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Colossal negative magnetoresistance in spin glass Na(Zn,Mn)Sb 被引量:2
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作者 Shuang Yu Yi Peng +5 位作者 Guoqiang Zhao Jianfa Zhao Xiancheng Wang Jun Zhang Zheng Deng Changqing Jin 《Journal of Semiconductors》 EI CAS CSCD 2023年第3期62-67,共6页
We report the study of magnetic and transport properties of polycrystalline and single crystal Na(Zn,Mn)Sb,a new member of“111”type of diluted magnetic materials.The material crystallizes into Cu2Sb-type structure w... We report the study of magnetic and transport properties of polycrystalline and single crystal Na(Zn,Mn)Sb,a new member of“111”type of diluted magnetic materials.The material crystallizes into Cu2Sb-type structure which is isostructural to“111”type Fe-based superconductors.With suitable carrier and spin doping,the Na(Zn,Mn)Sb establishes spin-glass ordering with freezing temperature(Tf)below 15 K.Despite lack of long-range ferromagnetic ordering,Na(Zn,Mn)Sb single crystal still shows sizeable anomalous Hall effect below Tf.Carrier concentration determined by Hall effect measurements is over 1019 cm-3.More significantly,we observe colossal negative magnetoresistance(MR≡[ρ(H)−ρ(0)]/ρ(0))of-94%in the single crystal sample. 展开更多
关键词 colossal negative magnetoresistance spin glass diluted magnetic materials
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Colossal magnetoresistance in manganites and related prototype devices 被引量:2
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作者 刘愉快 殷月伟 李晓光 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第8期1-19,共19页
We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in mang... We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTio3 p-n junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions with dielectric, ferroelectric, and organic semiconductor spacers using the fully spin polarized nature of manganites; and the effect of particle size on magnetic properties in manganite nanoparticles. 展开更多
关键词 colossal magnetoresistance manganite multiferroic heterostructure tunnel junction size effect
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Research of Colossal Magnetoresistance in La_(0.67)Ca_(0.33)Mn_(1-x)Cr_xO_3 (0.00x0.15) 被引量:1
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作者 刘宁 孙勇 《Journal of Rare Earths》 SCIE EI CAS CSCD 2004年第4期501-504,共4页
The extraordinary colossal magnetoresistance (CMR) behavior in Mn-site doped system La_(0.67)Ca_(0.33)Mn_(1-x)Cr_xO_3 (0.00x0.15) was reported. It was found that the substitution with Cr on Mn sites introduces an addi... The extraordinary colossal magnetoresistance (CMR) behavior in Mn-site doped system La_(0.67)Ca_(0.33)Mn_(1-x)Cr_xO_3 (0.00x0.15) was reported. It was found that the substitution with Cr on Mn sites introduces an additional bump in zero-field resistivity. With increasing Cr content, this additional bump grows up drastically while the original resistivity peak associated with magnetic order transition diminishes gradually. Under the applied magnetic field, both bumps of resistivity are deeply compressed, which leads to the appearance of two peaks in CMR response. As a result, the temperature range of CMR response is significantly broadened, spanned from the lowest to near room temperature. These results suggest that Mn-site element substitution could be a potent way of tuning CMR response. 展开更多
关键词 coherence physics colossal magnetoresistance rare earths
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Colossal negative magnetoresistance from hopping in insulating ferromagnetic semiconductors 被引量:2
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作者 Xinyu Liu Logan Riney +4 位作者 Josue Guerra William Powers Jiashu Wang Jacek K.Furdyna Badih A.Assaf 《Journal of Semiconductors》 EI CAS CSCD 2022年第11期44-53,共10页
