Voltage sag compensation strategy for unified power quality conditioner with simultaneous reactive power injection

Unified power quality conditioner(UPQC)holds the capability of solving power quality problems,especially shows good performance in the voltage sag compensation. In this paper, a compensation strategy based on simultaneous reactive power injection for UPQC(namely UPQC-SRI) is proposed to address the issue of voltage sag. The proposed UPQC-SRI determines the injection angle of compensation voltage with consideration of optimal configuration of UPQC current-carrying.Moreover, the compensation strategy also considers the current-carrying limit of UPQC, and then the zero active power injection region of UPQC-SRI(also called UPQCSRI region) is obtained. Under the conditions which exceed the UPQC-SRI region, the limit value of shunt current is determined by this proposed strategy. Finally, the proposed strategy and the corresponding algorithm are verified under the PSCAD/EMTDC platform. The result indicates the proposed UPQC-SRI strategy in this paper can provide more persistent voltage sag compensation than the previous strategies for the sensitive load.

Temperature characteristics research of SOI pressure sensor based on asymmetric base region transistor

Based on the asymmetric base region transistor, a pressure sensor with temperature compensation circuit is proposed in this paper. The pressure sensitive structure of the proposed sensor is constructed by a C-type silicon cup and a Wheatstone bridge with four piezoresistors（R_1, R_2, R_3 and R_4/locating on the edge of a square silicon membrane. The chip was designed and fabricated on a silicon on insulator（SOI） wafer by micro electromechanical system（MEMS） technology and bipolar transistor process. When the supply voltage is 5.0 V, the corresponding temperature coefficient of the sensitivity（TCS） for the sensor before and after temperature compensation are -1862 and -1067 ppm/℃, respectively. Through varying the ratio of the base region resistances r_1 and r_2, the TCS for the sensor with the compensation circuit is -127 ppm/℃. It is possible to use this compensation circuit to improve the temperature characteristics of the pressure sensor.