Oxygen Functionalization-Induced Charging Effect on Boron Active Sites for High-Yield Electrocatalytic NH_(3) Production

Ammonia has been recognized as the future renewable energy fuel because of its wide-ranging applications in H_(2) storage and transportation sector.In order to avoid the environmentally hazardous Haber-Bosch process,recently,the third-generation ambient ammonia synthesis has drawn phenom-enal attention and thus tremendous efforts are devoted to developing efficient electrocatalysts that would circumvent the bottlenecks of the electrochemical nitrogen reduction reaction(NRR)like competitive hydrogen evolution reac-tion,poor selectivity of N_(2) on catalyst surface.Herein,we report the synthesis of an oxygen-functionalized boron carbonitride matrix via a two-step pyrolysis technique.The conductive BNCO(1000)architecture,the compatibility of B-2p_(z) orbital with the N-2p_(z) orbital and the charging effect over B due to the C and O edge-atoms in a pentagon altogether facilitate N_(2) adsorption on the B edge-active sites.The optimum electrolyte acidity with 0.1 M HCl and the lowered anion crowding effect aid the protonation steps of NRR via an associative alternating pathway,which gives a sufficiently high yield of ammonia(211.5μg h^(−1) mg_(cat)^(−1))on the optimized BNCO(1000)catalyst with a Faradaic efficiency of 34.7%at−0.1 V vs RHE.This work thus offers a cost-effective electrode material and provides a contemporary idea about reinforcing the charging effect over the secured active sites for NRR by selectively choosing the electrolyte anions and functionalizing the active edges of the BNCO(1000)catalyst.

Space Charges Effect of Static Induction Transistor

The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated.

界面效应在锰氧化物修饰的CeO_(2)纳米立方甲苯氧化中的作用

本研究通过水热-浸渍两步法成功制备了不同Mn负载量的二元xMn/Ce(xMnOx/CeO_(2))催化剂,并评估了催化剂在甲苯催化氧化反应中的性能。研究结果表明,引入MnOx能显著提高催化剂的甲苯氧化活性。特别是当Mn负载量为10%(10Mn/Ce)时,在气体空速为60000 mL/(g·h)的条件下,t90(甲苯转化率达到90%时的温度)仅为233℃,显示出最优的甲苯催化氧化活性。这一结果说明,适量加入MnOx能够显著提高催化剂的催化性能。通过X射线衍射(XRD)、拉曼光谱(Raman)、透射电子显微镜(TEM)、程序升温还原(H2-TPR)和X射线光电子能谱(XPS)等表征手段,发现MnOx的加入在MnOx与CeO_(2)之间形成了界面效应,这显著改变了Mn/Ce催化剂的物理化学性质。由于界面效应的作用,不仅提高了10 Mn/Ce催化剂中Ce3+、Mn3+离子的浓度以及氧空位的浓度,而且还降低了催化剂表面Ce−O键强度,使得表面晶格氧更易于参与甲苯的催化氧化,提升了催化剂的氧化还原性能,从而促进了甲苯的催化氧化。本研究不仅成功制备了具有优异甲苯氧化活性的Mn/Ce催化剂,而且揭示了其背后的界面效应机制,为VOCs高效氧化催化剂设计与制备提供了简单有效的方法与思路。

Negative inductive effect enhances charge transfer driving in sulfonic acid functionalized graphitic carbon nitride with efficient visible-light photocatalytic performance

Efficient photogenerated carrier migration/separation plays a critical role in increasing the photocatalytic performance of g-C_(3)N_(4).Herein,sulfonic acid group-functionalized g-C_(3)N_(4)(SACN)was synthesized and then synchronously strengthened by a facile-solid-state thermal reaction of g-C_(3)N_(4)and sulfamic acid.As a solid strong acid,sulfamic acid can be used to achieve acid etching on the surface of g-C_(3)N_(4)with the assistance of thermal treatment,leading to an enlarged specific surface area and increased surface catalytic reaction sites.More importantly,our experiments and density functional theory calculations indicate that the driving force generated by the negative inductive effect of sulfonic acid groups significantly improves the charge transfer dynamics and effectively inhibits their recombination.Moreover,the negative inductive effect can induce charge redistribution,which reduces the conduction band potential of g-C_(3)N_(4)to enhance the reduction ability of photo-induced electrons.As a result,the SACN-400 sample showed excellent photocatalytic performance in H2 generation with an apparent quantum efficiency of 11.03%at 420±15 nm,as well as an efficient photodegradation rate for organic pollutants.