Ferromagnetic semiconductor Ga_(1–x)Mn_(x)As_(1–y)P_(y) thin films go through a metal–insulator transition at low temperature where electrical conduction becomes driven by hopping of charge carriers.In this regime,... Ferromagnetic semiconductor Ga_(1–x)Mn_(x)As_(1–y)P_(y) thin films go through a metal–insulator transition at low temperature where electrical conduction becomes driven by hopping of charge carriers.In this regime,we report a colossal negative magnetoresistance(CNMR)coexisting with a saturated magnetic moment,unlike in the traditional magnetic semiconductor Ga_(1–x)Mn_(x)As.By analyzing the temperature dependence of the resistivity at fixed magnetic field,we demonstrate that the CNMR can be consistently described by the field dependence of the localization length,which relates to a field dependent mobility edge.This dependence is likely due to the random environment of Mn atoms in Ga_(1-x)Mn_(x)As_(1-y)P_(y) which causes a random spatial distribution of the mobility that is suppressed by an increasing magnetic field. 展开更多
关键词 ferromagnetic semiconductor colossal negative magnetoresistance variable-range hopping nearest-neighbor hopping Anderson localization SPINTRONIC
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Irreversible Colossal Magnetoresistance in La_(0.58)Dy_(0.09)Ca_(0.33)MnO_3
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作者 Baoxin HUANG, Yihua LIU, Ruzhen ZHANG, Youyong DAI, Chengjian WANG, Xiaobo YUAN and Liangmo MEIDepartment of Physics and State Key Laboratory of Crystal Materials, Shandong University, Ji’nan 250100, China 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2003年第6期622-624,共3页
The representative sample La0.58Dy0.09Ca0.33MnO3 of Dy doped La0.67Ca0.33MnO3 rare-earth manganites was investigated. The most important effect of Dy doping is to introduce the magnetoimpurity and form the spin cluste... The representative sample La0.58Dy0.09Ca0.33MnO3 of Dy doped La0.67Ca0.33MnO3 rare-earth manganites was investigated. The most important effect of Dy doping is to introduce the magnetoimpurity and form the spin clusters which induce dramatically large CMR in La0.58Dy0.09Ca0.33MnO3. The fitting results of field-induced resistivity decrease to the Brillouin function indicate that the CMR is caused by the spin dependent hopping between spin clusters. It is the magnetic field that reduces the size of spin clusters and induces a field-induced irreversible CMR behaviour. 展开更多
关键词 Spin cluster Magnetoimpurity colossal magnetoresistance
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Possible Origins for Paramagnetic-ferromagnetic and Insulator-metal Transitions as well as Colossal Magnetoresistance in Manganites
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作者 李建青 袁松柳 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2009年第6期903-906,共4页
Systematical investigations of zero-field resistivity, magnetoresistance and magnetization were performed for a typical manganese compound La2/3Ca1/3MnO3. It is argued that the common origin for insulator-metal and pa... Systematical investigations of zero-field resistivity, magnetoresistance and magnetization were performed for a typical manganese compound La2/3Ca1/3MnO3. It is argued that the common origin for insulator-metal and paramagenetic ferromagnetic-transitions as well as colossal magnetoresistance is due to the formation of ferromagnetic clusters in the paramagnetic background. The transition to metallic state is resulted from percolation of ferromagnetic metallic clusters, while the colossal magnetoresistance is due to the application of magnetic field, which accelerates the growth of ferromagnetic metallic clusters and causes the shift of the onset temperature for the metallic percolation to higher temperature. Based on the random resistor network model, the zero-field resistivity versus temperature dependence is simulated by using experimental parameters, and experimental data well agree with those in whole temperature range, giving a strong support to our approach. 展开更多
