A design for a Li-ion battery charger IC that can operate in a constant current-constant voltage (CC- CV) charge mode is proposed. In the CC-CV charge mode,the charger IC provides a constant charging current at the ...A design for a Li-ion battery charger IC that can operate in a constant current-constant voltage (CC- CV) charge mode is proposed. In the CC-CV charge mode,the charger IC provides a constant charging current at the beginning, and then the charging current begins to decrease before the battery voltage reaches its final value. After the battery voltage reaches its final value and remains constant,the charging current is further reduced. This approach prevents charging the battery with full current near its saturated voltage,which can cause heating. The novel design of the core of the charger IC realizes the proposed CC-CV charge mode. The chip was implemented in a CSMC 0.6μm CMOS mixed signal process. The experimental results verify the realization of the proposed CC- CV charge mode. The voltage of the battery after charging is 4. 1833V.展开更多
Non-thermal plasma surface modification for epoxy resin(EP)to improve the insulation properties has wide application prospects in gas insulated switchgear and gas insulatedtransmission line.In this paper,a pulsed Ar...Non-thermal plasma surface modification for epoxy resin(EP)to improve the insulation properties has wide application prospects in gas insulated switchgear and gas insulatedtransmission line.In this paper,a pulsed Ar dual dielectrics atmospheric-pressure plasma jet(APPJ)was used for Si CxHyOzthin film deposition on EP samples.The film deposition was optimized by varying the treatment time while other parameters were kept at constants(treatment distance:10 mm,precursor flow rate:0.6 l min-(-1),maximum instantaneous power:3.08 k W and single pulse energy:0.18 m J).It was found that the maximum value of flashover voltages for negative and positive voltage were improved by 18%and 13%when the deposition time was3 min,respectively.The flashover voltage reduced as treatment time increased.Moreover,all the surface conductivity,surface charge dissipation rate and surface trap level distribution reached an optimal value when thin film deposition time was 3 min.Other measurements,such as atomic force microscopy and scanning electron microscope for EP surface morphology,Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy for EP surface compositions,optical emission spectra for APPJ deposition process were carried out to better understand the deposition processes and mechanisms.The results indicated that the original organic groups(C–H,C–C,C=O,C=C)were gradually replaced by the Si containing inorganic groups(Si–O–Si and Si–OH).The reduction of C=O in ester group and C=C in p-substituted benzene of the EP samples might be responsible for shallowing the trap level and then enhancing the flashover voltage.However,when the plasma treatment time was longer than 3 min,the significant increase of the surface roughness might increase the trap level depth and then deteriorate the flashover performance.展开更多
We investigate the effects of (N,N’-diphenyl)-N,N’-bis(1-naphthyl)-1,1’-biphenyl-4,4’-diamine (NPB) buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin...We investigate the effects of (N,N’-diphenyl)-N,N’-bis(1-naphthyl)-1,1’-biphenyl-4,4’-diamine (NPB) buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin layer enhances the efficiency of charge collection by improving charge transport and reducing the interface energy barrier, resulting in better device performances. S-shaped light J–V curve appears when the thickness of the NPB layer reaches 25 nm, which is induced by the inefficient charge extraction from MEH-PPV to Ag. Capacitance–voltage measurements are performed to further investigate the influence of the NPB layer on charge collection from both simulations and experiments.展开更多
Lithium-ion(Li-ion)cells degrade after repeated cycling and the cell capacity fades while its resistance increases.Degra-dation of Li-ion cells is caused by a variety of physical and chemical mechanisms and it is stro...Lithium-ion(Li-ion)cells degrade after repeated cycling and the cell capacity fades while its resistance increases.Degra-dation of Li-ion cells is caused by a variety of physical and chemical mechanisms and it is strongly influenced by factors including the electrode materials used,the working conditions and the battery temperature.At present,charging voltage curve analysis methods are widely used in studies of battery characteristics and the constant current charging voltage curves can be used to analyze battery aging mechanisms and estimate a battery’s state of health(SOH)via methods such as incremental capacity(IC)analysis.In this paper,a method to fit and analyze the charging voltage curve based on a neural network is proposed and is compared to the existing point counting method and the polynomial curve fitting method.The neuron parameters of the trained neural network model are used to analyze the battery capacity relative to the phase change reactions that occur inside the batteries.This method is suitable for different types of batteries and could be used in battery management systems for online battery modeling,analysis and diagnosis.展开更多