Dynamic characteristics of charging effects on the dielectric constant due to E-beam irradiation:a numerical simulation

A series of synthetic variations of material intrinsic properties always come with charging phenomena due to electron beam irradiation.The effects of charging on the dielectric constant will influence the charging dynamic in return.In this paper,we propose a numerical simulation for investigating the dynamic characteristics of charging effects on the dielectric constant due to electron beam irradiation.The scattering process between electrons and atoms is calculated considering elastic and inelastic collisions via the Rutherford model and the fast secondary electron model,respectively.Internal charge drift due to E-field,density gradient caused diffusion,charges trap by material defect,free electron and hole neutralization,and variation in the internal dielectric constant are considered when simulating the transport process.The dynamics of electron and hole distributions and charging states are demonstrated during E-beam irradiation.As a function of material nonlinear susceptibility and primary energy,the dynamics of charging states and dielectric constants are then presented in the charging process.It is found that the variation in the internal dielectric constant is more with respect to the depth and irradiation time.Material with a larger nonlinear susceptibility corresponds a faster charging enhancement.In addition,the effective dielectric constant and the surface potential have a linear relationship in the charging balance.Nevertheless,with shrinking charging affect range,the situation with a higher energy primary electron comes with less dielectric constant variation.The proposed numerical simulation mode of the charging process and the results presented in this study offer a comprehensive insight into the complicated charging phenomena in electron irradiation related fields.

Mitigating Deep Dielectric Charging Effects at the Orbits of Jovian Planets

Deep dielectric charging/discharging,caused by high energy electrons,is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures.The Jovian planets,including Saturn,Uranus,Neptune and Jupiter’s moons,are believed to have robust electron radiation belts at relativistic energies.In particular,Jupiter is thought to have caused at least 42 internal electrostatic discharge events during the Voyager 1 flyby.With the development of deep space exploration,there is an increased focus on the deep dielectric charging effects in the orbits of Jovian planets.In this paper,GEANT4,a Monte Carlo toolkit,and radiation-induced conductivity(RIC)are used to calculate deep dielectric charging effects for Jovian planets.The results are compared with the criteria for preventing deep dielectric charging effects in Earth orbit.The findings show that effective criteria used in Earth orbit are not always appropriate for preventing deep dielectric charging effects in Jovian orbits.Generally,Io,Europa,Saturn(R_S=6),Uranus(L=4.73)and Ganymede missions should have a thicker shield or higher dielectric conductivity,while Neptune(L=7.4)and Callisto missions can have a thinner shield thickness or a lower dielectric conductivity.Moreover,dielectrics grounded with double metal layers and thinner dielectrics can also decrease the likelihood of discharges.

Electron beam modeling and analyses of the electric field distribution and space charge effect

In electron beam technology, one of the critical focuses of research and development efforts is on improving the measurement of electron beam parameters. The parameters are closely related to the generation, emission, operation environment, and role of the electron beam and the corresponding medium. In this study, a field calculation method is proposed, and the electric field intensity distribution on the electron beam’s cross-section is analyzed. The characteristics of beam diffusion caused by the space charge effect are investigated in simulation, and the obtained data are compared with the experiment. The simulation demonstrated that the cross-sectional electric field distribution is primarily affected by the electron beam current, current density distribution, and electron beam propagation speed.

Total Ionization Dose Effects on Charge Storage Capability of Al2O3/HfO2/Al2O3-Based Charge Trapping Memory Cell

Because of the discrete charge storage mechanism, charge trapping memory（CTM） technique is a good candidate for aerospace and military missions. The total ionization dose（TID） effects on CTM cells with Al2O3/HfO2/Al2O3（AHA） high-k gate stack structure under in-situ 10 keV x-rays are studied. The C-V characteristics at different radiation doses demonstrate that charge stored in the device continues to be leaked away during the irradiation,thereby inducing the shift of flat band voltage（V（fb））. The dc memory window shows insignificant changes, suggesting the existence of good P/E ability. Furthermore, the physical mechanisms of TID induced radiation damages in AHA-based CTM are analyzed.

