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Theoretical investigation of band-gap and mode characteristics of anti-resonance guiding photonic crystal fibres 被引量:1
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作者 苑金辉 桑新柱 +5 位作者 余重秀 忻向军 张锦龙 周桂耀 李曙光 侯蓝田 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第2期302-310,共9页
With the full-vector plane-wave method (FVPWM) and the full-vector beam propagation method (FVBPM), the dependences of the band-gap and mode characteristics on material index and cladding structure parameter in an... With the full-vector plane-wave method (FVPWM) and the full-vector beam propagation method (FVBPM), the dependences of the band-gap and mode characteristics on material index and cladding structure parameter in anti- resonance guiding photonic crystal fibres (ARGPCFs) are sufficiently analysed. An ARGPCF operating in the near- infrared wavelength is shown. The influences of the high index cylinders, glass interstitial apexes and silica structure on the characteristics of band-gaps and modes are deeply investigated. The equivalent planar waveguide theory is used for analysing such an ARGPCF filled by the isotropic materials, and the resonance and the anti-resonance characteristics r:~n h~ w~|] r^r~dlrtpd 展开更多
关键词 anti-resonance guiding photonic crystal fibres full-vector plane-wave method full-vector beam propagation method band-gap and mode characteristics
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Characteristic mode analysis of wideband high-gain and low-profile metasurface antenna
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作者 高坤 曹祥玉 +2 位作者 高军 杨欢欢 韩江枫 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第6期275-281,共7页
A wideband high-gain and low-profile metasurface antenna is proposed by analyzing characteristic quantities and parameters in the characteristic modes(CMs). The detailed modal current and modal weighting coefficient a... A wideband high-gain and low-profile metasurface antenna is proposed by analyzing characteristic quantities and parameters in the characteristic modes(CMs). The detailed modal current and modal weighting coefficient are analyzed to explain the broadband operation and high gain. A dominant characteristic mode is well excited, leading to a broadband operation. The mode behaviors of the excitation are changed to suppress the unwanted higher-order modes and improve the radiation performance by changing the widths of two patches. The measured impedance bandwidth for-10 dB is 39.8%(5.3 GHz–7.94 GHz) with a gain of 7.8 dBi–10.04 dBi over the operating bandwidth. 展开更多
关键词 characteristic mode analysis WIDEBAND high gain metasurface antenna
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Construction of Transgenic Crop Germplasm Effective Function and Characteristic Analysis
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作者 DING Guangzhou WANG Xiaowei 《Journal of Northeast Agricultural University(English Edition)》 CAS 2008年第2期68-75,共8页
Germplasm effect reflects the quantitative relation between production ability of germplasm elements and yield (quality) of a certain crop, which can be shown by mathematic function, namely, germplasm effect functio... Germplasm effect reflects the quantitative relation between production ability of germplasm elements and yield (quality) of a certain crop, which can be shown by mathematic function, namely, germplasm effect function. Germplasm effect of a crop variety is an aggregation of many effective factors, and is restrained by different effective factors; constant increase of any one effect of germplasm elements would lead to law of effect decline, therefore, possible modes of transgenic crops effect function were deduced according to the law of effect decline. The possible modes of single transgenic germplasm effect function and multi-transgenic germplasm effect regression equation were discussed, and the characteristics of germplasm effect regression equation were analyzed in this paper. 展开更多
关键词 transgenic crops germplasm effect function mode and characteristic germplasm operation
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Study of Mode Characteristics for Equilateral Triangle Semiconductor Microlasers 被引量:2
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作者 Qiao-Yin Lu, Xiao-Hong Chen, Wei-Hua Guo, Li-Juan Yu, Yong-Zhen Huang State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China, Tel: 010-82304524, E-mail: luqy@redsemi.ac.cnJian Wang and Yi LuoState Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期329-330,共2页
InGaAsP semiconductor ETR microlasers with side length of 5 and 10 um are fabricated by ICP etching. The peaks in photoluminenscent spectra corresponding to longitudinal modes are observed with the interval consisting... InGaAsP semiconductor ETR microlasers with side length of 5 and 10 um are fabricated by ICP etching. The peaks in photoluminenscent spectra corresponding to longitudinal modes are observed with the interval consisting with the theoretical formulae. 展开更多
关键词 for in on with ICP Study of Mode characteristics for Equilateral Triangle Semiconductor Microlasers of
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