Discharge parameters are measured and calculated in electrostatic discharge (ESD) from charged human body through a small moving handheld metal rod. Correlation study has been performed on discharge parameters with ...Discharge parameters are measured and calculated in electrostatic discharge (ESD) from charged human body through a small moving handheld metal rod. Correlation study has been performed on discharge parameters with charge voltage as well as approach speed. At charge voltage 800 V, difference of discharge parameters caused by fast and slow approach speed of electrode is found to reach extreme values. To explore the reason for this special case, an analysis with a short-gap ESD model is carried out.展开更多
This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory(EEPROM).The low power is minimized by a capacitance divider circuit ...This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory(EEPROM).The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage(V_(th)) MOSFET and the charge transfer switch(CTS) charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48μW and a higher pumping efficiency(83.3%) than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.展开更多
An overall analysis of the trench superjunction insulated gate bipolar transistor(SJ IGBT) is presented and a detailed comparison between a trench SJ IGBT and a trench field stop IGBT is made by simulating with Sent...An overall analysis of the trench superjunction insulated gate bipolar transistor(SJ IGBT) is presented and a detailed comparison between a trench SJ IGBT and a trench field stop IGBT is made by simulating with Sentaurus TC AD.More specifically,simulation results show that the trench SJ IGBT exhibits a breakdown voltage that is raised by 100 V while the on-state voltage is reduced by 0.2 V.Atthe same time,the turn-off loss is decreased by 50%.The effect of charge imbalance on the static and dynamic characteristics of the trench SJ IGBT is studied, and the trade-off between parameters and their sensitivity versus charge imbalance is discussed.展开更多
文摘A design for a Li-ion battery charger IC that can operate in a constant current-constant voltage (CC- CV) charge mode is proposed. In the CC-CV charge mode,the charger IC provides a constant charging current at the beginning, and then the charging current begins to decrease before the battery voltage reaches its final value. After the battery voltage reaches its final value and remains constant,the charging current is further reduced. This approach prevents charging the battery with full current near its saturated voltage,which can cause heating. The novel design of the core of the charger IC realizes the proposed CC-CV charge mode. The chip was implemented in a CSMC 0.6μm CMOS mixed signal process. The experimental results verify the realization of the proposed CC- CV charge mode. The voltage of the battery after charging is 4. 1833V.
基金supported by National Natural Science Foundation of China under contract No.11575194the National Basic Research Program of China(973 Project) under contract No.2014CB239505-3+2 种基金Natural Science Foundation of Hebei Province under contract No.E2015502081the Fundamental Research Funds for the Central Universities under contract No.2016ZZD07the Young Scholar of the Chang Jiang Scholars Program,Ministry of Education,China
文摘Non-thermal plasma surface modification for epoxy resin(EP)to improve the insulation properties has wide application prospects in gas insulated switchgear and gas insulatedtransmission line.In this paper,a pulsed Ar dual dielectrics atmospheric-pressure plasma jet(APPJ)was used for Si CxHyOzthin film deposition on EP samples.The film deposition was optimized by varying the treatment time while other parameters were kept at constants(treatment distance:10 mm,precursor flow rate:0.6 l min-(-1),maximum instantaneous power:3.08 k W and single pulse energy:0.18 m J).It was found that the maximum value of flashover voltages for negative and positive voltage were improved by 18%and 13%when the deposition time was3 min,respectively.The flashover voltage reduced as treatment time increased.Moreover,all the surface conductivity,surface charge dissipation rate and surface trap level distribution reached an optimal value when thin film deposition time was 3 min.Other measurements,such as atomic force microscopy and scanning electron microscope for EP surface morphology,Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy for EP surface compositions,optical emission spectra for APPJ deposition process were carried out to better understand the deposition processes and mechanisms.The results indicated that the original organic groups(C–H,C–C,C=O,C=C)were gradually replaced by the Si containing inorganic groups(Si–O–Si and Si–OH).The reduction of C=O in ester group and C=C in p-substituted benzene of the EP samples might be responsible for shallowing the trap level and then enhancing the flashover voltage.However,when the plasma treatment time was longer than 3 min,the significant increase of the surface roughness might increase the trap level depth and then deteriorate the flashover performance.