Effects of Tailed Pulse-Bias on Ion Energy Distributions and Charging Effects on Insulating Substrates

Abstract A hybrid sheath model, including a fluid model and a Monte Carlo （MC） method, is proposed to study ion energy distributions （IEDs） driven by a radiofrequency （RF） with a tailed pulse-bias on an insulating substrate, where a charging effect is obviously caused by the ions accumulated. This surface charging effect will significantly affect the IEDs on the insulating substrate. In this paper, a voltage compensation method is employed to eliminate the charging effect by making the pulse-bias waveform have a certain gradient. Furthermore, we investigate the IEDs under the condition of different pulse-bias duty ratios, waveforms, amplitudes, and cycle proportions. It is found that the parameters of the pulsed source can effectively modulate the IEDs on the insulating substrate and the charging effect, and more desired IEDs are obtained by using the voltage compensation method with modulations of pulse parameters.

Charging Effect in Plasma Etching Mask of Hole Array

It has already been found that the round shape of holes can be changed into hexagonal shape during plasma etching processes.This work aims to understand the mechanism behind such a shape change using particle simulation method.The distribution of electric field produced by electrons was calculated for different heights from the mask surface.It is found that the field strength reaches its maximum around a hole edge and becomes the weakest between two holes. The field strength is weakened as moving away from the surface.The spatial distribution of this electric field shows obvious hexagonal shape around a hole edge at some distances from the surface. This charging distribution then affects the trajectories of ions that fall on a mask surface so that the round hole edge is etched to become a hexagonal hole edge.The changing of this hole shape will again alter the spatial distribution of electric field to enhance the charging effect dynamically.

Impact of substrate bias on radiation-induced edge effects in MOSFETs

This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation （STI） leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias, Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.

Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Γ critical point

This paper describes an n-i-p-i-n model heterostructure with a manganese （Mn）-doped p-type base region to check the stability of a positively charged manganese A＋Mn centre with two holes weakly bound by a negatively charged 3dS（Mn） core of a local spin S = 5/2 in the framework of the effective mass approximation near the F critical point （k -0）. By including the carrier screening effect, the ground state energy and the binding energy of the second hole in the positively charged centre A＋Mn are calculated within a hole concentration range from 1 ×10^16 cm-3 to 1 × 10^17 cm^-3, which is achievable by biasing the structure under photo-excitation. For comparison, the ground-state energy of a single hole in the neutral AMn centre is calculated in the same concentration range. It turns out that the binding energy of the second hole in the A＋Mn centre varies from 9.27 meV to 4.57 meV. We propose that the presence of the A＋Mn centre can be examined by measuring the photoluminescence from recombination of electrons in the conduction band with the bound holes in the A＋Mn centre since a high frequency dielectric constant of ε∞ = 10.66 can be safely adopted in this case. The novel feature of the ability to tune the impurity level of the A＋Mn centre makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors.

Interaction of solitary waves in magnetized warm dusty plasmas with dust charging effects

In consideration of adiabatic dust charge variation, the combined effect of the external magnetized field and the dust temperature on head-on collision of the three-dimensional dust acoustic solitary waves is investigated. By using the extended Poincaré-Lighthill-Kuo method, the phase shifts and the trajectories of two solitons after the collision are obtained. The effects of the magnitude and the obliqueness of the external magnetic field and the dust temperature on the solitary wave collisions are discussed in detail,

Quantitative evaluation of space charge effects of laser-cooled three-dimensional ion system on a secular motion period scale

In this paper,we introduce a method of quantitatively evaluating and controlling the space charge effect of a lasercooled three-dimensional（3 D） ion system in a linear Paul trap.The relationship among cooling efficiency,ion quantity,and trapping strength is analyzed quantitatively,and the dynamic space distribution and temporal evolution of the 3 D ion system on a secular motion period time scale in the cooling process are obtained.The ion number influences the eigen-micromotion feature of the ion system.When trapping parameter q is ～ 0.3,relatively ideal cooling efficiency and equilibrium temperature can be obtained.The decrease of axial electrostatic potential is helpful in reducing the micromotion heating effect and the degradation in the total energy.Within a single secular motion period under different cooling conditions,ions transform from the cloud state（each ion disperses throughout the envelope of the ion system） to the liquid state（each ion is concentrated at a specific location in the ion system） and then to the crystal state（each ion is subjected to a fixed motion track）.These results are conducive to long-term storage and precise control,motion effect suppression,high-efficiency cooling,and increasing the precision of spectroscopy for a 3 D ion system.

