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Friction Behaviors of the Hot Filament Chemical Vapor Deposition Diamond Film under Ambient Air and Water Lubricating Conditions 被引量:2
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作者 SHEN Bin SUN Fanghong 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2009年第5期658-664,共7页
The friction behavior of the hot filament chemical vapor deposition(HFCVD) diamond film plays a critical role on its applications in mechanical fields and largely depends on the environment. Studies on the tribologi... The friction behavior of the hot filament chemical vapor deposition(HFCVD) diamond film plays a critical role on its applications in mechanical fields and largely depends on the environment. Studies on the tribological properties of HFCVD diamond films coated on Co-cemented tungsten carbide (WC-Co) substrates are rarely reported in available literatures, especially in the water lubricating conditions. In this paper, conventional microcrystalline diamond(MCD) and fine-grained diamond(FGD) films are deposited on WC-Co substrates and their friction properties are evaluated on a reciprocating ball-on-plate tribometer, where they are brought to slide against ball-bearing steel and copper balls in dry and water lubricating conditions. Scanning electron microscopy(SEM), atomic force microscopy(AFM), surface profilometer and Raman spectroscopy are adopted to characterize as-deposited diamond films; SEM and energy dispersive X-ray(EDX) are used to investigate the worn region on the surfaces of both counterface balls and diamond films. The research results show that the friction coefficient of HFCVD diamond films always starts with a high initial value, and then gradually transits to a relative stable state. For a given counterface and a sliding condition, the FGD film presents lower stable friction coefficients by 0.02-0.03 than MCD film. The transferred materials adhered on sliding interface are supposed to have predominate effect on the friction behaviors of HFCVD diamond films. Furthermore, the effect of water lubricating on reducing friction coefficient is significant. For a given counterpart, the stable friction coefficients of MCD or FGD films reduce by about 0.07-0.08 while sliding in the water lubricating condition, relative to in dry sliding condition. This study is beneficial for widespread applications of HFCVD diamond coated mechanical components and adopting water lubricating system, replacing ofoil lubricating, in a variety of mechanical processing fields to implement the green production process. 展开更多
关键词 Hot filament chemical vapor deposition(HFCVD) diamond films friction behavior water lubricating
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The Effect of Pressure on the Dissociation of H_2/CH_4Gas Mixture during Diamond Films Growth via Chemical Vapor Deposition 被引量:1
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作者 赵庆勋 辛红丽 +2 位作者 韩佳宁 文钦若 杨景发 《Plasma Science and Technology》 SCIE EI CAS CSCD 2002年第1期1113-1118,共6页
Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used... Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used and the avalanche of electrons is taken into account in this simulation. The average energy distribution of electrons and the space distribution of effective species such as CH3, CH+3, CH+ and H at various gas pressures are given in this paper, and optimum experimental conditions are inferred from these results. 展开更多
关键词 The Effect of Pressure on the Dissociation of H2/CH4Gas Mixture during diamond Films Growth via chemical vapor deposition CH
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Effects of deposition parameters on HFCVD diamond films growth on inner hole surfaces of WC-Co substrates 被引量:3
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作者 王新昶 林子超 +1 位作者 沈彬 孙方宏 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2015年第3期791-802,共12页
Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC?Co substrates mainly include the substrate temperature (t), carbon c... Deposition parameters that have great influences on hot filament chemical vapor deposition (HFCVD) diamond films growth on inner hole surfaces of WC?Co substrates mainly include the substrate temperature (t), carbon content (φ), total pressure (p) and total mass flow (F). Taguchi method was used for the experimental design in order to study the combined effects of the four parameters on the properties of as-deposited diamond films. A new figure-of-merit (FOM) was defined to assess their comprehensive performance. It is clarified thatt,φandp all have significant and complicated effects on the performance of the diamond film and the FOM, which also present some differences as compared with the previous studies on CVD diamond films growth on plane or external surfaces. Aiming to deposit HFCVD diamond films with the best comprehensive performance, the key deposition parameters were finally optimized as:t=830 °C,φ=4.5%,p=4000 Pa,F=800 mL/min. 展开更多
关键词 hot filament chemical vapor deposition diamond film inner hole surface Taguchi method deposition parameter optimization
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Effect of nitrogen on deposition and field emission properties of boron-doped micro-and nano-crystalline diamond films 被引量:1
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作者 L.A.Li S.H.Cheng +3 位作者 H.D.Li Q.Yu J.W.Liu X.Y.Lv 《Nano-Micro Letters》 SCIE EI CAS 2010年第3期154-159,共6页
In this paper,we report the effect of nitrogen on the deposition and properties of boron doped diamond films synthesized by hot filament chemical vapor deposition.The diamond films consisting of micro-grains(nano-grai... In this paper,we report the effect of nitrogen on the deposition and properties of boron doped diamond films synthesized by hot filament chemical vapor deposition.The diamond films consisting of micro-grains(nano-grains) were realized with low(high) boron source flow rate during the growth processes.The transition of micro-grains to nano-grains is speculated to be strongly(weekly) related with the boron(nitrogen) flow rate.The grain size and Raman spectral feature vary insignificantly as a function of the nitrogen introduction at a certain boron flow rate.The variation of electron field emission characteristics dependent on nitrogen is different between microcrystalline and nanocrystalline boron doped diamond samples,which are related to the combined phase composition,boron doping level and texture structure.There is an optimum nitrogen proportion to improve the field emission properties of the boron-doped films. 展开更多
关键词 chemical vapor deposited diamond film Nitrogen effect Boron doping MICROCRYSTALLINE NANOCRYSTALLINE Electron field emission
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Growth of SiC as Binder to Adhere Diamond Particle and Tribological Properties of Diamond Particles Coated SiC 被引量:1
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作者 Shengjie Yu Zhaofeng Chen +3 位作者 Yang Wang Shuwei Hu Ruiying Luo Sheng Cui 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2015年第11期1133-1138,共6页
The purpose of this work was to grow SiC as binder to adhere diamond particles to graphite substrate by low pressure chemical vapor deposition (LPCVD) at 1100 ℃ and 100 Pa using methyltrichlorosilane (MTS: CH3Si... The purpose of this work was to grow SiC as binder to adhere diamond particles to graphite substrate by low pressure chemical vapor deposition (LPCVD) at 1100 ℃ and 100 Pa using methyltrichlorosilane (MTS: CH3SiCl3) as precursor. The composite coatings on graphite substrates were analyzed by various techniques. Results show that a dense SiC coating with a cloud-cluster shape was formed both on the diamond particles and the substrate after deposition, The thermal stress (290.6 MPa) strengthened the interfacial bonding between the diamond particle and the SiC coating, which is advantageous for the purpose of adhering diamond particles to graphite substrate. The applied load of sliding wear test was found to affect not only the friction coefficient, but also the wear surface morphology. With increasing loads, the asperity penetration was high and the friction coefficient decreased. 展开更多
关键词 diamond particle LPCVD (low pressure chemical vapor deposition SiC Tribological performance
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