A new method is proposed to determine the amplification factor for 2-hydroxy ethylperoxy radicals （HOC2H4O2·） in chemical amplifier. The radical source comes from the reaction of excess ethene with HO· rad...A new method is proposed to determine the amplification factor for 2-hydroxy ethylperoxy radicals （HOC2H4O2·） in chemical amplifier. The radical source comes from the reaction of excess ethene with HO· radicals generated in the photolysis of water vapor at the wave length of 185 nm in air in a flow tube. This produces a radical source which contains equal amount of HO2·and HOC2H4O2·. The amplification factor is derived from the slopes of the lines between produced NO2 in chemical amplifier and total initial radical concentrations measured for the source of HO2· and that of the same amount of HO2· and HOC2H4O2· respectively. The amplification factor of HOC2H4O2· was similar to that of HO2·, indicating that HOC2H4O2· can be measured with the same sensitivity as HO2· by chemical amplifier.展开更多
An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake te...An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake temperature affect acid diffusion and deblocking reactions,thus playing an integral role in defining the resist profile.Both pre-apply bake delay and post exposure delay(PED)affect critical dimension(CD)variation,but PED is more sensitive to contact with airborne contaminants.Different polymers and different photo-acid generators(PAG)are also illustrated in this work.By optimizing the structure and concentration of key components,an ICA resist with good environment stability and excellent lithographic performance was demonstrated.展开更多
文摘A new method is proposed to determine the amplification factor for 2-hydroxy ethylperoxy radicals （HOC2H4O2·） in chemical amplifier. The radical source comes from the reaction of excess ethene with HO· radicals generated in the photolysis of water vapor at the wave length of 185 nm in air in a flow tube. This produces a radical source which contains equal amount of HO2·and HOC2H4O2·. The amplification factor is derived from the slopes of the lines between produced NO2 in chemical amplifier and total initial radical concentrations measured for the source of HO2· and that of the same amount of HO2· and HOC2H4O2· respectively. The amplification factor of HOC2H4O2· was similar to that of HO2·, indicating that HOC2H4O2· can be measured with the same sensitivity as HO2· by chemical amplifier.
文摘An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake temperature affect acid diffusion and deblocking reactions,thus playing an integral role in defining the resist profile.Both pre-apply bake delay and post exposure delay(PED)affect critical dimension(CD)variation,but PED is more sensitive to contact with airborne contaminants.Different polymers and different photo-acid generators(PAG)are also illustrated in this work.By optimizing the structure and concentration of key components,an ICA resist with good environment stability and excellent lithographic performance was demonstrated.
