On Numerical Modelling of Industrial Powder Compaction Processes for Large Deformation of Endochronic Plasticity at Finite Strains

Compaction processes are one the most important par ts of powder forming technology. The main applications are focused on pieces for a utomotive, aeronautic, electric and electronic industries. The main goals of the compaction processes are to obtain a compact with the geometrical requirements, without cracks, and with a uniform distribution of density. Design of such proc esses consist, essentially, in determine the sequence and relative displacements of die and punches in order to achieve such goals. A.B. Khoei presented a gener al framework for the finite element simulation of powder forming processes based on the following aspects; a large displacement formulation, centred on a total and updated Lagrangian formulation; an adaptive finite element strategy based on error estimates and automatic remeshing techniques; a cap model based on a hard ening rule in modelling of the highly non-linear behaviour of material; and the use of an efficient contact algorithm in the context of an interface element fo rmulation. In these references, the non-linear behaviour of powder was adequately desc ribed by the cap plasticity model. However, it suffers from a serious deficiency when the stress-point reaches a yield surface. In the flow theory of plasticit y, the transition from an elastic state to an elasto-plastic state appears more or less abruptly. For powder material it is very difficult to define the locati on of yield surface, because there is no distinct transition from elastic to ela stic-plastic behaviour. Results of experimental test on some hard met al powder show that the plastic effects were begun immediately upon loading. In such mater ials the domain of the yield surface would collapse to a point, so making the di rection of plastic increment indeterminate, because all directions are normal to a point. Thus, the classical plasticity theory cannot deal with such materials and an advanced constitutive theory is necessary. In the present paper, the constitutive equations of powder materials will be discussed via an endochronic theory of plasticity. This theory provides a unifi ed point of view to describe the elastic-plastic behaviour of material since it places no requirement for a yield surface and a ’loading function’ to disting uish between loading an unloading. Endochronic theory of plasticity has been app lied to a number of metallic materials, concrete and sand, but to the knowledge of authors, no numerical scheme of the model has been applied to powder material . In the present paper, a new approach is developed based on an endochronic rate independent, density-dependent plasticity model for describing the isothermal deformation behavior of metal powder at low homologous temperature. Although the concept of yield surface has not been explicitly assumed in endochronic theory, it is shown that the cone-cap plasticity yield surface (Fig.1), which is the m ost commonly used plasticity models for describing the behavior of powder materi al can be easily derived as a special case of the proposed endochronic theory. Fig.1 Trace of cone-cap yield function on the meridian pl ane for different relative density As large deformation is observed in powder compaction process, a hypoelastic-pl astic formulation is developed in the context of finite deformation plasticity. Constitutive equations are stated in unrotated frame of reference that greatly s implifies endochronic constitutive relation in finite plasticity. Constitutive e quations of the endochronic theory and their numerical integration are establish ed and procedures for determining material parameters of the model are demonstra ted. Finally, the numerical schemes are examined for efficiency in the model ling of a tip shaped component, as shown in Fig.2. Fig.2 A shaped tip component. a) Geometry, boundary conditio n and finite element mesh; b) density distribution at final stage of

BSIM Model Research and Recent Progress

The continued development of CMOS technology and the emergence of new applications demand continued improvement and enhancement of compact models. This paper outlines the recent work of the BSIM project at the University of California, Berkeley,including BSIM5 research, BSIM4 enhancements, and BSIMSOI development. BSIM5 addresses the needs of nano-CMOS technology and RF high-speed CMOS circuit simulation. BSIM4 is a mature industrial standard MOSFET model with several improvements to meet the technology requirements. BSIMSOI is developed into a generic model framework for PD and FD SOI technology. An operation mode choice,via the calculation of the body potential △Vbi and body current/charge,helps circuit designers in the trend of the coexistence of PD and FD devices.