关键词 PERCOLATION colossal magnetoresistance insulator-metal transition
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MAGNETIC PROPERTIES AND COLOSSAL MAGNETORESISTANCE OF La1-xSrxMn0.88Fe0.12O3
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《中国有色金属学会会刊:英文版》 CSCD 1998年第4期101-104,共4页
INTRODUCTIONTheABO3oxideswithperovskitebasedstructureofMnserieswhichhaveCMRefectshavebenthesubjectsofintens... INTRODUCTIONTheABO3oxideswithperovskitebasedstructureofMnserieswhichhaveCMRefectshavebenthesubjectsofintensiveresearcheffor... 展开更多
关键词 LaSrMnFeO compound MAGNETIC PROPERTIES colossal MAGNETORESISTANCE SOL gel technique
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Transport-magnetism Correlation and Colossal Magnetoresistance in Mixed-valent Manganites
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作者 李建青 袁松柳 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2005年第2期49-52,共4页
A phenomenological model based on phase separation between ferromagnetic metallic and paramagnetic insulating domains was applied to analyze the electrical transport and colossal magnetoresistance for mixed-valent man... A phenomenological model based on phase separation between ferromagnetic metallic and paramagnetic insulating domains was applied to analyze the electrical transport and colossal magnetoresistance for mixed-valent manganites of RE_(2/3)AE_(1/3)MnO_3. The results show that the model can yield results in agreement with experimental observations in these manganites. The present approach provides a simple picture to visualize the reason that the temperature dependence of resistance (with and without applied magnetic fields) in these compounds has the peculiar shape, without invoking any complicated concept. 展开更多
关键词 manganite perovskites colossal magnetoresistance magnetic transition
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Dielectric Properties of Colossal Permittivity Materials: An Update
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作者 Chafe Cheballah Zarel Valdez-Nava +4 位作者 Lionel Laudebat Thierry Lebey Pierre Bidan Sombel Diaham Sophie Guillemet-Fritsch 《Journal of Energy and Power Engineering》 2013年第4期726-732,共7页
During the last 10 years, a lot of interests have been devoted to the so-called CDC (colossal dielectric constant) materials. The first materials exhibiting this behavior were the perovskite-based ceramics on the CC... During the last 10 years, a lot of interests have been devoted to the so-called CDC (colossal dielectric constant) materials. The first materials exhibiting this behavior were the perovskite-based ceramics on the CCTO (CaCuaTi4012) composition. Relative dielectric permittivity can attain values up to (or even larger than) 105. Nevertheless, their dielectric losses are too high, the lower values ranging 10%, in a narrow frequency range, thus limiting their applications. The underlying physical mechanisms at the origin of the CDC are still under study. The analysis of broadband impedance spectroscopy measurements leads most of the authors to propose an interracial polarization mechanism (at the electrodes or at internal barriers), there is a limited number of complementary electrical characterization techniques, which, up to now, comfort the proposed interracial polarization mechanisms. In the present work, I-V and time-domain polarization are used to characterize these materials. One of the main results is the observation of a non-symmetrical response of these materials related to the direction of the polarization. These results are observed for both macroscopic level on bulk polycrystalline material and within individual grains of the same samples. These results do not fit current accepted models for polarization for CDC materials. 展开更多
关键词 colossal permittivity CaCu3Ti4Oi2 CCTO dielectric properties.
