Here we report an in situ assembly growth method that controls the growth of NiTCNQ on the surface of graphdiyne(GDY).The catalytic system of donor–acceptor–donor(GDY/TCNQ/Ni)structure with multiple charge transfer(...Here we report an in situ assembly growth method that controls the growth of NiTCNQ on the surface of graphdiyne(GDY).The catalytic system of donor–acceptor–donor(GDY/TCNQ/Ni)structure with multiple charge transfer(CT)was achieved by controlling the growth of NiTCNQ on the surface of GDY.Significantly,a controlled double layer interface of GDY/TCNQ/Ni was formed.This system implemented simultaneously the two elements we expected(1)an incomplete CT,and(2)the infinite distribution of active sites originating from highly asymmetric surface charge distribution.The high conductivity and typical semiconductor characteristics of the catalyst endows it with high catalytic activity.We found that an electrolytic cell consisting of the CT salt as a catalyst provided a 1.40 V ultra-small cell voltage up to 10 mA cm−2 and the outer GDY film effectively prevented the corrosion of the catalyst.Our study is the first to introduce CT complexes to a novel catalytic material platform for high selectivity of catalysts,and undoubtedly demonstrates the high selectivity,stability,and activity of such catalytic systems,which provides a new space for the development of novel conceptual catalysts.展开更多
The crystal structure of the compound EDA Ni(dmit) 2 3 (EDA=2 diethylamino 1,3 dithioanylium; dmit=1,3 dithiole 2 thione 4,5 dithiolate)C 25 H 14 NNi 3S 32 , has been determined by single...The crystal structure of the compound EDA Ni(dmit) 2 3 (EDA=2 diethylamino 1,3 dithioanylium; dmit=1,3 dithiole 2 thione 4,5 dithiolate)C 25 H 14 NNi 3S 32 , has been determined by single crystal X ray diffraction at 300K. The crystal is triclinic with space group P1, a=11.252, b=12.192(2), c=20.055(6) , α=108.127(2), β=106.287(8), γ=90.005(9)°; V=2498.3(3) 3, Z=2, M r=1530.38, D c =2.03(2) g/cm 3. Final R and R w values were 0.0603 and 0.0704, respectively. The structure consists of thick layers of stacked Ni(dmit) 2 entities separated by EDA cations. This salt shows semiconducting behaviour with room temperature conductivity of 0.2 Scm -1 and activation energy of 0.11 eV.展开更多
基金by a generous grant from the National Key Research and Development Project of China(no.2018YFA0703501)the National Nature Science Foundation of China(nos.21790050,21790051,and 22021002)the Key Program of the Chinese Academy of Sciences(no.XDPB13).
文摘Here we report an in situ assembly growth method that controls the growth of NiTCNQ on the surface of graphdiyne(GDY).The catalytic system of donor–acceptor–donor(GDY/TCNQ/Ni)structure with multiple charge transfer(CT)was achieved by controlling the growth of NiTCNQ on the surface of GDY.Significantly,a controlled double layer interface of GDY/TCNQ/Ni was formed.This system implemented simultaneously the two elements we expected(1)an incomplete CT,and(2)the infinite distribution of active sites originating from highly asymmetric surface charge distribution.The high conductivity and typical semiconductor characteristics of the catalyst endows it with high catalytic activity.We found that an electrolytic cell consisting of the CT salt as a catalyst provided a 1.40 V ultra-small cell voltage up to 10 mA cm−2 and the outer GDY film effectively prevented the corrosion of the catalyst.Our study is the first to introduce CT complexes to a novel catalytic material platform for high selectivity of catalysts,and undoubtedly demonstrates the high selectivity,stability,and activity of such catalytic systems,which provides a new space for the development of novel conceptual catalysts.
文摘The crystal structure of the compound EDA Ni(dmit) 2 3 (EDA=2 diethylamino 1,3 dithioanylium; dmit=1,3 dithiole 2 thione 4,5 dithiolate)C 25 H 14 NNi 3S 32 , has been determined by single crystal X ray diffraction at 300K. The crystal is triclinic with space group P1, a=11.252, b=12.192(2), c=20.055(6) , α=108.127(2), β=106.287(8), γ=90.005(9)°; V=2498.3(3) 3, Z=2, M r=1530.38, D c =2.03(2) g/cm 3. Final R and R w values were 0.0603 and 0.0704, respectively. The structure consists of thick layers of stacked Ni(dmit) 2 entities separated by EDA cations. This salt shows semiconducting behaviour with room temperature conductivity of 0.2 Scm -1 and activation energy of 0.11 eV.
