Fabrication of Graphene/Cu Composite by Chemical Vapor Deposition and Effects of Graphene Layers on Resultant Electrical Conductivity

Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the problem of how to control graphene to form desired Gr/Cu composite is not well solved. This paper aims at exploring the best parameters for preparing graphene with different layers on Cu foil by chemical vapor deposition(CVD)method and studying the effects of different layers graphene on Gr/Cu composite’s electrical conductivity. Graphene grown on single-sided and double-sided copper was prepared for Gr/Cu and Gr/Cu/Gr composites. The resultant electrical conductivity of Gr/Cu composites increased with decreasing graphene layers and increasing graphene volume fraction. The Gr/Cu/Gr composite with monolayer graphene owns volume fraction of less than 0.002%,producing the best electrical conductivity up to59.8 ×10^(6)S/m,equivalent to 104.5% IACS and 105.3% pure Cu foil.

Uniform deposition of ultra-thin TiO_(2) film on mica substrate by atmospheric pressure chemical vapor deposition: Effect of precursor concentration

The performance of pearlescent pigment significantly affected by the grain size and the roughness of deposited film. The effect of TiCl_(4) concentration on the initial deposition of TiO_(2) on mica by atmospheric pressure chemical vapor deposition(APCVD) was investigated. The precursor concentration significantly affected the deposition and morphology of TiO_(2) grains assembling the film. The deposition time for fully covering the surface of mica decreased from 120 to 10 s as the TiCl_(4) concentration increased from 0.38%to 2.44%. The grain size increased with the TiCl_(4) concentration. The AFM and TEM analysis demonstrated that the aggregation of TiO_(2) clusters at the initial stage finally result to the agglomeration of fine TiO_(2) grains at high TiCl_(4) concentrations. Following the results, it was suggested that the nucleation density and size was easy to be adjusted when the TiCl_(4) concentration is below 0.90%.

Controllable growth of wafer-scale PdS and PdS_(2) nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

Palladium(Pd)-based sulfides have triggered extensive interest due to their unique properties and potential applications in the fields of electronics and optoelectronics.However,the synthesis of large-scale uniform PdS and PdS_(2)nanofilms(NFs)remains an enormous challenge.In this work,2-inch wafer-scale PdS and PdS_(2) NFs with excellent stability can be controllably prepared via chemical vapor deposition combined with electron beam evaporation technique.The thickness of the pre-deposited Pd film and the sulfurization temperature are critical for the precise synthesis of PdS and PdS_(2) NFs.A corresponding growth mechanism has been proposed based on our experimental results and Gibbs free energy calculations.The electrical transport properties of PdS and PdS_(2) NFs were explored by conductive atomic force microscopy.Our findings have achieved the controllable growth of PdS and PdS_(2) NFs,which may provide a pathway to facilitate PdS and PdS_(2) based applications for next-generation high performance optoelectronic devices.

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900℃in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 - 20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% - 80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.

Structural and optical properties of tellurium films obtained by chemical vapor deposition(CVD)

Tellurium thin films were prepared by the chemical vapor deposition method. The structure, surface morphology and optical properties of the Te thin films were analyzed by powder X-ray diffraction, scanning electron microscopy, FTIR transmission, UV/VIS/NIR transmission and reflectance. The results show that the films structural and optical properties are influenced by many factors such as film thickness, crystallite size and substrate temperature. The films as thick as 111?133 nm have high IR transmission across the full 8?13 μm band and highly blocking in the solar spectral region elsewhere, which indicates that Te films thickness in this region can be used as good solar radiation shields in radiative cooling devices.

C-H-F氛围下金刚石薄膜的低温CVD生长过程分析

基于第一性原理的密度泛函理论对C-H-F氛围下低温CVD金刚石薄膜的生长过程进行仿真分析,计算H、F原子在氢终止金刚石表面发生萃取反应的吸附能、反应热与反应能垒,并分析CF_(3)、CF_(2)、CF 3种生长基团在带有活性位点基底上的吸附。结果表明:与H原子相比,F原子更容易在氢终止金刚石表面萃出H,并以HF形式脱附,且在C-H-F氛围下有利于在低温时产生更多的活性位点;CF_(3)、CF_(2)、CF基团在吸附后的结构和吸附能绝对值都更有利于金刚石相的生成,适当提高CF_(3)、CF_(2)、CF基团的浓度有助于实现金刚石相的更高速率生长。