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塑晶材料及其压卡效应研究发展与展望
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作者 范晓燕 赵雪婷 欧志强 《材料导报》 EI CAS CSCD 北大核心 2024年第5期272-279,共8页
随着世界经济的快速发展,以及全球变暖导致的气候问题日益加重,制冷技术对现代社会的影响越来越深入。全氯氟烃(CFCs)和含氢氯氟烃(HCFCs)类氟利昂制冷剂在常规的气体压缩制冷技术中一直占据主要地位,但这一类制冷剂的使用会加剧全球的... 随着世界经济的快速发展,以及全球变暖导致的气候问题日益加重,制冷技术对现代社会的影响越来越深入。全氯氟烃(CFCs)和含氢氯氟烃(HCFCs)类氟利昂制冷剂在常规的气体压缩制冷技术中一直占据主要地位,但这一类制冷剂的使用会加剧全球的温室效应。为了实现全球碳中和,寻求高效环保的制冷方案成为科学家们的重点研究方向,而基于外场诱导的固态相变技术就提供了一种很有前景的方案,其中压卡效应备受关注。近年来,科学家们相继在一系列被称为塑晶的材料中发现了庞压卡效应,其熵变比传统的固态相变制冷材料高一个数量级。在此之后,科研界对塑晶材料压卡效应的研究逐渐增多,并不断探寻出新的具有优异性能的塑晶材料作为压卡制冷技术的工质。这极大地促进了压卡制冷技术的发展,为未来实现绿色环保的高效制冷技术提供了更多可能性。本文将简单解释塑晶压卡效应的物理机制,对C_(5)H_(12)O_(2)(NPG)、(NH_(2))C(CH_(2)OH)_(3)(TRIS)以及碳硼烷等几种典型的塑晶材料在压卡效应上的综合表现进行陈述和对比,并对塑晶压卡效应在新型固态制冷技术中的应用进行展望。 展开更多
关键词 固态相变 庞压卡效应 压卡效应制冷技术 塑晶材料
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Sr_(1-x)Er_(x)TiO_(3)陶瓷的巨介电性能研究
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作者 蒲永平 张贤 +2 位作者 张金波 宁亚婷 上阳超 《陕西科技大学学报》 北大核心 2023年第4期104-111,共8页
选用“两性”稀土Er^(3+)离子掺杂SrTiO_(3)陶瓷,采用传统固相法制备出了在空气下烧结的具有巨介电低损耗的Sr_(1-x)Er_(x)TiO_(3)陶瓷.结果表明,当x=0.012,该陶瓷显示出巨介电行为,在1 kHz下具有17 790的介电常数,在1 MHz下具有14 363... 选用“两性”稀土Er^(3+)离子掺杂SrTiO_(3)陶瓷,采用传统固相法制备出了在空气下烧结的具有巨介电低损耗的Sr_(1-x)Er_(x)TiO_(3)陶瓷.结果表明,当x=0.012,该陶瓷显示出巨介电行为,在1 kHz下具有17 790的介电常数,在1 MHz下具有14 363的介电常数,在1 kHz下具有0.02的介电损耗.在巨介电、低介电损耗的材料中,存在着“电子钉扎”现象,电子的局域极化使介电常数增大;而在此过程中,由于限制了电子的长程移动,从而降低了介质损耗. 展开更多
关键词 SrTiO_(3) 巨介电常数 低介电损耗 两性掺杂
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Colossal permittivity and ultralow dielectric loss in Nb-doped SrTiO_(3) ceramics
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作者 Jinghan Cai Junlei Qi +2 位作者 Yueyang Yang Xinyue Zhang Yuan-Hua Lin 《Journal of Advanced Ceramics》 SCIE EI CAS CSCD 2023年第12期2247-2256,共10页
