A Comparative Study on Open Circuit Voltage Models for Lithium-ion Batteries

The current research of state of charge(SoC) online estimation of lithium-ion battery(LiB) in electric vehicles(EVs)mainly focuses on adopting or improving of battery models and estimation filters. However, little attention has been paid to the accuracy of various open circuit voltage(OCV) models for correcting the SoC with aid of the ampere-hour counting method. This paper presents a comprehensive comparison study on eighteen OCV models which cover the majority of models used in literature. The low-current OCV tests are conducted on the typical commercial LiFePO/graphite(LFP) and LiNiMnCoO/graphite(NMC) cells to obtain the experimental OCV-SoC curves at different ambient temperature and aging stages. With selected OCV and SoC points from experimental OCV-SoC curves, the parameters of each OCV model are determined by curve fitting toolbox of MATLAB 2013. Then the fitting OCV-SoC curves based on diversified OCV models are also obtained. The indicator of root-mean-square error(RMSE) between the experimental data and fitted data is selected to evaluate the adaptabilities of these OCV models for their main features, advantages,and limitations. The sensitivities of OCV models to ambient temperatures, aging stages, numbers of data points,and SoC regions are studied for both NMC and LFP cells. Furthermore, the influences of these models on SoC estimation are discussed. Through a comprehensive comparison and analysis on OCV models, some recommendations in selecting OCV models for both NMC and LFP cells are given.

Small-Signal Equivalent Circuit Modeling of a Photodetector Chip

A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance into consideration,is first determined based on the device＇s physical structure. The photodetector＇s S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip＇s high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits.

Small Signal Equivalent Circuit Model and Modulation Properties of Vertical Cavity-Surface Emitting Lasers

Small signal equivalent circuit model and modulation properties of vertical cavity surface emitting lasers(VCSEL's) are presented.The modulation properties both in analytic equation calculation and in circuit model simulation are studied.The analytic equation calculation of the modulation properties is calculated by using Mathcad program and the circuit model simulation is simulated by using Pspice program respectively.The results of calculation and the simulation are in good agreement with each other.Experiment is performed to testify the circuit model.

Simulation of second-order RC equivalent circuit model of lithium battery based on variable resistance and capacitance

With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in this paper.The ampere-hour(Ah)integration method based on external characteristics is analyzed,and the open-circuit voltage(OCV)method is studied.The two methods are combined to estimate SOC.Considering the accuracy and complexity of the model,the second-order RC equivalent circuit model of lithium battery is selected.Pulse discharge and exponential fitting of lithium battery are used to obtain corresponding parameters.The simulation is carried out by using fixed resistance capacitance and variable resistance capacitor respectively.The accuracy of variable resistance and capacitance model is 2.9%,which verifies the validity of the proposed model.

Investigation and Comparison of Two Models in Galvanic Coupling Intra-body Communications

Intra-body communication (IBC) is a new,emerging,short-range and human body based communication methodology.It is a technique to network various devices on human body,by utilizing the conducting properties of human tissues,suitable for currently fast developing Body area network (BAN)/Body sensor network (BSN).IBC is believed to have advantages in power consumption,electromagnetic radiation,interference from external electromagnetic noise,security,and restriction in spectrum resource.In this article,the authors develop two models,which are analytical and empirical approaches,for comparing the performance and accuracy of IBC on a human limb.Through in vivo experiment of five volunteers,both models basically match with the experimental result with equivalent circuit model superior than electromagnetic model in term of maximum error.

Investigation of the compact torus plasma motion in the KTX-CTI device based on circuit analyses

Compact torus(CT)injection is one of the most promising methods for the central fuelling of next-generation reactor-grade fusion devices due to its high density,high velocity,and selfcontained magnetised structure.A newly compact torus injector(CTI)device in Keda Torus e Xperiment(KTX),named KTX-CTI,was successfully developed and tested at the University of Science and Technology in China.In this study,first,we briefly introduce the basic principles and structure of KTX-CTI,and then,present an accurate circuit model that relies on nonlinear regression analysis(NRA)for studying the current waveform of the formation region.The current waveform,displacement,and velocity of CT plasma in the acceleration region are calculated using this NRA-based one-dimensional point model.The model results were in good agreement with the experiments.The next-step upgrading reference scheme of the KTX-CTI device is preliminarily investigated using this NRA-based point model.This research can provide insights for the development of experiments and future upgrades of the device.

Small Signal Circuit Model of Double Photodiodes

The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given.From analysis on the frequency domain of the circuit model the device has two poles.One has the relationship with junction capacitance and the DPD’s load,the other with the depth and the doping concentration of the N-well in the DPD.Different depth of the N-well and different area of the DPDs with bandwidth were compared.The analysis results are important to design the high speed DPDs.

