A novel simple dose-compensation method is developed for proximity effect correction in electron-beam lithography.The sizes of exposed patterns depend on dose factors while other exposure parameters（including acceler...A novel simple dose-compensation method is developed for proximity effect correction in electron-beam lithography.The sizes of exposed patterns depend on dose factors while other exposure parameters（including accelerate voltage,resist thickness,exposing step size,substrate material,and so on） remain constant.This method is based on two reasonable assumptions in the evaluation of the compensated dose factor：one is that the relation between dose factors and circle-diameters is linear in the range under consideration;the other is that the compensated dose factor is only affected by the nearest neighbors for simplicity.Four-layer-hexagon photonic crystal structures were fabricated as test patterns to demonstrate this method.Compared to the uncorrected structures,the homogeneity of the corrected hole-size in photonic crystal structures was clearly improved.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.60506017,60776059)the National High Technology Research and Development Program of China(No.2007AA03Z303).
文摘A novel simple dose-compensation method is developed for proximity effect correction in electron-beam lithography.The sizes of exposed patterns depend on dose factors while other exposure parameters（including accelerate voltage,resist thickness,exposing step size,substrate material,and so on） remain constant.This method is based on two reasonable assumptions in the evaluation of the compensated dose factor：one is that the relation between dose factors and circle-diameters is linear in the range under consideration;the other is that the compensated dose factor is only affected by the nearest neighbors for simplicity.Four-layer-hexagon photonic crystal structures were fabricated as test patterns to demonstrate this method.Compared to the uncorrected structures,the homogeneity of the corrected hole-size in photonic crystal structures was clearly improved.
