Regulation of the quantum barrier and carrier transport toward high-efficiency quasi-2D Dion-Jacobson tin perovskite solar cells

Quasi-2D Dion-Jacobson(DJ)tin halide perovskite has attracted much attention due to its elimination of Van der Waals gap and enhanced environmental stability.However,the bulky organic spacers usually form a natural quantum well structure,which brings a large quantum barrier and poor film quality,further limiting the carrier transport and device performance.Here,we designed three organic spacers with different chain lengths(ethylenediamine(EDA),1,3-propanediamine(PDA),and 1,4-butanediamine(BDA))to investigate the quantum barrier dependence.Theoretical and experimental characterizations indicate that EDA with short chain can reduce the lattice distortion and dielectric confinement effect,which is beneficial to the effective dissociation of excitons and the inhibition of trap-free non-radiative relaxation.In addition,EDA cation shows strong interaction with the inorganic octahedron,realizing large aggregates in precursor solution and high-quality films with improved structural stability.Furthermore,femtosecond transient absorption proves that EDA cations can also weaken the formation of small n-phases with large quantum barrier to achieve effective carrier transport between different nphases.Finally,the quasi-2D DJ(EDA)FA_(9)Sn_(10)I_(31)solar cells achieves a 7.07%power conversion efficiency with good environment stability.Therefore,this work sheds light on the regulation of the quantum barrier and carrier transport through the chain length of organic spacer for qua si-2D DJ lead-free perovskites.

Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

Interface roughness strongly influences the performance of germanium metal-organic-semiconductor field effect transistors （MOSFETs）. In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibriurn transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50 nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The 82% and 96% drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.

Effect of dimensional expansion on carrier transport behaviors of the hexagonal Bi-based perovskite crystals

All-inorganic Cs_(3)Bi_(2)I_(9)(CBI)halide perovskites are sought to be candidate for photoelectrical materials because of their low toxicity and satisfactory stability.Unfortunately,the discrete molecular[Bi2I9]3−clusters limit the charge-transport behaviors.Herein,the defect halide perovskite based on trivalent Bi^(3+)is expanded to Cs_(3)Bi_(2)I_(6)Br_(3)(CBIB).Centimeter-size CBIB single crystal(Φ15×70 mm^(3))was grown by the vertical Bridgeman method.The powder X-ray diffraction analysis shows that CBIB has structure with lattice parameters of a=b=8.223Å,c=10.024Å,α=β=90°andγ=120°.The density functional theory(DFT)calculations demonstrate that the charge density distribution was enhanced after the dimensional expansion.The enhancement of carrier transport ability of(00l)in-plane is characterized before and after dimensional improvement.The obtained CBIB(001)exhibited an electron mobility up to 40.03 cm^(2)V^(−1)s^(−1)by time-of-flight(TOF)technique,higher than 26.46 cm^(2)V^(−1)s^(−1)of CBI(001).Furthermore,the X-ray sensitivity increases from 707.81μC Gy^(−1)cm^(−2)for CBI(001)to 3194.59μC Gy−1 cm^(−2)for CBIB(001).This research will deepen our understanding of Bi-based perovskite materials and afford more promising strategies for lead-free perovskite optoelectronic devices modification.

Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors

The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p-n junction escape from quantum wells and form photoeurrent rather than relax to the ground state of the quantum wells. The photo absorption coei^cient of multiple quantum wells is also enhanced by a p-n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.

Carrier Transport Across Grain Boundaries in Polycrystalline Silicon Thin Film Transistors

We established a model for investigating polycrystalline silicon（poly-Si） thin film transistors（TFTs）.The effect of grain boundaries（GBs） on the transfer characteristics of TFT was analyzed by considering the number and the width of grain boundaries in the channel region,and the dominant transport mechanism of carrier across grain boundaries was subsequently determined.It is shown that the thermionic emission（TE） is dominant in the subthreshold operating region of TFT regardless of the number and the width of grain boundary.To a poly-Si TFT model with a 1 nm-width grain boundary,in the linear region,thermionic emission is similar to that of tunneling（TU）,however,with increasing grain boundary width and number,tunneling becomes dominant.

Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells

Carrier transport via the V-shaped pits （V-pits） in InGaN/GaN multiple-quantum-well （MQW） solar cells is numer- ically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the fiat quantum wells. As the barrier thickness of the fiat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.

