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Growth of Ⅲ-Ⅴ semiconductor nanowires and their heterostructures 被引量:1
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作者 李昂 邹进 韩晓东 《Science China Materials》 SCIE EI CSCD 2016年第1期51-91,共41页
In this paper, we present a review about recent progress on the growth of III-V semiconductor homo- and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventio... In this paper, we present a review about recent progress on the growth of III-V semiconductor homo- and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures. 展开更多
关键词 Ⅲ-Ⅴ SEMICONDUCTOR HETEROSTRUCTURE NANOWIRE advanced charactrization EPITAXY GROWTH
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