具有多MO喷嘴垂直MOCVD反应腔外延层厚度均匀性的优化理论及应用

金属有机物化学气相淀积(metal organic chemical vapor deposition,MOCVD)作为异质结半导体材料外延的关键手段,其外延层厚度均匀性会直接影响产品的良率.本文将理论与实验相结合,针对3个MO源喷嘴的垂直反应腔MOCVD,将各MO源喷嘴等效为蒸发面源,并引入一等效高度来涵盖MOCVD的相关外延参数,建立外延层厚度与各MO源喷嘴流量间的定量关系,设计并利用EMCORE D125 MOCVD系统外延生长了AlGaAs谐振腔结构,根据实验测得的外延层厚度分布结果,利用最小二乘法对模型参数进行了拟合提取,基于提取的模型参数,给出了优化外延层厚度均匀性的方法.4 in(1 in=2.54 cm)外延片mapping反射谱的统计结果为,腔模的平均波长为651.89 nm,标准偏差为1.03 nm,厚度均匀性达到0.16%.同时外延生长了GaInP量子阱结构,4 in外延片mapping荧光光谱的统计结果为,峰值波长平均值为653.3 nm,标准偏差仅为0.46 nm,厚度均匀性达到0.07%.本文提出的调整外延层厚度均匀性的方法具有简单、有效、快捷的特点,且可以进一步推广至具有4个MO喷嘴以上的垂直反应腔MOCVD系统.

GROWTH MECHANISM OF TiC WHISKERS PREMRED BY A MODIFIED CHEMICAL VAPOR DEPOSITION METHOD

High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciable effect on the whisker growth.The whisker orientations and morphology are determined by X-my diffraction (XRD),scanning electron micmpmph (SEM) and transmission electron microgmph (TEM).In addition to the spherical tips, spiral growth microsteps and obvious terraces are observed at the tips and side faces of whiskers in the present eoperiment. The whiskers grow mostly along (100) direction. The whisker growth mechanism is discussed in detail.

Microstructure evolution and mechanical properties of Ti-B-N coatings deposited by plasma-enhanced chemical vapor deposition

Ternary Ti-B-N coatings were synthesized on AISI 304 and Si wafer by plasma-enhanced chemical vapor deposition (PECVD) technique using a gaseous mixture of TiCl4,BCl3,H2,N2,and Ar.By virtue of X-ray diffraction analysis,X-ray photoelectron spectroscopy,scanning electron microscope,and high-resolution transmission electron microscope,the influences of B content on the microstructure and properties of Ti B N coatings were investigated systematically.The results indicated that the microstructure and mechanical properties of Ti-B-N coatings largely depend on the transformation from FCC-TiN phase to HCP-TiB2 phase.With increasing B content and decreasing N content in the coatings,the coating microstructure evolves gradually from FCC-TiN/a-BN to HCP-TiB2 /a-BN via FCC-TiN+HCP-TiB2/a-BN.The highest microhardness of about 34 GPa is achieved,which corresponds to the nanocomposite Ti-63%B-N (mole fraction) coating consisting of the HCP-TiB2 nano-crystallites and amorphous BN phase.The lowest friction-coefficient was observed for the nanocomposite Ti-41%B-N (mole fraction) coating consisting of the FCC-TiN nanocrystallites and amorphous BN

Texture Evolutions in Fe-6.5%Si Produced by Rapid Solidification and Chemical Vapor Deposition

Fe-Si ribbons and thin sheets with 6.5%Si content were prepared by means of the single roller rapid solidification and chemical vapor deposition (CVD), respectively. The initial textures of rapidly solidified Fe-6.5%Si ribbons were characteristic of the {100} fiber-type, which became weakened during primary recrystallization in various atmospheres. At the stage of secondary recrystallization, the {100} texture formed in Ar and the {110} texture in hydrogen, while there occurred a texture transformation from the {100} type to the {110} type in vacuum with the increase of annealing temperature. For Fe-6.5%Si sheets prepared by Si deposition in cold-rolled Fe-3%Si matrix sheets, their textures were dominated by the η-fiber (<001>//RD) with the maximum density at the {120}<001> orientations. After homogenization annealing, the η-fiber could evolve into the {130}<001> type or become more concentrated on the {120}<001> orientations, depending on the cold rolling modes of Fe-3%Si matrix sheets.

