A series of white phosphorescent OLED devices with buffer layer and multiple dopant structure is investigated in order to obtain better electro-optic performances and color stability. The color coordinate and color st...A series of white phosphorescent OLED devices with buffer layer and multiple dopant structure is investigated in order to obtain better electro-optic performances and color stability. The color coordinate and color stability are related to the location of multiple dopants layer, and the optimized location can compensate for the change of the blue emission intensity under a high voltage and stabilize the spectrum. The electro-optic performances and color stability can be further improved by changing the composition and thickness of the buffer layer between the emitting layer and the electron transport layer.In device B2, the distance from multiple dopant layer to buffer layer is 2 nm and the thickness of buffer layer is 5 nm,the maximum luminance, current density, and power efficiency can reach 9091 cd/m^2, 364.5 mA/cm^2, and 26.74 lm/W,respectively. The variation of international commission on the illumination（CIE） coordinate of device B2 with voltage increasing from 4 V to 7 V is only（0.006, 0.004）.展开更多
We present a pair of phase-locked lasers with a 9.2-GHz frequency difference through the injection locking of a master laser to the RF-modulation sideband of a slave diode laser. Using this laser system, a coherent po...We present a pair of phase-locked lasers with a 9.2-GHz frequency difference through the injection locking of a master laser to the RF-modulation sideband of a slave diode laser. Using this laser system, a coherent population trapping （CPT） signal with a typical linewidth of ～ 182 Hz is obtained in a cesium vapor cell filled with 30 Torr （4kPa） of neon as the buffer gas. We investigate the influence of the partial pressure of the neon buffer gas on the CPT linewidth, amplitude, and frequency shift. The results may offer some references for CPT atomic clocks and CPT atomic magnetometers.展开更多
In this paper, an MoOx film is deposited on a polyethylene terephthalate （PET） substrate as a buffer layer to improve the surface roughness of the flexible PET substrate. With an optimized MoOx thickness of 100 nm, ...In this paper, an MoOx film is deposited on a polyethylene terephthalate （PET） substrate as a buffer layer to improve the surface roughness of the flexible PET substrate. With an optimized MoOx thickness of 100 nm, the surface roughness of the PET substrate can be reduced to a very small value of 0.273 nm （much less than 0.585 nm of the pure PET）. Flexible white top-emitting organic light-emitting diodes （TEOLEDs） with red and blue dual phosphorescent emitting layers are constructed based on a low-reflectivity Sm/Ag semi-transparent cathode. The flexible white emission exhibits the best luminance and current injection characteristics with the 100-nm-thick MoOx buffer layer and this result indicates that a smooth substrate is beneficial to the enhancement of device electrical and electroluminescence performances. However, the white TEOLED with a 50-nm-thick MoOx buffer layer exhibits a maximum current efficiency of 4.64 cd/A and a power efficiency of 1.9 lm/W, slightly higher than those with a 100-nm MoOx buffer layer, which is mainly due to an obvious intensity enhancement but limited current increases in 50-nm MoOx-based white TEOLED. The change amplitudes of the Commission International de l’Eclairage （CIE） chromaticity coordinates are less than （0.016, 0.005） for all devices in a wide luminance range over 100 cd/m2, indicating an excellent color stability in our white flexible TEOLEDs. Additionally, the flexible white TEOLED with an MoOx buffer layer shows excellent flexibility to withstand more than 500 bending times under a curvature radius of approximately 9 mm. Research demonstrates that it is mainly attributed to the high surface energy of the MoOx buffer layer, which is conducible to the improvement of the surface adhesion to the PET substrate and the Ag anode.展开更多
文摘A series of white phosphorescent OLED devices with buffer layer and multiple dopant structure is investigated in order to obtain better electro-optic performances and color stability. The color coordinate and color stability are related to the location of multiple dopants layer, and the optimized location can compensate for the change of the blue emission intensity under a high voltage and stabilize the spectrum. The electro-optic performances and color stability can be further improved by changing the composition and thickness of the buffer layer between the emitting layer and the electron transport layer.In device B2, the distance from multiple dopant layer to buffer layer is 2 nm and the thickness of buffer layer is 5 nm,the maximum luminance, current density, and power efficiency can reach 9091 cd/m^2, 364.5 mA/cm^2, and 26.74 lm/W,respectively. The variation of international commission on the illumination（CIE） coordinate of device B2 with voltage increasing from 4 V to 7 V is only（0.006, 0.004）.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11274213, 61205215, 61078051, and 612279002)the National Major Scientific Research Program of China (Grant No. 2012CB921601)+1 种基金the Research Project for Returned Abroad Scholars from Universities of Shanxi Province,China (Grant No. 2012-015)the Project for Excellent Research Team of the National Natural Science Foundation of China (Grant No. 61121064)
文摘We present a pair of phase-locked lasers with a 9.2-GHz frequency difference through the injection locking of a master laser to the RF-modulation sideband of a slave diode laser. Using this laser system, a coherent population trapping （CPT） signal with a typical linewidth of ～ 182 Hz is obtained in a cesium vapor cell filled with 30 Torr （4kPa） of neon as the buffer gas. We investigate the influence of the partial pressure of the neon buffer gas on the CPT linewidth, amplitude, and frequency shift. The results may offer some references for CPT atomic clocks and CPT atomic magnetometers.
基金Project supported by the National Key Basic Research and Development Program of China(Grant No.2009CB930600)the National Natural Science Founda-tion of China(Grant Nos.61274065,60907047,51173081,and 61136003)the"333"and"Qing Lan"Program of Jiangsu Province,and the"Qing Lan"and"Pandeng"Project of Nanjing University of Posts and Telecommunications(Grant Nos.NY210040,NY211069,and NY 210015)
文摘In this paper, an MoOx film is deposited on a polyethylene terephthalate （PET） substrate as a buffer layer to improve the surface roughness of the flexible PET substrate. With an optimized MoOx thickness of 100 nm, the surface roughness of the PET substrate can be reduced to a very small value of 0.273 nm （much less than 0.585 nm of the pure PET）. Flexible white top-emitting organic light-emitting diodes （TEOLEDs） with red and blue dual phosphorescent emitting layers are constructed based on a low-reflectivity Sm/Ag semi-transparent cathode. The flexible white emission exhibits the best luminance and current injection characteristics with the 100-nm-thick MoOx buffer layer and this result indicates that a smooth substrate is beneficial to the enhancement of device electrical and electroluminescence performances. However, the white TEOLED with a 50-nm-thick MoOx buffer layer exhibits a maximum current efficiency of 4.64 cd/A and a power efficiency of 1.9 lm/W, slightly higher than those with a 100-nm MoOx buffer layer, which is mainly due to an obvious intensity enhancement but limited current increases in 50-nm MoOx-based white TEOLED. The change amplitudes of the Commission International de l’Eclairage （CIE） chromaticity coordinates are less than （0.016, 0.005） for all devices in a wide luminance range over 100 cd/m2, indicating an excellent color stability in our white flexible TEOLEDs. Additionally, the flexible white TEOLED with an MoOx buffer layer shows excellent flexibility to withstand more than 500 bending times under a curvature radius of approximately 9 mm. Research demonstrates that it is mainly attributed to the high surface energy of the MoOx buffer layer, which is conducible to the improvement of the surface adhesion to the PET substrate and the Ag anode.