Clastic compaction unit classification based on clay content and integrated compaction recovery using well and seismic data

Compaction correction is a key part of paleogeomorphic recovery methods. Yet, the influence of lithology on the porosity evolution is not usually taken into account. Present methods merely classify the lithologies as sandstone and mudstone to undertake separate porositydepth compaction modeling. However, using just two lithologies is an oversimplification that cannot represent the compaction history. In such schemes, the precision of the compaction recovery is inadequate. To improve the precision of compaction recovery, a depth compaction model has been proposed that involves both porosity and clay content. A clastic lithological compaction unit classification method, based on clay content, has been designed to identify lithological boundaries and establish sets of compaction units. Also, on the basis of the clastic compaction unit classification, two methods of compaction recovery that integrate well and seismic data are employed to extrapolate well-based compaction information outward along seismic lines and recover the paleo-topography of the clastic strata in the region. The examples presented here show that a better understanding of paleo-geomorphology can be gained by applying the proposed compaction recovery technology.

Finite element modeling of consolidation of composite laminates

Advanced fiber reinforced polymer composites have been increasingly applied to various structural components. One of the important processes to fabricate high performance laminated composites is an autoclave assisted prepreg lay-up. Since the quality of laminated composites is largely affected by the cure cycle, selection of an appropriate cure cycle for each application is important and must be optimized. Thus, some fundamental model of the consolidation and cure processes is necessary for selecting suitable parameters for a specific application. This article is concerned with the ＂flow-compaction＂ model during the autoclave processing of composite materials. By using a weighted residual method, two-dimensional finite element formulation for the consolidation process of thick thermosetting composites is presented and the corresponding finite element code is developed. Numerical examples, including comparison of the present numerical results with one-dimensional and twodimensional analytical solutions, are given to illustrate the accuracy and effectiveness of the proposed finite element formulation. In addition, a consolidation simulation of AS4/3501-6 graphite/epoxy laminate is carded out and compared with the experimental results available in the literature.

Parameter Extraction for 2-π Equivalent Circuit Model of RF CMOS Spiral Inductors

A novel parameter extraction method with rational functions is presented for the 2-πequivalent circuit model of RF CMOS spiral inductors. The final S-parameters simulated by the circuit model closely match experimental data. The extraction strategy is straightforward and can be easily implemented as a CAD tool to model spiral inductors. The resulting circuit models will be very useful for RF circuit designers.

Gate-Capacitance-Shift Approach and Compact Modeling for Quantum Mechanical Effects in Poly-Gates

A new approach,gate-capacitance-shift (GCS) approach,is described for compact modeling.This approach is piecewise for various physical effects and comprises the gate-bias-dependent nature of corrections in the nanoscale regime.Additionally,an approximate-analytical solution to the quantum mechanical (QM) effects in polysilicon (poly)-gates is obtained based on the density gradient model.It is then combined with the GCS approach to develop a compact model for these effects.The model results tally well with numerical simulation.Both the model results and simulation results indicate that the QM effects in poly-gates of nanoscale MOSFETs are non-negligible and have an opposite influence on the device characteristics as the poly-depletion (PD) effects do.

Compact Threshold Voltage Model for FinFETs

A 2D analytical electrostatics analysis for the cross-section of a FinFET (or tri-gate MOSFET) is performed to calculate the threshold voltage.The analysis results in a modified gate capacitance with a coefficient H introduced to model the effect of tri-gates and its asymptotic behavior in 2D is that for double-gate MOSFET.The potential profile obtained analytically at the cross-section agrees well with numerical simulations.A compact threshold voltage model for FinFET,comprising quantum mechanical effects,is then proposed.It is concluded that both gate capacitance and threshold voltage will increase with a decreased height,or a decreased gate-oxide thickness of the top gate,which is a trend in FinFET design.

New Method of Total Ionizing Dose Compact Modeling in Partially Depleted Silicon-on-Insulator MOSFETs

On the basis of a detailed discussion of the development of total ionizing dose （TID） effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide- semiconductor field effect transistors is developed. An exponential approximation is proposed to simplify the trap charge calculation. Irradiation experiments with 60Co gamma rays for IO and core devices are performed to validate the simulation results. An excellent agreement of measurement with the simulation results is observed.

Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

A compact model for the integrated inversion charge density Qi in double-gate （DG-） MOSFETs is developed. For nanoscale applications,quantum confinement of the inversion carriers must be taken into account. Based on the previous work of Ge, we establish an expression for the surface potential with respect to Qi, and form an implicit equation, from which Qi can be solved. Results predicted by our model are compared to published data as well as results from Schred,a popular 1D numerical solver that solves the Poisson＇s and Schr6dinger equa- tions self-consistently. Good agreement is obtained for a wide range of silicon layer thickness,confirming the supe- riority of this model over previous work in this field.

A review for compact model of graphene field-effect transistors

Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors （FETs） have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modem IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to the charge sheet model, drift-diffusion model, Boltzmann equation, density of states （DOS）, and surface-potential-based compact model. Finally, an outlook of this field is briefly discussed.

Performance and analytical modelling of halo-doped surrounding gate MOSFETs

Halo structure is added to sub-100 nm surrounding-gate metal-oxide-semiconductor fieldeffect-transistors （MOS- FETs） to suppress short channel effect. This paper develops the analytical surface potential and threshold voltage models based on the solution of Poisson＇s equation in fully depleted condition for symmetric halo-doped cylindrical surrounding gate MOSFETs. The performance of the halo-doped device is studied and the validity of the analytical models is verified by comparing the analytical results with the simulated data by three dimensional numerical device simulator Davinci. It shows that the halo doping profile exhibits better performance in suppressing threshold voltage roll-off and drain-induced barrier lowering, and increasing carrier transport efficiency. The derived analytical models are in good agreement with Davinci.

Analysis of characteristic functions for equivalent circuit model in monolithic transformer

A model of monolithic transformers is presented, which is analyzed with characteristic functions. A closed- form analytical approach to extract all the model parameters for the equivalent circuit of Si-based on-chip transformers is proposed. A novel de-coupling technique is first developed to reduce the complexity in the Y parameters for the transformer, and the model parameters can then be extracted analytically by a set of characteristic functions. Simulation based on the extracted parameters has been carried out for transformers with different structures, and good accuracy is obtained compared to a 3-demensional full-wave numerical electro- magnetic field solver. The presented approach will be very useful to provide a scalable and wide-band compact circuit model for Si-based RF transformers.

BSIM-CMG Compact Model for IC CAD: from FinFET to Gate-All-Around FET Technology

We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate(CMG)device.This is an industry standard model which has been used extensively for FinFETs IC design and simulation,and has now been extended to accurately model gate-allaround FET(GAAFET).We present the core framework of BSIM-CMG and discuss the latest updates that capture various physical phenomena originating from the quantum confinement of electrons by the small cross section of the GAAFET channel.Special attention is paid to providing suitable model parameters that can be adjusted using software tools to match the model with manufactured transistors very accurately.Furthermore,the model’s speed allows the use of Monte Carlo circuit simulation to account for random device variations encountered in manufacturing.This model is the industry standard compact model for GAAFETs and will help bridge the wide divide between GAA IC manufacturing and design,starting at 3nm/2nm technologies.

An improvement to computational efficiency of the drain current model for double-gate MOSFET

As a connection between the process and the circuit design, the device model is greatly desired for emerging devices, such as the double-gate MOSFET. Time efficiency is one of the most important requirements for device modeling. In this paper, an improvement to the computational efficiency of the drain current model for double-gate MOSFETs is extended, and different calculation methods are compared and discussed. The results show that the calculation speed of the improved model is substantially enhanced. A two-dimensional device simulation is performed to verify the improved model. Furthermore, the model is implemented into the HSPICE circuit simulator in Verilog-A for practical application.

A review of compact modeling for phase change memory

Phase change memory(PCM)attracts wide attention for the memory-centric computing and neuromorphic comput-ing.For circuit and system designs,PCM compact models are mandatory and their status are reviewed in this work.Macro mod-els and physics-based models have been proposed in different stages of the PCM technology developments.Compact model-ing of PCM is indeed more complex than the transistor modeling due to their multi-physics nature including electrical,thermal and phase transition dynamics as well as their interactions.Realizations of the PCM operations including threshold switching,set and reset programming in these models are diverse,which also differs from the perspective of circuit simulations.For the purpose of efficient and reliable designs of the PCM technology,open issues and challenges of the compact modeling are also discussed.