MOCVD生长的中红外高功率量子级联激光器

量子级联激光器(QCL)是中远红外波段的优质光源,具有体积小、重量轻、电光转化效率高等诸多优势,在传感、通信和国防等领域有重要的应用前景。金属有机物化学气相沉积(MOCVD)技术作为更高效的外延方式,应发展适用于QCL的MOCVD外延生长技术以满足快速增长的市场需求。本文报道了全结构由MOCVD技术外延的QCL,通过将传统的“双声子共振”有源区结构修订为“单声子共振结合连续态抽取”结构,减少了电子的热逃逸,改善了器件的温度特性。针对该结构,进一步改变了有源区的掺杂浓度,并对比了不同掺杂浓度对器件性能的影响。腔长8 mm、平均脊宽约6.7μm的较高掺杂有源区器件在20℃下连续输出功率达3.43 W,中心波长约4.6μm,电光转化效率达13.1%;8 mm腔长的较低掺杂有源区器件在20℃下连续输出功率达2.73 W,中心波长约4.5μm,阈值电流仅0.56 A,峰值电光转化效率达15.6%。器件的输出功率和电光转化效率较之前文献报道的MOCVD制备的QCL有明显提高。该结果表明,MOCVD完全具备生长高功率QCL的能力,这对推动QCL的技术进步具有重要意义。

Carbon nanotubes for supercapacitors:Consideration of cost and chemical vapor deposition techniques

In this topic, we first discussed the requirement and performance of supercapacitors using carbon nanotubes （CNTs） as the electrode, including specific surface area, purity and cost. Then we reviewed the preparation technique of single wailed CNTs （SWNTs） in relatively large scale by chemical vapor deposition method. Its catalysis on the decomposition of methane and other carbon source, the reactor type and the process control strategies were discussed. Special focus was concentrated on how to increase the yield, selectivity, and purity of SWNTs and how to inhibit the formation of impurities, including amorphous carbon, multiwalled CNTs and the carbon encapsulated metal particles, since these impurities seriously influenced the performance of SWNTs in supercapacitors. Wish it be helpful to further decrease its product cost and for the commercial use in supercapacitors.

Mg-doped ZnO radial spherical structures via chemical vapor deposition

Mg-doped ZnO radial spherical structures with nanorods grown on both sides of the spherical shell were successfully prepared via chemical vapor deposition （CVD） of Zn and Mg powders in the absence of a catalyst. The structures associated with different growth temperatures （700, 800, and 850°C） were monitored by scanning electron microscopy （SEM）, and the result shows that the length of the nanorods increase progressively with the growth temperature increasing. X-ray diffraction （XRD） shows that the as-obtained samples can be indexed to high crystallinity with wurtzite structure. The growth of the nanostructures mainly depends on the formation of sphere-like Mg-doped Zn droplets before adding oxygen. Photoluminescence （PL） spectra that show a 39 meV blue shift indicates that the band gap becomes large, because Mg substitutes Zn in the lattice.

Microwave Plasma Chemical Vapor Deposition of Diamond Films on Silicon From Ethanol and Hydrogen

Diamond films with very smooth surface and good optical quality have been deposited onto silicon substrate using microwave plasma chemical vapor deposition (MPCVD) from a gas mixture of ethanol and hydrogen at a low substrate temperature of 450 ℃. The effects of the substrate temperature on the diamond nucleation and the morphology of the diamond film have been investigated and observed with scanning electron microscopy (SEM). The microstructure and the phase of the film have been characterized using Raman spectroscopy and X-ray diffraction (XRD). The diamond nucleation density significantly decreases with the increasing of the substrate temperature. There are only sparse nuclei when the substrate temperature is higher than 800 ℃ although the ethanol concentration in hydrogen is very high. That the characteristic diamond peak in the Raman spectrum of a diamond film prepared at a low substrate temperature of 450 ℃ extends into broadband indicates that the film is of nanophase. No graphite peak appeare

Technical Challenges and Progress in Fluidized Bed Chemical Vapor Deposition of Polysilicon

为多晶硅的生产的各种各样的方法为降低生产费用和精力消费被建议了，并且提高生产率，它为工业应用程序是批评的。使流体化的床化学药品蒸汽免职(FBCVD ) 方法是常规的，而是在在罚款的讨厌的形成的 FBCVD 结果的 silane 的同类的反应的一种很有希望的选择，它将影响产品质量和产量。有一些另外的问题，例如加热由于反应堆和加热器的墙上的不希望得到的多晶硅免职的退化。这篇文章主要为解决上述问题在多晶的硅和研究地位的 FBCVD 上考察工艺的发展。它也鉴别对处理和原则的很多挑战应该在一个 FBCVD 反应堆的设计被跟随。

Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane

The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or low-pressure chemical vapor infiltration(LPCVI).In the field of ceramic matrix composites(CMCs),methyltrichlorosilane(CH3 SiCl3,MTS)is the most widely used source gas system for SiC,because stoichiometric SiC deposit can be facilitated at 900°C–1300°C.However,the reliability and accuracy of existing numerical models for these processing conditions are rarely reported.In this study,a comprehensive transport model was coupled with gas-phase and surface kinetics.The resulting gas-phase kinetics was confirmed via the measured concentration of gaseous species.The relationship between deposition rate and 24 gaseous species has been effectively evaluated by combining the special superiority of the novel extreme machine learning method and the conventional sticking coefficient method.Surface kinetics were then proposed and shown to reproduce the experimental results.The proposed simulation strategy can be used for different material systems.

