SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm

We improve the genetic algorithm by combining it with a simulated annealing algorithm. The improved algorithm is used to extract model parameters of SOI MOSFETs, which are fabricated with standard 1.2μm CMOS/SOI technology developed by the Institute of Microelectronics of the Chinese Academy of Sciences. The simulation results using this model are in excellent agreement with experimental results. The precision is improved noticeably compared to commercial software. This method requires neither a deeper understanding of SOl MOSFETs model nor more complex computations than conventional algorithms used by commercial software. Comprehensive verification shows that this model is applicable to a very large range of device sizes.

A Novel Technique of Parameter Extraction for Short Channel Length LDD MOSFETs

A novel parameter extraction technique suitable f or short channel length lightly-doped-drain (LDD) MOSFET's is proposed which seg ments the total gate bias range,and executes the linear regression in every subs ections,yielding the gate bias dependent parameters,such as effective channel le ngth,parasitic resistance,and mobility,etc.This method avoids the gate bias rang e optimization,and retains the accuracy and simplicity of linear regression.The extracted gate bias dependent parameters are implemented in the compact I-V model which has been proposed for deep submicron LDD MOSFET's.The good agreemen ts between simulations and measurements of the devices on 0.18μm CMOS technolo gy indicate the effectivity of this technique.

Parameter Extraction for 2-π Equivalent Circuit Model of RF CMOS Spiral Inductors

A novel parameter extraction method with rational functions is presented for the 2-πequivalent circuit model of RF CMOS spiral inductors. The final S-parameters simulated by the circuit model closely match experimental data. The extraction strategy is straightforward and can be easily implemented as a CAD tool to model spiral inductors. The resulting circuit models will be very useful for RF circuit designers.

Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode.The extraction method for the proposed model is developed.A 2-gate switch structure is fabricated on a commercial 0.5μm AlGaAs/GaAs pHEMT technology to verify the proposed model.Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.

Modeling and Parameter Extraction of VDMOSFET

A sub circuit model for VDMOS is built according to its physical structure.Parameters and formulas describing the device are also derived from this model.Comparing to former results,this model avoids too many technical parameters and simplify the sub circuit efficiently.As a result of numeric computation,this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response (DC error within 5%,AC error within 10%).Such a model is now available for circuit simulation and parameter extraction.

A novel physical parameter extraction approach for Schottky diodes

Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282 c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode＇s electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach.

Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures

Current transport mechanism in Ni-germanide/n-type Ge Schottky diodes is investigated using current-voltage characterisation technique with annealing temperatures from 300 ℃ to 500℃. Based on the current transport model, a simple method to extract parameters of the NiGe/Ge diode is presented by using the I-V characteristics. Parameters of NiGe/n-type Ge Schottky diodes fabricated for testing in this paper are as follows： the ideality factor n, the series resistance Rs, the zero-field barrier height Фb0, the interface state density Dit, and the interracial layer capacitance Ci. It is found that the ideality factor n of the diode increases with the increase of annealing temperature. As the temperature increases, the interface defects from the sputtering damage and the penetration of metallic states into the Ge energy gap are passivated, thus improving the junction quality. However, the undesirable crystallisations of Ni-germanide are observed together with NiGe at a temperature higher than 400℃. Depositing a very thin （-1 nm） heavily Ge-doped n＋ Ge intermediate layer can improve the NiGe film morphology significantly.

Bio-inspired optimization algorithms for optical parameter extraction of dielectric materials: A comparative study

Particle swarm optimization(PSO) and invasive weed optimization(IWO) algorithms are used for extracting the modeling parameters of materials useful for optics and photonics research community. These two bio-inspired algorithms are used here for the first time in this particular field to the best of our knowledge. The algorithms are used for modeling graphene oxide and the performances of the two are compared. Two objective functions are used for different boundary values. Root mean square(RMS) deviation is determined and compared.

A Direct Parameter-Extraction Method for GaInP/GaAs Heterojunction Bipolar Transistors Small-Signal Model

An accurate and broad-band method for hetero-junction bipolar transistors(HBT) small-signal model parameters-extraction is presented in this paper. An equivalent circuit forthe HBT under a forward-bias condition is proposed for extraction of accessresistance and parasiticinductance. This method differs from previous ones by extracting the c-quivalent circuit parameterswithout using special test structure or global numerical optimization techniques. The mainadvantage of this method is that a unique and physically meaningful set of intrinsic parameters isextracted from impedance and admittance representation of the measured S-pa-rameters in thefrequency range of 1-12 GHz under different bias conditions. The method yields a deviation of lessthan 5% between measured and modeled S-parameters.