Multi-carrier transport in ZrTe_5 film

Single-layered zirconium pentatelluride （ZrTes） has been predicted to be a large-gap two-dimensional （2D） topolog- ical insulator, which has attracted particular attention in topological phase transitions and potential device applications. Herein, we investigated the transport properties in ZrTe5 films as a function of thickness, ranging from a few nm to several hundred nm. We determined that the temperature of the resistivity anomaly peak （Tp） tends to increase as the thickness decreases. Moreover, at a critical thickness of ~ 40 rim, the dominating carriers in the films change from n-type to p-type. A comprehensive investigation of Shubnikov-de Hass （SdH） oscillations and Hall resistance at variable temperatures revealed a multi-carrier transport tendency in the thin films. We determined the carrier densities and mobilities of two majority car- riers using the simplified two-carrier model. The electron carriers can be attributed to the Dirac band with a non-trivial Berry phase ~, while the hole carriers may originate from surface chemical reaction or unintentional doping during the microfabrication process. It is necessary to encapsulate the ZrTe5 film in an inert or vacuum environment to potentially achieve a substantial improvement in device quality.

Pressure Effects on the Charge Carrier Transportation of BaF_2 Nanocrystals

The charge transport behavior of barium fluoride nanocrystals is investigated by in situ impedance measurement up to 35 GPa. It is found that the parameters change discontinuously at about 6.9 GPa, corresponding to the phase transition of BaF2 nanocrystals under high pressure. The charge carriers in BaF2 nanocrystals include both Fions and electrons. Pressure makes the electronic transport more difficult. The defects at grains dominate the electronic transport process. Pressure could make the charge-discharge processes in the Fm3m phase more difficult.

Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor

The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped carriers;the perturbation of electric field due to drifting carriers has been rarely reported. In this study, the effect of transient space-charge perturbation on carrier transport in a CdZnTe semiconductor is evaluated by using the laser-beam-induced current(LBIC) technique.Cusps appear in the current curves of CdZnTe detectors with different carrier transport performances under intense excitation, indicating the deformation of electric field. The current signals under different excitations are compared. The results suggest that with the increase of excitation, the amplitude of cusp increases and the electron transient time gradually decreases. The distortion in electric field is independent of carrier transport performance of detector. Transient space-charge perturbation is responsible for the pulse shape and affects the carrier transport process.

Establishing carrier transport channels based on Ti-S bonds and enhancing the photocatalytic performance of MXene quantum dots-ZnIn2S4 for ammonia

In the process of photocatalytic synthesis of ammonia,the kinetics of carrier separation and transport,adsorption of nitrogen,and activation of the N N triple bond are key factors that directly affect the efficiency of converting nitro-gen to ammonia.Here,we report a new strategy for anchoring MXene quan-tum dots(MXene QDs)onto the surface of ZnIn2S4 by forming Ti-S bonds,which provide a channel for the rapid separation and transport of charge car-riers and effectively extend the lifespan of photogenerated carriers.The unique charge distribution caused by the sulfurization of the MXene QDs further enhances the performance of the photocatalysts for the adsorption and activa-tion of nitrogen.The photocatalytic ammonia synthesis efficiency of MXene QDs-ZnIn2S4 can reach up to 360.5μmol g�1 h�1.Density functional theory calculations,various in situ techniques,and ultrafast spectroscopy are used to characterize the successful construction of Ti-S bonds and the dynamic nature of excited state charge carriers in MXene QDs-ZnIn2S4,as well as their impact on nitrogen adsorption activation and photocatalytic ammonia synthesis efficiency.This study provides a new example of how to improve nitrogen adsorp-tion and activation in photocatalytic material systems and enhance charge carrier dynamics to achieve efficient photocatalytic nitrogen conversion.

Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method

We demonstrate a two-dimensional（2D） full-band ensemble Monte-Carlo simulator for heterostructures, which deals with carrier transport in two different semiconductor materials simultaneously as well as at the boundary by solving self-consistently the 2D Poisson and Boltzmann transport equations（BTE）.The infrastructure of this simulator,including the energy bands obtained from the empirical pseudo potential method,various scattering mechanics employed,and the appropriate treatment of the carrier transport at the boundary between two different semiconductor materials,is also described.As verification and calibration,we have performed a simulation on two types of silicon-germanium（Si-Ge） heterojunctions with different doping profiles—the p-p homogeneous type and the n-p inhomogeneous type.The current-voltage characteristics are simulated,and the distributions of potential and carrier density are also plotted,which show the validity of our simulator.