Defect engineering has been applied to prepare materials with modifiable dielectric properties.SrTiNbxO3(x=0,0.003,0.006,0.009,0.012)ceramics were synthesized using the traditional solid-state reaction method and sint... Defect engineering has been applied to prepare materials with modifiable dielectric properties.SrTiNbxO3(x=0,0.003,0.006,0.009,0.012)ceramics were synthesized using the traditional solid-state reaction method and sintered in a reducing atmosphere.All samples show excellent dielectric properties with giant permittivity(>3.5×10^(4))and low dielectric loss(<0.01).SrTiNb0.003O3 ceramic exhibits a colossal permittivity of 4.6×10^(4)and an ultralow dielectric loss of 0.005(1 kHz,room temperature)as well as great temperature stability in the range of(−60)–160℃.The mechanism of the presented colossal permittivity(CP)properties is investigated by conducting X-ray photoelectron spectroscopy(XPS)and analyzing activation energies.The results indicate that the introduction of Nb5+and the reducing sintering atmosphere together generated the formation of Ti^(3+)and V_(O)^(**).These defects further form Ti-V_(O)^(**)-Ti'_(Ti)defect dipoles,contributing to the coexisting giant permittivity and low dielectric loss in Nb-doped SrTiO_(3)(STN)ceramics. 展开更多
关键词 SrTiO_(3) colossal permittivity(CP) ultralow dielectric loss defect dipoles
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La_(0.7-x)Dy_xSr_(0.3)MnO_3中的相分离和输运行为 被引量:8
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作者 蔡之让 刘宁 +2 位作者 童伟 徐素军 张裕恒 《光谱学与光谱分析》 SCIE EI CAS CSCD 北大核心 2004年第10期1188-1192,共5页
通过测量样品的M T曲线、M H曲线、ESR曲线、ρ T曲线和MR T曲线 ,研究了Dy掺杂 (0 0≤x≤ 0 30 )对La0 7Sr0 3 MnO3 磁电性质的影响。实验结果表明 :在TC 处所有样品都经历了顺磁到铁磁的转变 ;当T <TC 时 ,掺杂样品进入自旋团... 通过测量样品的M T曲线、M H曲线、ESR曲线、ρ T曲线和MR T曲线 ,研究了Dy掺杂 (0 0≤x≤ 0 30 )对La0 7Sr0 3 MnO3 磁电性质的影响。实验结果表明 :在TC 处所有样品都经历了顺磁到铁磁的转变 ;当T <TC 时 ,掺杂样品进入自旋团簇玻璃态 ,低温时显示出反铁磁性 ;x =0 2 0时 ,样品在TC 以上温区发生相分离 ; 展开更多
关键词 掺杂稀土锰氧化物 庞磁电阻效应 结构 磁性 相分离 输运行为
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稀土掺杂锰氧化物庞磁电阻效应 被引量:46
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作者 刘俊明 王克锋 《物理学进展》 CSCD 北大核心 2005年第1期82-130,共49页