基金Project supported by the National Basic Research Program of China(Grant No.2010CB327704)the National Natural Science Foundation of China(Grant No.51272022)+2 种基金the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.NCET-10-0220)the Research Fund for the Doctoral Program of Higher Education,China(Grant No.20120009130005)the Fundamental Research Funds for the Central Universities,China(Grant No.2012JBZ001)
文摘We investigate the effects of (N,N’-diphenyl)-N,N’-bis(1-naphthyl)-1,1’-biphenyl-4,4’-diamine (NPB) buffer layers on charge collection in inverted ZnO/MEH-PPV hybrid devices. The insertion of a 3-nm NPB thin layer enhances the efficiency of charge collection by improving charge transport and reducing the interface energy barrier, resulting in better device performances. S-shaped light J–V curve appears when the thickness of the NPB layer reaches 25 nm, which is induced by the inefficient charge extraction from MEH-PPV to Ag. Capacitance–voltage measurements are performed to further investigate the influence of the NPB layer on charge collection from both simulations and experiments.
基金This work is supported by the Beijing Natural Science Foundation under the Grant No.3184052the National Natural Science Foundation of China(NSFC)under the Grant No.51807108 and No.U1564205International Science and Technology Cooperation Program of China under contract No.2016YFE0102200.
文摘Lithium-ion(Li-ion)cells degrade after repeated cycling and the cell capacity fades while its resistance increases.Degra-dation of Li-ion cells is caused by a variety of physical and chemical mechanisms and it is strongly influenced by factors including the electrode materials used,the working conditions and the battery temperature.At present,charging voltage curve analysis methods are widely used in studies of battery characteristics and the constant current charging voltage curves can be used to analyze battery aging mechanisms and estimate a battery’s state of health(SOH)via methods such as incremental capacity(IC)analysis.In this paper,a method to fit and analyze the charging voltage curve based on a neural network is proposed and is compared to the existing point counting method and the polynomial curve fitting method.The neuron parameters of the trained neural network model are used to analyze the battery capacity relative to the phase change reactions that occur inside the batteries.This method is suitable for different types of batteries and could be used in battery management systems for online battery modeling,analysis and diagnosis.
基金Guizhou Provincial Foundation for Natural Science and Technology (20072211)the National Natural Science Foundation of China (50237040)the Hi-Tech Research and Development Program of China (2007AA01Z281)
文摘Discharge parameters are measured and calculated in electrostatic discharge (ESD) from charged human body through a small moving handheld metal rod. Correlation study has been performed on discharge parameters with charge voltage as well as approach speed. At charge voltage 800 V, difference of discharge parameters caused by fast and slow approach speed of electrode is found to reach extreme values. To explore the reason for this special case, an analysis with a short-gap ESD model is carried out.
基金supported by the National Natural Science Foundation of China(No.61072010)
文摘This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory(EEPROM).The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage(V_(th)) MOSFET and the charge transfer switch(CTS) charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48μW and a higher pumping efficiency(83.3%) than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.
基金supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002)
文摘An overall analysis of the trench superjunction insulated gate bipolar transistor(SJ IGBT) is presented and a detailed comparison between a trench SJ IGBT and a trench field stop IGBT is made by simulating with Sentaurus TC AD.More specifically,simulation results show that the trench SJ IGBT exhibits a breakdown voltage that is raised by 100 V while the on-state voltage is reduced by 0.2 V.Atthe same time,the turn-off loss is decreased by 50%.The effect of charge imbalance on the static and dynamic characteristics of the trench SJ IGBT is studied, and the trade-off between parameters and their sensitivity versus charge imbalance is discussed.