TWO STEPS CHEMICAL-MECHANICAL POLISHING OF RIGID DISK SUBSTRATE TO GET ATOM-SCALE PLANARIZATION SURFACE

为了得到原子光滑的僵硬磁盘底层表面， ultra-finedalumina 泥浆和纳米，硅石泥浆被准备，并且二步(CMP ) 化学药品机械的擦亮在二泥浆的僵硬磁盘底层被学习。结果证明在在氧化铝泥浆的第一步 CMP 期间，高材料移动率被到达，并且平均粗糙( R_a )和擦亮的表面的平均起浪( W_a )能分别地从以前的 1.4 nm 和 1.6 nm 被减少到大约 0.6 nm 和 0.7 nm 。由使用纳米硅石泥浆并且在第二步 CMP 擦亮过程参数优化， R_a 和擦亮的表面的 W_a 能是进一步的分别地把 nm 和 0.06 nm 归结为 0,038。原子力量显微镜学(AFM ) 分析证明最后的擦亮的表面是极端光滑的 withoutmicro 缺点。

Voltage-induced material removal mechanism of copper for electrochemical-mechanical polishing applications

The current-voltage (I-V) curves, such as linear sweep voltammetry (LSV) and cyclic voltammetry (CV), were employed to evaluate the effect of electrolyte concentration on the electrochemical reaction trend. From the I-V curve, the electrochemical states of active, passive, transient and trans-passive region could be characterized. And then, the mechanism of the process of voltage-induced material removal in electrochemical mechanical polishing (ECMP) of copper was investigated. Scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) analyses were used to observe the surface profile. Finally, the oxidation and reduction processes of the Cu surface were monitored by the repetition of anodic and cathodic potential from cyclic voltammetry (CV) method in acid-and alkali-based electrolyte.

Electrochemical characteristic of chemical-mechanical polishing of copper with oxide passive film

Electrochemical behavior of chemical mechanical polishing of copper with oxide passive film was studied by electrochemical measurement technologies. Dependences of polarization curves and electrochemical parameters, the rate of formation or removal of passive film of copper on film modifier KClO 3 were investigated. The rules of dependences of corrosion potentials and corrosion current densities on polishing pressure and rotation rate were obtained. It is discovered that the rates of formation and removal of passive film of copper are enhanced, while the polishing pressure and rotation rate are reduced. The experiments show that the CMP processes decrease Tafel slope, increase electron transfer coefficient of anode reaction and decrease the activation energy of corrosion reaction of copper, thereby the corrosion processes are accelerated. The results indicate that CMP slurry recipe, which is composed of NaAc NaOH medium, using KClO 3 as passive film modifier and nano sized γ Al 2O 3 as abrasive, is feasible and reasonable. The technological conditions are 100 r/min, 16 kPa.

Scratching by pad asperities in copper electrochemical-mechanical polishing

Low dielectric constant materials/Cu interconnects integration technology provides the direction as well as the challenges in the fabrication of integrated circuits(IC) wafers during copper electrochemical-mechanical polishing(ECMP). These challenges arise primarily from the mechanical fragility of such dielectrics, in which the undesirable scratches are prone to produce. To mitigate this problem, a new model is proposed to predict the initiation of scratching based on the mechanical properties of passive layer and copper substrate. In order to deduce the ratio of the passive layer yield strength to the substrate yield strength and the layer thickness, the limit analysis solution of surface scratch under Berkovich indenter is used to analyze the nano-scratch experimental measurements. The modulus of the passive layer can be calculated by the nano-indentation test combined with the FEM simulation. It is found that the film modulus is about 30% of the substrate modulus. Various regimes of scratching are delineated by FEM modeling and the results are verified by experimental data.