Measurement and analyses of the mean effective ion charge in the centre of tokamak discharges

There are two different definitions for specifying the mean effective ion charge Zeff in plasmas： a） from the Spizer electrical resistivity of the plasma and b） from bremsstrahlung radiation losses of the plasma. In this paper Zeff in the centre of tokamak ohmic discharges has been determined from information on sawtooth-relaxations of the steady state plasma, based on the analysis for the power balance of the plasma electrons in the plasma centre during the period of recovery after the sawtooth crashes. This method is found to supply reliable results for tokamak parameters. While its application requires some efforts in data analysis, it can provide a reliable determination of Zeff, independent of the information from bremsstrahlung radiation losses of the plasma.

Hybridization Effects Revealed by Angle-Resolved Photoemission Spectroscopy in Heavy-Fermion Ce2IrIn8

We utilize high-resolution resonant angle-resolved photoemission spectroscopy(ARPES)to study the band structure and hybridization effect of the heavy-fermion compound Ce2 IrIn8.We observe a nearly flat band at the binding energy of 7 meV below the coherent temperature Tcoh^40 K,which characterizes the electrical resistance maximum and indicates the onset temperature of hybridization.However,the Fermi vector and the Fermi surface volume have little change around Tcoh,which challenges the widely believed evolution from a hightemperature small Fermi surface to a low-temperature large Fermi surface.Our experimental results of the band structure fit well with the density functional theory plus dynamic mean-field theory calculations.

Effect of Residual Charge Carrier on the Performance of a Graphene Field Effect Transistor

The temperature-dependent effect of residual charge carrier （no）, at the Dirac point, on mobility is studied. We fabricate and characterize a graphene field effect transistor （GFET） using 7nm TiO2 as the top-gate dielectric. The temperature-dependent gate voltage-drain current and room temperature gate capacitance are measured to extract the carrier mobility and to estimate the quantum capacitance of the GFET. The device shows the mobility value of gOO cm^2 /V.s at room temperature and it decreases to 45 cm^2 /V.s for 20 K due to the increase of n0. These results indicate that the phonon scattering is not the dominant process for the unevenness dielectric layer while the coulomb scattering by charged impurities degrades the device characteristically at low temperature.

Total ionizing dose effect in an input/output device for flash memory

Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.

Influence of shape effect on dynamic surface charge transport mechanism of cellular electret after corona discharge

Surface charge accumulation and transport on cellular polypropylene play an important role in nanogenerators,which could have a potential impact on energy harvesting and wearable devices for zero carbon energy systems and the internet of things.Different shapes have different charge accumulation and decay characteristics of the polymer.Therefore,we studied the influence of the sample’s shape on the surface charge decay by experiment and modeling.The surface potential of square and circular cellular polypropylene was measured by a two-dimensional surface potential measurement system with electrostatic capacitive probe.The experimental result shows that the surface potential distribution of the square sample dissipates non-uniformly from the bell shape to a one-sided collapsed shape,while that of the circular sample dissipates uniformly from the bell shape to the crater-like shape.Moreover,the simulated results of the initial surface potential distributions of the square and circular cellular polypropylene are consistent with the experimental results.The investigation demonstrates that the charge transport process is correlated with the shape of the sample,which provides significant reference for designing electret material used for highly efficient nanogenerators.

Space Charge Effects in CSL Gauge——with previously assumed charge distribution

The "cascade static lens （CSL） gauge" has a high sensitivity（S） because the emitted electrons repeat the go and back oscillation before they are received by the electrodes. (S=18.6 Pa-1 (2480 Torr-1 in a