Thin films of silicon carbide nitride （SiCN） were prepared on （111） oriented silicon substrates by pulsed high-energy density plasma （PHEDP）. The evolution of the chemical bonding states between silicon, nitroge...Thin films of silicon carbide nitride （SiCN） were prepared on （111） oriented silicon substrates by pulsed high-energy density plasma （PHEDP）. The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C 1s and N 1s spectra shift to lower binding energy due to the formation of C--Si and N--Si bonds. The Si--C--N bonds were observed in the deconvolved C ls and N ls spectra. The X-ray diffractometer （XRD） results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy （SEM）.展开更多
文摘Thin films of silicon carbide nitride （SiCN） were prepared on （111） oriented silicon substrates by pulsed high-energy density plasma （PHEDP）. The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C 1s and N 1s spectra shift to lower binding energy due to the formation of C--Si and N--Si bonds. The Si--C--N bonds were observed in the deconvolved C ls and N ls spectra. The X-ray diffractometer （XRD） results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy （SEM）.