Electrical Characterization of the through Via in Package-on-Package with Interposer using Parameter Extraction Method

This paper describes a method to extract electrical parameters of the through via in Package-on-Package(PoP)with interposer.Using the de-embedding technique electrical parameters of the through via are extracted.With the extracted electrical parameters of the through via,the effects of via height,the distance between signal and GND vias,and anti-pad clearance on the electrical characteristics are discussed.

Comparative study of various methods for extraction of multi-quantum wells Schottky diode parameters

In this work,forward current voltage characteristics for multi-quantum wells Al_(0.33)Ga_(0.67)As Schottky diode were measured at temperature ranges from 100 to 300 K.The main parameters of this Schottky diode,such as the ideality factor,barrier height,series resistance and saturation current,have been extracted using both analytical and heuristics methods.Differential evolution(DE),particle swarm optimization(PSO)and artificial bee colony(ABC)have been chosen as candidate heuristics algorithms,while Cheung technic was selected as analytical extraction method.The obtained results show clearly the high performance of DE algorithms in terms of parameters accuracy,convergence speed and robustness.

MATERIAL ELECTROMAGNETIC PARAMETERS EXTRACTION USING SVM METHOD

The method extracting the electromagnetic parameters from scattering coefficients was studied in this paper. The Support Vector Machine (SVM) method is used to solve the inverse problem of parameters extraction. The mapping relationship is set up by calculating a large number of S pa-rameters from the samples with different permittivity by using transmission line theory. The simulated data set is used as training data set for SVM. After the training, the SVM is used to predict the permittivity of material from the scattering coefficients.

EQUILIBRIUM MODELS AND PARAMETERS OPTIMIZATION FOR EXTRACTION PROCESS OF BISMUTH AND ANTIMONY WITH N1923

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Selection of Extraction Solvents for Bitumen from Indonesian Oil Sands through Solubility Parameters

Indonesian oil sands were systematically separated to investigate their basic composition.The extraction effects of the solvents with different Hilderbrand solubility parameters(HSPs)on the bitumen of Indonesian oil sands were compared.Furthermore,the Hansen solubility combination parameter(HSCP)and Teas triangle were used to explore rules in the separation of oil sands bitumen via solvent extraction.Finally,the saturates,aromatics,resins,and asphaltenes(SARA)fractions of the bitumen from Indonesian oil sands were analyzed.The results showed that the Indonesian oil sands were oil-wet with a bitumen content of 24.93%.The solvent extraction for bitumen could be accurately and conveniently selected based on the solubility parameter.When the HSPs of the extraction solvent were around 18–19 and the HSCPs were closer to a certain range(δ_(d)=17.5–18.0,δ_(p)=1–3.5,and δ_(h)=2–6),the extraction effect of bitumen from Indonesian oil sands improved,and the primary component affecting the extraction rate of bitumen were asphaltenes.

An Improved Parasitic Parameter Extraction Method for InP HEMT

An improved parasitic parameter extraction method for InP high electron mobil-ity transistor(HEMT)is presented.Parasitic parameter extraction is the first step of model parameter extraction and its accuracy has a great impact on the subsequent internal pa-rameter extraction.It is necessary to accurately determine and effectively eliminate the parasitic effect,so as to avoid the error propagation to the internal circuit parameters.In this paper,in order to obtain higher accuracy of parasitic parameters,parasitic parameters are extracted based on traditional analytical method and optimization algorithm to obtain the best parasitic parameters.The validity of the proposed parasitic parameter extraction method is verified with excellent agreement between the measured and modeled S-param-eters up to 40 GHz for InP HEMT.In 0.1-40 GHz InP HEMT,the average relative error of the optimization algorithm is about 9%higher than that of the analysis method,which verifies the validity of the parasitic parameter extraction method.The extraction of parasit-ic parameters not only provides a foundation for the high-precision extraction of small sig-nal intrinsic parameters of HEMT devices,but also lays a foundation for the high-preci-sion extraction of equivalent circuit model parameters of large signal and noise signals of HEMT devices.

An Improved Parameters Extraction Method for Dumbbell-Shaped Defected Ground Structure

The paper presents an improved equivalent circuit parameters extraction method for the dumbbell-shaped defected ground structure (DGS). The new extraction parameters equations are obtained in closed-form expressions, which contain S11 and S21. The DGS unit with center frequency of 5 GHz is designed and fabricated on a TLX substrate with thickness of 1 mm and dielectric constant of 2.55. The circuit simulated results are in good agreement with the measured results. This parameters extraction method can be widely used for the design and analysis of DGS .

