Fabrication of Graphene/Cu Composite by Chemical Vapor Deposition and Effects of Graphene Layers on Resultant Electrical Conductivity

Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the problem of how to control graphene to form desired Gr/Cu composite is not well solved. This paper aims at exploring the best parameters for preparing graphene with different layers on Cu foil by chemical vapor deposition(CVD)method and studying the effects of different layers graphene on Gr/Cu composite’s electrical conductivity. Graphene grown on single-sided and double-sided copper was prepared for Gr/Cu and Gr/Cu/Gr composites. The resultant electrical conductivity of Gr/Cu composites increased with decreasing graphene layers and increasing graphene volume fraction. The Gr/Cu/Gr composite with monolayer graphene owns volume fraction of less than 0.002%,producing the best electrical conductivity up to59.8 ×10^(6)S/m,equivalent to 104.5% IACS and 105.3% pure Cu foil.

Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition(CVD) Method

A procedure for purification of single walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition(CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.

GROWTH MECHANISM OF TiC WHISKERS PREMRED BY A MODIFIED CHEMICAL VAPOR DEPOSITION METHOD

High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciable effect on the whisker growth.The whisker orientations and morphology are determined by X-my diffraction (XRD),scanning electron micmpmph (SEM) and transmission electron microgmph (TEM).In addition to the spherical tips, spiral growth microsteps and obvious terraces are observed at the tips and side faces of whiskers in the present eoperiment. The whiskers grow mostly along (100) direction. The whisker growth mechanism is discussed in detail.

Science Letters:Development of supported boron-doping TiO_2 catalysts by chemical vapor deposition

In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. Boron atoms were successfully doped into the lattice of TiO2 through CVD, as evidenced from XPS analysis. B-doped TiO2 coating catalysts showed drastic and strong absorption in the visible light range with a red shift in the band gap transition. This novel B-TiO2 coating photocatalyst showed higher photocatalytic activity in methyl orange degradation under visible light irradiation than that of the pure TiO2 photocatalyst.

Fibrous TiO_2 prepared by chemical vapor deposition using activated carbon fibers as template via adsorption,hydrolysis and calcinations

TiO2 fibers were prepared via alternatively introducing water vapor and Ti precursor carried by N2 to an APCVD （chemical vapor deposition under atmospheric pressure） reactor at ≤200 ℃. Activated carbon fibers （ACFs） were used as templates for deposition and later removed by calcinations. The obtained catalysts were characterized by scanning electron micros- copy （SEM）, transmission electron microscopy （TEM）, Brunauer, Emmett and Teller （BET） and X-ray diffraction （XRD） analysis The pores within TiO2 fibers included micro-range and meso-range, e.g., 7 nm, and the specific surface areas for TiO2 fibers were 141 m^2/g and 148 m^2/g for samples deposited at 100 ℃ and 200℃ （using ACFI700 as template）, respectively. The deposition temperature significantly influenced TiO2 morphology. The special advantages of this technique for preparing porous nano-material include no consumption of organic solvent in the process and easy control of deposition conditions and speeds.

Synthesis of flower-like WS_(2) by chemical vapor deposition

Flower-like tungsten disulfide(WS_(2))with a diameter of 5-10μm is prepared by chemical vapor deposition(CVD).Scanning electron microscopy(SEM),energy dispersive spectrometer(EDS),Raman spectroscopy,and ultraviolet-visible(UV-vis)spectroscopy are used to characterize its morphological and optical properties,and its growth mechanism is discussed.The key factors for the formation of flower-like WS_(2)are determined.Firstly,the cooling process causes the generation of nucleation dislocations,and then the"leaf"growth of flower-like WS_(2)is achieved by increasing the temperature.

Monolayer MoS_(2)of high mobility grown on SiO_(2)substrate by two-step chemical vapor deposition

We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of the pre-synthesized Mo O_(3)flakes on the mica substrate compared to Mo O_(3)powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Furthermore,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality Mo S_(2)monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the Si O_(2)substrate and is essential to further development of the TMDs-related integrated devices.

Study of filament performance in heat transfer and hydrogen dissociation in diamond chemical vapor deposition

Hot-filament chemical vapor deposition ( HFCVD) is a promising method for commercial production of diamond films. Filament performance in heat transfer and hydrogen decomposition in reactive environment was investigated. Power consumption by the filament in vacuum, helium and 2% CH4/H2 was experimentally determined in temperature range 1300℃-2200℃. Filament heat transfer mechanism in C-H reactive environment was calculated and analyzed. The result shows that due to surface carburization and slight carbon deposition, radiation in stead of hydrogen dissociation, becomes the largest contributor to power consumption. Filament-surface dissociation of H2 was observed at temperatures below 1873K, demonstrating the feasibility of diamond growth at low filament temperatures. The effective activation energies of hydrogen dissociation on several clean refractory flaments were derived from power consumption data in literatures. They are all lower than that of thermal dissociation of hydrogen revealing the nature of catalytic dissociation of hydrogen on filament surface. Observation of substrate temperature suggested a weaker role of atomic hydrogen recombination in heating substrates in C-H environment than in pure hydrogen.