An equivalent circuit model for terahertz quantum cascade lasers:Modeling and experiments

Terahertz quantum cascade lasers（THz QCLs） emitted at 4.4 THz are fabricated and characterized. An equivalent circuit model is established based on the five-level rate equations to describe their characteristics. In order to illustrate the capability of the model, the steady and dynamic performances of the fabricated THz QCLs are simulated by the model.Compared to the sophisticated numerical methods, the presented model has advantages of fast calculation and good compatibility with circuit simulation for system-level designs and optimizations. The validity of the model is verified by the experimental and numerical results.

Parametric Modeling of Circuit Model for AC Glow Discharge in Air

In the parametric modeling of the circuit model for glow discharge in air,a new method for the design of glow discharge circuit model is presented.The new circuit model is an important reference for the design of plasma power supply,the simulation of glow discharge plasma actuator and the simulation of glow discharge plasma anemometer.The modeling approach consists in developing an electrical model of the glow discharge in air based on circuit components.The structure of the circuit model is established according to the theoretical analysis and the experimental device.Then the parameters of the circuit model are obtained based on the circuit analysis.Finally,the circuit model is verified by comparing the simulation current with the experimental current.This model takes into account the whole framework of the air glow discharge including the sheath and the plasma area.The built circuit model is feasible and reliable,thus being instructive for the investigation of the glow discharge in air.

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent.We present an InP HEMT extrinsic parasitic equivalent circuit,in which the conductance between the device electrodes and a new gate-drain mutual inductance term L_(mgd)are taken into account for the high-frequency magnetic field coupling between device electrodes.Based on the suggested parasitic equivalent circuit,through HFSS and advanced design system(ADS)co-simulation,the equivalent circuit parameters are directly extracted in the multi-step system.The HFSS simulation prediction,measurement data,and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit.The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.

Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs

An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors（a-IGZO TFTs）with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges,which are controlled by gate voltage.It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance（C_（TI）/C_（BI））.Incorporating the proposed model with Verilog-A,a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations.Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure.

Circuit-level simulation of the hysteresis inversion frequency of the ferroelectric liquid crystals

The V-shaped electro-optical properties control is investigated by an equivalent circuit model.Simu-lation results show that genuine V-shaped form is only observed at hysteresis inversion frequency,and be-low and above this frequency an anomalous and normal hysteresis are observed.And the inversion fre-quency decreases with the resistance of ferroelectric liquid crystal(FLC)layer following logf_i=-alogR_(LC)+b .The results are in good accordance with the reported experimental results.

Study of the selective effect on cells induced by nanosecond pulsed electric field with the resistor-capacitor circuit model

A resistor-capacitor(RC)circuit model is proposed to study the effect of nanosecond pulsed electricfield on cells according to the structure and electrical parameters of cells.After a nanosecond step fieldhas been applied,the variation of voltages across cytomembrane and mitochondria membrane both in nor-mal and in malignant cells are studied with this model.The time for selectively targeting the mitochondriamembrane and malignant cell can be evaluated much easily with curves that show the variation of voltageacross each membrane with time.Ramp field is the typical field applied in electrobiology.The voltagesacross each membrane induced by ramp field are analyzed with this model.To selectively target the mito-chondria membrane,proper range of ramp slope is needed.It is relatively difficult to decide the range ofa slope to selectively affect the malignant cell.Under some conditions,such a range even does not exist.

Comparison of Different Models for the Simulation of Photovoltaic Panels

This article contains the description of a circuital model, which was developed to represent the energy production of a photovoltaic panel in a more accurate way, taking into consideration the decrease of its operational time. Furthermore, a comparison among the experimental, the posed simulated model in PSIM and the results obtained by a piece of software developed by some students of the Universidad Distrital is performed in order to verify the values provided by the software and demonstrate the optimal operation of the developed model.

Evaluation of the Capacitance and Charge Distribution for Conducting Bodies by Circuit Modelling

This paper presents a numerical analysis for computation of free space capacitance of different arbitrarily shaped conducting bodies based on the finite element method with triangular subsection modeling. Evaluation of capacitance of different arbitrary shapes is important for the electrostatic analysis. Capacitance computation is an important step in the prediction of electrostatic discharge which causes electromagnetic interference. We specifically illustrated capacitance computation of electrostatic models like unit cube, rectangular plate, triangular plate, T-shaped plate, sphere and two touching spheres. Numerical data on the capacitance of conducting objects are presented. The results are compared with other available results in the literature. We used the COMSOL Multiphysics software for the simulation. The models are designed in three-dimensional form using electrostatic environment and can be applied to any spacecraft circuit modeling design. The findings of this study show that the finite element method is a more accurate method and can be applied to any circuit modeling design.

