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Total ionizing dose effect in an input/output device for flash memory
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作者 刘张李 胡志远 +5 位作者 张正选 邵华 陈明 毕大炜 宁冰旭 邹世昌 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第12期187-191,共5页
Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we obser... Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect. 展开更多
关键词 input/output device oxide trapped charge radiation induced narrow channel effect shallow trench isolation total ionizing dose
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Polarization Projection for 3D Geometry-Based Stochastic Channel Model
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作者 PANG Lihua ZHANG Yang +5 位作者 GONG Fengkui WANG Anyi XIAO Liyuan LIANG Xiao WANG Qiaofeng LI Jiandong 《China Communications》 SCIE CSCD 2015年第10期52-63,共12页
Comprehensive radiation characteristics of polarized antenna are crucial in creating practical channel coefficients for next generation wireless communication system designs.Being currently supported within3 D geometr... Comprehensive radiation characteristics of polarized antenna are crucial in creating practical channel coefficients for next generation wireless communication system designs.Being currently supported within3 D geometry-based stochastic channel models(GSCM),field patterns are technically obtained by chamber measurement(or by its best fitting).However,in some channel related performance analysis scenarios,design insight can be crystallized better by starting the derivations with theoretical co-polarization and cross-polarization components.Specifically,these two components are mathematically linked with field patterns through the proposed polarization projection algorithm.In this manuscript,we focus on revealing the transformation criterion of polarization states between the antenna plane and the propagation plane.In practice,it makes retrieving the field patterns by electromagnetic computation possible.Meanwhile,the impact imposed by distinct antenna orientations is geometrically illustrated and consequently incorporated into the proposed algorithm.This will further facilitate flexible performance evaluation of related radio transmission technologies.Our conclusions are verified by the closed-form expression of the dipole field pattern(via an analytical approach) and by chamber measurement results.Moreover,we find that its 2D degenerative case is aligned with the definitions in 3^(rd) generation partnership project(3GPP)technical report 25.996.The most obvious benefit of the proposed algorithm is to significantly reduce the cost on generating channel coefficients in GSCM simulation. 展开更多
关键词 polarization 3D geometry-based stochastic channel model antenna orientation radiation characteristics dipole chamber measurement channel simulation
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