C-H-F氛围下金刚石薄膜的低温CVD生长过程分析

基于第一性原理的密度泛函理论对C-H-F氛围下低温CVD金刚石薄膜的生长过程进行仿真分析,计算H、F原子在氢终止金刚石表面发生萃取反应的吸附能、反应热与反应能垒,并分析CF_(3)、CF_(2)、CF 3种生长基团在带有活性位点基底上的吸附。结果表明:与H原子相比,F原子更容易在氢终止金刚石表面萃出H,并以HF形式脱附,且在C-H-F氛围下有利于在低温时产生更多的活性位点;CF_(3)、CF_(2)、CF基团在吸附后的结构和吸附能绝对值都更有利于金刚石相的生成,适当提高CF_(3)、CF_(2)、CF基团的浓度有助于实现金刚石相的更高速率生长。

Effect of Substrate Temperature on the Selective Deposition of Diamond Films

Selective deposition of diamond film on patterned Si (100) substrates has been achieved by using microwave plasma chemical vapor deposition (MPCVD) method. The films have been characterized by scanning electron microscope (SEM) and Raman spectrum. The influence of substrate temperature on the nucleation behavior of diamond was discussed in detail and the optimized deposition condition has been obtained.

Preparation of Large-Scale Double-Side BDD Electrodes and Their Electrochemical Performances

Boron doped diamond(BDD)performs well in electrochemical oxidation for organic pollutants thanks to its wide electrochemical window and superior chemical stability.We presented a method to obtain well-adherent large-scale BDD/Nb electrode by the modified hot filament chemical vapor deposition system(HFCVD).SiC particles were sand blasted to enhance the adhesion of BDD coating.The BDD coating was then deposited on both sides of Nb which was placed vertically and closely with filament grids on both sides.The BDD/Nb electrodes had no deformation because the thermal deformations of the BDD films on both sides of the Nb substrate conteracted each other during cooling process after deposition.The surface morphology and purity of the BDD/Nb electrode were analyzed by Raman and scanning elestron microscope(SEM)techniques.Scratch test was used to investigate the adhesion of BDD films.The electrochemical performances were measured by cyclic voltammetry test.The BDD electrode at the B/C ratio of 2 000×10^(-6) held a higher oxygen evolution potential thanks to its high sp3 carbon content.Accelerated life test illustrated that the sandblasting pretreatment obviously enhanced the adhesion of BDD coating which resulted in a longer service duration than the un-sandblasted one.

一步TCVD法制备大面积碳纳米管冷阴极及其场致发射性能研究

本文提出一步热化学气相沉积法(TCVD)热解二茂铁,并直接在硅衬底上制备大面积(1 cm^(2))、高质量碳纳米管(CNTs)场致发射冷阴极阵列的制备工艺.通过调控二茂铁的热解温度(650~1000℃),获得了最佳的二茂铁的碳转化效率以及高结晶度的碳纳米管阵列.研究了不同热解温度下制备的碳纳米管微观形貌及其对场致发射性能的影响机制.场致发射实验测试表明在热解温度850℃条件下制备的碳纳米管冷阴极其开启电场(10μA/cm^(2))和阈值电场(1 mA/cm^(2))分别为1.32 V/μm和2.64 V/μm,最大电流密度为14.51 mA/cm^(2),对应的场增强因子为13267,表现出良好的场发射性能.本文提出的一步制备碳纳米管冷阴极阵列的制备方法无需任何蚀刻气体或光刻图案工艺,该方法安全、经济、可重复性好,在碳纳米管场发射冷阴极领域具有广阔的应用前景.

