We study the interaction of a uniform, cold and collisional plasma with a test charged particle moving off-axis at a constant speed down a cylindrical tube with a resistive thick metallic wall. Upon matching the elect...We study the interaction of a uniform, cold and collisional plasma with a test charged particle moving off-axis at a constant speed down a cylindrical tube with a resistive thick metallic wall. Upon matching the electromagnetic field components at all interfaces, the induced monopole electromagnetic fields in the plasma are obtained in the frequency domain. An expression for the plasma electric resistance and reactance is derived and analyzed numerically for some representative parameters. Near the plasma resonant frequency, the plasma resistance evolves with frequency like a parallel RLC resonator with peak resistance at the plasma frequency pe, while the plasma reactance can be capacitive or inductive in nature depending on the frequency under consideration.展开更多
The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance. By a 3 nm C6...The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/（V.s）. It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor （OTFT） performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/（V-s）. It indicates that further reducing the contact resistance of OTFTs should be carried out.展开更多
基金Supported by the Yarmouk Universitythe KUSTAR–KAIST Institution Fund
文摘We study the interaction of a uniform, cold and collisional plasma with a test charged particle moving off-axis at a constant speed down a cylindrical tube with a resistive thick metallic wall. Upon matching the electromagnetic field components at all interfaces, the induced monopole electromagnetic fields in the plasma are obtained in the frequency domain. An expression for the plasma electric resistance and reactance is derived and analyzed numerically for some representative parameters. Near the plasma resonant frequency, the plasma resistance evolves with frequency like a parallel RLC resonator with peak resistance at the plasma frequency pe, while the plasma reactance can be capacitive or inductive in nature depending on the frequency under consideration.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.10774013,10974013,60978060 and 10804006)the Research Fund for the Doctoral Program of Higher Education,China(Grant Nos.20090009110027,20070004024 and 20070004031)+1 种基金the Beijing Municipal Science and Technology Commission(Grant No.1102028)the National Basic Research Program of China(Grant No.2010CB327704)
文摘The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/（V.s）. It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor （OTFT） performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/（V-s）. It indicates that further reducing the contact resistance of OTFTs should be carried out.
