A compact structured illumination chip based on integrated optics is proposed and fabricated on a silicon-on- insulator platform. Based on the simulation of Caussian beam interference, we adopt a chirped diffraction g...A compact structured illumination chip based on integrated optics is proposed and fabricated on a silicon-on- insulator platform. Based on the simulation of Caussian beam interference, we adopt a chirped diffraction grating to achieve a specific interference pattern. The experimental results match well with the simulations. The portability and flexibility of the structured illumination chip can be increased greatly through horizontal encapsulation. High levels of integration, compared with the conventional structured illumination approach, make this chip very compact, with a footprint of only around 1 mm2. The chip has no optical lenses and can be easily combined with a microfluidic system. These properties would make the chip very suitable for portable 3D scanner and compact super-resolution microscopy applications.展开更多
A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, G...A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, GaAs, InP, Si-based DDR IMPATT structure at Ka band with dark condition. But when it is exposed to optical illumination through a proper optical window for both top mounted（TM） and flip chip（FC） configuration,it shows the influence on the oscillator performances in that band of frequency. The simulated results are analyzed for 36 GHz window frequency in each of the diodes and relative differences are found in power output and frequency of all these diodes with variable intensities of illumination. Finally it is found that optical control has immense effect in both FC and TM mode regarding the reduction of output power and shifting of operating frequency from which optimization is done for the best optically sensitive material for IMPATT diode.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61334008the National High-Technology Research and Development Program of China under Grant No 2015AA016904the Instrument Developing Project of the Chinese Academy of Sciences under Grant No YZ201301
文摘A compact structured illumination chip based on integrated optics is proposed and fabricated on a silicon-on- insulator platform. Based on the simulation of Caussian beam interference, we adopt a chirped diffraction grating to achieve a specific interference pattern. The experimental results match well with the simulations. The portability and flexibility of the structured illumination chip can be increased greatly through horizontal encapsulation. High levels of integration, compared with the conventional structured illumination approach, make this chip very compact, with a footprint of only around 1 mm2. The chip has no optical lenses and can be easily combined with a microfluidic system. These properties would make the chip very suitable for portable 3D scanner and compact super-resolution microscopy applications.
文摘A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, GaAs, InP, Si-based DDR IMPATT structure at Ka band with dark condition. But when it is exposed to optical illumination through a proper optical window for both top mounted（TM） and flip chip（FC） configuration,it shows the influence on the oscillator performances in that band of frequency. The simulated results are analyzed for 36 GHz window frequency in each of the diodes and relative differences are found in power output and frequency of all these diodes with variable intensities of illumination. Finally it is found that optical control has immense effect in both FC and TM mode regarding the reduction of output power and shifting of operating frequency from which optimization is done for the best optically sensitive material for IMPATT diode.
