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Drop failure modes of Sn-3.0Ag-0.5Cu solder joints in wafer level chip scale package 被引量:5
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作者 黄明亮 赵宁 +1 位作者 刘爽 何宜谦 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2016年第6期1663-1669,共7页
To reveal the drop failure modes of the wafer level chip scale packages (WLCSPs) with Sn-3.0Ag-0.5Cu solder joints, board level drop tests were performed according to the JEDEC standard. Six failure modes were iden... To reveal the drop failure modes of the wafer level chip scale packages (WLCSPs) with Sn-3.0Ag-0.5Cu solder joints, board level drop tests were performed according to the JEDEC standard. Six failure modes were identified, i.e., short FR-4 cracks and complete FR-4 cracks at the printing circuit board (PCB) side, split between redistribution layer (RDL) and Cu under bump metallization (UBM), RDL fracture, bulk cracks and partial bulk and intermetallic compound (IMC) cracks at the chip side. For the outmost solder joints, complete FR-4 cracks tended to occur, due to large deformation of PCB and low strength of FR-4 dielectric layer. The formation of complete FR-4 cracks largely absorbed the impact energy, resulting in the absence of other failure modes. For the inner solder joints, the absorption of impact energy by the short FR-4 cracks was limited, resulting in other failure modes at the chip side. 展开更多
关键词 Sn-3.0Ag-0.5Cu wafer level chip scale package solder joint drop failure mode
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Integrated power electronics module based on chip scale packaged power devices 被引量:2
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作者 王建冈 阮新波 《Journal of Southeast University(English Edition)》 EI CAS 2009年第3期367-371,共5页
High performance can be obtained for the integrated power electronics module(IPEM) by using a three-dimensional packaging structure instead of a planar structure. A three- dimensional packaged half bridge-IPEM (HB-... High performance can be obtained for the integrated power electronics module(IPEM) by using a three-dimensional packaging structure instead of a planar structure. A three- dimensional packaged half bridge-IPEM (HB-IPEM), consisting of two chip scale packaged MOSFETs and the corresponding gate driver and protection circuits, is fabricated at the laboratory. The reliability of the IPEM is controlled from the shape design of solder joints and the control of assembly process parameters. The parasitic parameters are extracted using Agilent 4395A impedance analyzer for building the parasitic parameter model of the HB- IPEM. A 12 V/3 A output synchronous rectifier Buck converter using the HB-IPEM is built to test the electrical performance of the HB-IPEM. Low voltage spikes on two MOSFETs illustrate that the three-dimensional package of the HB-IPEM can decrease parasitic inductance. Temperature distribution simulation results of the HB-IPEM using FLOTHERM are given. Heat dissipation of the solder joints makes the peak junction temperature of the chip drop obviously. The package realizes three-dimensional heat dissipation and has better thermal management. 展开更多
关键词 integrated power electronics module chip scale package RELIABILITY parasitic parameter thermal management
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