Chemical-mechanically polishing large area free-standing CVD diamond films

Chemical mechanical polishing is used to polish large area free-standing CVD diamond films with diameters of 66 mm.The influence of polishing plates(iron plate,asphalt plate and soft cushion)and oxidizing agents(K_2S_2O_8 and K_2FeO_4)on polishing results are investigated.Profilometer(tip radius 5μm),optical microscope and Raman spectroscopy are used to evaluate the polishing effects of the CVD diamond films.Results show that the material removal rate of iron plate is the highest,while the surface polished by soft cushion is the most uniform with roughness of 2nm.It is also found that the most effective oxidizing agent is K_2FeO_4.In conclusion,the optimum polishing conditions are soft cushion and K_2FeO_4.

Material removal rate in chemical-mechanical polishing of wafers based on particle trajectories

Distribution forms of abrasives in the chemical mechanical polishing(CMP) process are analyzed based on experimental results.Then the relationships between the wafer,the abrasive and the polishing pad are analyzed based on kinematics and contact mechanics.According to the track length of abrasives on the wafer surface,the relationships between the material removal rate and the polishing velocity are obtained.The analysis results are in accord with the experimental results.The conclusion provides a theoretical guide for further understanding the material removal mechanism of wafers in CMP.

An Uncertainty Analysis of Downward Pressure Applied to the Wafer Based on a Flexible Airbag by a Double Side Polishing Machine

The process of wafer polishing is known to be highly demanding,and even small deviations in the processing parameters can have a significant impact on the quality of the wafers obtained.During the process of wafer polishing,maintaining a constant pressure value applied by the polishing head is essential to achieve the desired flatness of the wafer.The accuracy of the downward pressure output by the polishing head is a crucial factor in producing flat wafers.In this paper,the uncertainty component of downward pressure is calculated and its measurement uncertainty is evaluated,and a method for calculating downward pressure uncertainty traceable to international basic unit is established.Therefore,the reliability of double side polishing machine has been significantly improved.

Effects Optimization of Bio-Polishing Industrial Process Parameters

The purpose of this study is to select an appropriate commercial neutral cellulase enzyme for denim garments bio-polishing to achieve specific industrial goals. A full factorial experimental design was used to evaluate the effect of factors considered in the optimization of the bio-polishing process (fabric ID: x1, treatment time: x2, treatment temperature: x3, enzyme concentration: x4, storage time: x5, inactivation step: x6 and enzyme type: x7). Experiments were conducted using laboratory washing machine. Subjective evaluation was performed at a pilot and at an industrial scale. Tear, tensile strength and subjective evaluation concerning hand feel, fabric color, indigo dye pocket back staining and fuzziness extent were evaluated. Results showed that x6 and x7 had significant effects on the fabric tear and tensile strength loss. In the optimization, the great dependence between observed and predicted tear strength and tensile strength loss, the correlation coefficient of the models (R2 > 0.85) and the important value of F-ratio proved the validity of the models. Results showed that denim leg panels treated with the enzyme Lava-Cell NSZ presented a minimum loss of tear and tensile strength. A low-temperature and time enzymatic bio-polishing process was developed at industrial scale.

Composite Adaptive Control of Belt Polishing Force for Aero-engine Blade

The existing methods for blade polishing mainly focus on robot polishing and manual grinding.Due to the difficulty in high-precision control of the polishing force,the blade surface precision is very low in robot polishing,in particular,quality of the inlet and exhaust edges can not satisfy the processing requirements.Manual grinding has low efficiency,high labor intensity and unstable processing quality,moreover,the polished surface is vulnerable to burn,and the surface precision and integrity are difficult to ensure.In order to further improve the profile accuracy and surface quality,a pneumatic flexible polishing force-exerting mechanism is designed and a dual-mode switching composite adaptive control(DSCAC) strategy is proposed,which combines Bang-Bang control and model reference adaptive control based on fuzzy neural network(MRACFNN) together.By the mode decision-making mechanism,Bang-Bang control is used to track the control command signal quickly when the actual polishing force is far away from the target value,and MRACFNN is utilized in smaller error ranges to improve the system robustness and control precision.Based on the mathematical model of the force-exerting mechanism,simulation analysis is implemented on DSCAC.Simulation results show that the output polishing force can better track the given signal.Finally,the blade polishing experiments are carried out on the designed polishing equipment.Experimental results show that DSCAC can effectively mitigate the influence of gas compressibility,valve dead-time effect,valve nonlinear flow,cylinder friction,measurement noise and other interference on the control precision of polishing force,which has high control precision,strong robustness,strong anti-interference ability and other advantages compared with MRACFNN.The proposed research achieves high-precision control of the polishing force,effectively improves the blade machining precision and surface consistency,and significantly reduces the surface roughness.