The initial stages of Li_(2)O_(2) formation during oxygen reduction reaction in Li-O_(2) batteries:The significance of Li_(2)O_(2) in charge-transfer reactions within devices

Lithium-oxygen batteries are a promising technology because they can greatly surpass the energy density of lithium-ion batteries.However,this theoretical characteristic has not yet been converted into a real device with high cyclability.Problems with air contamination,metallic lithium reactivity,and complex discharge and charge reactions are the main issues for this technology.A fast and reversible oxygen reduction reaction(ORR)is crucial for good performance of secondary batteries',but the partial knowledge of its mechanisms,especially when devices are concerned,hinders further development.From this perspective,the present work uses operando Raman experiments and electrochemical impedance spectroscopy(EIS)to assess the first stages of the discharge processes in porous carbon electrodes,following their changes cycle by cycle at initial operation.A growth kinetic formation of the discharge product signal(Li_(2)O_(2))was observed with operando Raman,indicating a first-order reaction and enabling an analysis by a microkinetic model.The solution mechanism in the evaluated system was ascribed for an equivalent circuit with three time constants.While the time constant for the anode interface reveals to remain relatively constant after the first discharge,its surface seemed to be more non-uniform.The model indicated that the reaction occurs at the Li_(2)O_(2) surface,decreasing the associated resistance during the initial discharge phase.Furthermore,the growth of Li_(2)O_(2) forms a hetero-phase between Li_(2)O_(2)/electrolyte,while creating a more compact and homogeneous on the Li_(2)O_(2)/cathode surface.The methodology here described thus offers a way of directly probing changes in surface chemistry evolution during cycling from a device through EIS analysis.

A compact X-band backward traveling-wave accelerating structure

Very high-energy electrons(VHEEs)are potential candidates for FLASH radiotherapy for deep-seated tumors.We proposed a compact VHEE facility based on an X-band high-gradient high-power technique.In this study,we investigated and realized the first X-band backward traveling-wave(BTW)accelerating structure as the buncher for a VHEE facility.A method for calculating the parameters of single cell from the field distribution was introduced to simplify the design of the BTW structure.Time-domain circuit equations were applied to calculate the transient beam parameters of the buncher in the unsteady state.A prototype of the BTW structure with a thermionic cathode-diode electron gun was designed,fabricated,and tested at high power at the Tsinghua X-band high-power test stand.The structure successfully operated with 5-MW microwave pulses from the pulse compressor and outputted electron bunches with an energy of 8 MeV and a pulsed current of 108 mA.

Power consumption in a field emission panel

The power consumption and electric field distribution in a field emission display （FED） panel is optimized with a novel pixel structure. A circuit model is proposed to estimate the total power consumption in an FED panel which is composed of anode energy consumption, energy loss due to the leakage current and the energy dissipated in the parasitic capacitances. Moreover, the parasitic capacitances play a vital part in the power consumption and driving performance. In order to lower the parasitic capacitances, multiple dielectric layers are used as the gate electrode. Due to different etching speeds, a novel pixel structure is formed. As a result, the power consumption of an FED panel is reduced by 28% in a full white picture, and the electron beam performance is also better than that of the conventional structure.

SPICE model of trench-gate MOSFET device

A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.

An Insight into the Second-Harmonic Current Reduction Control Strategies in Two-Stage Converters

Due to the components at twice the fundamental frequency of output voltage in the instantaneous output power of a two-stage single-phase inverter(TSI),the second harmonic current(SHC)is generated in the frontend dc-dc converter(FDC).To reduce the SHC,optimizing the control strategy of the FDC is an effective and costless approach.Fromthe view of visual impedance,this paper conducts an intensive study on the SHC reduction strategies.Origin of the SHC is illustrated first.Then,the equivalent circuit models of the FDC under different control strategies are proposed to analyse the SHC propagation characteristic.The derived model can offer a better insight into how the inductor SHC is affected by the control parameters.According to the derived models,a synthesis of different control strategies is presented and the relevant parameters are listed for control design to achieve better suppression effect.The benefits and limitations of these control strategies are also discussed.Based on the proposed equivalent circuit models,several optimization methods are proposed to enhance the effect.A 1500 VA TSI prototype is built and simulated on MATLAB/Simulink,verifying the effectiveness of the proposed optimization methods.This paper is aimed to provide a guideline for the control design and control optimization of the TSIs.