Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

Interface roughness strongly influences the performance of germanium metal-organic-semiconductor field effect transistors （MOSFETs）. In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibriurn transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50 nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The 82% and 96% drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.

Effect of dimensional expansion on carrier transport behaviors of the hexagonal Bi-based perovskite crystals

All-inorganic Cs_(3)Bi_(2)I_(9)(CBI)halide perovskites are sought to be candidate for photoelectrical materials because of their low toxicity and satisfactory stability.Unfortunately,the discrete molecular[Bi2I9]3−clusters limit the charge-transport behaviors.Herein,the defect halide perovskite based on trivalent Bi^(3+)is expanded to Cs_(3)Bi_(2)I_(6)Br_(3)(CBIB).Centimeter-size CBIB single crystal(Φ15×70 mm^(3))was grown by the vertical Bridgeman method.The powder X-ray diffraction analysis shows that CBIB has structure with lattice parameters of a=b=8.223Å,c=10.024Å,α=β=90°andγ=120°.The density functional theory(DFT)calculations demonstrate that the charge density distribution was enhanced after the dimensional expansion.The enhancement of carrier transport ability of(00l)in-plane is characterized before and after dimensional improvement.The obtained CBIB(001)exhibited an electron mobility up to 40.03 cm^(2)V^(−1)s^(−1)by time-of-flight(TOF)technique,higher than 26.46 cm^(2)V^(−1)s^(−1)of CBI(001).Furthermore,the X-ray sensitivity increases from 707.81μC Gy^(−1)cm^(−2)for CBI(001)to 3194.59μC Gy−1 cm^(−2)for CBIB(001).This research will deepen our understanding of Bi-based perovskite materials and afford more promising strategies for lead-free perovskite optoelectronic devices modification.

Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors

The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p-n junction escape from quantum wells and form photoeurrent rather than relax to the ground state of the quantum wells. The photo absorption coei^cient of multiple quantum wells is also enhanced by a p-n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.

Carrier Transport Across Grain Boundaries in Polycrystalline Silicon Thin Film Transistors

We established a model for investigating polycrystalline silicon（poly-Si） thin film transistors（TFTs）.The effect of grain boundaries（GBs） on the transfer characteristics of TFT was analyzed by considering the number and the width of grain boundaries in the channel region,and the dominant transport mechanism of carrier across grain boundaries was subsequently determined.It is shown that the thermionic emission（TE） is dominant in the subthreshold operating region of TFT regardless of the number and the width of grain boundary.To a poly-Si TFT model with a 1 nm-width grain boundary,in the linear region,thermionic emission is similar to that of tunneling（TU）,however,with increasing grain boundary width and number,tunneling becomes dominant.

Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells

Carrier transport via the V-shaped pits （V-pits） in InGaN/GaN multiple-quantum-well （MQW） solar cells is numer- ically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the fiat quantum wells. As the barrier thickness of the fiat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.

Multi-carrier transport in ZrTe_5 film

Single-layered zirconium pentatelluride （ZrTes） has been predicted to be a large-gap two-dimensional （2D） topolog- ical insulator, which has attracted particular attention in topological phase transitions and potential device applications. Herein, we investigated the transport properties in ZrTe5 films as a function of thickness, ranging from a few nm to several hundred nm. We determined that the temperature of the resistivity anomaly peak （Tp） tends to increase as the thickness decreases. Moreover, at a critical thickness of ~ 40 rim, the dominating carriers in the films change from n-type to p-type. A comprehensive investigation of Shubnikov-de Hass （SdH） oscillations and Hall resistance at variable temperatures revealed a multi-carrier transport tendency in the thin films. We determined the carrier densities and mobilities of two majority car- riers using the simplified two-carrier model. The electron carriers can be attributed to the Dirac band with a non-trivial Berry phase ~, while the hole carriers may originate from surface chemical reaction or unintentional doping during the microfabrication process. It is necessary to encapsulate the ZrTe5 film in an inert or vacuum environment to potentially achieve a substantial improvement in device quality.

Pressure Effects on the Charge Carrier Transportation of BaF_2 Nanocrystals

The charge transport behavior of barium fluoride nanocrystals is investigated by in situ impedance measurement up to 35 GPa. It is found that the parameters change discontinuously at about 6.9 GPa, corresponding to the phase transition of BaF2 nanocrystals under high pressure. The charge carriers in BaF2 nanocrystals include both Fions and electrons. Pressure makes the electronic transport more difficult. The defects at grains dominate the electronic transport process. Pressure could make the charge-discharge processes in the Fm3m phase more difficult.