CVD SiC致密表面涂层制备及表征

考察了沉积温度、稀释气体流量对化学气相沉积(CVD)SiC涂层的显微结构及晶体结构的影响,分析得出:沉积温度为1100℃,稀释气体Ar流量<400mL/min时,制备的SiC涂层晶体结构完整、致密。在该制备工艺条件下沉积的SiC涂层密度为3.204g/cm3,显微硬度为HV4459.2,弹性模量为471GPa,涂层具有优异的光学加工性能,光学加工后表面粗糙度为0.429nm,能满足光学应用的要求。

红外用CVD ZnS多晶材料的研制

论述了制备红外用CVD ZnS多晶材料的化学气相沉积工艺和热等静压处理工艺。针对CVD ZnS多晶材料具备优良的光学和力学性能,采用化学气相沉积工艺和热等静压处理技术成功研制出大尺寸多晶材料,其最大尺寸达到250 mm×15 mm。测试了CVD ZnS样品的各项光学、力学性能指标。样品的全波段透过率均接近ZnS材料的本征水平,折射指数均匀性优于2×10-5,在1.06μm的吸收系数为2×10-3cm-1,抗弯强度达到104 MPa。

流态床CVD法纳米氮化硅粉体的制备

采用硅烷和氨气在立式双温区流态床中化学气相沉积,制备了形状规则的球状无定形氮化硅纳米粉体,并利用X射线衍射(XRD)、透射电镜(TEM)和傅立叶红外(FTIR)研究了该纳米粉体的形貌、成分和物相．讨论了该流态床法制备纳米氮化硅的关键因素,并得到流态床中制备氮化硅纳米粉体的优化工艺参数．

LPCVD水解法制备TiO_2薄膜

本文利用LPCVD法水解四异丙醇钛 (TTIP)制备TiO2 薄膜 ,研究了制备过程中水解TTIP的反应动力学。通过对沉积温度和沉积率关系的研究 ,计算出TTIP水解反应表观活化能为 5 9 85kJ mol。沉积温度不仅影响反应速率 ,还对TiO2 薄膜结构、表面形貌有决定性的作用。XRD和Raman分析表明 :TTIP水解法制备TiO2 薄膜 ,薄膜结构主要依赖于沉积温度。 180℃～ 2 2 0℃沉积TiO2 薄膜为非晶态 ,2 40℃～ 3 0 0℃沉积为锐钛矿和非晶态混杂结构。在水分压对TTIP水解反应影响的研究中发现 ,水分压为零时 ,TTIP发生热解反应 ,TiO2 沉积率不为零 ,热解反应 2 40℃无锐钛矿特征峰出现。这说明水解反应制备TiO2 有利于降低锐钛矿的生长温度。氧分子的加入可以消除TiO2 薄膜表面的“针孔”。

应用CVD金刚石涂层工具研磨单晶蓝宝石

通过热丝化学气相沉积(HFCVD)法制备了具有球状晶结构、棱锥形晶结构和棱柱形晶结构等3种不同表面特征的化学气相沉积(CVD)金刚石涂层工具,以提高其研磨效率。通过正交实验法研究了金刚石涂层晶粒形态、载荷、工作台转速、研磨时间等4个工艺参数对蓝宝石材料去除率和表面粗糙度的影响。结果表明:金刚石涂层的晶粒形态对材料去除率和表面粗糙度影响较大;球状晶结构金刚石涂层切向力较小,棱柱形晶结构金刚石涂层切向力较大;选择棱柱形晶CVD金刚石涂层工具研磨蓝宝石,在研磨加工参数为载荷0.15 MPa、转速100 r/min、研磨时间3 min时,其材料去除率为0.397μm/min,表面粗糙度为0.354μm。结果表明:提出的CVD金刚石涂层工具可用于进一步加工、研磨蓝宝石切片,去除其表面划痕,从而改善工件表面质量。

CVD金刚石厚膜刀具及应用研究

热丝CVD法沉积金刚石厚膜为全晶质纯多晶金刚石材料,是制造切削刀具的理想材料。本文针对国内外CVD金刚石厚膜焊接刀具研究与应用中存在的关键技术问题,结合我所近期相关技术研究进展,重点介绍了其制造工艺及关键技术。

温度对CVD-TaC涂层组成、形貌与结构的影响

利用TaCl52C3H62H22Ar反应体系,用化学气相沉积法(CVD)成功地在C/C复合材料表面沉积TaC涂层及C2TaC复合涂层。研究了温度对TaC涂层的相组成和表面形貌的影响以及CVD2TaC涂层的沉积机理。结果表明:在1373～1673K温度范围内能够在C/C复合材料表面制备碳化钽涂层,它由TaC和游离碳组成。提高沉积温度和H2/C3H6的流量比,TaC涂层中游离碳的含量减少;随着沉积温度的升高,TaC涂层的颗粒尺寸增大,均匀程度下降;在1573K时颗粒间出现明显的烧结界面,结构致密无裂纹。制备出成分波动的C2TaC复合涂层,该涂层与基体间具有良好的机械相容性。分析了低应力、无裂纹TaC复合涂层的形成机制。