Production of a large area diffuse arc plasma with multiple cathode

An arc channel at atmospheric pressure tends to shrink generally. In this paper, a non-transferred DC arc plasma device with multiple cathode is introduced to produce a large area arc plasma at atmospheric pressure. This device is comprised of a 42-mm diameter tubular chamber, multiple cathode which is radially inserted into the chamber, and a tungsten anode with a nozzle in its center. In argon/helium atmosphere, a large area and circumferential homogenous diffuse arc plasma, which fills the entire cross section surrounded by the cathode tips, is observed. Results show that the uniformity and stability of diffuse arc plasma are strongly related to the plasma forming gas. Based on these experimental results, an explanation to the arc diffusion is suggested. Moreover, the electron excitation temperature and electron density measured in diffuse helium plasma are much lower than those of constricted arc column, which indicates the diffuse helium plasma probably deviates from the local thermodynamic equilibrium state. Unlike the common non-transferred arc plasma devices, this device can provide a condition for axial-fed feedstock particles. The plasma device is attempted to spheroidize alumina powders by using the central axis to send the powder. Results show that the powder produced is usually a typical hollow sphere.

THE EFFECTS OF NEGATIVE BIAS AND FLUX RATIO ON THE PROPERTIES OF TiN THIN FILMS FORMED BY FILTERED CATHODIC ARC PLASMA TECHNIQUE

The filtered cathodic vacuum-arc (FCVA) technique is a supplementary and alterna tive technique with respect to convendtional physical and chemical vapour deposi tion which can remove macro-particles effectively and make the deposition proces s at ambient temperature. In this work, high quality TiN thin films were deposi ted on silicon substrates at low temperature using the improved filtered cathodi c arc plasma (FCAP) technique. AFM, XRD, TEM were employed to characterize the T iN thin films. The effects of the negative substrate bias on the grain size, pre ferred crystalline orientation, surface roughness of TiN thin films were discuss ed.

Influences of Bias Voltage and Target Current on Structure,Microhardness and Friction Coefficient of Multilayered TiAlN/CrN Coatings Synthesized by Cathodic Arc Plasma Deposition

Multilayered TiAlN/CrN coatings have been synthesized on stainless steel substrates by cathodic arc plasma deposition using TiAl and Cr targets.Influences of the bias voltage,cathode current ratio ITiAl/ICr,and deposition pressure on the hardness and friction coefficient of the coatings were investigated.The measurement revealed existence of two cubic phases,face-centercubic （Cr,Al）N and（Ti,Al）N,in the coatings deposited under various bias voltages except for the coating deposited at -400 V,which is amorphous.The hardness of the coatings was strongly dependent on the Itial/Icr ratio and deposition pressure,and reached a maximum of 33 GPa at an ITiAI/ICr ratio of 1.0 and a pressure of 1.0 Pa.The incorporation of the element chromium can reduce the density of pinholes in the coatings and assist the optimization of deposition conditions for high quality TiAlN/CrN coatings.

Development and experimental study of large size composite plasma immersion ion implantation device

Plasma immersion ion implantation （PI） overcomes the direct exposure limit of traditional beam- line ion implantation, and is suitable for the treatment of complex work-piece with large size. Pm technology is often used for surface modification of metal, plastics and ceramics. Based on the requirement of surface modification of large size insulating material, a composite full-directional PHI device based on RF plasma source and metal plasma source is developed in this paper. This device can not only realize gas ion implantation, but also can realize metal ion implantation, and can also realize gas ion mixing with metal ions injection. This device has two metal plasma sources and each metal source contains three cathodes. Under the condition of keeping the vacuum unchanged, the cathode can be switched freely. The volume of the vacuum chamber is about 0.94 m3, and maximum vacuum degree is about 5 x10-4 Pa. The density of RF plasma in homogeneous region is about 109 cm-3, and plasma density in the ion implantation region is about 101x cm-3. This device can be used for large-size sample material PHI treatment, the maximum size of the sample diameter up to 400 mm. The experimental results show that the plasma discharge in the device is stable and can run for a long time. It is suitable for surface treatment of insulating materials.

Parametric Study on Arc Behavior of Magnetically Diffused Arc

A model coupling the plasma with a cathode body is applied in the simulation of the diffuse state of a magnetically rotating arc.Four parametric studies are performed：on the external axial magnetic field（AMF）,on the cathode shape,on the total current and on the inlet gas velocity.The numerical results show that：the cathode attachment focuses in the center of the cathode tip with zero AMF and gradually shifts off the axis with the increase of AMF;a larger cathode conical angle corresponds to a cathode arc attachment farther away off axis;the maximum values of plasma temperature increase with the total current;the plasma column in front of the cathode tip expands more severely in the axial direction,with a higher inlet speed;the cathode arc attachment shrinks towards the tip as the inlet speed increases.The various results are supposed to be explained by the joint effect of coupled cathode surface heating and plasma rotating flow.

Effect of Annealing Temperature on CrN Microspheres Synthesized by CAP Technology

CrN microspheres were synthesized by using a cathodic arc plasma source system. The obtained samples were annealed in air at temperatures of 300-800 ℃ for 60 min. The influence of annealing temperature on the microstructure and surface morphology of the CrN microspheres was investigated. The CrN microspheres were characterized by means of scanning electron microscopy, transmission electron microscopy and X-ray diffraction analysis. The results show that the CrN nanoparticles arranged into leaf-like structures before annealing. With the rising of the annealing temperature, the size of CrN crystal nanoparticals became larger. When the annealing temperature exceeded the oxidation point（500 ℃）, the CrN was oxidized and the leaf-like structure was broken. With further increase of the annealing temperature（700 ℃）, the arrangement of CrN nanoparticles was changed from leaf-like structure to be discrete.