We investigated microstructure morphologies of three asphalts（SK, Karamay, and Esso） used in China using atomic force microscopy（AFM）. The topography and phase contrast images were obtained. Topographic profile an...We investigated microstructure morphologies of three asphalts（SK, Karamay, and Esso） used in China using atomic force microscopy（AFM）. The topography and phase contrast images were obtained. Topographic profile and three dimensional images were described. Roughnesses of microstructure were calculated. And the chemical compositions of asphalt were tested to explain the microstructural mechanism of the asphalt. The results show that the topography and phase image in atomic force microscopy are appropriate to evaluate the microstructure of the asphalt binder. There are significant differences in microstructural morphologies including bee-like structure, topographic profile, 3D image, and roughness for three asphalts in this study. There are three different phases in microstructure of asphalt binder. The oil source and chemical composition of asphalt, especially asphaltenes content have a great influence on the microstructure.展开更多
The scanning force microscopy (SFM)/chemical force microscopy (CFM) were used to study the growth of grafted polyacrylamide (PAM) chains onto polyethylene (PE)-film with varying grafting time.Results from the CFM reve...The scanning force microscopy (SFM)/chemical force microscopy (CFM) were used to study the growth of grafted polyacrylamide (PAM) chains onto polyethylene (PE)-film with varying grafting time.Results from the CFM reveal reduced interaction between the probe and areas with grafted-PAM on the surface.The topography and the friction trace- minus-retrace (TMR) images are complementary to one another resulting from the reduced interaction of the probe that has specificity to chemical domains.展开更多
Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic de...Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.展开更多
This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [1120] direction by low pressure horizontal hot-wall chemical vapou...This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [1120] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580 ℃ and 10^4 Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy （AFM） and scanning electron microscopy （SEM）. Fourier transform infrared spectroscopy （FTIR） and x-ray diffraction （XRD） are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×10^14 cm^-3 obtained by C-V measurements. Schottky barrier diodes （SBDs） are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.展开更多
基金Funded by the National Natural Science Foundation of China(Nos.51408287,and 51668038)the Rolls Supported by Program for Changjiang Scholars and Innovative Research Team in University(IRT_15R29)+2 种基金the Distinguished Young Scholars Fund of Gansu Province(1606RJDA318)the Natural Science Foundation of Gansu Province(1506RJZA064)the Excellent Program of Lanzhou Jiaotong University(201606)
文摘We investigated microstructure morphologies of three asphalts（SK, Karamay, and Esso） used in China using atomic force microscopy（AFM）. The topography and phase contrast images were obtained. Topographic profile and three dimensional images were described. Roughnesses of microstructure were calculated. And the chemical compositions of asphalt were tested to explain the microstructural mechanism of the asphalt. The results show that the topography and phase image in atomic force microscopy are appropriate to evaluate the microstructure of the asphalt binder. There are significant differences in microstructural morphologies including bee-like structure, topographic profile, 3D image, and roughness for three asphalts in this study. There are three different phases in microstructure of asphalt binder. The oil source and chemical composition of asphalt, especially asphaltenes content have a great influence on the microstructure.
基金the NSTDA for Science and Technology Scholars funding and the MTEC Young Research Group funding MT-NS-45-POL-14-06-G.
文摘The scanning force microscopy (SFM)/chemical force microscopy (CFM) were used to study the growth of grafted polyacrylamide (PAM) chains onto polyethylene (PE)-film with varying grafting time.Results from the CFM reveal reduced interaction between the probe and areas with grafted-PAM on the surface.The topography and the friction trace- minus-retrace (TMR) images are complementary to one another resulting from the reduced interaction of the probe that has specificity to chemical domains.
文摘Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60876061)13115 Innovation Engineering Program (Grant No. 2008ZDKG-30)the Advanced Research Program (Grant No. 51308040302)
文摘This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [1120] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580 ℃ and 10^4 Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy （AFM） and scanning electron microscopy （SEM）. Fourier transform infrared spectroscopy （FTIR） and x-ray diffraction （XRD） are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×10^14 cm^-3 obtained by C-V measurements. Schottky barrier diodes （SBDs） are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.
