This work reveals essential details of plasma-surface interaction in atmospheric air that are important for a wide range of applications, beginning from airflow control and up to the high-voltage insulation. The paper...This work reveals essential details of plasma-surface interaction in atmospheric air that are important for a wide range of applications, beginning from airflow control and up to the high-voltage insulation. The paper discusses experimental data characterizing dynamics of development and kinetics of energy coupling in surface dielectric barrier discharge (SDBD), atmospheric air plasmas sustained over dielectric surfaces, over a wide range of time scales. The experiments have been conducted using microsecond pulse voltage waveform of single and alternating polarities. Time-resolved discharge development and mechanisms of coupling with quiescent air are analyzed using nanosecond gate camera imaging, electrical measurements, and original surface charge sensors. The results demonstrate several new, critically important processes overlooked in previous studies. Specifically, it is shown that SDBD plasmas energy release may be significantly increased by using an optimized waveform.展开更多
The charge transfer potential barrier （CTPB） formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode （PPD） CMOS image sensors （CIS）, and is difficult to measure straightforwardl...The charge transfer potential barrier （CTPB） formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode （PPD） CMOS image sensors （CIS）, and is difficult to measure straightforwardly since it is embedded inside the device. From an understanding of the CTPB formation mechanism, we report on an alternative method to feasibly measure the CTPB height by performing a linear extrapolation coupled with a horizontal left-shift on the sensor photoresponse curve under the steady-state illumination. The theoretical study was pertbrmed in detail on the principle of the proposed method. Application of the measurements oil a prototype PPD-CIS chip with an array of 160 ×160 pixels is demonstrated. Such a method intends to shine new light oil the guidance for the lag-free and high-speed sensors optimization based on PPD devices.展开更多
The charge transfer efficiency improvement method is introduced by optimizing the electrical potential distribution under the transfer gate along the charge transfer path. A non-uniform doped transfer transistor chan-...The charge transfer efficiency improvement method is introduced by optimizing the electrical potential distribution under the transfer gate along the charge transfer path. A non-uniform doped transfer transistor chan- nel is introduced to provide an ascending electrical potential gradient in the transfer transistor channel. With the adjustments to the overlap length between the R1 region and the transfer gate, the doping dose of the R1 region, and the overlap length between the anti-punch-through （APT） implantations and transfer gate, the potential barrier and potential pocket in the connecting region of transfer transistor channel and the pinned photodiode （PPD） are reduced to improve the electrical potential connection. The simulation results show that the percentage of residual charges to total charges drops from 1/10^4 to 1/10^7, and the transfer time is reduced from 500 to 110 ns. This means the charge transfer efficiency is improved.展开更多
文摘This work reveals essential details of plasma-surface interaction in atmospheric air that are important for a wide range of applications, beginning from airflow control and up to the high-voltage insulation. The paper discusses experimental data characterizing dynamics of development and kinetics of energy coupling in surface dielectric barrier discharge (SDBD), atmospheric air plasmas sustained over dielectric surfaces, over a wide range of time scales. The experiments have been conducted using microsecond pulse voltage waveform of single and alternating polarities. Time-resolved discharge development and mechanisms of coupling with quiescent air are analyzed using nanosecond gate camera imaging, electrical measurements, and original surface charge sensors. The results demonstrate several new, critically important processes overlooked in previous studies. Specifically, it is shown that SDBD plasmas energy release may be significantly increased by using an optimized waveform.
基金Project supported by the National Defense Pre-Research Foundation of China(No.51311050301095)
文摘The charge transfer potential barrier （CTPB） formed beneath the transfer gate causes a noticeable image lag issue in pinned photodiode （PPD） CMOS image sensors （CIS）, and is difficult to measure straightforwardly since it is embedded inside the device. From an understanding of the CTPB formation mechanism, we report on an alternative method to feasibly measure the CTPB height by performing a linear extrapolation coupled with a horizontal left-shift on the sensor photoresponse curve under the steady-state illumination. The theoretical study was pertbrmed in detail on the principle of the proposed method. Application of the measurements oil a prototype PPD-CIS chip with an array of 160 ×160 pixels is demonstrated. Such a method intends to shine new light oil the guidance for the lag-free and high-speed sensors optimization based on PPD devices.
基金Project supported by National Natural Science Foundation of China(Nos.61036004,61076024)
文摘The charge transfer efficiency improvement method is introduced by optimizing the electrical potential distribution under the transfer gate along the charge transfer path. A non-uniform doped transfer transistor chan- nel is introduced to provide an ascending electrical potential gradient in the transfer transistor channel. With the adjustments to the overlap length between the R1 region and the transfer gate, the doping dose of the R1 region, and the overlap length between the anti-punch-through （APT） implantations and transfer gate, the potential barrier and potential pocket in the connecting region of transfer transistor channel and the pinned photodiode （PPD） are reduced to improve the electrical potential connection. The simulation results show that the percentage of residual charges to total charges drops from 1/10^4 to 1/10^7, and the transfer time is reduced from 500 to 110 ns. This means the charge transfer efficiency is improved.
