Pak C18 cartridge to obtain highly concentrated 1s8Re-MAG3. In the case of optimun conditions, the labeling yield of 188Re-MAG3 was more than 98%. Radiochemical purity of 188ReMAG3 was more than 92% after 24 hour storage at room temperature.
基金Supported partially by Key Project of Knowledge Innovation Program of the Chinese Academy of Sciences(KJCX1-SW-08)
文摘188Re labeled monoclonal antibodies are potential candidates for use in radioimmunotherapy. S-Bz-MAG3 as a bifunctional chelating agent was used for labeling of IgG with carrier free 188Re by pre-radiolabeling of the chelating approach. The conjugation conditions were optimized. The stability of 188Re-MAG3-IgG in vitro was high. The results may be useful to the studies of 188Re labeled MAbs for radioimmunotherapy.
基金Project supported by the Fundamental Research Funds for the Central Universities of China (Grant No. ZYGX2009J051)
文摘By, introducing the random and systematic errors in simulated data computed from conventional frequency-scan and laterally resolved modulated free carrier absorption theory models, we investigate the relative determination sensitivities of three electronic transport properties, namely, carrier lifetime carrier diffusivity and front surface recombination velocity of silicon wafers determined by frequency-scan and laterally resolved techniques. The phase and amplitude data with random errors as functions of the modulation frequency at zero pump-probe-beam separation or of the two-beam separation at four different modulation frequencies are simultaneously fitted to an appreciated carrier diffusion model to extract three transport parameters. The statistical results and fitted accuracies of the transport parameter determined by both techniques are theoretically analysed. Corresponding experimental results are carried out to compare to the simulated results. The simulated and experimental results show that the determination of the transport properties of silicon wafers by the laterally resolved technique are more accurate, as compared with that by the frequency-scan technique.
基金Supported by National Key R&D Project(2017YFB0405100)National Natural Science Foundation of China(61774024/61964007)Jilin province science and technology development plan(20190302007GX)。
文摘In long-cavity edge-emitting diode lasers,longitudinal spatial hole burning(LSHB),two-photon ab⁃sorption(TPA)and free carrier absorption(FCA)are among the key factors that affect the linear increase in out⁃put power at high injection currents.In this paper,a simplified numerical analysis model is proposed for 1.06μm long-cavity diode lasers by combining TPA and FCA losses with one-dimensional(1D)rate equations.The ef⁃fects of LSHB,TPA and FCA on the output characteristics are systematically analyzed,and it is proposed that ad⁃justing the front facet reflectivity and the position of the quantum well(QW)in the waveguide layer can improve the front facet output power.