Effect of transient space-charge perturbation on carrier transport in high-resistance CdZnTe semiconductor

The polarization effect introduced by electric field deformation is the most important bottleneck of CdZnTe detector in x-ray imaging. Currently, most of studies focus on electric field deformation caused by trapped carriers;the perturbation of electric field due to drifting carriers has been rarely reported. In this study, the effect of transient space-charge perturbation on carrier transport in a CdZnTe semiconductor is evaluated by using the laser-beam-induced current(LBIC) technique.Cusps appear in the current curves of CdZnTe detectors with different carrier transport performances under intense excitation, indicating the deformation of electric field. The current signals under different excitations are compared. The results suggest that with the increase of excitation, the amplitude of cusp increases and the electron transient time gradually decreases. The distortion in electric field is independent of carrier transport performance of detector. Transient space-charge perturbation is responsible for the pulse shape and affects the carrier transport process.

Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method

We demonstrate a two-dimensional（2D） full-band ensemble Monte-Carlo simulator for heterostructures, which deals with carrier transport in two different semiconductor materials simultaneously as well as at the boundary by solving self-consistently the 2D Poisson and Boltzmann transport equations（BTE）.The infrastructure of this simulator,including the energy bands obtained from the empirical pseudo potential method,various scattering mechanics employed,and the appropriate treatment of the carrier transport at the boundary between two different semiconductor materials,is also described.As verification and calibration,we have performed a simulation on two types of silicon-germanium（Si-Ge） heterojunctions with different doping profiles—the p-p homogeneous type and the n-p inhomogeneous type.The current-voltage characteristics are simulated,and the distributions of potential and carrier density are also plotted,which show the validity of our simulator.

Tailored Carrier Transport Path by Interpenetrating Networks in Cathode Composite for High Performance All‑Solid‑State Li‑SeS_(2) Batteries

All-solid-state Li-SeS_(2) batteries(ASSLSs)are more attractive than traditional liquid Li-ion batteries due to superior thermal stability and higher energy density.However,various factors limit the practical application of all-solid-state Li-SeS_(2) batteries,such as the low ionic conductivity of the solid-state electrolyte and the poor kinetic property of the cathode composite,resulting in unsatisfactory rate capability.Here,we employed a traditional ball milling method to design a Li_(7)P_(2.9)W_(0.05)S_(10.85) glass–ceramic electrolyte with high conductivity of 2.0 mS cm^(−1) at room temperature.In order to improve the kinetic property,an interpenetrating network strategy is proposed for rational cathode composite design.Signifcantly,the disordered cathode composite with an interpenetrating network could promote electronic and ionic conduction and intimate contacts between the electrolyte–electrode particles.Moreover,the tortuosity factor of the carrier transport channel is considerably reduced in electrode architectures,leading to superior kinetic performance.Thus,assembled ASSLS exhibited higher capacity and better rate capability than its counterpart.This work demonstrates that an interpenetrating network is essential for improving carrier transport in cathode composite for high rate all-solid-state Li-SeS_(2) batteries.

Nonlinear magneto-mechanical-thermo coupling characteristic analysis for transport behaviors of carriers in composite multiferroic piezoelectric semiconductor nanoplates with surface effect

In this paper,to better reveal the surface effect and the screening effect as well as the nonlinear multi-field coupling characteristic of the multifunctional piezoelectric semiconductor(PS)nanodevice,and to further improve its working performance,a magneto-mechanical-thermo coupling theoretical model is theoretically established for the extensional analysis of a three-layered magneto-electro-semiconductor coupling laminated nanoplate with the surface effect.Next,by using the current theoretical model,some numerical analyses and discussion about the surface effect,the corresponding critical thickness of the nanoplate,and the distributions of the physical fields(including the electron concentration perturbation,the electric potential,the electric field,the average electric displacement,the effective polarization charge density,and the total charge density)under different initial state electron concentrations,as well as their active manipulation via some external magnetic field,pre-stress,and temperature stimuli,are performed.Utilizing the nonlinear multi-field coupling effect induced by inevitable external stimuli in the device operating environment,this paper not only provides theoretical support for understanding the size-dependent tuning/controlling of carrier transport as well as its screening effect,but also assists the design of a series of multiferroic PS nanodevices.