 过去十多年来,具有庞磁电阻效应的稀土掺杂锰氧化物成为了凝聚态物理研究的重要领域。锰氧化物的载流子自旋极化率高,且在居里温度附近表现出很大的磁电阻效应,因此在自旋电子学中有潜在的应用前景。另一方面,锰氧化物是典型的强关联...  过去十多年来,具有庞磁电阻效应的稀土掺杂锰氧化物成为了凝聚态物理研究的重要领域。锰氧化物的载流子自旋极化率高,且在居里温度附近表现出很大的磁电阻效应,因此在自旋电子学中有潜在的应用前景。另一方面,锰氧化物是典型的强关联电子体系,它对目前有关强关联体系的认识提出了很大挑战。本文综述了锰氧化物的各种性质及其物理原因。全文首先概述了锰氧化物的庞磁电阻效应及其晶格和电子结构,简单介绍了其他一些庞磁电阻材料;随后综述了锰氧化物的电荷/轨道有序相及其输运性质;在第四部分简单介绍了锰氧化物中庞磁电阻效应的机制;最后讨论了锰氧化物的一些可能的应用,如低场磁电阻效应、磁隧道结、磁p_n结以及全钙钛矿的场效应管和自旋极化电子注入装置等。 展开更多
关键词 锰氧化物 庞磁电阻效应 自旋极化电子 凝聚态物理 输运性质 电子结构 稀土掺杂 居里温度 磁隧道结 自旋电子学
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(La_(1-x)RE_x)_(2/3)Sr_(1/3)MnO_3 (RE=Y, Sm, Eu, Tb; x=0.1~0.5)的晶体结构及磁性质研究 被引量:8
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作者 刘建 张炳哲 +1 位作者 张伟 丁铁柱 《中国稀土学报》 CAS CSCD 北大核心 2004年第6期765-768,共4页
采用空气中固相反应烧结法制备了一系列钙钛矿结构的(La1-xREx)2/3Sr1/3MnO3(RE=Y,Sm,Eu,Tb;x=0.1~0.5)稀土锰氧化物多晶样品。X射线衍射(XRD)分析表明掺杂RE部分替代La以后,样品的晶体结构为正交结构,空间群为Pbnm。在室温(300K)和液... 采用空气中固相反应烧结法制备了一系列钙钛矿结构的(La1-xREx)2/3Sr1/3MnO3(RE=Y,Sm,Eu,Tb;x=0.1~0.5)稀土锰氧化物多晶样品。X射线衍射(XRD)分析表明掺杂RE部分替代La以后,样品的晶体结构为正交结构,空间群为Pbnm。在室温(300K)和液氮温度(77K)下分别测试了样品的磁性质,发现磁性质的改变与RE的掺入量以及RE的离子半径有关。在掺Tb的样品中明显存在巨磁电阻效应,磁场为2T,温度为300和77K分别测得(La0.6Tb0.4)2/3Sr1/3MnO3和(La0.7Tb0.3)2/3Sr1/3MnO3的磁电阻(MR)为80%和85%。随着Tb掺杂量的增加,在不同的磁场下,样品电阻 温度关系曲线的峰均向高温方向移动。 展开更多
关键词 掺杂 巨磁电阻效应 稀土
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La_(0.7-x)Sm_xSr_(0.3)MnO_3中的晶格效应 被引量:9
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作者 蔡之让 刘宁 +2 位作者 童伟 徐素军 张裕恒 《稀有金属》 EI CAS CSCD 北大核心 2004年第5期847-851,共5页
研究了La0 .7-xSmxSr0 .3MnO3(x =0 .0 0 ,0 .10 ,0 .2 0 ,0 .3 0 )体系的红外光谱 ,拉曼光谱 ,M T曲线 ,ESR曲线 ,ρ T曲线和MR T曲线。实验结果表明 :随着Sm掺入量的增加 ,体系从长程铁磁有序向自旋团簇玻璃态、反铁磁态转变 ,样品的... 研究了La0 .7-xSmxSr0 .3MnO3(x =0 .0 0 ,0 .10 ,0 .2 0 ,0 .3 0 )体系的红外光谱 ,拉曼光谱 ,M T曲线 ,ESR曲线 ,ρ T曲线和MR T曲线。实验结果表明 :随着Sm掺入量的增加 ,体系从长程铁磁有序向自旋团簇玻璃态、反铁磁态转变 ,样品的居里温度下降 ,金属 绝缘体相变温度逐渐降低 ,对应的峰值电阻渐渐增大 ,磁电阻迅速增加 ,样品物理量发生的变化可以用晶格效应来解释。 展开更多
关键词 凝聚态物理 晶格效应 巨磁电阻效应 稀土
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La-Gd-Ca-Mn-O的磁性、电性和磁电阻效应 被引量:7
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作者 刘宜华 岳龙强 +6 位作者 徐丽 黄佶 季刚 王成建 张汝贞 胡季帆 梅良膜 《材料科学与工程》 CSCD 北大核心 2001年第1期17-20,5,共5页
在La0 67Ca0 33 MnO3 中进行了掺Gd研究 ,结果发现 ,经 140 0℃烧结的样品 ,获得了最佳的磁电阻效应。随掺Gd量增加 ,材料的相变温度逐渐下降 ,对应的峰值电阻率大幅度增加 ,居里温度逐渐下降 ,磁电阻比明显提高。掺入 11%的Gd后 ,可... 在La0 67Ca0 33 MnO3 中进行了掺Gd研究 ,结果发现 ,经 140 0℃烧结的样品 ,获得了最佳的磁电阻效应。随掺Gd量增加 ,材料的相变温度逐渐下降 ,对应的峰值电阻率大幅度增加 ,居里温度逐渐下降 ,磁电阻比明显提高。掺入 11%的Gd后 ,可以使磁电阻比提高一个数量级。这些变化可以用晶格效应来解释。 展开更多