Parameters Optimization of a Novel 5-DOF Gasbag Polishing Machine Tool

The research on the parameters optimization for gasbag polishing machine tools, mainly aims at a better kinematics performance and a design scheme. Serial structural arm is mostly employed in gasbag polishing machine tools at present, but it is disadvantaged by its complexity, big inertia, and so on. In the multi-objective parameters optimization, it is very difficult to select good parameters to achieve excellent performance of the mechanism. In this paper, a statistics parameters optimization method based on index atlases is presented for a novel 5-DOF gasbag polishing machine tool. In the position analyses, the structure and workspace for a novel 5-DOF gasbag polishing machine tool is developed, where the gasbag polishing machine tool is advantaged by its simple structure, lower inertia and bigger workspace. In the kinematics analyses, several kinematics performance evaluation indices of the machine tool are proposed and discussed, and the global kinematics performance evaluation atlases are given. In the parameters optimization process, considering the assembly technique, a design scheme of the 5-DOF gasbag polishing machine tool is given to own better kinematics performance based on the proposed statistics parameters optimization method, and the global linear isotropic performance index is 0.5, the global rotational isotropic performance index is 0.5, the global linear velocity transmission performance index is 1.012 3 m/s in the case of unit input matrix, the global rotational velocity transmission performance index is 0.102 7 rad/s in the case of unit input matrix, and the workspace volume is 1. The proposed research provides the basis for applications of the novel 5-DOF gasbag polishing machine tool, which can be applied to the modern industrial fields requiring machines with lower inertia, better kinematics transmission performance and better technological efficiency.

Computer Controlled Polishing of the Off-axis Aspheric Mirrors

In this paper, the manufacturing and testing procedures to make large off-axis aspherical mirrors are presented. The difficulties in polishing and testing for both circular aperture and rectangular aperture mirrors are previewed, and a possible solution is given. The two mirrors have been polished by means of CCOS, and the final accuracy is 25nm rms for 770mm×210mm rectangular mirror and 20nm rms for φ600mm circular mirror. These results just meet the optical tolerances specified by the designer, and the manufacturing and testing procedures presented here show good ability to make the large off-axis aspherical mirrors.

Research on Abrasives in the Chemical Mechanical Polishing Process for Silicon Nitride Balls

Silicon nitride (Si 3N 4) has been the main material for balls in ceramic ball bearings, for its lower density, high strength, high hardness, fine thermal stability and anticorrosive, and is widely used in various fields, such as high speed and high temperature areojet engines, precision machine tools and chemical engineer machines. Silicon nitride ceramics is a kind of brittle and hard material that is difficult to machining. In the traditional finishing process of silicon nitride balls, balls are lapped by expensive diamond abrasive. The machining is inefficiency and the cost is high, but also lots of pits, scratch subsurface micro crazes and dislocations will be caused on the surface of the balls, the performance of the ball bearings would be declined seriously. In these year, a kind of new technology known as chemical mechanical polishing is introduced in the ultraprecision machining process of ceramic balls. In this technology, abrasives such as ZrO 2, CeO 2 whose hardness is close to or lower than the work material (Si 3N 4) are used to polishing the balls. In special slurry, these abrasives can chemo-mechanically react with the work material and environment (air or water) to generate softer material (SiO 2). And the resultants will be removed easily at 0.1 nm level. So the surface defects can be minimized, very smooth surface (Ra=4 nm) and fine sphericity (0.15～0.25 μm ) can be obtained, and the machining efficiency is also improved. The action mechanism of the abrasives in the chemical mechanical polishing process in finishing of silicon nitride ball will be introduced in this paper.