A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.

Impacts of Parameter Scaling for Low-Power Applications Using CNTFET （Carbon Nanotube Field Effect Transistor） Models： A Comparative Assessment

This paper provides an extension to the earlier work wherein a comparison between different models that had studied the effects of several parameters scaling on the performance of carbon nano tube field-effect transistors was presented. The evaluation for the studied models, with regard to the scaling effects, was to determine those which best reflect the very essence of carbon nano-tube technologies. Whereas the models subject this comparison （Fettoy, Roy, Stanford, and Southampton） were affected to varying degrees due to such parametric variations, the Stanford model was shown as still being valid for a wide range of chiralities and diameter sizes; a model that is also applicable for circuit simulations. In this paper, we present a comparative assessment of the various models subject to the study with regard to the effect of incorporating multiple carbon nanotubes in the channel region. We also assess the effect of oxide thickness on transistor performance in terms of the supply voltage threshold effects. Results leveraging our findings in this ongoing research endeavor reveal that many research efforts were not efficient to high degree due to high delay and not valid for circuit simulations.

Overpressure origin and its effects on petroleum accumulation in the conglomerate oil province in Mahu Sag, Junggar Basin, NW China

The origin of overpressure and its effect on petroleum accumulation in the large Permian/Triassic conglomerate oil province in the Mahu Sag,Junggar Basin have been investigated based on comprehensive analysis of log curve combinations,loading-unloading curves,sonic velocity-density cross-plot,and porosity comparison data.The study results show that there are two kinds of normal compaction models in the study area,namely,two-stage linear model and exponent model;overpressure in the large conglomerate reservoirs including Lower Triassic Baikouquan Formation and Permian Upper and Lower Wu’erhe Formations is the result of pressure transfer,and the source of overpressure is the overpressure caused by hydrocarbon generation of Permian Fengcheng Formation major source rock.The petroleum migrated through faults under the driving of hydrocarbon generation overpressure into the reservoirs to accumulate,forming the Permian and Triassic overpressure oil and gas reservoirs.The occurrence and distribution of overpressure are controlled by the source rock maturity and strike-slip faults connecting the source rock and conglomerate reservoirs formed from Indosinian Movement to Himalayan Movement.As overpressure is the driving force for petroleum migration in the large Mahu oil province,the formation and distribution of petroleum reservoirs above the source rock in this area may have a close relationship with the occurrence of overpressure.

Physics-constrained graph modeling for building thermal dynamics

In this paper,we propose a graph model embedded with compact physical equations for modeling the thermal dynamics of buildings.The principles of heat flow across various components in the building,such as walls and doors,fit the message-passing strategy used by Graph Neural networks(GNNs).The proposed method is to represent the multi-zone building as a graph,in which only zones are considered as nodes,and any heat flow between zones is modeled as an edge based on prior knowledge of the building structure.Furthermore,the thermal dynamics of these components are described by compact models in the graph.GNNs are further employed to train model parameters from collected data.During model training,our proposed method enforces physical constraints(e.g.,zone sizes and connections)on model parameters and propagates the penalty in the loss function of GNN.Such constraints are essential to ensure model robustness and interpretability.We evaluate the effectiveness of the proposed modeling approach on a realistic dataset with multiple zones.The results demonstrate a satisfactory accuracy in the prediction of multi-zone temperature.Moreover,we illustrate that the new model can reliably learn hidden physical parameters with incomplete data.

Continuous analyticⅠ-Ⅴmodel for GS DG MOSFETs including hot-carrier degradation effects

We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate （GS DG） MOSFET device. Our analysis is carried out by using an accurate continuous current-voltage （I-V） model, derived based on both Poisson＇s and continuity equations without the need of charge-sheet approxi- mation. The developed model offers the possibility to describe the entire range of different regions （subthreshold, linear and saturation） through a unique continuous expression. Therefore, the proposed approach can bring consid- erable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.