关键词 钙钛矿结构 稀土掺杂 锰氧化物 超大磁电阻 磁性 电性 磁电阻效应
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La_(0.67)Ba_(0.33)MnO_3中Ag的掺杂效应 被引量:10
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作者 原晓波 刘宜华 +2 位作者 黄宝歆 王成建 梅良模 《功能材料》 EI CAS CSCD 北大核心 2005年第1期32-34,共3页
在溶胶-凝胶法制备的La0.67 Ba0.33MnO3(LBMO)微粉中掺入Ag2O粉,制成一系列(LBMO)/(Ag2O)x/2(x=0~O.35,为摩尔比)掺杂材料,实验结果发现Ag掺杂可明显降低材料的电阻率.当掺Ag量为x=O.25时,样品的电阻率达到最低值.同时在居里点附近,样... 在溶胶-凝胶法制备的La0.67 Ba0.33MnO3(LBMO)微粉中掺入Ag2O粉,制成一系列(LBMO)/(Ag2O)x/2(x=0~O.35,为摩尔比)掺杂材料,实验结果发现Ag掺杂可明显降低材料的电阻率.当掺Ag量为x=O.25时,样品的电阻率达到最低值.同时在居里点附近,样品的峰值磁电阻得到显著增强.微量的Ag掺杂有助于提高样品的自旋相关隧穿磁电阻,使低场磁电阻得到显著增强. 展开更多
关键词 庞磁电阻效应 低场磁电阻 颗粒体系 两相复合结构 导电陶瓷
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非正分钙钛矿锰氧化物(La_(0.8)Sr_(0.2))_(1-x)MnO_3的电磁特性 被引量:8
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作者 余江应 胡秀坤 +2 位作者 夏洪旭 崔旭高 张世远 《功能材料》 EI CAS CSCD 北大核心 2004年第3期283-285,共3页
 报道了A位缺位的钙钛矿锰氧化物(La0.8Sr0.2)1-xMnO3(0≤x≤0.30)多晶样品的相结构、磁性和磁电阻效应。实验表明,当x≥0.20时,化合物主要由磁性钙钛矿相和非磁性Mn3O4相所组成。它们的电阻率随温度的变化曲线均具有双峰特征,高温侧...  报道了A位缺位的钙钛矿锰氧化物(La0.8Sr0.2)1-xMnO3(0≤x≤0.30)多晶样品的相结构、磁性和磁电阻效应。实验表明,当x≥0.20时,化合物主要由磁性钙钛矿相和非磁性Mn3O4相所组成。它们的电阻率随温度的变化曲线均具有双峰特征,高温侧的电阻率峰出现在钙钛矿相的居里温度附近,低温侧的电阻率宽峰则是金属导电性的钙钛矿晶粒和高电阻率的半导体或绝缘体导电性的晶界或相界共同作用的结果。样品的零场电阻率ρo随着A位缺位量x的增大而增大。适当改变x值,可以改善磁电阻比的温度稳定性。当x=0.30时,化合物磁电阻比MR在一个相对宽的温度范围内(175~328K)基本上保持不变,即MR=(9.1±0.5)%。 展开更多
关键词 钙钛矿锰化合物 磁电阻比 A位缺位 庞磁电阻(CMR)
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LaNaMnO纳米颗粒的磁卡效应 被引量:11
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作者 陈伟 钟伟 +3 位作者 侯登录 朱明刚 潘成福 都有为 《材料研究学报》 EI CAS CSCD 北大核心 1999年第5期552-554,共3页
用溶胶—凝胶法制备了La1- xNaxMnOz多晶纳米颗粒, 用结构分析、程序升温还原(TPR)及磁性测量等方法研究了样品的结构和磁卡效应. 结果表明,样品的居里温度Tc 与Mn—O键长有密切的联系.这些材料在低磁场下在... 用溶胶—凝胶法制备了La1- xNaxMnOz多晶纳米颗粒, 用结构分析、程序升温还原(TPR)及磁性测量等方法研究了样品的结构和磁卡效应. 结果表明,样品的居里温度Tc 与Mn—O键长有密切的联系.这些材料在低磁场下在室温附近较大的温度范围内具有相当大的磁熵变,是较为理想的室温磁致冷工作物质. 展开更多
关键词 锰钙钛矿 巨磁阻效应 磁卡效应 磁熵变 纳米颗粒
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