Effects of Polishing on Proximate Composition,Physico-Chemical Characteristics,Mineral Composition and Antioxidant Properties of Pigmented Rice

The effects of polishing on proximate compositions,physico-chemical characteristics,mineral compositions and antioxidant properties of the rice flours obtained from three different pigmented rice varieties(Chak-hao Angangba,Chak-hao Amubi and Chak-hao Poireiton) were investigated.The rice varieties were significantly(P < 0.05) different in the contents of the test characteristics.Lipids,ash,minerals,phytochemicals(phenolic acids and flavonoids) and 2,2-diphenyl-1-picrylhydrazyl(DPPH) activity of rice flours were decreased after polishing(9% degree of milling),while amylose content and lightness were increased.X-ray diffraction pattern of rice flours exhibited A-type crystalline pattern with reflections at 15.1o,17.1o,18.2o and 23.0o.Pasting properties and transition temperatures were decreased after polishing treatment.Polishing resulted in changes in the crystallinity,enthalpy and morphology of rice flours.

Effect of Roasting Conditions of Rich Cerium Rare Earth Carbonate on Crystallite Morphology and Polishing Ability of Ceria-Based Rare Earth Oxide

The granule shape and crystal structure of the the ceria-based rare earth oxide which were roasted at 600～1050 ℃ for 2～6 h and then cooled in furnace, cooled out of furnace or cooled in water were studied by means of XRD and SEM. The results revealed that the rich cerium rare earth carbonate could be changed into the rare earth oxide which was a kind of sandwich made of globose granule whose diameter was between 0.5～3.0 μm after being roasted in 900 ℃ for 2 h. This kind of crystal lattice in rare earth oxide belonged to face-centered cubic lattice and its space between crystal surface {111} and {200} (viz. L111 and L200) would enlarge as the roasting temperature increasing. With increasing roasting temperature, L111 would rise straightly upward, and L200 would rise straightly upward when roasting time was 2～4 h but changed little when roasting time was 4～6 h. The glass-polishing experiments found that the polishing ability of the ceria-based rare earth oxide was the best as L111 was 43～53 nm and the L200 was 43～56 nm.

Preparation of Non-spherical Colloidal Silica Nanoparticle and Its Application on Chemical Mechanical Polishing of Sapphire

Non-spherical colloidal silica nanoparticle was prepared by a simple new method, and its particle size distribution and shape morphology were characterized by dynamic light scattering(DLS) and the Focus Ion Beam(FIB) system. This kind of novel colloidal silica particles can be well used in chemical mechanical polishing(CMP) of sapphire wafer surface. And the polishing test proves that non-spherical colloidal silica slurry shows much higher material removal rate(MRR) with higher coefficient of friction(COF) when compared to traditional large spherical colloidal silica slurry with particle size 80 nm by DLS. Besides, sapphire wafer polished by non-spherical abrasive also has a good surface roughness of 0.460 6 nm. Therefore, non-spherical colloidal silica has shown great potential in the CMP field because of its higher MRR and better surface roughness.

An Investigation on a Tin Fixed Abrasive Polishing Pad with Phyllotactic Pattern for Polishing Wafer

In order to improve the polishing ability of polishing pads, a kind of polishing pad with the tin fixed abrasive blocks, which are arranged based on the phyllotaxis theory of biology, was designed and fabricated by the use of electroplating technology, and also its polishing ability for JGS-2 wafer was investigated by polishing experiments. The research results show that the phyllotactic parameters of the polishing pad influence the arrangement density of the tin fixed abrasive blocks, the polishing pad with phyllotactic pattern is feasibly fabricated by the use of electroplating technology, and the good polishing result can be obtained by using the polishing pad with phyllotactic pattern to polish a wafer when the diameter D of the tin fixed abrasive block is between Φ1.3 mm and Φ1.4 mm, and the phyllotactic coefficient k between 1.0 and 1.1,respectively.