Photoresponse and carrier transport of protocrystalline silicon multilayer films

Alternating multilayer films of hydrogen diluted hydrogenated protocrystalline silicon (pc-Si:H) were prepared using a plasma-enhanced chemical vapor deposition technique.The microstructure of the deposited films and photoresponse characteristics of their Schottky diode structures were investigated by Raman scattering spectroscopy,Fourier transform infrared spectroscopy and photocurrent spectra.Microstructure and optical absorption analyses suggest that the prepared films were pc-Si:H multilayer films with a two-phase structure of silicon nanocrystals (NCs) and its amorphous counterpart and the band gap of the films showed a decreasing trend with increasing crystalline fraction.Photocurrent measurement revealed that silicon NCs facilitate the spatial separation of photo-generated carriers,effectively reduce the non-radiative recombination rate,and induce a photoresponse peak value shift towards the short-wavelength side with increasing crystallinity.However,the carrier traps near the surface defects of silicon NCs and their spatial carrier confinement result in a significant reduction of the diode photoresponse in the longwavelength region.An enhancement of the photoresponse from 350 to 1000 nm was observed when applying an increased bias voltage in the diode,showing a favorable carrier transport and an effective collection of photo-generated carriers was achieved.Both the spatial separation of the restricted electron-hole pairs in silicon NCs and the de-trapping of the carriers at their interface defects are responsible for the red-shift in photoresponse spectra and enhancement of external quantum efficiency.The results provide fundamental data for the carrier transport control of high-efficiency pc-Si:H solar cells.

Measurement accuracy analysis of the free carrier absorption determination of the electronic transport properties of silicon wafers

By, introducing the random and systematic errors in simulated data computed from conventional frequency-scan and laterally resolved modulated free carrier absorption theory models, we investigate the relative determination sensitivities of three electronic transport properties, namely, carrier lifetime carrier diffusivity and front surface recombination velocity of silicon wafers determined by frequency-scan and laterally resolved techniques. The phase and amplitude data with random errors as functions of the modulation frequency at zero pump-probe-beam separation or of the two-beam separation at four different modulation frequencies are simultaneously fitted to an appreciated carrier diffusion model to extract three transport parameters. The statistical results and fitted accuracies of the transport parameter determined by both techniques are theoretically analysed. Corresponding experimental results are carried out to compare to the simulated results. The simulated and experimental results show that the determination of the transport properties of silicon wafers by the laterally resolved technique are more accurate, as compared with that by the frequency-scan technique.

BaTiO_(3)掺杂调控内建电场提升钙钛矿太阳能电池性能

碳基无空穴传输层钙钛矿太阳能电池(C-PSCs)因其替换了昂贵的贵金属电极,以及去掉了稳定性差的空穴传输材料而受到广泛关注.但是C-PSCs内部载流子分离和传输性能差阻碍了效率的提高,而内建电场的增强可以改善载流子传输性能从而提升电池光电性能.本文将铁电材料钕酸钡(BaTiO_(3))粉末作为添加剂引入钙钛矿前驱液中制备C-PSCs,改善钙钛矿薄膜形态,降低薄膜缺陷密度及提高C-PSCs载流子传输性能.结果表明,当BaTiO_(3)质量分数为1.0%时,钙钛矿薄膜均匀致密,电池的光电转换效率最高.对薄膜施加正向电压极化处理后,铁电材料BaTiO_(3)剩余极化电场增大了内建电场,为载流子输运和萃取提供充足的动力,从而抑制非辐射复合的发生;同时耗尽层宽度增大,反向饱和电流减小,电池性能显著提升,优化后最佳器件效率为9.02%.本文为钙钛矿吸收层掺杂实现内建电场调控提供了一种有效策略.

谷氨酰胺营养生理功能及载体转运系统进展分析

谷氨酰胺是一种重要的氨基酸,在动物体内广泛存在,多为非必需型氨基酸,但是谷氨酰胺具有重要的营养生理功能,为动物医学研究提供了多个方向,因此成为了相关科学研究的热点之一。谷氨酰胺的相关研究逐渐增多,但是仍需进一步探明其营养生理功能,并分析其载体转运系统,从而为相关动物学研究提供一定参考资料。该文对该氨基酸的营养生理功能进行分析,并对其载体转移系统的研究情况进行综述分析。

观赏植物糖转运蛋白研究进展

观赏植物因其花、叶、果实等具有良好的观赏价值而在环境美化中得到广泛应用。糖转运蛋白在观赏植物生长发育、开花结实以及逆境胁迫响应等方面发挥重要作用,因此,研究糖转运蛋白对观赏植物产生的影响具重要意义。单糖转运蛋白、蔗糖转运蛋白和糖外排转运蛋白是目前植物中发现的3大类糖转运蛋白。本文对这3类糖转运蛋白成员的分类及基本特性进行了比较和讨论,重点介绍了观赏植物中糖转运蛋白功能和调控的最新研究进展,以期为今后利用基因工程技术改良观赏植物并提高其观赏性及适应性提供理论依据。