Optimal Extraction of Photovoltaic Model Parameters Using Gravitational Search Algorithm Approach

Extraction of accurate Photo Voltaic (PV) model parameters is a challenging task for PV simulator developers. To mitigate this challenging task a novel approach using Gravitational Search Algorithm (GSA) for accurate extraction of PV model parameters is proposed in this paper. GSA is a population based heuristic optimization method which depends on the law of gravity and mass interactions. In this optimization method, the searcher agents are collection of masses which interact with each other using laws of gravity and motion of Newton. The developed PV model utilizes mathematical equations and is described through an equivalent circuit model comprising of a current source, a diode, a series resistor and a shunt resistor including the effect of changes in solar irradiation and ambient temperature. The optimal values of photo-current, diode ideality factor, series resistance and shunt resistance of the developed PV model are obtained by using GSA. The simulations of the characteristic curves of PV modules (SM55, ST36 and ST40) are carried out using MATLAB/Simulink environment. Results obtained using GSA are compared with Differential Evolution (DE), which shows that GSA based parameters are better optimal when compared to DE.

Non Ideal Schottky Barrier Diode’s Parameters Extraction and Materials Identification from Dark I-V-T Characteristics

Several parameters of a commercial Si-based Schottky barrier diode (SBD) with unknown metal material and semiconductor-type have been investigated in this work from dark forward and reverse I-V characteristics in the temperature (T) range of [274.5 K - 366.5 K]. Those parameters include the reverse saturation current (Is), the ideality factor (n), the series and the shunt resistances (Rs and Rsh), the effective and the zero bias barrier heights (ΦB and ΦB0), the product of the electrical active area (A) and the effective Richardson constant (A**), the built-in potential (Vbi), together with the semiconductor doping concentration (NA or ND). Some of them have been extracted by using two or three different methods. The main features of each approach have been clearly stated. From one parameter to another, results have been discussed in terms of structure performance, comparison on one another when extracted from different methods, accordance or discordance with data from other works, and parameter’s temperature or voltage dependence. A comparison of results on ΦB, ΦB0, n and NA or ND parameters with some available data in literature for the same parameters, has especially led to clear propositions on the identity of the analyzed SBD’s metal and semiconductor-type.

The Effect of Yucca schidigera Extract on Ruminal Fermentation and Parameters Traits in Sheep

In a completely randomized block design experiment, 16 ruminally cannulated sheep （40 ±2.1 kg）fed a 50% concentrate： 50% forage diet （DM basis） were given intraruminal doses of powdered Yucca schidigera extract （YSE）. Doses of 0 （control）, 100, 200, or 300 mg kg^-1 diet were given at 8 p.m. and 4 a.m. On 15, 16, and 17 d of the experimental period, ruminal contents were sampled 0, 2, 4, 6, and 8 h after dosing, and blood samples were collected at the end of the experiment （18th and 19th d）. Acidity was not affected （P〉0.05） by the addition of YSE. Compared with the control, ruminal propionate concentration was increased by 29.4 and 29.8% （P〉 0.05） and the acetic acid concentration was decreased by 15.1 and 19.8% （P〉0.05） at 4 and 6 h after YSE （300 mg kg^-1） dosing, respectively. Ruminal ammonia concentration in the first 2 h after feeding was higher （P〈0.05） in the sheep that did not receive YSE （increased by 17.57 mg 100 mL^-1） than in those that received 200 mg kg^-1（increased by 6.77 mg 100 mL^-1） or 300 mg kg^-1 （increased by 6.50 mg 100 mL^-1） YSE. Protozoan populations in the rumen were lower （P〈0.05） in the animals that received 300 mg kg^-1 of YSE compared with the control. All serum parameters of the four groups were in the normal range and were similar among the treatment groups （P 〉 0.05）, after being fed for 19 d with different doses of YSE. The effect of YSE on ruminal ammonia concentration likely resulted from a decreased concentration of protozoan populations and, presumably, from ammonia binding by YSE.

Effect of thermodynamic parameters on prediction of phase behavior and process design of extractive distillation

Extractive distillation was investigated for separation of the minimum azeotrope of n-propanol/water, via the Aspen Plus simulation platform. Experimental data of n-propanol/water, which could pass the thermodynamic consistency test, were regressed to get suitable binary interaction parameters(BIPs) by the UNIQUAC thermodynamic model. The azeotrope system was heterogeneous in the simulation with built-in BIPs, which was contrary to the experimental data. The study focused on the effect of thermodynamic parameters on the prediction of phase behavior, and process design of extractive distillation. N-methyl-2-pyrrolidone(NMP) and ethylene glycol were used as solvents to implement the separation. Processes with built-in and regressed BIPs were explored,based on the minimum total annual cost(TAC). There were significant differences in the phase behavior simulation using different thermodynamic parameters, which showed the importance of BIPs in the design and optimization of extractive distillation.