Development of Application of RE Polishing Materials

The manufacturing method and functions of the RE polishing powder and comparation of the current situation of its production and application home and abroad were introduced.By analyzing the development of the liquid crystal (plate) display, the wide application of the RE polishing powder in the field of the liquid crystal display and predicts the development direction of the market of the RE polishing powder was presented.In addition, the development trends of the RE polishing powder industry and forecasts the application prospect of the RE polishing powder was analyzed.

A review on polishing technology of large area free-standing CVD diamond films

Recently,with the rapid development of chemical vapor deposition(CVD)technology,large area free-standing CVD diamond films have been produced successfully.However,the coarse grain size on the surface and the non-uniform thickness of unprocessed CVD diamond films make it difficult to meet the application requirement.The current study evaluates several existing polishing methods for CVD diamond films,including mechanical polishing,chemical mechanical polishing and tribochemical polishing technology.

Nanohybrid membrane in algal-membrane photoreactor: Microalgae cultivation and wastewater polishing

Microalgae cultivation has gained tremendous attention in recent years due to its great potential in green biofuel production and wastewater treatment application. Membrane technology is a great solution in separating the microalgae biomass while producing high quality of permeate for recycling. The main objective of this study was to investigate the filtration performance of Ag/GO-PVDF(silver/graphene oxide-polyvinylidene fluoride) membrane in an algalmembrane photoreactor(A-MPR) by benchmarking with a commercial PVDF(com-PVDF) membrane. In this study, Chlorella vulgaris microalgae was cultivated in synthetic wastewater in an A-MPR for ammoniacal-nitrogen and phosphorus recovery and the wastewater was further filtered using Ag/GO-PVDF and com-PVDF membranes to obtain high quality water. Spectrophotometer was used to analyze the chemical oxidation demand(COD), ammoniacal nitrogen(NH3-N) and phosphate(PO43-). The concentration of proteins and carbohydrates was measured using Bradford method and phenol-sulfuric acid method, respectively. The COD of the synthetic wastewater was reduced from(180.5 ± 5.6) ppm to(82 ± 2.6) ppm due to nutrient uptake by microalgae. Then, the Ag/GO-PVDF membrane was used to further purify the microalgae cultivated wastewater, resulting in a low COD permeate of(31 ± 4.6) ppm. The high removal rate of proteins(100%) and carbohydrates(86.6%) as the major foulant in microalgae filtration, with low membrane fouling propensity of Ag/GO-PVDF membrane is advantageous for the sustainable development of the microalgae production. Hence, the integrated A-MPR system is highly recommended as a promising approach for microalgae cultivation and wastewater polishing treatment.

Study of the Contact Force in Free-form Surfaces Compliant EDM Polishing by Robot

With an elastic negative pole being driven by ultra so nic vibration and being moved along the surface of work-piece compliantly by ro bot, a new kind of effective EDM, the compliant EDM, cuts the electrically condu ctive materials away and polishes work-piece of free-form surface. The study o f the contact force between the end of polishing tool and the surface of work-p iece is the key for the compliant EDM to study its cutting mechanism and to make better use of it. This paper makes a model for the contact force and verifies i t by experiments and simulation based on the theory of elastic body kinetics and dynamic stress concentration. The research work shows that this contact force i s caused by both the electrical impulsion of EDM and the mechanical force of ult rasonic vibration, the discharge frequency of compliant EDM has a much more clos er connection with the vibration frequency of polishing tool rather than the fre quency of ultrasonic vibration.