Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs

The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.

Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.

Beauty-charm meson family with coupled channel effects and their strong decays

We systematically examined the mass spectra and their two-body hadronic decays of the beauty-charm meson family considering coupled channel effects.Our results can effectively explain the observed Bemeson spectrum,and the prediction of the mass spectrum for unobserved beauty-charm mesons can be tested in future experiments.Compared with previous studies,we systematically examine the beauty-charm meson family within the coupled channel components.The 1S state in beauty-charm meson family has few percent of coupled channel component,while the 2S,1P,and 1D states have more than ten percent of coupled channel component.The two-body hadronic decay widths of the 2^(3)P_(2) state is as narrow as 3 MeV.The two-body hadronic decay widths of 3^(1)S_(0),3^(3)S_(1),2^(3)D_(1),2D,2D',and 2^(3)D_(3) are approximately 109,67,60,57,201,and 76 MeV,respectively.Furthermore,the mixing effects between B_(c)(n^(3)L_(L))and B_(c)(n^(1)L_(L))states are discussed.

High-speed and high-performance polarization-based quantum key distribution system without side channel effects caused by multiple lasers

Side channel effects such as temporal disparity and intensity fluctuation of the photon pulses caused by random bit generation with multiple laser diodes in high-speed polarization-based BB84 quantum key distribution(QKD) systems can be eliminated by increasing the DC bias current condition. However, background photons caused by the spontaneous emission process under high DC bias current degrade the performance of QKD systems. In this study, we investigated the effects of spontaneously emitted photons on the system performance in a high-speed QKD system at a clock rate of 400 MHz. Also, we show further improvements in the system performance without side channel effects by utilizing the temporal filtering technique with real-time fieldprogrammable gate array signal processing.

GeSi Source/Drain Structure for Suppression of Short Channel Effect in SOI p-MOSFET's

GeSi source/drain structure is purposefully adopted in SOI p MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold voltage rolling off and DIBL effect is thoroughly investigated,as well as the influence of the Ge concentration and silicon film thickness.The Ge concentration should be carefully chosen as a tradeoff between the driving current and SCE improvement.The detailed physics is explained.

Performance optimization of tri-gate junctionless FinFET using channel stack engineering for digital and analog/RF design

This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale region using SiGe material for the channel.For the analysis,three different channel structures are used:(a)tri-layer stack channel(TLSC)(Si-SiGe-Si),(b)double layer stack channel(DLSC)(SiGe-Si),(c)single layer channel(SLC)(S_(i)).The I−V characteristics,subthreshold swing(SS),drain-induced barrier lowering(DIBL),threshold voltage(V_(t)),drain current(ION),OFF current(IOFF),and ON-OFF current ratio(ION/IOFF)are observed for the structures at a 20 nm gate length.It is seen that TLSC provides 21.3%and 14.3%more ON current than DLSC and SLC,respectively.The paper also explores the analog and RF factors such as input transconductance(g_(m)),output transconductance(gds),gain(gm/gds),transconductance generation factor(TGF),cut-off frequency(f_(T)),maximum oscillation frequency(f_(max)),gain frequency product(GFP)and linearity performance parameters such as second and third-order harmonics(g_(m2),g_(m3)),voltage intercept points(VIP_(2),VIP_(3))and 1-dB compression points for the three structures.The results show that the TLSC has a high analog performance due to more gm and provides 16.3%,48.4%more gain than SLC and DLSC,respectively and it also provides better linearity.All the results are obtained using the VisualTCAD tool.

A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.

A Study on The Multi-Antenna Geometrical Depolarization Channel Modeling

The traditional geometrical depolarization model that single transmitter to single receiver provides a simple method of polarization channel modeling. It can obtain the geometrical depolarization effect of each path if known the antenna configuration, the polarization field radiation pattern and the spatial distribution of scatters. With the development of communication technology, information transmission spectrum is more and more scarce. The original model provides only a single channel polarization state, so the information will be limited that the polarization state carries in the polarization modulation. The research is so significance that how to carries polarization modulation information by using multi-antenna polarization state. However, the present study shows that have no depolarization effect model for multi-antenna systems. In this paper, we propose a multi-antenna geometrical depolarization model. On the basis of a single antenna to calculate the depolarization effect of the model, and through simulation to analysis the main factors that influence the depolarization effect. This article provides a multi-antenna geometrical depolarization channel modeling that can applied to large-scale array antenna, and to some extent increase the speed of information transmission.

Channel effect of the modified powdery mixture of ammonium nitrate and fuel oil

The modified powdery mixture of ammonium nitrate and fuel oil （MPANFO） is a new breed of industrial explosives developed years ago in China. As one of the important properties of an industrial explosive, the channel effect of MPANFO was reported in this paper. A series of experiments were conducted to determine the channel effect of MPANFO. The blasthole diameter range was estimated to avoid the channel effect of MPANFO. Three empirical formulae for predicting the detonation length of MPANFO were provided in terms of the channel effect. Experiments and theoretical analysis indicate that the channel effect of MPANFO is very serious. The reason why the channel effect of MPANFO is worse than that of other industrial explosives is explained at a theoretical level. In addition, some properties of MPANFO, such as sympathetic distance, detonation velocity and brisance, are determined.

A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack(TMGS) DG-MOSFET

In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.