有机液体载氢储运技术研究进展及应用场景

在“双碳”战略目标背景下,氢能产业在深度和广度上都获得了高速发展,上游制氢资源丰富,下游用氢市场广阔,由于跨地区氢能供需失衡,中游氢能储运已经成为氢能产业链的短板,严重制约了氢能产业的进一步发展。在这种情况下,有机液体载氢(LOHC)储运技术应运而生,以一种化学储氢方式完美克服了高压气态储氢、低温液态及固态等物理储氢方式的缺陷。与其他氢能储运技术相比,LOHC储运技术在安全、成本、技术、效率等方面具有突出的优势,有望补齐氢能储运的短板,完善氢能产业链。本文对三种主要LOHC储运技术,从工艺原理、储氢载体、综合成本、科研发展等方面进行比较分析。认为甲苯、N-乙基咔唑和二苄基甲苯等三种LOHC储运技术已完成了理论研究、实验验证及中试放大等工作,技术趋于完善,具备了工业化推广应用的条件。在未来展望角度上,对包括大型氢能储运基地和分布式脱氢加氢一体化站在内的两种LOHC储运技术的新型应用场景进行了分析,并梳理了目前LOHC储运技术研究面临的问题和研究方向,并提出了希望和建议。

日粮精粗比对舍饲育肥牦牛瘤胃菌群结构、挥发性脂肪酸及其转运载体表达量的影响

[目的]本试验以舍饲育肥牦牛为研究对象,探究日粮精粗比对舍饲育肥牦牛瘤胃代谢的影响,期望为青海牦牛规模化、产业化和现代化养殖过程中日粮精粗比调控提供参考。[方法]对15头试验牛群进行分组,分别饲喂精粗(质量)比为3∶7(A组)、5∶5(B组)、7∶3(C组)的全混合日粮(total mixed ration,TMR)。饲喂90 d后于凌晨空腹屠宰,采集瘤胃液和瘤胃上皮组织,通过16S核糖体RNA(16S ribosomal RNA,16S rRNA)高通量测序、气相色谱、RT-qPCR以及Western blot试验方法,探究不同精粗比日粮饲喂下,舍饲育肥牦牛瘤胃细菌菌群结构、瘤胃发酵参数以及瘤胃上皮中挥发性脂肪酸(VFA)转运载体表达量的变化。[结果]日粮精粗比显著影响瘤胃细菌菌群结构,随着精料占比升高,在门水平上,拟杆菌门(Bacteroidetes)、螺旋体门(Spirochaetes)和黏胶球形菌门(Lentisphaerae)相对丰度显著上升(P<0.05),厚壁菌门(Firmicutes)和软壁菌门(Tenericutes)相对丰度显著下降(P<0.05);属水平上,随着精料比例提高,理研菌科RC9肠道群(Rikenellaceae RC9 gut group)、克里斯腾森菌科R7群(Christensenellaceae R7 group)、Saccharofermentans、产琥珀酸菌属(Succiniclasticum)和Lachnoclostridium相对丰度显著升高(P<0.05),C组牦牛瘤胃球菌属(Ruminococcus)和拟杆菌属(Bacteroides)相对丰度显著低于A组(P<0.05),B组和C组牦牛普氏菌属(Prevotella)、假丁酸弧菌(Pseudobutyrivibrio)和密螺旋体属(Treponema)相对丰度显著高于A组(P<0.05)。日粮精粗比对瘤胃pH值及VFA产量影响显著,精粗比上升显著下调瘤胃内容物pH值(P<0.05),乙酸浓度、乙酸浓度/丙酸浓度显著降低(P<0.05),丙酸、戊酸和总VFA浓度显著升高(P<0.05),与A、B组相比,C组丁酸和异丁酸浓度显著升高(P<0.05)。日粮精粗比对瘤胃上皮VFA转运载体表达量影响显著。随着日粮精料比例升高,腺瘤下调蛋白基因(DRA)、假定阴离子转运载体1基因(PAT1)、单羧酸转运载体1基因(MCT1)和单羧酸转运载体4基因(MCT4)在mRNA水平的相对表达量显著升高(P<0.05),而阴离子交换蛋白2基因(AE2)在mRNA水平和蛋白水平的相对表达量则显著下降(P<0.05),上述基因的蛋白表达趋势与mRNA的一致。随着日粮精粗比例升高,牦牛的生产性能,即平均日增重、饲料转化率、屠宰率也随之提高,且具有显著差异(P<0.05)。[结论]饲喂高精料日粮可提升牦牛瘤胃中非纤维素降解菌的相对丰度,使大量能量饲料和蛋白饲料快速转化为VFA,为机体供能。激活瘤胃上皮细胞中VFA转运载体,提高其表达量,加快VFA转运入血的速度,以提高脂肪代谢底物,最终达到快速育肥的效果。