Tailored Carrier Transport Path by Interpenetrating Networks in Cathode Composite for High Performance All‑Solid‑State Li‑SeS_(2) Batteries

All-solid-state Li-SeS_(2) batteries(ASSLSs)are more attractive than traditional liquid Li-ion batteries due to superior thermal stability and higher energy density.However,various factors limit the practical application of all-solid-state Li-SeS_(2) batteries,such as the low ionic conductivity of the solid-state electrolyte and the poor kinetic property of the cathode composite,resulting in unsatisfactory rate capability.Here,we employed a traditional ball milling method to design a Li_(7)P_(2.9)W_(0.05)S_(10.85) glass–ceramic electrolyte with high conductivity of 2.0 mS cm^(−1) at room temperature.In order to improve the kinetic property,an interpenetrating network strategy is proposed for rational cathode composite design.Signifcantly,the disordered cathode composite with an interpenetrating network could promote electronic and ionic conduction and intimate contacts between the electrolyte–electrode particles.Moreover,the tortuosity factor of the carrier transport channel is considerably reduced in electrode architectures,leading to superior kinetic performance.Thus,assembled ASSLS exhibited higher capacity and better rate capability than its counterpart.This work demonstrates that an interpenetrating network is essential for improving carrier transport in cathode composite for high rate all-solid-state Li-SeS_(2) batteries.

Nonlinear magneto-mechanical-thermo coupling characteristic analysis for transport behaviors of carriers in composite multiferroic piezoelectric semiconductor nanoplates with surface effect

In this paper,to better reveal the surface effect and the screening effect as well as the nonlinear multi-field coupling characteristic of the multifunctional piezoelectric semiconductor(PS)nanodevice,and to further improve its working performance,a magneto-mechanical-thermo coupling theoretical model is theoretically established for the extensional analysis of a three-layered magneto-electro-semiconductor coupling laminated nanoplate with the surface effect.Next,by using the current theoretical model,some numerical analyses and discussion about the surface effect,the corresponding critical thickness of the nanoplate,and the distributions of the physical fields(including the electron concentration perturbation,the electric potential,the electric field,the average electric displacement,the effective polarization charge density,and the total charge density)under different initial state electron concentrations,as well as their active manipulation via some external magnetic field,pre-stress,and temperature stimuli,are performed.Utilizing the nonlinear multi-field coupling effect induced by inevitable external stimuli in the device operating environment,this paper not only provides theoretical support for understanding the size-dependent tuning/controlling of carrier transport as well as its screening effect,but also assists the design of a series of multiferroic PS nanodevices.

Photoresponse and carrier transport of protocrystalline silicon multilayer films

Alternating multilayer films of hydrogen diluted hydrogenated protocrystalline silicon (pc-Si:H) were prepared using a plasma-enhanced chemical vapor deposition technique.The microstructure of the deposited films and photoresponse characteristics of their Schottky diode structures were investigated by Raman scattering spectroscopy,Fourier transform infrared spectroscopy and photocurrent spectra.Microstructure and optical absorption analyses suggest that the prepared films were pc-Si:H multilayer films with a two-phase structure of silicon nanocrystals (NCs) and its amorphous counterpart and the band gap of the films showed a decreasing trend with increasing crystalline fraction.Photocurrent measurement revealed that silicon NCs facilitate the spatial separation of photo-generated carriers,effectively reduce the non-radiative recombination rate,and induce a photoresponse peak value shift towards the short-wavelength side with increasing crystallinity.However,the carrier traps near the surface defects of silicon NCs and their spatial carrier confinement result in a significant reduction of the diode photoresponse in the longwavelength region.An enhancement of the photoresponse from 350 to 1000 nm was observed when applying an increased bias voltage in the diode,showing a favorable carrier transport and an effective collection of photo-generated carriers was achieved.Both the spatial separation of the restricted electron-hole pairs in silicon NCs and the de-trapping of the carriers at their interface defects are responsible for the red-shift in photoresponse spectra and enhancement of external quantum efficiency.The results provide fundamental data for the carrier transport control of high-efficiency pc-Si:H solar cells.

