This paper studies the effect of a charged impurity together with or without an external homogeneous electric field on a quantum ring threaded by a magnetic field B and containing two electrons. The potential caused b...This paper studies the effect of a charged impurity together with or without an external homogeneous electric field on a quantum ring threaded by a magnetic field B and containing two electrons. The potential caused by the impurity has been plotted which is helpful to the understanding of the electronic structures inside the ring. The deep valley appearing in the potential curve is the source of localization, which affects seriously the Aharonov-Bohm oscillation （ABO） of the energy and persistent current. It also causes the fluctuation of the total orbital angular momentum L of the pair of electrons. It is found that the appearance of the impurity reduces the domain of the fractional ABO. During the increase of B, the domain of the integral ABO may appear earlier when B is even quite small. The transition from the localized states to extended states has also been studied. Furthermore, it has deduced a set of related formulae for a transformation, by which an impurity with a charge ep placed at an arbitrary point Rp is equivalent to an impurity with a revised charge ep placed at the X-axis with a revised radial distance Rp. This transformation facilitates the calculation and make the analysis of the physical result clearer.展开更多
Based on semiclassical Boltzamnn transport theory in random phase approximation, we develop a theoretical model to investigate low-temperature carrier transport properties in relatively high doped bilayer graphene. In...Based on semiclassical Boltzamnn transport theory in random phase approximation, we develop a theoretical model to investigate low-temperature carrier transport properties in relatively high doped bilayer graphene. In the presence of both electron–hole puddles and band gap induced by charged impurities, we calculate low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene. Our calculated conductivity results are in excellent agreement with published experimental data in all compensated gate voltage regime of study by using potential fluctuation parameter as only one free fitting parameter, indicating that both electron–hole puddles and band gap induced by charged impurities play an important role in carrier transport. More importantly, we also find that the conductivity not only depends strongly on the total charged impurity density, but also on the top layer charged impurity density, which is different from that obtained by neglecting the opening of band gap, especially for bilayer graphene with high top layer charged impurity density.展开更多
基金Project supported by the Natural Science Foundation of Fujian Province of China （Grant No T0650010）.
文摘This paper studies the effect of a charged impurity together with or without an external homogeneous electric field on a quantum ring threaded by a magnetic field B and containing two electrons. The potential caused by the impurity has been plotted which is helpful to the understanding of the electronic structures inside the ring. The deep valley appearing in the potential curve is the source of localization, which affects seriously the Aharonov-Bohm oscillation （ABO） of the energy and persistent current. It also causes the fluctuation of the total orbital angular momentum L of the pair of electrons. It is found that the appearance of the impurity reduces the domain of the fractional ABO. During the increase of B, the domain of the integral ABO may appear earlier when B is even quite small. The transition from the localized states to extended states has also been studied. Furthermore, it has deduced a set of related formulae for a transformation, by which an impurity with a charge ep placed at an arbitrary point Rp is equivalent to an impurity with a revised charge ep placed at the X-axis with a revised radial distance Rp. This transformation facilitates the calculation and make the analysis of the physical result clearer.
文摘Based on semiclassical Boltzamnn transport theory in random phase approximation, we develop a theoretical model to investigate low-temperature carrier transport properties in relatively high doped bilayer graphene. In the presence of both electron–hole puddles and band gap induced by charged impurities, we calculate low-temperature charged impurity scattering-limited conductivity in relatively high doped bilayer graphene. Our calculated conductivity results are in excellent agreement with published experimental data in all compensated gate voltage regime of study by using potential fluctuation parameter as only one free fitting parameter, indicating that both electron–hole puddles and band gap induced by charged impurities play an important role in carrier transport. More importantly, we also find that the conductivity not only depends strongly on the total charged impurity density, but also on the top layer charged impurity density, which is different from that obtained by neglecting the opening of band gap, especially for bilayer graphene with high top layer charged impurity density.
基金supported by the National Key R&D Program of China(2022YFA1203802 and 2021YFA1202903)the National Natural Science Foundation of China(92264202,61974060 and 61674080)the Innovation and Entrepreneurship Program of Jiangsu Province.