重掺硅片表面APCVD法生长SiO_(2)薄膜的致密性

在硅片加工过程中,金属杂质的存在会增大pn结器件的漏电流,甚至直接导致pn结禁带宽度变窄,为防止出现硅外延过程中造成的自掺杂现象,通常在硅片表面生长一层高致密性的SiO_(2)薄膜。基于常压化学气相沉积(APCVD)法在6英寸(1英寸≈2.54 cm)n型硅片表面生长SiO_(2)薄膜,首先研究不同沉积温度、SiH_(4)和O_(2)的体积流量比对沉积速率和SiO_(2)薄膜致密性的影响,进一步探究了不同退火温度对SiO_(2)薄膜致密性的影响,以期获得致密性较高的SiO_(2)薄膜。采用HF腐蚀速率法表征其致密性,采用扫描电子显微镜(SEM)观察SiO_(2)薄膜的表面形貌,采用F50膜厚测试仪测试SiO_(2)薄膜的厚度。结果表明,沉积温度为400℃,SiH_(4)和O_(2)的体积流量比为1∶10,退火温度为1100℃时,制备的SiO_(2)薄膜的致密性为0.096 nm/s(采用体积分数为1%的HF腐蚀)。

Science Letters:Development of supported boron-doping TiO_2 catalysts by chemical vapor deposition

In this study, supported nonmetal (boron) doping TiO2 coating photocatalysts were prepared by chemical vapor deposition (CVD) to enhance the activity under visible light irradiation and avoid the recovering of TiO2. Boron atoms were successfully doped into the lattice of TiO2 through CVD, as evidenced from XPS analysis. B-doped TiO2 coating catalysts showed drastic and strong absorption in the visible light range with a red shift in the band gap transition. This novel B-TiO2 coating photocatalyst showed higher photocatalytic activity in methyl orange degradation under visible light irradiation than that of the pure TiO2 photocatalyst.

Friction Behaviors of the Hot Filament Chemical Vapor Deposition Diamond Film under Ambient Air and Water Lubricating Conditions

The friction behavior of the hot filament chemical vapor deposition（HFCVD） diamond film plays a critical role on its applications in mechanical fields and largely depends on the environment. Studies on the tribological properties of HFCVD diamond films coated on Co-cemented tungsten carbide （WC-Co） substrates are rarely reported in available literatures, especially in the water lubricating conditions. In this paper, conventional microcrystalline diamond（MCD） and fine-grained diamond（FGD） films are deposited on WC-Co substrates and their friction properties are evaluated on a reciprocating ball-on-plate tribometer, where they are brought to slide against ball-bearing steel and copper balls in dry and water lubricating conditions. Scanning electron microscopy（SEM）, atomic force microscopy（AFM）, surface profilometer and Raman spectroscopy are adopted to characterize as-deposited diamond films; SEM and energy dispersive X-ray（EDX） are used to investigate the worn region on the surfaces of both counterface balls and diamond films. The research results show that the friction coefficient of HFCVD diamond films always starts with a high initial value, and then gradually transits to a relative stable state. For a given counterface and a sliding condition, the FGD film presents lower stable friction coefficients by 0.02-0.03 than MCD film. The transferred materials adhered on sliding interface are supposed to have predominate effect on the friction behaviors of HFCVD diamond films. Furthermore, the effect of water lubricating on reducing friction coefficient is significant. For a given counterpart, the stable friction coefficients of MCD or FGD films reduce by about 0.07-0.08 while sliding in the water lubricating condition, relative to in dry sliding condition. This study is beneficial for widespread applications of HFCVD diamond coated mechanical components and adopting water lubricating system, replacing ofoil lubricating, in a variety of mechanical processing fields to implement the green production process.

High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors. Low ohmic contact resistance of 0.15Ω.mm is obtained. It is found that the sidewall obliquity near the regrown interface induced by the plasma dry etching has great influence on the total contact resistance. The fabricated device with a 100-nm T-shaped gate demonstrates a maximum drain current density of 0.95 A/mm at Vgs = 1 V and a maximum peak extrinsic transcondutance Gm of 216mS/ram. Moreover, a current gain cut-off frequency fT of 115 GHz and a maximum oscillation frequency fmax of 127 GHz are achieved.