Measurement accuracy analysis of the free carrier absorption determination of the electronic transport properties of silicon wafers

By, introducing the random and systematic errors in simulated data computed from conventional frequency-scan and laterally resolved modulated free carrier absorption theory models, we investigate the relative determination sensitivities of three electronic transport properties, namely, carrier lifetime carrier diffusivity and front surface recombination velocity of silicon wafers determined by frequency-scan and laterally resolved techniques. The phase and amplitude data with random errors as functions of the modulation frequency at zero pump-probe-beam separation or of the two-beam separation at four different modulation frequencies are simultaneously fitted to an appreciated carrier diffusion model to extract three transport parameters. The statistical results and fitted accuracies of the transport parameter determined by both techniques are theoretically analysed. Corresponding experimental results are carried out to compare to the simulated results. The simulated and experimental results show that the determination of the transport properties of silicon wafers by the laterally resolved technique are more accurate, as compared with that by the frequency-scan technique.

缬氨酸的代谢途径及其在猪生产中的应用研究进展

缬氨酸是一种机体必需的支链氨基酸,在猪的生长和繁殖中是不可或缺的,具有调控蛋白质合成、葡萄糖代谢、抗氧化能力和免疫功能等生物学功能。缬氨酸在促进仔猪生长、调节母猪泌乳等方面发挥着重要作用。本文总结了缬氨酸在动物组织器官及亚细胞器中的转运载体和代谢产物、缬氨酸的生物学功能以及缬氨酸在猪不同生长阶段需要量的研究进展,旨在为其在猪生产中的应用以及低蛋白质饲粮中的适宜添加量提供参考。

Using the Hg_xMg_(1-x)Te ternary compound as a room temperature photodetector: The electronic structure, charge transport, and response function of the energetic electromagnetic radiation

In the present work, firstly, a first-principles study of the structural, electronic, and electron transport properties of the HgxMg1-xTe（HMT） ternary compound is performed using the ABINIT package and the results are compared with Cd0.9Zn0.1 Te（CZT） as a current room-temperature photodetector. Next, the response functions of Hg0.6Mg0.4Te and Cd0.9Zn0.1Te under electromagnetic irradiation with 0.05 Me V, 0.2 MeV, 0.661 MeV and 1.33 MeV energies are simulated by using the MCNP code. According to these simulations, the Hg0.6Mg0.4Te ternary compound is suggested as a good semiconductor photodetector for use at room temperature.

Isolation and functional analysis of a Brassica juncea gene encoding a com-ponent of auxin efflux carrier

Polar auxin transport plays a divergent role in plant growth and developmental processes including root and embryo development, vascular pattern formation and cell elongation. Recently isolated Arabidopsis pin gene family was believed to encode a component of auxin efflux carrier (G(?)lweiler et al, 1998). Based on the Arabidopsis pin1 sequence we have isolated a Brassica juncea cDNA (designated Bjpin1), which encoded a 70-kDa putative auxin efflux carrier. Deduced BjPIN1 shared 65% identities at protein level with AtPINl and was highly homologous to other putative PIN proteins of Arabidopsis (with highest homology to AtPIN3). Hydrophobic analysis showed similar structures between BjPINl and AtPIN proteins. Presence of 6 exons (varying in size between 65 bp and 1229 bp) and 5 introns (sizes between 89 bp and 463 bp) in the genomic fragment was revealed by comparing the genomic and cDNA sequences. Northern blot analysis indicated that Bjpin1 was expressed in most of the tissues tested, with a relatively higher level of transcript in flowers and a lower level in root tissues. Promoter-reporter gene fusion studies further revealed the expression of Bjpin1 in the mature pollen grains, young seeds, root tip, leaf vascular tissue and trace bundle, stem epidermis, cortex and vascular cells. BjPINl was localized on the plasma membrane as demonstrated through fusion expression of green fluorescent protein (GFP). Auxin efflux carrier activity was elevated in transgenic Arabidopsis expressing BjPIN1.

Dynamical study on charge injection and transport in a metal/polythiophene/metal structure

The dynamical process of charge injection from metal electrode to a nondegenerate polymer in a metal/polythiophene （PT）/metal structure has been investigated by using a nonadiabatic dynamic approach. It is found that the injected charges form wave packets due to the strong electron-lattice interaction in PT. We demonstrate that the dynamical formation of the wave packet sensitively depends on the strength of applied voltage, the electric field, and the contact between PT and electrode. At a strength of the electric field more than 3.0 × 10^4 V/cm, the carriers can be ejected from the PT into the right electrode. At an electric field more than 3.0 × 10^5 V/cm, the wave packet cannot form while it moves rapidly to the right PT/metal interface. It is shown that the ejected quantity of charge is noninteger.