Effective Channel Length Degradation under Hot-Carrier Stressing

This article describes the effective channel length degradation under hot carrier stressing. The extraction is based on the IDs-Vcs characteristics by maximum transconductance （maximum slope of IDs ＆ VGS） in the linear region. The transconductance characteristics are determine for the several devices of difference drawn channel length. The effective channel length of submicron LDD （Lightly Doped Drain） NMOSFETs （Metal Oxide Semiconductor Field Effect Transistor） under hot carrier stressing was measured at the stress time varying from zero to 10,000 seconds. It is shown that the effective channel length was increased with time. This is caused by charges trapping in the oxide during stress. The increased of effective channel length （△Leff） is seem to be increased sharply as the gate channel length is decrease.

Conjugated microporous polymers-scaffolded enzyme cascade systems with enhanced catalytic activity

Enhancing catalytic activity of multi-enzyme in vitro through substrate channeling effect is promis-ing yet challenging.Herein,conjugated microporous polymers(CMPs)-scaffolded integrated en-zyme cascade systems(I-ECSs)are constructed through co-entrapping glucose oxidase(GOx)and horseradish peroxidase(HRP),in which hydrogen peroxide(H_(2)O_(2)) is the intermediate product.The interplay of low-resistance mass transfer pathway and appropriate pore wall-H_(2)O_(2) interactions facilitates the directed transfer of H_(2)O_(2),resulting in 2.4-fold and 5.0-fold elevation in catalytic activ-ity compared to free ECSs and separated ECSs,respectively.The substrate channeling effect could be regulated by altering the mass ratio of GOx to HRP.Besides,I-ECSs demonstrate excellent stabili-ties in harsh environments and multiple recycling.

3-D Simulation of FINFET

An SOI MOSFET with FINFET structure is simulated using a 3 D simulator. I V characteristics and sub threshold characteristics,as well as the short channel effect(SCE) are carefully investigated.SCE can be well controlled by reducing fin height.Good performance can be achieved with thin height,so fin height is considered as a key parameter in device design.Simulation results show that FINFETs present performance superior to conventional single gate devices.

The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs

Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.

Comparative Methodical Assessment of Established MOSFET Threshold Voltage Extraction Methods at 10-nm Technology Node

Threshold voltage (VTH) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise VTH value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of VTH diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent VTH extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.

Effects of entrance channel on fusion probability in hot fusion reactions

Within the framework of the dinuclear system （DNS） model, the fusion reactions leading to the compound nuclei 274Hs＊ and 2S6Cn＊ are investigated. The fusion probability as a function of DNS excitation energy is studied. The calculated results are in good agreement with the available experimental data. The obtained results show that the fusion probabilities are obviously enhanced for the reactions located at high place in potential energy surface, although these reactions may have small values of mass asymmetry. It is found that the enhancement is due to the large potential energy of the initial DNS.

Physical Parameter Variation Analysis on the Performance Characteristics of Nano DG-MOSFETs

DG-MOSFETs are the most widely explored device architectures for nano-scale CMOS circuit design in sub-50 nm due to the improved subthreshold slope and the reduced leakage power compared to bulk MOSFETs. In thin-film (tsi < 10 nm) DG-MOS structures, charge carriers are affected by tsi- induced quantum confinement along with the confinement caused by a very high electric field at the interface. Therefore, quantum confinement effects on the device characteristics are also quite important and it needs to be incorporated along with short channel effects for nano-scale circuit design. In this paper, we analyzed a DG-MOSFET structure at the 20 nm technology node incorporating quantum confinement effects and various short channel effects. The effect of physical parameter variations on performance characteristics of the device such as threshold voltage, subthreshold slope, ION - IOFF ratio, DIBL, etc. has been investigated and plotted through extensive TCAD simulations. The physical parameters considered in this paper are operating temperature (Top), channel doping concentration (Nc), gate oxide thickness (tox) and Silicon film thickness (tsi). It was observed that quantum confinement of charge carriers significantly affected the performance characteristics (mostly the subthreshold characteristics) of the device and therefore, it cannot be ignored in the subthreshold region-based circuit design like in many previous research works. The ATLASTM device simulator has been used in this paper to perform simulation and parameter extraction. The TCAD analysis presented in the manuscript can be incorporated for device modeling and device matching. It can be used to illustrate exact device behavior and for proper device control.

Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor （CMOS）-based device in a nanoscale regime.

Subthreshold behavior of AlInSb/InSb high electron mobility transistors

We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Φdeff,minand the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.

Pore structure characteristics of the relative water-resisting layer on the top of the Ordovician in Longgu Coal Mine

In order to study the permeability and water-resisting ability of the strata on the top of the Ordovician in Longgu Coal Mine, this paper tested the permeability and porosity of the strata, investigated the fracture and pore structure features of the strata, and identified the main channels which govern the permeability and water-resisting ability of the strata. The permeability of the upper, central and lower strata shows as 2.0504 × 10^-3-2.782762× 10^-3, 4.1092 × 10^-3 -7.3387 × 10^-3 and 2.0891 ×10^-3-3.2705 × 10-3 μm^2, respectively, and porosity of that is 0.6786-0.9197%, 0.3109-0.3951% and 0.9829-1.8655%, respectively. The results indicate that： （I） the main channels of the relative water-resisting layer are the pore throats with a diameter more than 6 μm; （2） the major proportion of pore throats in the vertical flow channel and the permeability first increases and then sharply decreases; （3） the fractures occurring from the top to 20 m in depth of the strata were filled and there occurred almost no fracture under the depth of 40 m; and （4） the ratio of turning point of the main flow channel in the strata on top of Ordovician can be used to confirm the thickness of filled water-resisting lavers.